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1. 发明授权

US5545258A Microwave plasma processing system 失效
标题翻译：微波等离子体处理系统
公开(公告)号：US5545258A
公开(公告)日：1996-08-13
申请号：US490088
申请日：1995-06-13
申请人： Katsuo Katayama , Kyoichi Komachi , Hiroshi Mabuchi , Takeshi Akimoto
发明人： Katsuo Katayama , Kyoichi Komachi , Hiroshi Mabuchi , Takeshi Akimoto
IPC分类号： H01J37/32 , C23C16/00
CPC分类号： H01J37/3244 , H01J37/32192 , H01J37/32266
摘要： A microwave plasma processing system, wherein a conductor disposed for controlling the anisotropy and the acceleration energy of ions in a plasma has inside a flow path for reactant gasses and a plurality of holes through which the gasses are to be blown toward a sample holder.A microwave plasma processing system, wherein the ratio of the total area of microwave transmission holes to the area of a conductor is set to be in a range of 0.25 to 0.65.A microwave plasma processing system, wherein each microwave transmission hole formed in a conductor has a dimension in the microwave traveling direction greater than that in a direction perpendicular to the traveling direction.
摘要翻译：一种微波等离子体处理系统，其中设置用于控制等离子体中的离子的各向异性和加速能的导体内部具有用于反应物气体的流路和多个孔，气体将通过该孔流向样品保持器。微波等离子体处理系统，其中微波透射孔的总面积与导体的面积的比率设定在0.25〜0.65的范围内。微波等离子体处理系统，其中形成在导体中的每个微波传输孔的微波行进方向上的尺寸大于与行进方向垂直的方向上的尺寸。

2. 发明授权

US5529632A Microwave plasma processing system 失效
标题翻译：微波等离子体处理系统
公开(公告)号：US5529632A
公开(公告)日：1996-06-25
申请号：US490087
申请日：1995-06-13
申请人： Katsuo Katayama , Kyoichi Komachi , Hiroshi Mabuchi , Takeshi Akimoto
发明人： Katsuo Katayama , Kyoichi Komachi , Hiroshi Mabuchi , Takeshi Akimoto
IPC分类号： H05H1/46 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/32504 , Y10S156/916
摘要： A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and an adhesion preventing member in which a cylinder disposed so as to be in contact with the inner face of a wall of the reaction chamber and a microwave reflecting plate having a gas discharge hole are integrally formed.A microwave plasma processing system has heating means for heating the wall of a reaction chamber, and a microwave reflecting plate which is attached to the inner face of a wall of the reaction chamber and which has a gas discharge hole.
摘要翻译：微波等离子体处理系统具有用于加热反应室的壁的加热装置和其中设置成与反应室的壁的内表面接触的圆筒和具有微波反射板的微波反射板的防粘接构件，气体排出孔一体形成。微波等离子体处理系统具有用于加热反应室的壁的加热装置和附接到反应室的壁的内表面并具有气体排出孔的微波反射板。

3. 发明授权

US5788798A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5788798A
公开(公告)日：1998-08-04
申请号：US605216
申请日：1996-05-31
申请人： Hiroshi Mabuchi , Takahiro Yoshiki , Naoki Matsumoto , Kyoichi Komachi , Shuta Kanayama , Toshiki Ebata
发明人： Hiroshi Mabuchi , Takahiro Yoshiki , Naoki Matsumoto , Kyoichi Komachi , Shuta Kanayama , Toshiki Ebata
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/32211 , H01J37/32192 , H01J37/32229 , H01J37/32238
摘要： A plasma processing apparatus carries out plasma processings such as etching, ashing and CVD on large substrates such as semiconductor device substrates and glass substrates for liquid crystal display panels, etc. The plasma processing apparatus having microwave generator 26, a microwave guide path 23, a microwave window 4 and a reaction room 2, etc., has a dielectric sheet 21 disposed to confront the microwave window 4 through a hollow area 20. The dielectric sheet is divided into multiple dielectric sheets 21a, 21b, and the microwave guide path 23a, 23b are connected to the divided dielectric sheets 21a, 21b. This simple structure enables the stable and uniform plasma processing on large substrates such as glass substrates for liquid crystal display panels.
摘要翻译： PCT No.PCT / JP95 / 01403 Sec。 371日期：1996年5月31日 102（e）日期1996年5月31日PCT提交1995年7月13日PCT公布。第WO96 / 03019号公报日期1996年2月1日等离子体处理装置在诸如半导体器件基板和用于液晶显示面板的玻璃基板等大型基板上进行蚀刻，灰化和CVD等等离子体处理。具有微波发生器26，微波引导路径23，微波窗4和反应室2等具有设置成通过中空区域20面对微波窗口4的电介质片21.电介质片被分成多个电介质片21a，21b，微波引导路径23a，23b连接到分隔电介质片21a，21b。这种简单的结构能够在诸如液晶显示面板的玻璃基板等大基板上进行稳定均匀的等离子体处理。

