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1. 发明授权

US08173537B1 Methods for reducing UV and dielectric diffusion barrier interaction 有权
标题翻译：减少紫外和介电扩散屏障相互作用的方法
公开(公告)号：US08173537B1
公开(公告)日：2012-05-08
申请号：US11693617
申请日：2007-03-29
申请人： Kaushik Chattopadhyay , Keith Fox , Tom Mountsier , Hui-Jung Wu , Bart van Schravendijk , Kimberly Branshaw
发明人： Kaushik Chattopadhyay , Keith Fox , Tom Mountsier , Hui-Jung Wu , Bart van Schravendijk , Kimberly Branshaw
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L23/53295 , H01L21/6719 , H01L21/67201 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Stability of an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer is critical for successful integration. UV-resistant diffusion barrier layers are formed by depositing the layer in a hydrogen-starved environment. Diffusion barrier layers can be made more resistant to UV radiation by thermal, plasma, or UV treatment during or after deposition. Lowering the modulus of the diffusion barrier layer can also improve the resistance to UV radiation.
摘要翻译：沉积期间的底层电介质扩散屏障和上覆介质层的紫外（UV）处理的稳定性对成功整合至关重要。通过在氢饥饿环境中沉积该层而形成耐UV扩散阻挡层。扩散阻挡层可以通过在沉积期间或之后的热，等离子体或UV处理更耐紫外线辐射。降低扩散阻挡层的模量也可以提高耐UV辐射。

2. 发明授权

US08124522B1 Reducing UV and dielectric diffusion barrier interaction through the modulation of optical properties 有权
标题翻译：通过光学性质的调制降低紫外和介电扩散屏障的相互作用
公开(公告)号：US08124522B1
公开(公告)日：2012-02-28
申请号：US12082496
申请日：2008-04-11
申请人： Hui-Jung Wu , Kimberly Shafi , Kaushik Chattopadhyay , Keith Fox , Tom Mountsier , Girish Dixit , Bart van Schravendijk , Elizabeth Apen
发明人： Hui-Jung Wu , Kimberly Shafi , Kaushik Chattopadhyay , Keith Fox , Tom Mountsier , Girish Dixit , Bart van Schravendijk , Elizabeth Apen
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53295 , H01L21/76825 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Provided are methods of stabilizing an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer. Methods include modulating the optical properties reduces the effects of UV radiation on the dielectric diffusion barrier layer. The dielectric diffusion barrier can be made to absorb less UV radiation. A dielectric layer with UV absorbing properties may also be added on top of the diffusion barrier layer so less UV is transmitted. Both methods result in reduced interaction between UV radiation and the dielectric diffusion barrier.
摘要翻译：提供了在沉积期间稳定底层电介质扩散阻挡层的方法，以及覆盖介电层的紫外线（UV）处理。方法包括调制光学特性降低了UV辐射对介电扩散阻挡层的影响。可以使电介质扩散阻挡层吸收较少的UV辐射。具有UV吸收特性的电介质层也可以添加到扩散阻挡层的顶部，因此传输较少的UV。两种方法都会降低紫外线辐射与介电扩散阻挡层之间的相互作用。

3. 发明授权

US08741394B2 In-situ deposition of film stacks 有权
标题翻译：膜叠层的原位沉积
公开(公告)号：US08741394B2
公开(公告)日：2014-06-03
申请号：US12970846
申请日：2010-12-16
申请人： Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk
发明人： Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk
IPC分类号： H05H1/24
CPC分类号： C23C16/50 , C23C16/24 , C23C16/345 , C23C16/402 , C23C16/4401 , C23C16/45512 , C23C16/45523 , C23C16/45565 , C23C16/45574 , C23C16/509 , C23C16/52 , C23C16/54 , H01L21/02123 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/6719 , H01L21/67201 , H01L21/67207
摘要： Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.
摘要翻译：描述了通过等离子体增强化学气相沉积沉积膜堆叠的方法。在一个实例中，提供了一种用于在基底上沉积薄膜叠层的方法，其中薄膜叠层包括不同组成的薄膜，并且沉淀是在原位进行的。该方法包括在第一等离子体活化膜沉积阶段中，在衬底上沉积具有第一膜组成的第一层膜; 在第二等离子体激活沉积阶段中，在第一层膜上沉积具有第二膜组成的第二层膜; 以及在将等离子体的组成从第一等离子体激活膜沉积阶段转移到第二等离子体激活膜沉积阶段期间维持等离子体。

