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1. 发明授权

US5306601A Fine pattern forming material and pattern forming method 失效
标题翻译：精细图案形成材料和图案形成方法
公开(公告)号：US5306601A
公开(公告)日：1994-04-26
申请号：US93032
申请日：1993-07-19
申请人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
发明人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
IPC分类号： G03F7/038 , G03F7/039 , G03C5/00
CPC分类号： B82Y30/00 , B82Y10/00 , G03F7/038 , G03F7/039 , C08G2261/1412 , C08G2261/3223 , Y10S430/143
摘要： Herein is provided a fine pattern forming method which is prevented from the charging-up phenomenon at the time of electric charged beam writing owing to the use of a polyalkylthiophene type conductive polymeric substance or a quaternary ammonium ion type polymeric substance in a monolayer or multilayer resist.
摘要翻译：本发明提供了一种精细图案形成方法，该方法由于在单层或多层抗蚀剂中使用聚烷基噻吩型导电聚合物或季铵离子型聚合物而防止充电光束写入时的充电现象。

2. 发明授权

US5093224A Process for producing fine patterns using cyclocarbosilane 失效
标题翻译：使用环磷酰胺生产精细图案的方法
公开(公告)号：US5093224A
公开(公告)日：1992-03-03
申请号：US496020
申请日：1990-03-20
申请人： Kazuhiko Hashimoto , Kenji Kawakita , Noboru Nomura
发明人： Kazuhiko Hashimoto , Kenji Kawakita , Noboru Nomura
IPC分类号： G03F7/004 , G03F7/075 , H01L21/027 , H01L21/30 , H01L21/3213
CPC分类号： G03F7/0754 , Y10S430/168
摘要： A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist film consisting of a cyclocarbosilane represented by the general formula (I): ##STR1## where R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are each hydrogen or an alkyl group,a polymer resin, and a photo acid generator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask. According to the present invention, a dry etching resistant precise fine resist pattern can be formed with high sensitivity.

3. 发明授权

US5030549A Fine pattern forming method 失效
标题翻译：精细图案形成方法
公开(公告)号：US5030549A
公开(公告)日：1991-07-09
申请号：US371289
申请日：1989-06-26
申请人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
发明人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
IPC分类号： G03F7/105 , G03F1/68 , G03F1/80 , G03F7/004 , G03F7/039 , G03F7/09 , G03F7/11 , G03F7/26 , G03F7/38 , G03F7/40 , H01L21/027 , H01L21/30
CPC分类号： G03F7/039 , G03F7/0047 , G03F7/093
摘要： Provided is a method for forming fine pattern free from shear of pattern caused by charging and high in dry etch resistance by using a high molecular organic film containing an organometallic complex or a metallic salt in single-layer or multi-layer resist process and treating the surface of this film with a reducing agent to form a metallic layer on the surface.

4. 发明授权

US5169494A Fine pattern forming method 失效
标题翻译：精细图案形成方法
公开(公告)号：US5169494A
公开(公告)日：1992-12-08
申请号：US742550
申请日：1991-08-08
申请人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
发明人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
IPC分类号： G03F7/039 , G03F7/09
CPC分类号： G03F7/094 , G03F7/039
摘要： The present invention provides a method of forming a fine pattern comprising the steps of forming on a semiconductor substrate an organic polymer film and heat treating it, forming on the organic polymer film an inorganic film and heat treating it, forming on the inorganic film an electron beam resist film and heat treating it, drawing a pattern on the resist film, developing it to form a resist pattern, and etching the inorganic film and the organic polymer film using the resist pattern as a mask, wherein the improvement comprises using one substance selected from the group consisting of a polyphenylene sulfide, a derivative thereof, and a polymer represented by the formula (I): ##STR1## where n is a positive integer, for forming at least one of the organic polymer film and the electron beam resist film. According to the present invention, it is possible to prevent charging by incident electrons, thereby keeping free of field butting and reduction of overlay accuracy, and to form an accurate and vertical fine resist pattern.
摘要翻译：本发明提供一种形成精细图案的方法，包括以下步骤：在半导体衬底上形成有机聚合物膜并进行热处理，在有机聚合物膜上形成无机膜并进行热处理，在无机膜上形成电子抗蚀剂膜并对其进行热处理，在抗蚀剂膜上绘制图案，将其显影以形成抗蚀剂图案，并使用抗蚀剂图案作为掩模蚀刻无机膜和有机聚合物膜，其中改进包括使用选择的一种物质由聚苯硫醚，其衍生物和由式（I）表示的聚合物组成：其中n为正整数，用于形成至少一个有机聚合物膜和电子光束抗蚀膜。根据本发明，可以防止入射电子的充电，从而保持无间隙对接和降低覆盖精度，并形成精确和垂直的精细抗蚀剂图案。