4. 发明授权

US5645644A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5645644A
公开(公告)日：1997-07-08
申请号：US546342
申请日：1995-10-20
申请人： Hiroshi Mabuchi , Takahiro Yoshiki , Kyoichi Komachi , Tadashi Miyamura
发明人： Hiroshi Mabuchi , Takahiro Yoshiki , Kyoichi Komachi , Tadashi Miyamura
IPC分类号： H01J37/32 , C23C16/00
CPC分类号： H01J37/32238 , H01J37/32192
摘要： A plasma processing apparatus comprises means of supplying the microwave, a reaction chamber having a microwave lead-in opening, a microwave window for introducing the microwave provided by the microwave supply means into the reaction chamber through the microwave lead-in opening, and a supporting member having beams for supporting the microwave window. The apparatus has its microwave window divided in correspondence to areas of the supporting member divided by the beams. The apparatus can have a larger microwave window which is reinforced by the beams against the pressure at plasma generation, and is capable of processing large semiconductor substrates and glass substrates for liquid crystal display panels stably and uniformly.
摘要翻译：一种等离子体处理装置，包括供给微波的装置，具有微波引入开口的反应室，通过微波引入开口将由微波供给装置提供的微波引入反应室的微波窗口，以及支撑具有用于支撑微波窗口的光束的构件。该装置的微波窗口对应于由梁分割的支撑构件的区域。该装置可以具有较大的微波窗口，该玻璃窗通过光束抵抗等离子体产生的压力而增强，并且能够稳定和均匀地处理大型半导体衬底和用于液晶显示面板的玻璃基板。

5. 发明授权

US5951887A Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US5951887A
公开(公告)日：1999-09-14
申请号：US952782
申请日：1997-11-26
申请人： Hiroshi Mabuchi , Toshihiro Hayami , Hideo Ida , Tomomi Murakami , Naohiko Takeda , Junya Tsuyuguchi , Katsuo Katayama
发明人： Hiroshi Mabuchi , Toshihiro Hayami , Hideo Ida , Tomomi Murakami , Naohiko Takeda , Junya Tsuyuguchi , Katsuo Katayama
IPC分类号： B05D7/24 , C23C16/44 , C23C16/511 , H01J37/32 , B23K10/00
CPC分类号： B05D1/62 , C23C16/4401 , C23C16/511 , H01J37/32192 , H01J37/32238 , H01J2237/022
摘要： A plasma processing apparatus and plasma processing method are provided to be used for etching, ashing, CVD, etc. in the manufacturing, etc. of large-scale integrated circuits (LSIs) and liquid crystal display panels (LCDs). The plasma processing apparatus generates plasma by using a microwave introduced through a microwave window, while controlling the ions in the plasma by varying the RF voltage applied to the sample stage. The apparatus is characterized to include a counter electrode (grounded electrode) which is located at the rim section of the microwave window against the sample stage. The plasma processing method implements a plasma process for a sample with the plasma processing apparatus. The method and apparatus are capable of alleviating the sticking of particles to the sample and metallic contamination, and also capable of improving the yield of semiconductor devices, etc.
摘要翻译： PCT No.PCT / JP97 / 01070 Sec。 371日期：1997年11月26日 102（e）日期1997年11月26日PCT 1997年3月27日PCT公布。公开号WO97 / 36461 日期1997年10月2日提供了一种等离子体处理装置和等离子体处理方法，用于大规模集成电路（LSI）和液晶显示面板（LCD）的制造等中的蚀刻，灰化，CVD等。。等离子体处理装置通过使用通过微波窗口引入的微波产生等离子体，同时通过改变施加到样品台的RF电压来控制等离子体中的离子。该装置的特征在于包括相对电极（接地电极），其位于微波窗口的边缘部分处抵靠样品台。等离子体处理方法利用等离子体处理装置对样品进行等离子体处理。该方法和装置能够减轻颗粒对样品的粘附和金属污染，并且还能够提高半导体器件的产量等。