4. 发明申请

US20130171834A1 IN-SITU DEPOSITION OF FILM STACKS 有权
标题翻译：电影堆栈的现场沉积
公开(公告)号：US20130171834A1
公开(公告)日：2013-07-04
申请号：US13671424
申请日：2012-11-07
申请人： Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Spiram , George Andrew Antonelli , Bart van Schravendijk
发明人： Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Spiram , George Andrew Antonelli , Bart van Schravendijk
IPC分类号： H01L21/02
CPC分类号： H01L21/0234 , C23C16/24 , C23C16/345 , C23C16/402 , C23C16/4401 , C23C16/45523 , C23C16/509 , C23C16/54 , H01L21/02123 , H01L21/02164 , H01L21/022 , H01L21/02274
摘要： Disclosed herein are methods of forming a film stack which may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Also disclosed herein are process station apparatuses for forming a film stack of silicon nitride and silicon oxide films which may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.
摘要翻译：本文公开了形成膜堆叠的方法，其可以包括由含氮前体与含硅前体的反应形成的氮化硅膜的等离子体加速沉积，等离子体加速从处理室中显着消除含硅前体，等离子体在由含硅前体与氧化剂的反应形成的氮化硅膜的顶部加速沉积氧化硅膜，并且等离子体加速了处理室中的氧化剂的显着消除。本文还公开了用于形成氮化硅和氧化硅膜的膜堆叠的处理站装置，其可以包括处理室，一个或多个气体输送管线，一个或多个RF发生器，以及具有指令的机器可读介质的系统控制器用于操作一个或多个气体输送管线和一个或多个RF发生器。

5. 发明申请

US20110236600A1 Smooth Silicon-Containing Films 有权
标题翻译：光滑的含硅膜
公开(公告)号：US20110236600A1
公开(公告)日：2011-09-29
申请号：US12970853
申请日：2010-12-16
申请人： Keith Fox , Dong Niu , Joe Womack , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk , Jennifer O'Loughlin
发明人： Keith Fox , Dong Niu , Joe Womack , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk , Jennifer O'Loughlin
IPC分类号： H05H1/24
CPC分类号： C23C16/505 , C23C16/24 , C23C16/345 , C23C16/402 , C23C16/4401 , C23C16/45523 , C23C16/509 , C23C16/54 , H01L21/02104 , H01L21/02123 , H01L21/02129 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02263 , H01L21/02274 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/0254 , H01L21/6719 , H01L21/67201 , H01L21/67207 , H01L21/8229
摘要： Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate.
摘要翻译：描述了用于沉积超光滑含硅膜和膜堆的方法和硬件。在一个实例中，公开了在等离子体增强化学气相沉积设备中在衬底上形成含硅膜的方法的实施例，该方法包括向等离子体增强化学气相沉积设备供应含硅反应物; 向等离子体增强化学气相沉积设备供应共反应物; 向等离子体增强化学气相沉积设备的处理站提供电容耦合等离子体，所述等离子体包括由含硅反应物产生的硅自由基和由共反应物产生的共反应物基团; 以及将所述含硅膜沉积在所述基底上，所述含硅膜的折射率在1.4和2.1之间，所述含硅膜还具有在硅衬底上测得的绝对粗糙度小于或等于4.5的值。

