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1. 发明授权

US09000601B2 Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：US09000601B2
公开(公告)日：2015-04-07
申请号：US13533273
申请日：2012-06-26
申请人： Katsunori Azuma , Kentaro Yasuda , Takahiro Fujita , Katsuaki Saito , Yoshihiko Koike , Michiaki Hiyoshi
发明人： Katsunori Azuma , Kentaro Yasuda , Takahiro Fujita , Katsuaki Saito , Yoshihiko Koike , Michiaki Hiyoshi
IPC分类号： H01L23/522 , H01L25/07
CPC分类号： H01L25/072 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/45124 , H01L2224/45147 , H01L2224/48137 , H01L2224/48139 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/49505 , H01L2924/00014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/30107 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity and the parasitic inductance of each semiconductor switching element.
摘要翻译：分别安装在多个绝缘板上的诸如IGBT的半导体开关元件的各个主电极经由导体构件彼此电连接。这种结构使得可以抑制由于每个半导体开关元件的结电容和寄生电感引起的谐振电压的发生。

2. 发明申请

US20130001805A1 POWER SEMICONDUCTOR MODULE 有权
标题翻译：功率半导体模块
公开(公告)号：US20130001805A1
公开(公告)日：2013-01-03
申请号：US13533273
申请日：2012-06-26
申请人： Katsunori AZUMA , Kentaro Yasuda , Takahiro Fujita , Katsuaki Saito , Yoshihiko Koike , Michiaki Hiyoshi
发明人： Katsunori AZUMA , Kentaro Yasuda , Takahiro Fujita , Katsuaki Saito , Yoshihiko Koike , Michiaki Hiyoshi
IPC分类号： H01L23/522
CPC分类号： H01L25/072 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/45124 , H01L2224/45147 , H01L2224/48137 , H01L2224/48139 , H01L2224/49111 , H01L2224/49113 , H01L2224/49175 , H01L2224/49505 , H01L2924/00014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/30107 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity and the parasitic inductance of each semiconductor switching element.
摘要翻译：分别安装在多个绝缘板上的诸如IGBT的半导体开关元件的各主电极通过导体构件彼此电连接。这种结构使得可以抑制由于每个半导体开关元件的结电容和寄生电感引起的谐振电压的发生。

3. 发明申请

US20100327654A1 Power Module and Vehicle-Mounted Inverter Using the Same 有权
标题翻译：功率模块和使用其的车载变频器
公开(公告)号：US20100327654A1
公开(公告)日：2010-12-30
申请号：US12826409
申请日：2010-06-29
申请人： Katsunori AZUMA , Mutsuhiro Mori , Michiaki Hiyoshi , Seiichi Hayakawa , Koji Sasaki , Isamu Yoshida
发明人： Katsunori AZUMA , Mutsuhiro Mori , Michiaki Hiyoshi , Seiichi Hayakawa , Koji Sasaki , Isamu Yoshida
IPC分类号： B60L1/00
CPC分类号： B60L11/04 , B60L2200/26 , H01L24/28 , H01L24/29 , H01L24/48 , H01L25/072 , H01L25/16 , H01L2224/48091 , H01L2224/4847 , H01L2924/00014 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/30107 , H01L2924/3025 , H02M7/003 , H03K17/08148 , H03K2017/0806 , H05K7/1432 , Y02T10/70 , Y02T10/7077 , Y10T307/74 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power module includes an upper arm circuit unit and a lower arm circuit unit each having a power semiconductor element; an insulating substrate with the units mounted on one surface thereof; a metal base bonded onto the other surface of the substrate opposite to the one surface where the units are mounted; a first connection conductor for supplying a high potential to the upper unit from outside; a second connection conductor for supplying a low potential to the lower unit from outside; an insulating sheet interposed between the conductors; and a resin case disposed on the metal base to support the conductors, the conductors are flat conductors and laminated with the sheet sandwiched therebetween; the sheet extends from one end of the laminated structure to secure the creepage distance between the conductors; and the case is furnished with a recess for containing the laminated structure.
摘要翻译：功率模块包括上臂电路单元和下臂电路单元，每个具有功率半导体元件; 绝缘基板，其单元安装在其一个表面上; 金属底座粘合到与安装单元的一个表面相对的基板的另一个表面上; 用于从外部向上部单元提供高电位的第一连接导体; 用于从外部向下部单元提供低电位的第二连接导体; 插入在导体之间的绝缘片; 以及设置在金属基座上以支撑导体的树脂壳体，导体是扁平导体，并且夹在其间的片材层压; 片材从层压结构的一端延伸，以确保导体之间的爬电距离; 并且壳体设置有用于容纳层压结构的凹部。

