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1. 发明授权

US5945681A Ion implanting apparatus capable of preventing discharge flaw production on reverse side surface of wafer 失效
公开(公告)号：US5945681A
公开(公告)日：1999-08-31
申请号：US826421
申请日：1997-03-27
申请人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
发明人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
IPC分类号： H01J37/20 , C23C14/48 , H01J37/02 , H01J37/30 , H01J37/317 , H01L21/265
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/3174 , H01J2237/0044
摘要： An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

2. 发明授权

US6104025A Ion implanting apparatus capable of preventing discharge flaw production on reverse side surface of wafer 失效
标题翻译：离子注入装置能够防止在晶片背面产生放电缺陷
公开(公告)号：US6104025A
公开(公告)日：2000-08-15
申请号：US314303
申请日：1999-05-19
申请人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
发明人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
IPC分类号： H01J37/20 , C23C14/48 , H01J37/02 , H01J37/30 , H01J37/317 , H01L21/265
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/3174 , H01J2237/0044
摘要： An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.
摘要翻译：当硅晶片在超过300℃的温度下离子注入时，离子注入装置能够防止在硅晶片的背面出现放电缺陷。离子注入装置的离子电流为10mA至100 以及用于将电子束照射到硅晶片的反面上的电子束产生装置。控制电子束，使得在晶片和支撑晶片的旋转盘之间流动的电流基本上为零。

3. 发明授权

US5086256A External resonance circuit type radio frequency quadrupole accelerator 失效
标题翻译：外部谐振电路类型无线电频率四方加速器
公开(公告)号：US5086256A
公开(公告)日：1992-02-04
申请号：US438018
申请日：1989-11-20
申请人： Katsumi Tokiguchi , Kensuke Amemiya , Noriyuki Sakudo , Takayoshi Seki
发明人： Katsumi Tokiguchi , Kensuke Amemiya , Noriyuki Sakudo , Takayoshi Seki
IPC分类号： H01J27/02 , H01J37/08 , H01J37/147 , H01J37/317 , H05H7/02 , H05H9/00
CPC分类号： H01J37/3171 , H05H7/02
摘要： An Mev ion implantation apparatus which does not contaminate a sample substrate with heavy metal particles. The apparatus includes an external resonance circuit type RFQ accelerator incluidng undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to the electrodes. The undulated quadrupole electrodes and at least a part of metallic supports for supporting the electrodes and voltage supplying lines are provided with a surface coating of silicon, silicon doped with an impurity such as boron, phosphorus, or arsenic, or a light element having a mass number of 28 or less, such as carbon.

4. 发明授权

US5053678A Microwave ion source 失效
标题翻译： MICROWAVE离子源
公开(公告)号：US5053678A
公开(公告)日：1991-10-01
申请号：US323837
申请日：1989-03-15
申请人： Hidemi Koike , Noriyuki Sakudo , Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya
发明人： Hidemi Koike , Noriyuki Sakudo , Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya
IPC分类号： H01J27/18
CPC分类号： H01J27/18
摘要： A microwave ion source suitable for an apparatus which requires ions of an element of high reactivity such as oxygen, fluorine, etc., the microwave ion source being arranged to transmit microwaves between outer and inner conductors of a coaxial line. An ion extraction electrode is formed at least partly of a low magnetic permeability material while an acceleration electrode is formed of a high magnetic permeability material. The acceleration electrode is formed so as to have a structure in which a low magnetic permeability material of a certain thickness is stacked on the high magnetic permeability material at a plasma chamber side and openings of ion exit holes are formed in the portion of the low magnetic permeability material. A permanent magnet constituting a magnetic field generating means is provided to surround the microwave lead-in coaxial line. The direction of magnetization of the permanent magnet is made to coincide with the axial direction of the coaxial line. The end surface of the permanent magnet at the microwave lead-in side is coupled with the periphery of the high magnetic permeability material of the acceleration electrode through another high magnetic permeability material to form a magnetic path. The plasma chamber is formed of a dielectric insulator which transmits microwaves well. It is possible to realize an ion source in which ions can be extracted with a high electric field, and in which a high current ion beam can be extracted for a long time.

