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1. 发明授权

US07129176B2 Optical device having micro lens array and method for manufacturing the same 有权
标题翻译：具有微透镜阵列的光学装置及其制造方法
公开(公告)号：US07129176B2
公开(公告)日：2006-10-31
申请号：US10759025
申请日：2004-01-20
申请人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
发明人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
IPC分类号： H01L21/027
CPC分类号： H01L27/14625 , G02B6/4249 , H01L27/14627 , H01L27/14685
摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
摘要翻译：光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。光学部件与基板一体化。该光学部件具有高设计自由度。

2. 发明授权

US07107846B2 Capacitance type acceleration sensor 有权
标题翻译：电容式加速度传感器
公开(公告)号：US07107846B2
公开(公告)日：2006-09-19
申请号：US11265281
申请日：2005-11-03
申请人： Kazuhiko Kano , Tetsuo Yoshioka , Takao Iwaki , Yukihiro Takeuchi
发明人： Kazuhiko Kano , Tetsuo Yoshioka , Takao Iwaki , Yukihiro Takeuchi
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01P2015/0814 , G01P2015/0817
摘要： A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.
摘要翻译：电容型加速度传感器包括半导体基板，通过弹簧部分支撑在基板上的重量部分，与重物部分一体化的可动电极以及与该基板悬臂连接的固定电极。根据加速度，可移动电极与可动电极的相对表面一起移动。可动电极的相对表面面对固定电极的相对表面，以提供电容器。电容器的电容根据可动电极的位移而变化，使得外部电路作为电容变化来检测加速度。可移动和固定电极的每个相对表面具有用于增加电容变化的凹凸部分。

3. 发明授权

US07004026B2 Capacitance type acceleration sensor 有权
公开(公告)号：US07004026B2
公开(公告)日：2006-02-28
申请号：US10703461
申请日：2003-11-10
申请人： Kazuhiko Kano , Tetsuo Yoshioka , Takao Iwaki , Yukihiro Takeuchi
发明人： Kazuhiko Kano , Tetsuo Yoshioka , Takao Iwaki , Yukihiro Takeuchi
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01P2015/0814 , G01P2015/0817
摘要： A capacitance type acceleration sensor includes a semiconductor substrate, a weight portion supported with the substrate through a spring portion, a movable electrode integrated with the weight portion, and a fixed electrode cantilevered with the substrate. The movable electrode is displaced along with a facing surface of the movable electrode in accordance with acceleration. The facing surface of the movable electrode faces a facing surface of the fixed electrode so as to provide a capacitor. The capacitance of the capacitor changes in accordance with a displacement of the movable electrode so that an outer circuit detects the acceleration as a capacitance change. Each facing surface of the movable and fixed electrodes has a concavity and convexity portion for increasing the capacitance change.

4. 发明授权

US06906394B2 Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
标题翻译：能够感测动态量的半导体器件的制造方法
公开(公告)号：US06906394B2
公开(公告)日：2005-06-14
申请号：US10448277
申请日：2003-05-30
申请人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
发明人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
IPC分类号： G01P15/125 , B81B3/00 , H01L21/302 , H01L21/3065 , H01L21/762 , H01L29/84 , H01L27/01
CPC分类号： B81C1/00936 , B81B2203/0136 , B81C1/0019 , B81C1/00531 , B81C2201/0132 , G01P2015/0814 , H01L21/76232 , H01L21/76264 , H01L21/76283
摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.
摘要翻译：提供一种制造半导体器件的方法。使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。去除这样的部件，形成可动部分。例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。拆卸电荷可防止可动部分粘附到其周围部分。

