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1. 发明授权

US08846437B2 High efficiency thin film transistor device with gallium arsenide layer 有权
标题翻译：具有砷化镓层的高效薄膜晶体管器件
公开(公告)号：US08846437B2
公开(公告)日：2014-09-30
申请号：US13250748
申请日：2011-09-30
申请人： Kaushal K. Singh , Robert Jan Visser , Srikant Rao , Bhaskar Kumar , Claire J. Carmalt , Ranga Rao Arnepalli , Omkaram Nalamasu , Gaurav Saraf , Sanjayan Sathasivam , Christopher Stuart Blackman
发明人： Kaushal K. Singh , Robert Jan Visser , Srikant Rao , Bhaskar Kumar , Claire J. Carmalt , Ranga Rao Arnepalli , Omkaram Nalamasu , Gaurav Saraf , Sanjayan Sathasivam , Christopher Stuart Blackman
IPC分类号： H01L21/00 , H01L21/02 , B82Y30/00 , H01L31/18 , H01L31/072 , H01L31/0352 , H01L51/42 , C23C16/56 , H01L31/075 , H01L31/0224 , C23C16/30 , H01L51/00
CPC分类号： H01L29/78681 , B82Y10/00 , B82Y30/00 , C23C16/301 , C23C16/56 , H01L21/0237 , H01L21/02491 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/3245 , H01L27/1225 , H01L27/127 , H01L29/207 , H01L29/454 , H01L29/66742 , H01L29/78618 , H01L29/78696 , H01L31/022425 , H01L31/035227 , H01L31/072 , H01L31/075 , H01L31/184 , H01L31/1864 , H01L51/0048 , H01L51/424 , Y02E10/544 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.
摘要翻译：本发明的实施例提供从基于溶液的前体形成掺杂的砷化镓（GaAs）层的方法。由基于溶液的前体形成的掺杂砷化镓（GaAs）层可以帮助太阳能电池器件改善光吸收和转换效率。在一个实施例中，形成太阳能电池器件的方法包括在衬底的表面上形成掺杂有第一类掺杂剂的第一层，在第一层上形成GaAs基层，并形成具有第二层的第二层在GaAs基层上掺杂的掺杂剂的类型。

2. 发明申请

US20120080753A1 GALLIUM ARSENIDE BASED MATERIALS USED IN THIN FILM TRANSISTOR APPLICATIONS 审中-公开
标题翻译：用于薄膜晶体管应用的基于砷化镓的材料
公开(公告)号：US20120080753A1
公开(公告)日：2012-04-05
申请号：US13250766
申请日：2011-09-30
申请人： Kaushal K. Singh , Robert Jan Visser , Bhaskar Kumar
发明人： Kaushal K. Singh , Robert Jan Visser , Bhaskar Kumar
IPC分类号： H01L29/786 , H01L21/20 , H01L21/336
CPC分类号： H01L29/78681 , B82Y10/00 , B82Y30/00 , C23C16/301 , C23C16/56 , H01L21/0237 , H01L21/02491 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/3245 , H01L27/1225 , H01L27/127 , H01L29/207 , H01L29/454 , H01L29/66742 , H01L29/78618 , H01L29/78696 , H01L31/022425 , H01L31/035227 , H01L31/072 , H01L31/075 , H01L31/184 , H01L31/1864 , H01L51/0048 , H01L51/424 , Y02E10/544 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： Embodiments of the invention provide a method of forming a group III-V material utilized in thin film transistor devices. In one embodiment, a gallium arsenide based (GaAs) layer with or without dopants formed from a solution based precursor may be utilized in thin film transistor devices. The gallium arsenide based (GaAs) layer formed from the solution based precursor may be incorporated in thin film transistor devices to improve device performance and device speed. In one embodiment, a thin film transistor structure includes a gate insulator layer disposed on a substrate, a GaAs based layer disposed over the gate insulator layer, and a source-drain metal electrode layer disposed adjacent to the GaAs based layer.
摘要翻译：本发明的实施例提供一种形成薄膜晶体管器件中使用的III-V族材料的方法。在一个实施例中，可以在薄膜晶体管器件中使用具有或不具有由基于溶液的前体形成的掺杂剂的基于砷化镓的（GaAs）层。由基于溶液的前体形成的基于砷化镓的（GaAs）层可以结合在薄膜晶体管器件中，以提高器件性能和器件速度。在一个实施例中，薄膜晶体管结构包括设置在基板上的栅极绝缘体层，设置在栅极绝缘体层上的GaAs基层以及与GaAs基层相邻设置的源极 - 漏极金属电极层。