5. 发明授权

US5506472A Variable-frequency type radio-frequency quadrupole accelerator including quadrupole cooling means 失效
标题翻译：包括四极冷却装置的可变频率型射频四极加速器
公开(公告)号：US5506472A
公开(公告)日：1996-04-09
申请号：US240319
申请日：1994-05-10
申请人： Junya Ito , Katsumi Tokiguchi , Kensuke Amemiya , Noriyuki Sakudo
发明人： Junya Ito , Katsumi Tokiguchi , Kensuke Amemiya , Noriyuki Sakudo
IPC分类号： H05H7/04 , H05H7/02 , H05H9/00 , H01J19/74
CPC分类号： H05H7/02
摘要： A secondary coil forming a resonant circuit in cooperation with a quadrupole is composed of conductive tubes and cooled by feeding coolant such as pure water into the tubes which serve as coolant passages. This makes it possible to minimize thermal deformation of the secondary coil when a variable-frequency type radio-frequency quadrupole accelerator is driven with a large amount of power. As a result, variation of the resonant frequency of the resonant circuit, resulting from the deformation of the secondary coil, can be minimized. Consequently, a given ion acceleration ability can be provided. When a coolant passage for use in cooling the primary coil is included and coolant such as pure water is fed into the coolant passage, thermal deformation of the primary coil can be minimized. Thus, impedance matching with the resonant circuit can be maintained on a stable basis. When the secondary coil is made by aligning several unit secondary coils in the axial direction of the quadrupole, the resonant frequency can be varied by mounting or dismounting the unit secondary coils independently.
摘要翻译：与四极合作形成谐振电路的次级线圈由导电管组成，并通过将诸如纯净水的冷却剂送入用作冷却剂通道的管中来冷却。这使得当以大量功率驱动可变频率型射频四极加速器时，可以最小化次级线圈的热变形。结果，由二次线圈的变形引起的谐振电路的谐振频率的变化可以最小化。因此，可以提供给定的离子加速能力。当包括用于冷却初级线圈的冷却剂通道时，诸如纯水的冷却剂被供给到冷却剂通道中，可以使初级线圈的热变形最小化。因此，可以在稳定的基础上保持与谐振电路的阻抗匹配。当通过在四极杆的轴向对准多个单元次级线圈来制造次级线圈时，可以通过独立地安装或拆卸单元次级线圈来改变谐振频率。

6. 发明授权

US5349196A Ion implanting apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US5349196A
公开(公告)日：1994-09-20
申请号：US43794
申请日：1993-04-07
申请人： Kensuke Amemiya , Yoshimi Hakamata , Katsumi Tokiguchi , Noriyuki Sakudo
发明人： Kensuke Amemiya , Yoshimi Hakamata , Katsumi Tokiguchi , Noriyuki Sakudo
IPC分类号： C23C14/48 , H01J37/30 , H01J37/317 , H01L21/265
CPC分类号： H01J37/3007 , H01J37/3171
摘要： An ion implanting apparatus includes a magnetic quadrupole lens disposed between an ion source and an RFQ accelerator. The magnetic quadrupole lens carries out mass spectrometry of an ion beam extracted from the ion source while converging the ion beam, and reduces the divergence of the ion beam due to the space charge effect as compared to an electrostatic quadrupole lens. The use of the magnetic quadrupole lens makes it possible to utilize to a maximum extent the ion beam extracted from the ion source and to restrict to a minimum the reduction in the current of the ion beam during passage of the ion beam, thereby making it possible to generate a high-energy ion beam having a large current on the order of several tens of milliamperes.
摘要翻译：离子注入装置包括设置在离子源和RFQ加速器之间的磁性四极透镜。磁性四极杆透镜在离子束收敛时进行从离子源提取的离子束的质谱，并且与静电四极透镜相比，由于空间电荷效应而减小离子束的发散。使用磁性四极透镜使得可以最大程度地利用从离子源提取的离子束并且在离子束通过期间限制离子束的电流的最小化，从而使其成为可能以产生具有大约几十毫安量级的大电流的高能离子束。

7. 发明授权

US5925886A Ion source and an ion implanting apparatus using it 失效
标题翻译：离子源和使用它的离子注入装置
公开(公告)号：US5925886A
公开(公告)日：1999-07-20
申请号：US879302
申请日：1997-06-19
申请人： Takayoshi Seki , Katsumi Tokiguchi
发明人： Takayoshi Seki , Katsumi Tokiguchi
IPC分类号： C23C14/35 , C23C14/48 , H01J27/16 , H01J27/18 , H01J37/08 , H01J37/317 , H01L21/265
CPC分类号： H01J27/18 , H01J2237/0817 , H01J2237/31701
摘要： An ion source comprises a discharge chamber; a wave guide transmitting microwave to generate plasma within said discharge chamber; and a matching tube, located between the discharge chamber and the wave guide, the cross-sectional form of which is tapered in the width thereof in the direction of propagation of the microwave.
摘要翻译：离子源包括放电室; 发射微波以在所述放电室内产生等离子体的波导; 以及位于放电室和波导之间的匹配管，其横截面形式沿着其在微波传播方向上的宽度逐渐变细。