6. 发明授权

US6091045A Plasma processing apparatus utilizing a microwave window having a thinner inner area 失效
标题翻译：利用具有较薄内部区域的微波窗口的等离子体处理装置
公开(公告)号：US6091045A
公开(公告)日：2000-07-18
申请号：US952779
申请日：1997-11-26
申请人： Hiroshi Mabuchi , Junya Tsuyuguchi , Katsuo Katayama , Toshihiro Hayami , Hideo Ida , Tomomi Murakami , Naohiko Takeda
发明人： Hiroshi Mabuchi , Junya Tsuyuguchi , Katsuo Katayama , Toshihiro Hayami , Hideo Ida , Tomomi Murakami , Naohiko Takeda
IPC分类号： B05D7/24 , C23C16/44 , C23C16/511 , H01J37/32 , B23K10/00
CPC分类号： B05D1/62 , C23C16/4401 , C23C16/511 , H01J37/32192 , H01J37/32238 , H01J2237/022
摘要： A plasma processing apparatus and a plasma processing method used in etching, ashing, CVD, etc. in the manufacturing, etc. of large-scale integrated circuits (LSIs) and liquid crystal display panels (LCDs). The plasma processing apparatus includes a dielectric plate used for the passage of a microwave, a microwave window disposed to confront the dielectric plate, and a reaction chamber in which a sample stage is disposed to confront the microwave window. The apparatus is characterized in that the microwave window has a recess in the area confronting the sample stage. The plasma processing method is characterized by implementing a plasma process for a sample with the plasma processing apparatus. The method and apparatus are capable of raising the plasma density in the area confronting the sample, improving the plasma processing rate, improving the etch-through performance for fine hole patterns, and improving the yield of semiconductor devices.
摘要翻译： PCT No.PCT / JP97 / 01071 Sec。 371日期：1997年11月26日 102（e）日期1997年11月26日PCT 1997年3月27日PCT公布。公开号WO97 / 36462 日期1997年10月2日在大型集成电路（LSI）和液晶显示面板（LCD）的制造等中的蚀刻，灰化，CVD等中使用的等离子体处理装置和等离子体处理方法。等离子体处理装置包括用于微波通过的电介质板，设置为面对电介质板的微波窗口，以及反射室，其中设置样品台以面对微波窗口。该装置的特征在于，微波窗口在面向样品台的区域中具有凹槽。等离子体处理方法的特征在于用等离子体处理装置对样品进行等离子体处理。该方法和装置能够提高样品面积的等离子体密度，提高等离子体处理速度，提高细孔图案的蚀刻性能，提高半导体器件的成品率。

7. 发明授权

US6092486A Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US6092486A
公开(公告)日：2000-07-25
申请号：US13258
申请日：1998-01-26
申请人： Hiroshi Mabuchi , Toshihiro Hayami , Shigeki Honda
发明人： Hiroshi Mabuchi , Toshihiro Hayami , Shigeki Honda
IPC分类号： C23C16/511 , C23C16/00 , C23C14/00 , C23F1/02
CPC分类号： H01J37/32467 , C23C16/511 , H01J37/32192 , H01J37/32477 , H01J37/32522
摘要： The plasma processing apparatus and plasma processing method of the present invention are suitable for the application of plasma processing to etching, ashing, CVD, etc. in the manufacturing of large scale integrated circuits (LSIs) and liquid crystal display panels (LCDs), and useful for the manufacturing of LSIs and LCDs. The apparatus is characterized in that the reaction chamber has its side wall separated into an inner side wall which faces to the interior of the reaction chamber and an outer side wall which faces to the exterior of the reaction chamber, with the inner side wall being isolated electrically from other portions of the reaction chamber and not grounded electrically. This structure improves the repeatability of plasma processing. The apparatus is also characterized in that the inner side wall of reaction chamber is isolated thermally from other portions of the reaction chamber and equipped with temperature control means. This structure improves the temperature control performance for the inner side wall and also improves the maintainability of the apparatus.
摘要翻译：本发明的等离子体处理装置和等离子体处理方法适用于制造大规模集成电路（LSI）和液晶显示面板（LCD）时的等离子体处理对蚀刻，灰化，CVD等的应用，对LSI和LCD的制造有用。该装置的特征在于，反应室的侧壁分成面向反应室内部的内侧壁和面向反应室外部的外侧壁，内侧壁被隔离与反应室的其它部分电连接，而不是电接地。这种结构提高了等离子体处理的重复性。该装置的特征还在于，反应室的内侧壁与反应室的其它部分热隔离并配备有温度控制装置。该结构提高了内侧壁的温度控制性能，并且还提高了装置的可维护性。

