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1. 发明申请

US20060252044A1 Biochip and biochip kit, and method of producing the same and method of using the same 审中-公开
标题翻译：生物芯片和生物芯片试剂盒及其制备方法及其使用方法
公开(公告)号：US20060252044A1
公开(公告)日：2006-11-09
申请号：US10554218
申请日：2004-04-23
申请人： Katsuya Okumura , Makoto Mihara , Mutsuhiko Yoshioka
发明人： Katsuya Okumura , Makoto Mihara , Mutsuhiko Yoshioka
IPC分类号： C12Q1/68 , C12M1/34 , H01L21/00
CPC分类号： B01L3/50255 , B01L2300/0681 , B01L2300/0819 , G01N33/54373
摘要： There are provided a biochip and a biochip kit, in which a target contained in an analyte is reacted with a probe with high efficiency in a short time, B/F separation efficiency is high, and high-sensitive quantitative determination and detection can be realized, and a production process thereof, and a method for reacting a target contained in an analyte with a probe, and, for example, separation and fractionation method and a detection and identification method for a target contained in an analyte, using the biochip kit. The biochip according to the present invention comprises a well(s) provided with a filter comprising straight pores, with a uniform pore diameter, provided at uniform pore spacings. A dispersion with probe-supported particles dispersed therein is contained in the well, and an analyte is placed in the well(s) to react the analyte with the probe-supported particles. A solution such as an analyte solution can be introduced into or discharged from the well through the filter.
摘要翻译：提供了生物芯片和生物芯片试剂盒，其中包含在分析物中的靶在短时间内与探针高效率地反应，B / F分离效率高，并且可以实现高灵敏度的定量测定和检测及其制备方法，以及使用生物芯片试剂盒使包含在分析物中的靶与探针反应的方法，例如分离和分级方法以及包含在分析物中的靶的检测和鉴定方法。根据本发明的生物芯片包括设置有均匀孔隙的具有均匀孔径的直孔的过滤器，孔设置成均匀的孔隙。将分散在其中的探针负载颗粒的分散体包含在孔中，并将分析物放置在孔中以使分析物与探针负载的颗粒反应。诸如分析物溶液的溶液可以通过过滤器引入或从井中排出。

2. 发明授权

US09034467B2 Reticle chuck cleaner 有权
标题翻译：标线卡盘清洁剂
公开(公告)号：US09034467B2
公开(公告)日：2015-05-19
申请号：US13192694
申请日：2011-07-28
申请人： Masamitsu Itoh , Katsuya Okumura , Taro Inada , Jun Watanabe
发明人： Masamitsu Itoh , Katsuya Okumura , Taro Inada , Jun Watanabe
IPC分类号： B32B7/12 , B08B7/00 , G03F7/20
CPC分类号： B08B7/0028 , B05D3/0254 , B05D5/00 , G03F7/707 , G03F7/70925 , Y10T428/28 , Y10T428/2848
摘要： According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.
摘要翻译：根据一个实施例，用于清洁EUV曝光装置的光罩卡盘的掩模版卡盘清洁器包括具有要携带到EUV曝光装置的掩模版卡盘的形状的基板，以及形成在其中一个主表面上的粘合剂基质。

3. 发明申请

US20130313429A1 METHOD AND APPARATUS FOR INSPECTING SAMPLE SURFACE 有权
公开(公告)号：US20130313429A1
公开(公告)日：2013-11-28
申请号：US13954425
申请日：2013-07-30
申请人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Kenji Terao , Masahiro Hatakeyama , Katsuya Okumura
发明人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Kenji Terao , Masahiro Hatakeyama , Katsuya Okumura
IPC分类号： H01J37/26
CPC分类号： H01J37/265 , G01R31/307 , H01J37/04 , H01J2237/2441 , H01J2237/2446 , H01J2237/2594 , H01J2237/2817
摘要： Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.

4. 发明授权

US08324726B2 Semiconductor device, electrode member and electrode member fabrication method 有权
标题翻译：半导体器件，电极部件和电极部件的制造方法
公开(公告)号：US08324726B2
公开(公告)日：2012-12-04
申请号：US11351338
申请日：2006-02-10
申请人： Katsuya Okumura , Yoshikazu Takahashi , Kazunori Takenouchi
发明人： Katsuya Okumura , Yoshikazu Takahashi , Kazunori Takenouchi
IPC分类号： H01L23/34
CPC分类号： H01L23/49811 , H01L23/49827 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L25/0655 , H01L25/072 , H01L2224/37147 , H01L2224/40095 , H01L2224/40139 , H01L2224/40225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/351 , H05K1/115 , H01L2924/00 , H01L2924/00015 , H01L2224/05599
摘要： A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.
摘要翻译：一种改善功率模块的热循环电阻和功率循环电阻的半导体器件。在由陶瓷材料制成的支撑体上切割的多个穿孔中形成铜柱的电极部件被焊接到形成有发射极的IGBT的一侧。通过将铜柱焊接到电极上，在IGBT中产生的热量转移到电极部件并被辐射。此外，即使制造IGBT的材料和铜的热膨胀性不同，焊接界面上的应力降低，并且变形减小。这样可以抑制裂纹的出现。结果，可以提高功率模块的耐热循环电阻和功率循环电阻。