5. 发明授权

US4976818A Fine pattern forming method 失效
标题翻译：精细图案形成方法
公开(公告)号：US4976818A
公开(公告)日：1990-12-11
申请号：US520654
申请日：1990-04-24
申请人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
发明人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
IPC分类号： G03F7/004 , G03F7/09
CPC分类号： G03F7/094 , G03F7/004 , Y10S438/949
摘要： A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure, by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.
摘要翻译：通过用离子喷淋照射处理多层抗蚀剂的底层或中间层或含硅抗蚀剂，能够在电子束或聚焦离子束曝光时形成精细图案而不进行充电的精细图案形成方法或还原溶剂。

6. 发明授权

US4936951A Method of reducing proximity effect in electron beam resists 失效
标题翻译：减少电子束抗蚀剂邻近效应的方法
公开(公告)号：US4936951A
公开(公告)日：1990-06-26
申请号：US262871
申请日：1988-10-26
申请人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
发明人： Kazuhiko Hashimoto , Taichi Koizumi , Kenji Kawakita , Noboru Nomura
IPC分类号： G03F7/004 , G03F7/09
CPC分类号： G03F7/094 , G03F7/004 , Y10S438/949
摘要： A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure is provided by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.
摘要翻译：通过用离子淋洗处理多层抗蚀剂的底层或中间层或含硅抗蚀剂，可以提供在电子束或聚焦离子束曝光时无需充电形成精确精细图案的精细图案形成方法照射或还原溶剂。

7. 发明授权

US5527662A Process for forming fine pattern 失效
标题翻译：形成精细图案的工艺
公开(公告)号：US5527662A
公开(公告)日：1996-06-18
申请号：US185237
申请日：1994-01-24
申请人： Kazuhiko Hashimoto , Noboru Nomura
发明人： Kazuhiko Hashimoto , Noboru Nomura
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/09 , G03F7/20 , H01L21/027 , H01L21/30 , G03C5/00 , G03F7/38 , G03F7/40
CPC分类号： G03F7/039 , G03F7/038 , G03F7/094 , G03F7/2059 , Y10S430/143 , Y10S438/949
摘要： In a process using a single-layer or multi-layer resist, by using a resist material comprising an acid-decomposable polymer, an acid generator and a conducting polymer or a resist material comprising a monomer to be made reactive by an acid, an acid generator and a conducting polymer, there can be formed a fine pattern precisely without inviting charging during charged beam writing.
摘要翻译：在使用单层或多层抗蚀剂的方法中，通过使用包含酸可分解聚合物，酸产生剂和导电聚合物的抗蚀剂材料或包含由酸反应的单体的抗蚀材料，酸发电机和导电聚合物，可以精确地形成精细图案，而不会在带电波束写入期间带电充电。