8. 发明授权

US5729027A Ion implanter 失效
标题翻译：离子注入机
公开(公告)号：US5729027A
公开(公告)日：1998-03-17
申请号：US454548
申请日：1995-05-30
申请人： Katsumi Tokiguchi , Takayoshi Seki , Tetsunori Kaji
发明人： Katsumi Tokiguchi , Takayoshi Seki , Tetsunori Kaji
IPC分类号： C23C14/48 , H01J37/317 , H01L21/265
CPC分类号： H01J37/317 , H01J2237/04756
摘要： An ion implanter for implementing ion implantation using mass-separated ions using a limited energy of less than 10 keV, locates the decelerator between the ion source and the mass separator, and the beam transport space provided between the ion source and the decelerator is maintained at a higher negative voltage so as to decelerate the ion beam in combination, ensuring a large-current ion beam in excess of 1 mA to be maintained on the surface of a target.
摘要翻译：使用小于10keV的有限能量使用质量分离的离子实现离子注入的离子注入机将离子源和质量分离器之间的减速器定位，并且将设置在离子源和减速器之间的束传送空间保持在更高的负电压以使离子束组合减速，确保在目标表面上保持超过1mA的大电流离子束。

9. 发明授权

US6043499A Charge-up prevention method and ion implanting apparatus 失效
标题翻译：充电预防方法和离子注入装置
公开(公告)号：US6043499A
公开(公告)日：2000-03-28
申请号：US54496
申请日：1998-04-03
申请人： Takayoshi Seki , Katsumi Tokiguchi
发明人： Takayoshi Seki , Katsumi Tokiguchi
IPC分类号： H01J37/317 , H01J37/02 , H01J37/304
CPC分类号： H01J37/026 , H01J2237/0044 , H01J2237/31701
摘要： A charge-up prevention method for use when ion beams are implanted simultaneously with electrons, prevents charge-up on a plurality of objects to be irradiated. A supply quantity of electrons is controlled while directly measuring the potential of the objects that are to be irradiated, and an ion implanting apparatus which irradiates ion beams onto objects which are arranged in a circular shape and moving while rotating, includes an electron source irradiating simultaneously ion beams and electrons for charge prevention, and a controller for controlling a supply quantity of electrons while directly measuring the potential of objects to be irradiated.
摘要翻译：当与电子同时注入离子束时使用的防止充电的方法防止对多个被照射物体的充电。在直接测量被照射物体的电位的同时控制电子的供给量，将离子束照射到圆形状并旋转移动的物体上的离子注入装置包括同时照射的电子源用于防止电荷的离子束和电子，以及用于在直接测量被照射物体的电位的同时控制电子供给量的控制器。

10. 发明授权

US4533831A Non-mass-analyzed ion implantation 失效
标题翻译：非质量分析离子注入
公开(公告)号：US4533831A
公开(公告)日：1985-08-06
申请号：US477375
申请日：1983-03-21
申请人： Haruo Itoh , Katsumi Tokiguchi , Terunori Warabisako , Tadashi Saitoh , Takashi Tokuyama
发明人： Haruo Itoh , Katsumi Tokiguchi , Terunori Warabisako , Tadashi Saitoh , Takashi Tokuyama
IPC分类号： H01J37/147 , H01J37/317 , H01L21/223 , H01L21/265 , G01N23/00
CPC分类号： H01L21/2236 , H01J37/3171
摘要： A non-mass-analyzed ion implantation process wherein two or more species of ions of the same polarity having greatly different ion masses are generated from a compound source material, the ions are accelerated under the application of an electric field, and the accelerated ions are scanned under the application of a magnetic field so as to be implanted into a target at a distribution profile which varies with the species of ions. An ion implantation apparatus can be simplified. A large ion beam current with a large spot size can be used and ions can be implanted to the target at a large dose within a short time. Especially, the non-mass-analyzed ion implantation is advantageously utilized for production of solar batteries.
摘要翻译：一种非质量分析的离子注入方法，其中从化合物源材料产生具有极大不同离子质量的相同极性的两种或更多种离子，在施加电场的情况下离子被加速，加速的离子是在施加磁场的情况下进行扫描，以便以离子种类变化的分布轮廓将其植入靶中。离子注入装置可以简化。可以使用具有大光斑尺寸的大离子束电流，并且可以在短时间内以大剂量将离子注入靶。特别地，非质量分析的离子注入有利地用于生产太阳能电池。

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