8. 发明授权

US06911468B2 Tyrosine phosphatase inhibitors 失效
标题翻译：酪氨酸磷酸酶抑制剂
公开(公告)号：US06911468B2
公开(公告)日：2005-06-28
申请号：US10276674
申请日：2001-05-21
申请人： Takahiro Matsumoto , Nozomi Katayama , Hiroshi Mabuchi
发明人： Takahiro Matsumoto , Nozomi Katayama , Hiroshi Mabuchi
IPC分类号： A61K31/402 , A61P3/10 , A61P43/00 , C07D207/32 , C07D207/333 , C07D209/12 , A61K31/40 , C07D207/30
CPC分类号： C07D207/333 , A61K31/402 , C07D209/12
摘要： A compound of the formula (I): wherein X1 and X2 are the same or different and each is a bond or a spacer having 1 to 20 atom(s) in the main chain; one of R1 and R2 is a cycle group having substituent(s) selected from 1) an optionally substituted carboxy-C1-6 alkoxy group and 2) an optionally substituted carboxy-C1-6 aliphatic hydrocarbon group, wherein the cycle group optionally has additional substituent(s), and the other is an optionally substituted cycle group or a hydrogen atom; and R3, R4 and R5 are the same or different and each is a hydrogen atom or a substituent, or R4 may link together with R3 or R5 to form an optionally substituted ring; provided that when R3 is a hydrogen atom, R4 is a hydrogen atom and R5 is methyl, X2—R2 is not 4-cyclohexylphenyl; when R3 is 4-methoxyphenyl, R4 is a hydrogen atom and R5 is methyl, X2—R2 is not 4-methoxyphenyl; and when R1 or R2 is a hydrogen atom, the adjacent X1 or X2 is not a C1-7 alkylene; or a salt thereof exhibits a protein tyrosine phosphatase inhibitory action and is useful as a prophylactic or therapeutic agent for diabetes or the like.
摘要翻译：式（I）的化合物：其中X 1和X 2 2相同或不同，并且各自为键或具有1至20个原子的间隔基，在主链上 R 1和R 2之一是具有选自以下的取代基的循环基团：1）任选取代的羧基-C 1-6亚烷基，烷氧基和2）任选取代的羧基-C 1-6脂肪族烃基，其中所述环状基团任选具有另外的取代基，另一个是任选取代的环状基团或氢原子 ; 和R 3，R 4和R 5相同或不同，各自为氢原子或取代基，或R 1，R 2， 4可以与R 3或R 5连接以形成任选取代的环; 条件是当R 3为氢原子时，R 4为氢原子，R 5为甲基，X 2为氢原子， N 2 -R 2不是4-环己基苯基; 当R 3是4-甲氧基苯基时，R 4是氢原子，R 5是甲基，X 2是 -R 2不是4-甲氧基苯基; 并且当R 1或R 2 2是氢原子时，相邻的X 1或X 2不是 C 1-7亚烷基; 或其盐表现出蛋白酪氨酸磷酸酶抑制作用，可用作糖尿病等的预防或治疗剂。