5. 发明授权

US08283755B2 Multichip semiconductor device, chip therefor and method of formation thereof 有权
标题翻译：多芯片半导体器件，芯片及其形成方法
公开(公告)号：US08283755B2
公开(公告)日：2012-10-09
申请号：US13067180
申请日：2011-05-13
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L29/40
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
摘要翻译：公开了一种多芯片半导体器件，其中堆叠芯片，每个芯片包括形成在顶部的半导体衬底和电路部件，以及形成在半导体衬底的顶部上的层间绝缘膜。至少一个芯片具有穿过半导体衬底和层间绝缘膜的通孔中形成的金属的连接插头。具有连接插头的芯片通过该连接插头与另一个芯片电连接。

6. 发明授权

US08247289B2 Capacitor and manufacturing method thereof 有权
标题翻译：电容器及其制造方法
公开(公告)号：US08247289B2
公开(公告)日：2012-08-21
申请号：US11508141
申请日：2006-08-23
申请人： Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kinji Yamada , Tomotaka Shinoda , Katsuya Okumura , Shuichi Kawano
发明人： Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kinji Yamada , Tomotaka Shinoda , Katsuya Okumura , Shuichi Kawano
IPC分类号： H01L21/8242 , H01L21/20 , H01L21/00
CPC分类号： H01L23/50 , H01G4/228 , H01G4/33 , H01L23/481 , H01L24/81 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01056 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/30105 , H05K1/162 , H05K3/002 , H05K2201/09509 , H05K2201/096 , H05K2201/10378
摘要： A capacitor having a high quality and a manufacturing method of the same are provided.A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.
摘要翻译：提供了具有高质量的电容器及其制造方法。电容器具有形成在氧化膜上的下电极，形成在下电极上的电介质层，形成为与电极之间介电层相对的下电极的上电极和形成为覆盖上电极的上电极，上电极的开口部分和电介质层的开口部分。通过在电介质层上形成上电极，可以通过使用上电极作为掩模对电介质层进行图案化，并且通过防止杂质扩散到电介质层中来提供具有高质量电介质层的电容器。通过在电介质层上形成上部电极，可以防止电介质层暴露于蚀刻液体，液体显影剂等

7. 发明授权

US08174093B2 Multichip semiconductor device, chip therefor and method of formation thereof 有权
公开(公告)号：US08174093B2
公开(公告)日：2012-05-08
申请号：US12926104
申请日：2010-10-26
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L29/40
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

8. 发明申请

US20120024318A1 RETICLE CHUCK CLEANER 有权
公开(公告)号：US20120024318A1
公开(公告)日：2012-02-02
申请号：US13192694
申请日：2011-07-28
申请人： Masamitsu ITOH , Katsuya Okumura , Taro Inada , Jun Watanabe
发明人： Masamitsu ITOH , Katsuya Okumura , Taro Inada , Jun Watanabe
IPC分类号： B08B7/00 , B05D5/06 , B05D5/12 , B05D5/10
CPC分类号： B08B7/0028 , B05D3/0254 , B05D5/00 , G03F7/707 , G03F7/70925 , Y10T428/28 , Y10T428/2848
摘要： According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.
摘要翻译：根据一个实施例，用于清洁EUV曝光装置的光罩卡盘的掩模版卡盘清洁器包括具有要携带到EUV曝光装置的掩模版卡盘的形状的基板，以及形成在其中一个主表面上的粘合剂基质。

9. 发明申请

US20110215443A1 Multichip semiconductor device, chip therefor and method of formation thereof 有权
公开(公告)号：US20110215443A1
公开(公告)日：2011-09-08
申请号：US13067180
申请日：2011-05-13
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L29/41
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.

10. 发明申请

US20110101522A1 Multichip semiconductor device, chip therefor and method of formation thereof 有权
标题翻译：多芯片半导体器件，芯片及其形成方法
公开(公告)号：US20110101522A1
公开(公告)日：2011-05-05
申请号：US12926104
申请日：2010-10-26
申请人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
发明人： Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
IPC分类号： H01L23/485
CPC分类号： H01L23/642 , H01L21/76898 , H01L23/367 , H01L23/481 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2225/06572 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/00
摘要： A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
摘要翻译：公开了一种多芯片半导体器件，其中堆叠芯片，每个芯片包括形成在顶部的半导体衬底和电路部件，以及形成在半导体衬底的顶部上的层间绝缘膜。至少一个芯片具有穿过半导体衬底和层间绝缘膜的通孔中形成的金属的连接插头。具有连接插头的芯片通过该连接插头与另一个芯片电连接。

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