5. 发明授权

US5587343A Semiconductor sensor method 失效
标题翻译：半导体传感器方法
公开(公告)号：US5587343A
公开(公告)日：1996-12-24
申请号：US401044
申请日：1995-03-08
申请人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
发明人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
IPC分类号： G01L1/18 , G01L1/22 , G01P15/08 , G01P15/12 , H01L21/28 , H01L29/51 , H01L29/84 , H01L21/00 , B44C1/22
CPC分类号： H01L21/28238 , G01P15/0802 , G01P15/124 , H01L29/51 , H01L29/84 , G01P2015/0828
摘要： A method for fabricating a semiconductor sensor wherein deflection of a movable member is disclosed. A silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the silicon oxide film by means of a low-pressured chemical vapor deposition process. At this time, silane is caused to flow into an oven, and the supply of silane is stopped when a layer of polycrystalline silicon has been deposited on the silicon substrate, and a first polycrystalline silicon layer is formed. By means of stopping the supply of silane, a silicon oxide layer of a thickness of several angstroms to several tens of angstroms is formed on the first polycrystalline silicon layer by atmosphere O.sub.2. A second polycrystalline silicon layer of a thickness of 1 .mu.m is formed on the silicon oxide layer by means of causing silane to flow into the oven. Patterning by dry etching or the like through a photo-lithographic process is performed to form a movable member. The silicon oxide film below the movable member is then etched.
摘要翻译：一种制造半导体传感器的方法，其中公开了可移动部件的偏转。在硅基板上形成氧化硅膜，通过低压化学气相沉积工艺在氧化硅膜上形成由多晶硅构成的可动部件。此时，使硅烷流入烘箱，当在硅衬底上沉积多晶硅层时，停止供给硅烷，形成第一多晶硅层。通过停止硅烷的供给，通过气氛O2在第一多晶硅层上形成厚度为几埃至数十埃的氧化硅层。通过使硅烷流入烘箱中，在氧化硅层上形成厚度为1μm的第二多晶硅层。进行通过光刻法的干蚀刻等的图案化，形成可动部件。然后蚀刻可动件下方的氧化硅膜。

6. 发明申请

US20070019406A1 OPTICAL DEVICE HAVING MICRO LENS ARRAY 有权
标题翻译：具有微透镜阵列的光学器件
公开(公告)号：US20070019406A1
公开(公告)日：2007-01-25
申请号：US11528611
申请日：2006-09-28
申请人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
发明人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
IPC分类号： F21V7/00
CPC分类号： H01L27/14625 , G02B6/4249 , H01L27/14627 , H01L27/14685
摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
摘要翻译：光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。光学部件与基板一体化。该光学部件具有高设计自由度。

7. 发明授权

US5627397A Semiconductor acceleration sensor with source and drain regions 失效
标题翻译：具有源极和漏极区域的半导体加速度传感器
公开(公告)号：US5627397A
公开(公告)日：1997-05-06
申请号：US402949
申请日：1995-03-13
申请人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama , Kenichi Nara
发明人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama , Kenichi Nara
IPC分类号： G01P1/00 , G01P15/12 , H01L29/84 , H01L29/82
CPC分类号： G01P15/124 , G01P1/006 , Y10S73/01
摘要： A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.
摘要翻译：根据本发明的半导体加速度传感器通过检测形成在半导体衬底上的固定电极之间的电流的增加或减少来执行加速度检测，该半导体衬底以可移动状态支撑在作为栅电极的半导体衬底上的可移动状态。在该检测中使用两个晶体管结构。一个晶体管结构中的固定电极之间的电流在可移动部分受到加速并被移位时增加。此时，另一晶体管结构中的固定电极之间的电流降低。这两个晶体管结构靠近地设置。通过这种接近的配置，两个晶体管的特性波动减小，并且通过差分类型的加速度检测，可以有利地消除两个晶体管的温度特性。

