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1. 发明授权

US08750029B2 Magnetoresistive effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US08750029B2
公开(公告)日：2014-06-10
申请号：US13233420
申请日：2011-09-15
申请人： Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda
发明人： Eiji Kitagawa , Tadaomi Daibou , Tadashi Kai , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Hiroaki Yoda
IPC分类号： G11C11/15 , H01L43/08
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.
摘要翻译：根据一个实施例，磁阻效应元件包括记录层，其包括对膜表面具有垂直磁各向异性的铁磁材料和磁化的可变取向，包括具有垂直磁性各向异性的铁磁材料的参考层和膜表面的不变取向磁化，记录层和参考层之间的非磁性层，与记录层和第一底层之间的第二底层与编码层的与设置非磁性层的一侧相反的一侧的第一底层。第二底层是包含浓度为3×1015atms / cm 2的Pd膜。

2. 发明授权

US08670268B2 Magnetoresistive element and magnetic memory using the same 有权
标题翻译：磁阻元件和使用其的磁存储器
公开(公告)号：US08670268B2
公开(公告)日：2014-03-11
申请号：US13427732
申请日：2012-03-22
申请人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
发明人： Toshihiko Nagase , Eiji Kitagawa , Katsuya Nishiyama , Tadashi Kai , Koji Ueda , Daisuke Watanabe
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01L43/02 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes first and second magnetic layers and a first nonmagnetic layer. The first magnetic layer has an axis of easy magnetization perpendicular to a film plane, and a variable magnetization. The second magnetic layer has an axis of easy magnetization perpendicular to a film plane, and an invariable magnetization. The first nonmagnetic layer is provided between the first and second magnetic layers. The second magnetic layer includes third and fourth magnetic layers, and a second nonmagnetic layer formed between the third and fourth magnetic layers. The third magnetic layer is in contact with the first nonmagnetic layer and includes Co and at least one of Zr, Nb, Mo, Hf, Ta, and W.
摘要翻译：根据一个实施例，磁阻元件包括第一和第二磁性层和第一非磁性层。第一磁性层具有垂直于膜平面的容易磁化的轴和可变磁化。第二磁性层具有垂直于膜平面的容易磁化的轴和不变的磁化。第一非磁性层设置在第一和第二磁性层之间。第二磁性层包括第三和第四磁性层，以及形成在第三和第四磁性层之间的第二非磁性层。第三磁性层与第一非磁性层接触，包括Co和Zr，Nb，Mo，Hf，Ta和W中的至少一种。

3. 发明授权

US08208292B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08208292B2
公开(公告)日：2012-06-26
申请号：US13342324
申请日：2012-01-03
申请人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Tadashi Kai , Katsuya Nishiyama , Toshihiko Nagase , Masatoshi Yoshikawa , Eiji Kitagawa , Tadaomi Daibou , Makoto Nagamine , Masahiko Nakayama , Naoharu Shimomura , Hiroaki Yoda , Kei Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228 , Y10S977/935
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括具有可变磁化的第一磁性层和在垂直于膜表面的垂直方向上的易轴，具有不变磁化的第二磁性层和垂直方向上的易轴，以及在第一和第二磁性层之间的第一非磁性层。第一磁性层包括铁磁材料，其包括Co和Pd或Co和Pt交替层压在原子紧密堆积的平面上的合金。第一磁性层具有指向垂直方向的C轴。并且通过流过第一磁性层，第一非磁性层和第二磁性层的电流改变第一磁性层的磁化方向。