6. 发明申请

US20110236594A1 In-Situ Deposition of Film Stacks 有权
标题翻译：电影院原位沉积
公开(公告)号：US20110236594A1
公开(公告)日：2011-09-29
申请号：US12970846
申请日：2010-12-16
申请人： Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk
发明人： Jason Haverkamp , Pramod Subramonium , Joe Womack , Dong Niu , Keith Fox , John Alexy , Patrick Breiling , Jennifer O'Loughlin , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk
IPC分类号： C23C16/56 , H05H1/24 , C23C16/04 , B05D3/06
CPC分类号： C23C16/50 , C23C16/24 , C23C16/345 , C23C16/402 , C23C16/4401 , C23C16/45512 , C23C16/45523 , C23C16/45565 , C23C16/45574 , C23C16/509 , C23C16/52 , C23C16/54 , H01L21/02123 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/6719 , H01L21/67201 , H01L21/67207
摘要： Methods and hardware for depositing film stacks in a process tool in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a method for depositing, on a substrate, a film stack including films of different compositions in-situ in a process station using a plasma is described, the method including, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.
摘要翻译：描述了用于在原位（即，没有真空断裂或空气曝光）在工艺工具中沉积薄膜叠层的方法和硬件。在一个实例中，描述了一种在基板上使用等离子体在处理站中原位沉积包括不同组成的膜的膜堆叠的方法，所述方法包括在第一等离子体激活膜沉积阶段中沉积在所述基板上具有第一膜组成的第一层膜; 在第二等离子体激活沉积阶段中，在第一层膜上沉积具有第二膜组成的第二层膜; 以及在将等离子体的组成从第一等离子体激活膜沉积阶段转移到第二等离子体激活膜沉积阶段期间维持等离子体。

7. 发明授权

US08709551B2 Smooth silicon-containing films 有权
标题翻译：光滑的含硅膜
公开(公告)号：US08709551B2
公开(公告)日：2014-04-29
申请号：US12970853
申请日：2010-12-16
申请人： Keith Fox , Dong Niu , Joe Womack , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk , Jennifer O'Loughlin
发明人： Keith Fox , Dong Niu , Joe Womack , Mandyam Sriram , George Andrew Antonelli , Bart van Schravendijk , Jennifer O'Loughlin
IPC分类号： C23C16/509 , C23C16/505 , C23C16/455 , C23C16/34 , C23C16/40 , C23C16/24 , H01L21/02 , H01L21/8229
CPC分类号： C23C16/505 , C23C16/24 , C23C16/345 , C23C16/402 , C23C16/4401 , C23C16/45523 , C23C16/509 , C23C16/54 , H01L21/02104 , H01L21/02123 , H01L21/02129 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02263 , H01L21/02274 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/0254 , H01L21/6719 , H01L21/67201 , H01L21/67207 , H01L21/8229
摘要： Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate.
摘要翻译：描述了用于沉积超光滑含硅膜和膜堆的方法和硬件。在一个实例中，公开了在等离子体增强化学气相沉积设备中在衬底上形成含硅膜的方法的实施例，该方法包括向等离子体增强化学气相沉积设备供应含硅反应物; 向等离子体增强化学气相沉积设备供应共反应物; 向等离子体增强化学气相沉积设备的处理站提供电容耦合等离子体，所述等离子体包括由含硅反应物产生的硅自由基和由共反应物产生的共反应物基团; 以及将所述含硅膜沉积在所述基底上，所述含硅膜的折射率在1.4和2.1之间，所述含硅膜还具有在硅衬底上测得的绝对粗糙度小于或等于4.5的值。

