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    • 10. 发明授权
    • Balls of single crystal silicon and method of making the same
    • 单晶硅球及其制造方法
    • US06596395B1
    • 2003-07-22
    • US09618559
    • 2000-07-18
    • Katsutoshi Muramatsu
    • Katsutoshi Muramatsu
    • B32B516
    • B24B37/025Y10T428/2982Y10T428/2996Y10T428/31663
    • Silicon balls of single crystal silicon for use in semiconductir circuit substrates or the like, which have been lapped to satisfy necessary requirements and a method of making the same. The silicon ball of single crystal silicon is a lapped ball of single crystal silicon having a sphericity of not greater than 0.08 &mgr;m and also having a residue stress layer of not greater than 5 &mgr;m in a depth from a processing surface thereof on one side in negative and positive directions. The method of making the silicon balls makes use of a pair of lapping tables 2 and 3 supported in face-to-face relation with each other. One or both of the lapping tables 2 and 3 is prepared from finely divided abrasive particles hardened by the use of a resinous bonding material. Workpieces W of single crystal silicon are sandwiched between the lapping tables 2 and 3 and are lapped to provide the lapped balls.
    • 已经被研磨以满足必要要求的用于半导体电路基板等的单晶硅硅球及其制造方法。 单晶硅硅球是具有不大于0.08μm的球形度的单晶硅的重叠球,并且在其一侧的处理表面的深度上还具有不大于5μm的残余应力层 和积极的方向。 制造硅球的方法使用以彼此面对面的关系支撑的一对研磨台2,3。 研磨台2和3中的一个或两个由通过使用树脂粘合材料硬化的细碎磨料颗粒制备。 单晶硅的工件W夹在研磨台2和3之间,并且被研磨以提供重叠的球。