4. 外观设计

USD598846S1 Portion of power module for power inverter 有权
标题翻译：电力变频器电源模块部分
公开(公告)号：USD598846S1
公开(公告)日：2009-08-25
申请号：US29311339
申请日：2009-02-26
申请人： Toshiya Satoh , Ryuichi Saito , Toshiki Kurosu , Michiaki Hiyoshi , Kinya Nakatsu , Katsunori Azuma
设计人： Toshiya Satoh , Ryuichi Saito , Toshiki Kurosu , Michiaki Hiyoshi , Kinya Nakatsu , Katsunori Azuma

5. 发明授权

US08519561B2 Power module and vehicle-mounted inverter using the same 有权
标题翻译：电源模块和车载逆变器使用相同
公开(公告)号：US08519561B2
公开(公告)日：2013-08-27
申请号：US12826409
申请日：2010-06-29
申请人： Katsunori Azuma , Mutsuhiro Mori , Michiaki Hiyoshi , Seiichi Hayakawa , Koji Sasaki , Isamu Yoshida
发明人： Katsunori Azuma , Mutsuhiro Mori , Michiaki Hiyoshi , Seiichi Hayakawa , Koji Sasaki , Isamu Yoshida
IPC分类号： B60R16/03
CPC分类号： B60L11/04 , B60L2200/26 , H01L24/28 , H01L24/29 , H01L24/48 , H01L25/072 , H01L25/16 , H01L2224/48091 , H01L2224/4847 , H01L2924/00014 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19041 , H01L2924/30107 , H01L2924/3025 , H02M7/003 , H03K17/08148 , H03K2017/0806 , H05K7/1432 , Y02T10/70 , Y02T10/7077 , Y10T307/74 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A power module includes an upper arm circuit unit and a lower arm circuit unit each having a power semiconductor element; an insulating substrate with the units mounted on one surface thereof; a metal base bonded onto the other surface of the substrate opposite to the one surface where the units are mounted; a first connection conductor for supplying a high potential to the upper unit from outside; a second connection conductor for supplying a low potential to the lower unit from outside; an insulating sheet interposed between the conductors; and a resin case disposed on the metal base to support the conductors, the conductors are flat conductors and laminated with the sheet sandwiched therebetween; the sheet extends from one end of the laminated structure to secure the creepage distance between the conductors; and the case is furnished with a recess for containing the laminated structure.
摘要翻译：功率模块包括上臂电路单元和下臂电路单元，每个具有功率半导体元件; 绝缘基板，其单元安装在其一个表面上; 金属底座粘合到与安装单元的一个表面相对的基板的另一个表面上; 用于从外部向上部单元提供高电位的第一连接导体; 用于从外部向下部单元提供低电位的第二连接导体; 插入在导体之间的绝缘片; 以及设置在金属基座上以支撑导体的树脂壳体，导体是扁平导体，并且夹在其间的片材层压; 片材从层压结构的一端延伸，以确保导体之间的爬电距离; 并且壳体设置有用于容纳层压结构的凹部。

6. 发明授权

US08564953B2 Semiconductor power module, inverter/converter including the same, and method of manufacturing a cooling jacket for semiconductor power module 有权
标题翻译：半导体功率模块，包括该半导体功率模块的逆变器/转换器以及制造用于半导体功率模块的冷却套的方法
公开(公告)号：US08564953B2
公开(公告)日：2013-10-22
申请号：US13013987
申请日：2011-01-26
申请人： Keisuke Horiuchi , Michiaki Hiyoshi , Koji Sasaki
发明人： Keisuke Horiuchi , Michiaki Hiyoshi , Koji Sasaki
IPC分类号： H05K7/20
CPC分类号： H01L23/473 , F28F3/12 , H01L23/053 , H01L25/165 , H01L2924/0002 , H05K7/20927 , Y10T29/4998 , Y10T29/49989 , H01L2924/00
摘要： In order to achieve reduction in loss, a semiconductor power module comprises DC terminals to be connected to a condenser module and the semiconductor power module is used in combination with a cooling jacket for cooling, and the DC terminals protrude toward the condenser module beyond the cooling jacket.
摘要翻译：为了实现减少损耗，半导体功率模块包括要连接到电容器模块的DC端子，并且半导体功率模块与用于冷却的冷却套组合使用，并且DC端子朝着冷凝器模块突出超过冷却夹克。