4. 发明申请

US20120069640A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120069640A1
公开(公告)日：2012-03-22
申请号：US13232782
申请日：2011-09-14
申请人： Toshihiko Nagase , Tadashi Kai , Makoto Nagamine , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
发明人： Toshihiko Nagase , Tadashi Kai , Makoto Nagamine , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Koji Ueda , Hiroaki Yoda , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Taro Nagahama , Akio Fukushima , Koji Ando
IPC分类号： G11C11/16
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first and second magnetic layers having an easy axis of magnetization in a direction perpendicular to a film plane; and a first nonmagnetic layer interposed between the first and second magnetic layers, at least one of the first and second magnetic layers including a structure formed by stacking a first and second magnetic films, the second magnetic film being located closer to the first nonmagnetic layer, the second magnetic film including a structure formed by repeating stacking of a magnetic material layer and a nonmagnetic material layer at least twice, the nonmagnetic material layers of the second magnetic film containing at least one element selected from the group consisting of Ta, W, Hf, Zr, Nb, Mo, Ti, V, and Cr, one of the first and second magnetic layers having a magnetization direction that is changed by applying a current.
摘要翻译：根据实施例的磁阻元件包括：在垂直于膜平面的方向上具有易磁化轴的第一和第二磁性层; 以及介于所述第一和第二磁性层之间的第一非磁性层，所述第一和第二磁性层中的至少一个包括通过堆叠第一和第二磁性膜形成的结构，所述第二磁性膜位于更靠近所述第一非磁性层的位置，所述第二磁性膜包括通过将磁性材料层和非磁性材料层重复堆叠至少两次形成的结构，所述第二磁性膜的非磁性材料层含有选自Ta，W，Hf中的至少一种元素，Zr，Nb，Mo，Ti，V和Cr中的一种，所述第一和第二磁性层之一具有通过施加电流而改变的磁化方向。

5. 发明申请

US20110116305A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20110116305A1
公开(公告)日：2011-05-19
申请号：US13013141
申请日：2011-01-25
申请人： Makoto NAGAMINE , Toshihiko Nagase , Sumio Ikegawa , Katsuya Nishiyama , Masatoshi Yoshikawa
发明人： Makoto NAGAMINE , Toshihiko Nagase , Sumio Ikegawa , Katsuya Nishiyama , Masatoshi Yoshikawa
IPC分类号： G11C11/15 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/228
摘要： A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.
摘要翻译：磁阻元件包括第一磁性层，其包括第一表面和第二表面，并且具有第一标准电极电位，第二磁性层，设置在第二磁性层和第一磁性层的第一表面之间的阻挡层以及非磁性覆盖层，其与所述第一磁性层的第二表面接触并且由第一金属材料和第二金属材料的合金形成，所述第一金属材料具有低于所述第一标准电极电位的第二标准电极电位所述第二金属材料具有比所述第一标准电极电位高的第三标准电极电位。

6. 发明申请

US20090225587A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20090225587A1
公开(公告)日：2009-09-10
申请号：US12470786
申请日：2009-05-22
申请人： Makoto Nagamine , Toshihiko Nagase , Sumio Ikegawa , Katsuya Nishiyama , Masatoshi Yoshikawa
发明人： Makoto Nagamine , Toshihiko Nagase , Sumio Ikegawa , Katsuya Nishiyama , Masatoshi Yoshikawa
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/224 , H01L27/228
摘要： A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.
摘要翻译：磁阻元件包括第一磁性层，其包括第一表面和第二表面，并且具有第一标准电极电位，第二磁性层，设置在第二磁性层和第一磁性层的第一表面之间的阻挡层以及非磁性覆盖层，其与所述第一磁性层的第二表面接触并且由第一金属材料和第二金属材料的合金形成，所述第一金属材料具有低于所述第一标准电极电位的第二标准电极电位所述第二金属材料具有比所述第一标准电极电位高的第三标准电极电位。

7. 发明授权

US08686521B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08686521B2
公开(公告)日：2014-04-01
申请号：US12716582
申请日：2010-03-03
申请人： Tadaomi Daibou , Toshihiko Nagase , Eiji Kitagawa , Masatoshi Yoshikawa , Katsuya Nishiyama , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
发明人： Tadaomi Daibou , Toshihiko Nagase , Eiji Kitagawa , Masatoshi Yoshikawa , Katsuya Nishiyama , Makoto Nagamine , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1673 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.
摘要翻译：磁阻元件包括稳定层，非磁性层，设置在稳定层和非磁性层之间的自旋极化层，垂直方向具有磁各向异性的自旋极化层，以及设置在非磁性层与设置有自旋极化层的一侧相反。稳定层的面内方向的晶格常数小于自旋极化层的晶格常数。自旋极化层含有选自钴（Co）和铁（Fe）中的至少一种元素，具有体心四方晶（BCT）结构，晶格常数比c / a为1.10（含）为1.35（含），当垂直方向为c轴且面内方向为a轴时。