8. 发明授权

US4996123A Optically oriented photoresist pattern forming method using organic crystal in photoresist layer with specified refracting indices formula 失效
$Optically oriented photoresist pattern forming method using organic crystal in photoresist layer with specified refracting indices formula$
标题翻译：光致抗蚀剂图案形成方法使用光刻胶层中有机晶体，具有指定的折射率公式
公开(公告)号：US4996123A
公开(公告)日：1991-02-26
申请号：US326414
申请日：1989-02-24
申请人： Noboru Nomura , Atsushi Ueno , Kazuhiko Hashimoto , Satoshi Kinoshita
发明人： Noboru Nomura , Atsushi Ueno , Kazuhiko Hashimoto , Satoshi Kinoshita
IPC分类号： G03F7/004 , G03F7/008 , G03F7/09 , G03F7/20
CPC分类号： G03F7/091 , G03F7/004 , G03F7/0085 , G03F7/2057
摘要： An optically oriented photoresist material comprised of an organic polymer and an organic crystal material each having a different refractive index to form an optically oriented layer on a substrate wherein the optical waveguide is formed by an effect of the refractive index difference, and in said waveguide layer thus formed, the spread and scattering of lights are suppressed and very fine mask patterns of said photoresist can be produced.
摘要翻译：一种由有机聚合物和有机晶体材料组成的光学取向的光致抗蚀剂材料，它们各自具有不同的折射率，以在基板上形成光学取向层，其中光波导通过折射率差的作用形成，并且在所述波导层由此形成，抑制了光的扩散和散射，并且可以产生所述光致抗蚀剂的非常精细的掩模图案。

9. 发明授权

US5186788A Fine pattern forming method 失效
标题翻译：精细图案形成方法
公开(公告)号：US5186788A
公开(公告)日：1993-02-16
申请号：US655237
申请日：1991-02-12
申请人： Kazuhiko Hashimoto , Kazuhiro Yamashita , Noboru Nomura
发明人： Kazuhiko Hashimoto , Kazuhiro Yamashita , Noboru Nomura
IPC分类号： G03F7/039 , G03F7/095 , G03F7/20
CPC分类号： G03F7/039 , G03F7/095 , G03F7/2022 , Y10S438/949
摘要： Disclosed is a fine pattern forming method which is capable of forming a high positive-to-negative reversal pattern high in dry-etch resistance, at high density, by irradiating an entire surface of a resist with ion shower at low doses before or after electron beam or focus ion beam exposure, and then developing it.
摘要翻译：公开了一种精细图案形成方法，其能够通过在电子之前或之后以低剂量用离子淋浴器照射抗蚀剂的整个表面，从而以高密度形成高耐干蚀刻电阻的高正负反转图案光束或聚焦离子束曝光，然后显影。

10. 发明授权

US5252430A Fine pattern forming method 失效
标题翻译：精细图案形成方法
公开(公告)号：US5252430A
公开(公告)日：1993-10-12
申请号：US812839
申请日：1991-12-20
申请人： Kazuhiko Hashimoto , Noboru Nomura
发明人： Kazuhiko Hashimoto , Noboru Nomura
IPC分类号： G03F7/004 , G03F7/20 , G03F7/38 , G03C5/00
CPC分类号： G03F7/0045 , G03F7/2059 , G03F7/38 , Y10S430/143
摘要： The fine pattern forming method includes the steps of applying an organic polymer film on a semiconductor substrate and heat treating the same; applying a resin solution (including an acid degradation polymer or an acid reactive monomer, an acid generator capable of generating an acid by irradiation with an electric charged beam, and a silicone resin) on the organic polymer layer and heat treating the same; carrying out a heat treatment after a pattern is written, causing the generated acid to react with the acid degradation polymer or the acid reactive monomer and carrying out a development in an alkaline solution to form a resist pattern; and etching the organic polymer layer using the resist pattern as a mask. The use of the resist layer including the silicone resin, the acid generator, and the acid degradation polymer or the acid reactive monomer enables an accurate fine resist pattern to be formed which has a high sensitivity and dry etching resistance, and in which charging is prevented when a pattern is written by a charged beam.
摘要翻译：精细图案形成方法包括以下步骤：在半导体衬底上施加有机聚合物膜并对其进行热处理; 在有机聚合物层上涂布树脂溶液（包括酸降解聚合物或酸反应性单体，能够通过带电束照射产生酸的酸产生剂和有机硅树脂）并对其进行热处理; 在图案写入之后进行热处理，使所产生的酸与酸降解聚合物或酸反应性单体反应，并在碱性溶液中进行显影以形成抗蚀剂图案; 并使用抗蚀图案作为掩模蚀刻有机聚合物层。使用包含硅树脂，酸产生剂，酸降解聚合物或酸反应性单体的抗蚀剂层，能够形成具有高灵敏度和耐干蚀刻性的精确的抗蚀剂图案，并且防止充电当图案由带电束写入时。

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