3. 发明申请

US20120080092A1 HIGH EFFICIENCY SOLAR CELL DEVICE WITH GALLIUM ARSENIDE ABSORBER LAYER 有权
标题翻译：高效率太阳能电池组件，具有阿塞拜疆吸收层
公开(公告)号：US20120080092A1
公开(公告)日：2012-04-05
申请号：US13250748
申请日：2011-09-30
申请人： Kaushal K. Singh , Robert Jan Visser , Srikant Rao , Bhaskar Kumar , Claire J. Carmalt , Ranga Rao Arnepalli , Omkaram Nalamasu , Gaurav Saraf , Sanjayan Sathasivam , Christopher Stuart Blackman
发明人： Kaushal K. Singh , Robert Jan Visser , Srikant Rao , Bhaskar Kumar , Claire J. Carmalt , Ranga Rao Arnepalli , Omkaram Nalamasu , Gaurav Saraf , Sanjayan Sathasivam , Christopher Stuart Blackman
IPC分类号： H01L31/0264 , H01L31/18 , B82Y40/00
CPC分类号： H01L29/78681 , B82Y10/00 , B82Y30/00 , C23C16/301 , C23C16/56 , H01L21/0237 , H01L21/02491 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/3245 , H01L27/1225 , H01L27/127 , H01L29/207 , H01L29/454 , H01L29/66742 , H01L29/78618 , H01L29/78696 , H01L31/022425 , H01L31/035227 , H01L31/072 , H01L31/075 , H01L31/184 , H01L31/1864 , H01L51/0048 , H01L51/424 , Y02E10/544 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.
摘要翻译：本发明的实施例提供从基于溶液的前体形成掺杂的砷化镓（GaAs）层的方法。由基于溶液的前体形成的掺杂砷化镓（GaAs）层可以帮助太阳能电池器件改善光吸收和转换效率。在一个实施例中，形成太阳能电池器件的方法包括在衬底的表面上形成掺杂有第一类掺杂剂的第一层，在第一层上形成GaAs基层，并形成具有第二层的第二层在GaAs基层上掺杂的掺杂剂的类型。

4. 发明申请

US20110263074A1 APPARATUS AND METHODS FOR REDUCING LIGHT INDUCED DAMAGE IN THIN FILM SOLAR CELLS 审中-公开
标题翻译：用于减少薄膜太阳能电池中的光诱导损伤的装置和方法
公开(公告)号：US20110263074A1
公开(公告)日：2011-10-27
申请号：US12765458
申请日：2010-04-22
申请人： Amir Al-Bayati , Yong K. Chae , Shuran Sheng , Bhaskar Kumar , Eran Valfer
发明人： Amir Al-Bayati , Yong K. Chae , Shuran Sheng , Bhaskar Kumar , Eran Valfer
IPC分类号： H01L31/18
CPC分类号： H01L31/202 , C23C16/24 , C23C16/505 , H01L21/02532 , H01L21/0262 , H01L31/03767 , Y02E10/50 , Y02P70/521
摘要： Apparatus and methods for forming a silicon-containing i-layer on a substrate for a thin film photovoltaic cell are disclosed. The apparatus includes a chamber body defining a processing region containing the substrate, a hydrogen source and a silane source coupled to a plasma generation region, an RF power source that applies power at a power level in the plasma generation region to generate a plasma and deposit the silicon-containing i-layer at a selected deposition rate to a selected thickness and a controller. The controller controls the power level and the deposition rate of the i-layer on the substrate such that the thin film solar cell exhibits light induced damage that conforms to a linear fit of the product of the RF power, the deposition rate and the selected thickness of the i-layer. In accordance with further aspects of the present invention, the controller controls the RF power and the deposition rate so that a product (x) of the RF power in watts, the deposition rate of the i-layer in nm per min and the thickness of the i-layer in nm is less than a predetermined number y and satisfies the equation y=5E11*x+3.3749 plus or minus a margin.
摘要翻译：公开了一种在用于薄膜光伏电池的衬底上形成含硅i层的设备和方法。该装置包括限定包含衬底的处理区域，氢源和耦合到等离子体产生区域的硅烷源的室主体，在等离子体产生区域中以功率电平施加功率以产生等离子体和沉积物的RF电源将所选择的沉积速率的含硅i层以选定的厚度和控制器进行。控制器控制i层在基板上的功率水平和沉积速率，使得薄膜太阳能电池呈现符合RF功率，沉积速率和所选厚度的产品的线性拟合的光诱导损伤的i层。根据本发明的另外的方面，控制器控制RF功率和沉积速率，使得RF功率的乘积（x）以瓦为单位，i层的沉积速率（nm / min）和 i层的nm小于预定数量y，并且满足等式y = 5E11 * x + 3.3749加或减边缘。