7. 发明授权

US06297549B1 Hermetically sealed semiconductor power module and large scale module comprising the same 失效
标题翻译：密封的半导体功率模块和包括其的大型模块
公开(公告)号：US06297549B1
公开(公告)日：2001-10-02
申请号：US09311055
申请日：1999-05-14
申请人： Michiaki Hiyoshi
发明人： Michiaki Hiyoshi
IPC分类号： H01L2306
CPC分类号： H01L25/072 , H01L2224/45124 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48464 , H01L2224/49111 , H01L2224/73265 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： This is a semiconductor power module provided with: a ceramic substrate; a metallic plate bonded to a surface of this substrate; a cylindrical metallic flange which is hermetically bonded to a surface of substrate or the metallic plate; a ceramic housing for hermetically sealing an opening of the metallic flange; and at least one or more semiconductor chips soldered to the metallic plate. The metallic flange is made of metal with a low thermal expansion coefficient. A hermetically sealed container is created by welding the metallic flange, the ceramic substrate and the housing with silver brazing. Moreover, external collector, emitter and gate electrodes are bonded on the housing by using the silver brazing. The collector, emitter and gate conductive pillars are respectively connected to the external collector, emitter and gate electrodes with calking. Thus, this hermetically sealed container is strong in mechanical strength and high in explosion-proof durability and excellent in moisture resistance. And this semiconductor power module has a high TFT reliability and a high TCT reliability. Moreover, a power cycle durability is larger since the emitter pedals are pressure-contacted to the emitter electrode pads disposed on the semiconductor chip via the metallic hemispheres so as to implement a large conductive capacity.
摘要翻译：这是一种半导体功率模块，具有：陶瓷基板; 金属板结合到该基板的表面上; 圆柱形的金属法兰，气密地粘合到基片或金属板的表面上; 陶瓷壳体，用于密封金属法兰的开口; 以及焊接到金属板的至少一个或多个半导体芯片。金属法兰由热膨胀系数低的金属制成。通过用金属钎焊焊接金属法兰，陶瓷基板和外壳来形成气密密封的容器。此外，通过使用银钎焊将外部集电极，发射极和栅电极接合在壳体上。集电极，发射极和栅极导电柱分别与外部集电极，发射极和栅电极连接。因此，该密闭容器的机械强度强，防爆耐久性高，耐湿性优异。该半导体功率模块具有较高的TFT可靠性和较高的TCT可靠性。此外，由于发射踏板通过金属半球与设置在半导体芯片上的发射极电极焊盘压力接触以实现大的导电能力，所以功率循环耐久性更大。

8. 发明授权

US5708299A Multichip press-contact type semiconductor device 失效
标题翻译：多芯片压接式半导体器件
公开(公告)号：US5708299A
公开(公告)日：1998-01-13
申请号：US656868
申请日：1996-05-30
申请人： Satoshi Teramae , Michiaki Hiyoshi
发明人： Satoshi Teramae , Michiaki Hiyoshi
IPC分类号： H01L21/52 , H01L23/48 , H01L23/58 , H01L25/07 , H01L25/18 , H01L29/78 , H01L29/74 , H01L23/42
CPC分类号： H01L24/72 , H01L25/072 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/12035 , H01L2924/1305 , H01L2924/13055 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107
摘要： IGBT chips and FRD chips are arranged on the same plane so as to be press-contacted by an emitter press-contact electrode plate and a collector press-contact electrode plate at the same time. The FRD chips are arranged at a central portion, and the IGBT chips are arranged at the peripheral portion of the FRD chips. A resin substrate having an opening in its contact portion between a main surface of each of said chip and the emitter press-contact electrode plate is provided between both press-contact electrode plates. Gate press-contact electrodes are formed on the resin substrate to be electrically connected to a gate electrode of each of the IGBT chips. Also, gate wires are fixed to the resin substrate to supply a control signal for controlling the IGBT chips to the gate electrode of the IGBT chips from the gate wires through the gate press-contact electrode.
摘要翻译： IGBT芯片和FRD芯片布置在同一平面上，以便同时由发射体压接电极板和集电体压接电极板压接。 FRD芯片布置在中心部分，并且IGBT芯片布置在FRD芯片的周边部分。在两个压接电极板之间设置有在其每个所述芯片的主表面和发射极压接电极板之间的接触部分中具有开口的树脂基板。栅极压接电极形成在树脂基板上以与每个IGBT芯片的栅电极电连接。此外，栅极线固定到树脂基板，以通过栅极压接电极从栅极线提供用于控制IGBT芯片到IGBT芯片的栅电极的控制信号。