8. 发明授权

US08669628B2 Magnetoresistive element and magnetic memory using the same 有权
标题翻译：磁阻元件和使用其的磁存储器
公开(公告)号：US08669628B2
公开(公告)日：2014-03-11
申请号：US13424072
申请日：2012-03-19
申请人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
发明人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括以下构造。第一非磁性层设置在第一磁性层（存储层）和第二磁性层（参考层）之间。第三磁性层形成在存储层的与形成有第一非磁性层的表面相反的表面上。第四磁性层形成在与形成第一非磁性层的表面相反的参考层的表面上。第三和第四磁性层具有与存储层的磁化反平行的磁化。第二非磁性层位于存储和第三磁性层之间。第三非磁性层位于参考和第四磁性层之间。第四磁性层的厚度小于第三磁性层的厚度。

9. 发明授权

US08659103B2 Magnetoresistive element and magnetic memory using the same 有权
标题翻译：磁阻元件和使用其的磁存储器
公开(公告)号：US08659103B2
公开(公告)日：2014-02-25
申请号：US13424136
申请日：2012-03-19
申请人： Daisuke Watanabe , Katsuya Nishiyama , Toshihiko Nagase , Koji Ueda , Tadashi Kai
发明人： Daisuke Watanabe , Katsuya Nishiyama , Toshihiko Nagase , Koji Ueda , Tadashi Kai
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L27/228 , H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable magnetization. A nonmagnetic layer is provided between the first and the second magnetic layers. The first magnetic layer has a structure in which first, second and third magnetic material films and a nonmagnetic material film are stacked. The first magnetic material film is provided in contact with the nonmagnetic layer, the nonmagnetic material film is provided in contact with the first magnetic material film, the second magnetic material film is provided in contact with the nonmagnetic material film, and the third magnetic material film is provided in contact with the second magnetic material film. The second magnetic material film has a Co concentration higher than that of the first magnetic material film.
摘要翻译：根据一个实施例，磁阻元件包括以下构造。第一磁性层具有不变的磁化。第二磁性层具有可变磁化强度。在第一和第二磁性层之间提供非磁性层。第一磁性层具有堆叠第一，第二和第三磁性材料膜和非磁性材料膜的结构。第一磁性材料膜设置成与非磁性层接触，非磁性材料膜设置成与第一磁性材料膜接触，第二磁性材料膜设置成与非磁性材料膜接触，并且第三磁性材料膜设置成与第二磁性材料膜接触。第二磁性材料膜的Co浓度高于第一磁性材料膜。

10. 发明申请

US20130020659A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20130020659A1
公开(公告)日：2013-01-24
申请号：US13628724
申请日：2012-09-27
申请人： Tadaomi Daibou , Eiji Kitagawa , Yutaka Hashimoto , Masaru Tokou , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Makoto Nagamine , Tadashi Kai , Hiroaki Yoda
发明人： Tadaomi Daibou , Eiji Kitagawa , Yutaka Hashimoto , Masaru Tokou , Toshihiko Nagase , Katsuya Nishiyama , Koji Ueda , Makoto Nagamine , Tadashi Kai , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L27/228 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film.
摘要翻译：根据实施例的磁致电阻元件包括：在垂直于膜平面的方向上具有容易磁化的轴的第一铁磁层; 第二铁磁层，其在垂直于膜平面的方向上具有容易磁化的轴; 放置在第一铁磁层和第二铁磁层之间的非磁性层; 置于第一铁磁层和非磁性层之间的第一界面磁性层; 以及置于第二铁磁层和非磁性层之间的第二界面磁性层。第一界面磁性层包括第一界面磁性膜，位于第一界面磁性膜和非磁性层之间并具有与第一界面磁性膜不同的组成的第二界面磁性膜，以及位于第一界面磁性膜之间的第一非磁性膜第一界面磁性膜和第二界面磁性膜。

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