5. 发明授权

US08895842B2 High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells 有权
标题翻译：高效率薄膜硅太阳能电池的高品质TCO硅接口接触结构
公开(公告)号：US08895842B2
公开(公告)日：2014-11-25
申请号：US12481175
申请日：2009-06-09
申请人： Shuran Sheng , Yong Kee Chae , Stefan Klein , Amir Al-Bayati , Bhaskar Kumar
发明人： Shuran Sheng , Yong Kee Chae , Stefan Klein , Amir Al-Bayati , Bhaskar Kumar
IPC分类号： H01L31/00 , H01L21/00 , H01L31/20 , H01L31/076 , H01L31/0224 , C23C16/24 , H01L31/18
CPC分类号： H01L31/076 , C23C16/24 , H01L31/022466 , H01L31/022483 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first TCO layer disposed on a substrate, a second TCO layer disposed on the first TCO layer, and a p-type silicon containing layer formed on the second TCO layer. In another embodiment, a method of forming a photovoltaic device includes forming a first TCO layer on a substrate, forming a second TCO layer on the first TCO layer, and forming a first p-i-n junction on the second TCO layer.
摘要翻译：提供一种用于形成太阳能电池的方法和装置。在一个实施例中，光伏器件包括设置在衬底上的第一TCO层，设置在第一TCO层上的第二TCO层和形成在第二TCO层上的p型含硅层。在另一个实施例中，形成光伏器件的方法包括在衬底上形成第一TCO层，在第一TCO层上形成第二TCO层，以及在第二TCO层上形成第一p-i-n结。

6. 发明申请

US20100051098A1 HIGH QUALITY TCO-SILICON INTERFACE CONTACT STRUCTURE FOR HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS 有权
标题翻译：高性能TCO硅界面接触结构，用于高效薄膜硅太阳能电池
公开(公告)号：US20100051098A1
公开(公告)日：2010-03-04
申请号：US12481175
申请日：2009-06-09
申请人： Shuran Sheng , Yong Kee Chae , Stefan Klein , Amir Al-Bayati , Bhaskar Kumar
发明人： Shuran Sheng , Yong Kee Chae , Stefan Klein , Amir Al-Bayati , Bhaskar Kumar
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/076 , C23C16/24 , H01L31/022466 , H01L31/022483 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first TCO layer disposed on a substrate, a second TCO layer disposed on the first TCO layer, and a p-type silicon containing layer formed on the second TCO layer. In another embodiment, a method of forming a photovoltaic device includes forming a first TCO layer on a substrate, forming a second TCO layer on the first TCO layer, and forming a first p-i-n junction on the second TCO layer.
摘要翻译：提供一种用于形成太阳能电池的方法和装置。在一个实施例中，光伏器件包括设置在衬底上的第一TCO层，设置在第一TCO层上的第二TCO层和形成在第二TCO层上的p型含硅层。在另一个实施例中，形成光伏器件的方法包括在衬底上形成第一TCO层，在第一TCO层上形成第二TCO层，以及在第二TCO层上形成第一p-i-n结。

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