8. 发明授权

US08563414B1 Methods for forming conductive carbon films by PECVD 有权
标题翻译：通过PECVD形成导电碳膜的方法
公开(公告)号：US08563414B1
公开(公告)日：2013-10-22
申请号：US12766721
申请日：2010-04-23
申请人： Keith Fox , Dennis Hausmann
发明人： Keith Fox , Dennis Hausmann
IPC分类号： C23C8/54 , C23C14/28
CPC分类号： C23C16/26 , C23C16/505
摘要： Conductive carbon films having a resistivity of less than about 0.2 Ohm-cm, preferably less than about 0.05 Ohm-cm, are deposited by PECVD. Conductive carbon films are essentially free of sp3-hybridized carbon and contain predominantly sp2 carbon, based on IR spectral features. Carbon content of the films is at least about 75% atomic C. Conductive carbon films may contain hydrogen, but are typically hydrogen-poor, containing less than about 20% H. In some embodiments, conductive carbon films further contain nitrogen (N). For example, conductive films having a CxHyNz composition, where nitrogen is present at between about 5-10% atomic, have both high conductivity and low roughness, because introduction of nitrogen delays formation of crystallites in the film. The films are deposited at a process temperature of at least about 620° C., and at a pressure of less than about 20 Torr in a dual-frequency plasma process dominated by low frequency (LF) plasma.
摘要翻译：通过PECVD沉积电阻率小于约0.2欧姆 - 厘米，优选小于约0.05欧姆 - 厘米的导电碳膜。基于IR光谱特征，导电碳膜基本上不含sp3杂化碳并主要含有sp2碳。膜的碳含量为至少约75％原子C.导电碳膜可能含有氢，但通常为氢贫，含量小于约20％H.在一些实施方案中，导电碳膜还含有氮（N）。例如，由于氮的引入会延缓薄膜中的微晶形成，所以具有C 5 H 10 Nz组成的导电膜，其中氮存在于约5-10％原子之间，具有高导电性和低粗糙度。在由低频（LF）等离子体主导的双频等离子体工艺中，膜的至少约620℃的处理温度和小于约20托的压力下沉积。

9. 发明授权

US07622400B1 Method for improving mechanical properties of low dielectric constant materials 有权
标题翻译：改善低介电常数材料力学性能的方法
公开(公告)号：US07622400B1
公开(公告)日：2009-11-24
申请号：US10849568
申请日：2004-05-18
申请人： Keith Fox , Easwar Srinivasan , David Mordo , Qingguo Wu
发明人： Keith Fox , Easwar Srinivasan , David Mordo , Qingguo Wu
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76801 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/3105 , H01L21/31629 , H01L21/31633 , H01L21/76826
摘要： Methods of forming a dielectric layer having a low dielectric constant and high mechanical strength are provided. The methods involve depositing a sub-layer of the dielectric material on a substrate, followed by treating the sub-layer with a plasma. The process of depositing and plasma treating the sub-layers is repeated until a desired thickness has been reached.
摘要翻译：提供了形成具有低介电常数和高机械强度的介电层的方法。所述方法包括将电介质材料的子层沉积在衬底上，随后用等离子体处理子层。重复沉积和等离子体处理子层的过程，直到达到所需的厚度。

10. 发明授权

US11278141B2 Garment and hood hanger 有权
公开(公告)号：US11278141B2
公开(公告)日：2022-03-22
申请号：US15865048
申请日：2018-01-08
申请人： Laura Fox , Keith Fox
发明人： Laura Fox , Keith Fox
IPC分类号： A47G25/20
摘要： An apparatus for hanging a garment comprising a vertical suspension member hangable from a body, a garment support member suspended from the suspension member, the garment support member extending laterally from opposed sides of the suspension member; and an arcuate hood support member extending between first and second ends and having a midpoint therebetween, wherein the first and second ends of the hood support member are secured to the garment support member and wherein the midpoint of the hood support member is cantilevered upward from the garment support member. A method for hanging a garment comprising providing an apparatus for hanging a garment, positioning a shoulder portion of the garment on the garment support member with the suspension member extending above the shoulder portion, positioning a hood on the hood support member and hanging the apparatus on a support.

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