9. 发明授权

US08472188B2 Semiconductor power module, inverter, and method of manufacturing a power module 有权
标题翻译：半导体功率模块，逆变器及制造电源模块的方法
公开(公告)号：US08472188B2
公开(公告)日：2013-06-25
申请号：US12707207
申请日：2010-02-17
申请人： Keisuke Horiuchi , Atsuo Nishihara , Hiroshi Hozoji , Michiaki Hiyoshi , Takehide Yokozuka
发明人： Keisuke Horiuchi , Atsuo Nishihara , Hiroshi Hozoji , Michiaki Hiyoshi , Takehide Yokozuka
IPC分类号： H05K7/20 , F28F7/00
CPC分类号： H05K7/20927 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor power module includes an insulated substrate with a plurality of power semiconductor devices mounted thereon and a heat sink for radiating heat generated from the plurality of power semiconductor devices, wherein the heat sink is integrally molded with a plurality of radiation fins on one surface of a planate base by forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape, and the insulated substrate is bonded by metallic bonding to another surface of the base of the heat sink opposite the one surface of the base of the heat sink on which the radiation fins are formed.
摘要翻译：半导体功率模块包括其上安装有多个功率半导体器件的绝缘衬底和用于散发由多个功率半导体器件产生的热量的散热器，其中散热器与多个辐射翅片在一个表面上整体模制通过锻造工件的平面基座，使得填充到预定形状的阴模中的金属材料被预定形状的阳模挤压，并且绝缘基板通过金属接合粘结到散热片的基部的另一个表面与其上形成有辐射翅片的散热器的基部的一个表面相对。

10. 发明授权

US5760425A Internal compression bonded semiconductor device with a chip frame enabling a longer creepage distance 失效
标题翻译：具有芯片框架的内部压接半导体器件能够实现更长的爬电距离
公开(公告)号：US5760425A
公开(公告)日：1998-06-02
申请号：US790457
申请日：1997-01-29
申请人： Ikuko Kobayashi , Michiaki Hiyoshi
发明人： Ikuko Kobayashi , Michiaki Hiyoshi
IPC分类号： H01L25/11 , H01L21/52 , H01L23/043 , H01L29/74 , H01L31/111
CPC分类号： H01L23/043 , H01L24/01
摘要： The top-side (n-type) electrode and bottom-side (p-type) electrode of a Si chip with a p-n junction are pressed against a Cu cathode electrode and a Cu anode electrode via Mo plates respectively, thereby establishing electrical connection. The inner wall of a case is round and the Si chip is almost square. The top of the case is covered with ceramic, for example. A washer is a compression member. A chip frame holds the Si chip and Mo plates in compression positions and simultaneously determines their locations within the case. Specifically, the side face of the Si chip is not flush with the side face of each of the Mo plates. This enables the chip frame to make the creepage distance longer. Since the chip frame is a single chip frame without any joint, the creepage distance between the anode and cathode electrodes is defined by part of the chip frame that faces part of the surface of the Si chip and parts of the surfaces of the Mo plates sandwiching the Si chip between them.
摘要翻译：具有p-n结的Si芯片的顶侧（n型）电极和底侧（p型）电极分别通过Mo板压在Cu阴极电极和Cu阳极上，从而建立电连接。外壳的内壁是圆形的，Si芯片几乎是正方形的。例如，顶部覆盖着陶瓷。垫圈是压缩构件。芯片框架将Si芯片和Mo板保持在压缩位置，同时确定其在壳体内的位置。具体地说，Si芯片的侧面不与每个Mo板的侧面齐平。这使得芯片框架能够使爬电距离更长。由于芯片框架是没有任何接头的单个芯片框架，所以阳极和阴极电极之间的爬电距离由芯片框架的一部分限定，该部分芯片框架面向Si芯片表面的一部分，Mo板的部分表面夹持他们之间的Si芯片。

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