8. 发明授权

US07758979B2 Piezoelectric thin film, piezoelectric material, and fabrication method of piezoelectric thin film and piezoelectric material, and piezoelectric resonator, actuator element, and physical sensor using piezoelectric thin film 有权
标题翻译：压电薄膜，压电材料以及压电薄膜和压电材料的制造方法以及压电谐振器，致动器元件和使用压电薄膜的物理传感器
公开(公告)号：US07758979B2
公开(公告)日：2010-07-20
申请号：US12155015
申请日：2008-05-29
申请人： Morito Akiyama , Toshihiro Kamohara , Naohiro Ueno , Kazuhiko Kano , Akihiko Teshigahara , Yukihiro Takeuchi , Nobuaki Kawahara
发明人： Morito Akiyama , Toshihiro Kamohara , Naohiro Ueno , Kazuhiko Kano , Akihiko Teshigahara , Yukihiro Takeuchi , Nobuaki Kawahara
IPC分类号： B32B9/00
CPC分类号： B81B3/0021 , B81B2201/0271 , B81B2201/032 , H01L41/0815 , H01L41/094 , H01L41/1136 , H01L41/187 , H01L41/316 , H03H9/02015 , H03H9/02574 , H03H9/173
摘要： A piezoelectric thin film of the present invention includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 atom % to 50 atom % on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom %. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has.
摘要翻译：本发明的压电薄膜包括含有钪的氮化铝薄膜。假设钪原子的总数和铝原子数为100原子％，则氮化铝薄膜中的钪的含有比例为0.5原子％〜50原子％。根据该结构，本发明的压电薄膜能够在保持氮化铝薄膜的弹性波传播速度，Q值和频率 - 温度系数的特性的同时提高压电响应。

9. 发明申请

US20080296529A1 Piezoelectric thin film, piezoelectric material, and fabrication method of piezoelectric thin film and piezoelectric material, and piezoelectric resonator, actuator element, and physical sensor using piezoelectric thin film 有权
标题翻译：压电薄膜，压电材料以及压电薄膜和压电材料的制造方法以及压电谐振器，致动器元件和使用压电薄膜的物理传感器
公开(公告)号：US20080296529A1
公开(公告)日：2008-12-04
申请号：US12155015
申请日：2008-05-29
申请人： Morito Akiyama , Toshihiro Kamohara , Naohiro Ueno , Kazuhiko Kano , Akihiko Teshigahara , Yukihiro Takeuchi , Nobuaki Kawahara
发明人： Morito Akiyama , Toshihiro Kamohara , Naohiro Ueno , Kazuhiko Kano , Akihiko Teshigahara , Yukihiro Takeuchi , Nobuaki Kawahara
IPC分类号： H01L41/187 , B05D5/12
CPC分类号： B81B3/0021 , B81B2201/0271 , B81B2201/032 , H01L41/0815 , H01L41/094 , H01L41/1136 , H01L41/187 , H01L41/316 , H03H9/02015 , H03H9/02574 , H03H9/173
摘要： A piezoelectric thin film of the present invention includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 atom % to 50 atom % on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom %. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has.
摘要翻译：本发明的压电薄膜包括含有钪的氮化铝薄膜。假设钪原子的总数和铝原子数为100原子％，则氮化铝薄膜中的钪的含有比例为0.5原子％〜50原子％。根据该结构，本发明的压电薄膜能够在保持氮化铝薄膜的弹性波传播速度，Q值和频率 - 温度系数的特性的同时提高压电响应。

10. 发明授权

US07201053B2 Capacitance type physical quantity sensor 有权
标题翻译：电容式物理量传感器
公开(公告)号：US07201053B2
公开(公告)日：2007-04-10
申请号：US10834183
申请日：2004-04-29
申请人： Tetsuo Yoshioka , Akihiko Teshigahara , Junji Ohara , Yukihiro Takeuchi , Toshimasa Yamamoto , Kazuhiko Kano
发明人： Tetsuo Yoshioka , Akihiko Teshigahara , Junji Ohara , Yukihiro Takeuchi , Toshimasa Yamamoto , Kazuhiko Kano
IPC分类号： G01P15/125 , G01P9/04
CPC分类号： G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.
摘要翻译：电容式物理量传感器检测物理量。传感器包括可移动部分，其包括可动电极和包括固定电极的固定部分。固定电极包括面向可动电极的检测面的检测面。可移动电极可以根据物理量朝向固定电极移动，使得检测表面之间的距离是可变的。可移动和固定电极中的至少一个包括凹槽。凹槽设置在可移动和固定电极中的一个的顶部或底部上，具有从顶部或底部的预定深度，并且从检测表面延伸到相对的表面。

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