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    • 4. 发明授权
    • Discharge lamp lighting device, illumination device, and projector
    • 放电灯照明装置,照明装置和投影仪
    • US07511432B2
    • 2009-03-31
    • US10542415
    • 2004-01-16
    • Koji WatanabeKiyoaki UchihashiHisaji ItoToshiaki SasakiJunichi HasegawaKatsuyoshi Nakada
    • Koji WatanabeKiyoaki UchihashiHisaji ItoToshiaki SasakiJunichi HasegawaKatsuyoshi Nakada
    • H05B37/02H05B39/04
    • H05B41/2928H05B41/386
    • In a chopper circuit, output power is controllable with a direct current power source as a power source, and a smoothing capacitor is connected between output terminals of the chopper circuit. A polarity inversion circuit applies an alternating voltage to a high pressure discharge lamp with a voltage across the smoothing capacitor as a power source. The output power of the chopper circuit and an inversion frequency of the polarity inversion circuit are controlled by a control circuit based upon a terminal voltage of the smoothing capacitor, which is detected by a voltage detecting circuit. In the control circuit, a switch voltage is set for defining a range of voltages detected by the voltage detecting circuit, and the inversion frequency is changed in plural stages according to the magnitude relation between the detected voltage and the switch voltage. The inversion frequency corresponding to electric power applied to the high pressure discharge lamp is set with respect to each range of lamp voltages, to thereby inhibit occurrence of an arc jump.
    • 在斩波电路中,输出功率由直流电源作为电源控制,平滑电容器连接在斩波电路的输出端子之间。 极性反转电路将交流电压施加到具有作为电源的平滑电容器两端的电压的高压放电灯。 斩波电路的输出功率和极性反转电路的反转频率由基于由电压检测电路检测的平滑电容器的端子电压的控制电路来控制。 在控制电路中,设定用于定义电压检测电路检测出的电压范围的开关电压,根据检测电压与开关电压之间的大小关系,反转频率变化多级。 相对于每个灯电压范围设定对应于施加到高压放电灯的电力的反转频率,从而抑制电弧跳跃的发生。
    • 8. 发明授权
    • Sleep state measuring apparatus and sleep state measuring method
    • 睡眠状态测量仪和睡眠状态测量方法
    • US08092399B2
    • 2012-01-10
    • US12222828
    • 2008-08-18
    • Toshiaki Sasaki
    • Toshiaki Sasaki
    • A61B5/103A61B5/117
    • A61B5/0205A61B5/0816A61B5/11A61B5/113A61B5/4806A61B5/4818A61B5/6887A61B5/6892A61B2562/0247
    • Even if a mattress or the like suffers long-term deterioration, a sleep state measuring apparatus is provided which can set a suitable amplification factor A of a biosignal. The sleep state measuring apparatus detects the biosignal which changes depending on the sleep state of a person who gets on the mattress filled with water, amplifies the biosignal, and estimates the sleep state based on the biosignal. A static component P of the mattress internal pressure detected by a biosignal sensor is first obtained (S 11). The mattress internal pressure is the pressure of water in the mattress. From the static component P of the mattress internal pressure, a fluctuation part ΔV of the mattress internal pressure depending on the value is specified (S 12). Each value of the fluctuation part ΔV of the mattress internal pressure is obtained beforehand by applying a predetermined load, and changing the static component P of the mattress internal pressure. The above-described amplification factor A is calculated by correcting predetermined standard amplification factor A0 with the specified fluctuation part ΔV (S 13).
    • 即使床垫等遭受长期恶化,也可以设置睡眠状态测定装置,该睡眠状态测定装置能够设定生物信号的合适的放大倍数A. 睡眠状态测量装置检测根据进入充满水的床垫的人的睡眠状态而变化的生物信号,放大生物信号,并基于生物信号估计睡眠状态。 首先获得由生物信号传感器检测到的床垫内部压力的静态分量P(S11)。 床垫的内部压力是床垫中的水压。 根据床垫内部压力的静态成分P,规定床垫内部压力的变动量&Dgr; V,取决于该值。(S12)。 通过施加预定的负荷,改变床垫内压的静态成分P,预先获得床垫内压的变动部分&Dgr; V的每个值。 通过用指定的波动部分&Dgr; V(S 13)校正预定的标准放大因子A0来计算上述放大因子A.
    • 9. 发明申请
    • Silicon-based thin-film photoeclectric converter and method of manufacturing the same
    • 硅基薄膜光电转换器及其制造方法
    • US20090133753A1
    • 2009-05-28
    • US11991141
    • 2006-07-25
    • Toshiaki SasakiKenji Yamamoto
    • Toshiaki SasakiKenji Yamamoto
    • H01L31/00B05D5/12
    • H01L31/075H01L31/076H01L31/202Y02E10/548Y02P70/521
    • In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiOx layer is inserted to obtain an optical confinement effect, the silicon-based thin-film photoelectric converter according to the present invention includes an i-type photoelectric conversion layer of hydrogenated amorphous silicon or an alloy thereof, an i-type buffer layer made of hydrogenated amorphous silicon, and an n-type Si1-xOx layer (x is 0.25-0.6) stacked successively, wherein the buffer layer has a higher hydrogen concentration at its interface with and as compared with the photoelectric conversion layer and has a thickness of at least 5 nm and at most 50 nm. Accordingly, generation of silicon crystal phase parts and reduction of resistivity are promoted in the n-type Si1-xOx layer, contact resistance at the interface is reduced, and FF of the photoelectric converter is improved, so that the photoelectric converter achieves improved properties.
    • 为了提高插入导电性SiO x层的硅系薄膜光电转换器的光电转换性能,得到光限制效果,本发明的硅系薄膜光电转换元件包括:i- 氢化非晶硅或其合金的类型光电转换层,由氢化非晶硅制成的i型缓冲层和n型Si1-xOx层(x为0.25-0.6),其中缓冲层具有 在与光电转换层相比的界面处的氢浓度较高,并且具有至少5nm至最多50nm的厚度。 因此,在n型Si1-xOx层中促进硅晶相的产生和电阻率的降低,界面处的接触电阻降低,光电转换器的FF提高,光电转换器实现了改善的性能。