9. 发明授权

US06352982B1 4,1-benzoxazepines, their analogues, and their use as somatostatin agonists 失效
标题翻译： 4,1-苯并氧氮杂，它们的类似物，以及它们作为生长抑素激动剂的用途
公开(公告)号：US06352982B1
公开(公告)日：2002-03-05
申请号：US09403066
申请日：1999-10-14
申请人： Hiroshi Mabuchi , Nobuhiro Suzuki , Takashi Miki
发明人： Hiroshi Mabuchi , Nobuhiro Suzuki , Takashi Miki
IPC分类号： C07D26714
CPC分类号： C07D231/12 , C07D233/56 , C07D243/24 , C07D249/08 , C07D267/14 , C07D281/10 , C07D413/04 , C07D413/06 , C07D413/12 , C07D417/06 , C07D417/12
摘要： The present invention provides a compound of the formula: wherein ring A is an optionally substituted aromatic hydrocarbon ring or aromatic heterocyclic ring; ring B is an optionally substituted aromatic hydrocarbon ring or aromatic heterocyclic ring; Z is an optionally substituted cyclic group or linear hydrocarbon group; R1 is a hydrogen atom, an optionally substituted hydrocarbon group or heterocyclic ring; R2 is an optionally substituted amino group; D is a bond or an optionally substituted divalent hydrocarbon group; E is a bond, —CON(Ra)—, —N(Ra)CO—, —N(Rb)CON(Rc)—, —N(Rd)COO—, —N(Re)SO2—, —COO—, —N(Rf)—, —O—, —S— —SO—, —SO2—, (in which Ra, Rb, Rc, Rd, Re and Rf are respectively a hydrogen atom or an optionally substituted hydrocarbon group); G is a bond or an optionally divalent substituted hydrocarbon group; L is a divalent group; ring B may form an optionally substituted non-aromatic condensed nitrogen-containing heterocyclic ring by combining with R2; X is two hydrogen atoms, an oxygen atom or a sulfur atom; is a single bond or a double bond, and Y is a nitrogen atom when is a double bond, or an oxygen atom, —N(R4)— (in which R4 is a hydrogen atom, an optionally substituted hydrocarbon group or an acyl group) or S(O)n (in which n is 0, 1 or 2) when is a single bond, or a salt thereof, which have somatostatin receptor agonistic action.
摘要翻译：本发明提供下式的化合物：其中环A是任选取代的芳族烃环或芳族杂环; 环B是任选取代的芳族烃环或芳族杂环; Z是任选取代的环状基团或直链烃基; R1是氢原子，任选取代的烃基或杂环; R2是任选取代的氨基; D是键或任选取代的二价烃基; E是键，-CON（Ra） - ， - N（Ra）CO-，-N（Rb）CON（Rc） - ， - N（Rd）COO-，-N（Re）SO2-，-COO- ，-N（R f） - ， - O - ， - S - -SO - ， - SO 2 - （其中Ra，Rb，Rc，Rd，Re和Rf分别为氢原子或任选取代的烃基）。 G是键或任选的二价取代的烃基; L是二价基团;环B可以与R2结合形成任选取代的非芳族稠合含氮杂环; X是两个氢原子，一个氧原子或一个硫原子; 是单键或双键，当是双键或氧原子-N（R4） - （其中R4是氢原子，任选取代的烃基或酰基））或S（O）n（其中n为0,1或2），当是单键时，或其盐，其具有生长抑素受体激动作用。

10. 发明申请

US20100234481A1 POROUS CERAMICS MANUFACTURING METHOD 审中-公开
标题翻译：多孔陶瓷制造方法
公开(公告)号：US20100234481A1
公开(公告)日：2010-09-16
申请号：US12721782
申请日：2010-03-11
申请人： Masaki SUGIMOTO , Masahito YOSHIKAWA , Akinori TAKEYAMA , Ken'ichiro KITA , Masaki NARISAWA , Hiroshi Mabuchi
发明人： Masaki SUGIMOTO , Masahito YOSHIKAWA , Akinori TAKEYAMA , Ken'ichiro KITA , Masaki NARISAWA , Hiroshi Mabuchi
IPC分类号： B05D3/06 , C08J9/00
CPC分类号： C04B41/5059 , B01D53/228 , B01D67/0067 , B01D71/02 , B01D2323/30 , B01D2323/34 , C04B35/571 , C04B35/62281 , C04B35/6269 , C04B41/009 , C04B41/87 , C04B2111/00801 , C04B2235/661 , C04B41/0045 , C04B41/4535 , C04B41/4554 , C04B35/10 , C04B35/00 , C04B38/00
摘要： A method of manufacturing porous ceramics, for example, thin film used for gas separation is disclosed. In this method, a silicon based mixture polymeric material which is the ceramics precursor is applied on a ceramics substrate, crosslinked by using ionizing radiation under oxygen free conditions; and pyrolyzed under an inert gas after that.
摘要翻译：公开了一种制造多孔陶瓷的方法，例如用于气体分离的薄膜。在该方法中，将陶瓷前体的基于硅的混合物聚合材料涂覆在陶瓷基板上，在无氧条件下通过电离辐射进行交联; 并在惰性气体之后热解。

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