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1. 发明授权

US5086256A External resonance circuit type radio frequency quadrupole accelerator 失效
标题翻译：外部谐振电路类型无线电频率四方加速器
公开(公告)号：US5086256A
公开(公告)日：1992-02-04
申请号：US438018
申请日：1989-11-20
申请人： Katsumi Tokiguchi , Kensuke Amemiya , Noriyuki Sakudo , Takayoshi Seki
发明人： Katsumi Tokiguchi , Kensuke Amemiya , Noriyuki Sakudo , Takayoshi Seki
IPC分类号： H01J27/02 , H01J37/08 , H01J37/147 , H01J37/317 , H05H7/02 , H05H9/00
CPC分类号： H01J37/3171 , H05H7/02
摘要： An Mev ion implantation apparatus which does not contaminate a sample substrate with heavy metal particles. The apparatus includes an external resonance circuit type RFQ accelerator incluidng undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to the electrodes. The undulated quadrupole electrodes and at least a part of metallic supports for supporting the electrodes and voltage supplying lines are provided with a surface coating of silicon, silicon doped with an impurity such as boron, phosphorus, or arsenic, or a light element having a mass number of 28 or less, such as carbon.

2. 发明授权

US5053678A Microwave ion source 失效
标题翻译： MICROWAVE离子源
公开(公告)号：US5053678A
公开(公告)日：1991-10-01
申请号：US323837
申请日：1989-03-15
申请人： Hidemi Koike , Noriyuki Sakudo , Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya
发明人： Hidemi Koike , Noriyuki Sakudo , Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya
IPC分类号： H01J27/18
CPC分类号： H01J27/18
摘要： A microwave ion source suitable for an apparatus which requires ions of an element of high reactivity such as oxygen, fluorine, etc., the microwave ion source being arranged to transmit microwaves between outer and inner conductors of a coaxial line. An ion extraction electrode is formed at least partly of a low magnetic permeability material while an acceleration electrode is formed of a high magnetic permeability material. The acceleration electrode is formed so as to have a structure in which a low magnetic permeability material of a certain thickness is stacked on the high magnetic permeability material at a plasma chamber side and openings of ion exit holes are formed in the portion of the low magnetic permeability material. A permanent magnet constituting a magnetic field generating means is provided to surround the microwave lead-in coaxial line. The direction of magnetization of the permanent magnet is made to coincide with the axial direction of the coaxial line. The end surface of the permanent magnet at the microwave lead-in side is coupled with the periphery of the high magnetic permeability material of the acceleration electrode through another high magnetic permeability material to form a magnetic path. The plasma chamber is formed of a dielectric insulator which transmits microwaves well. It is possible to realize an ion source in which ions can be extracted with a high electric field, and in which a high current ion beam can be extracted for a long time.

3. 发明授权

US5945681A Ion implanting apparatus capable of preventing discharge flaw production on reverse side surface of wafer 失效
公开(公告)号：US5945681A
公开(公告)日：1999-08-31
申请号：US826421
申请日：1997-03-27
申请人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
发明人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
IPC分类号： H01J37/20 , C23C14/48 , H01J37/02 , H01J37/30 , H01J37/317 , H01L21/265
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/3174 , H01J2237/0044
摘要： An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

4. 发明授权

US6104025A Ion implanting apparatus capable of preventing discharge flaw production on reverse side surface of wafer 失效
标题翻译：离子注入装置能够防止在晶片背面产生放电缺陷
公开(公告)号：US6104025A
公开(公告)日：2000-08-15
申请号：US314303
申请日：1999-05-19
申请人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
发明人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
IPC分类号： H01J37/20 , C23C14/48 , H01J37/02 , H01J37/30 , H01J37/317 , H01L21/265
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/3174 , H01J2237/0044
摘要： An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.
摘要翻译：当硅晶片在超过300℃的温度下离子注入时，离子注入装置能够防止在硅晶片的背面出现放电缺陷。离子注入装置的离子电流为10mA至100 以及用于将电子束照射到硅晶片的反面上的电子束产生装置。控制电子束，使得在晶片和支撑晶片的旋转盘之间流动的电流基本上为零。

5. 发明授权

US5925886A Ion source and an ion implanting apparatus using it 失效
标题翻译：离子源和使用它的离子注入装置
公开(公告)号：US5925886A
公开(公告)日：1999-07-20
申请号：US879302
申请日：1997-06-19
申请人： Takayoshi Seki , Katsumi Tokiguchi
发明人： Takayoshi Seki , Katsumi Tokiguchi
IPC分类号： C23C14/35 , C23C14/48 , H01J27/16 , H01J27/18 , H01J37/08 , H01J37/317 , H01L21/265
CPC分类号： H01J27/18 , H01J2237/0817 , H01J2237/31701
摘要： An ion source comprises a discharge chamber; a wave guide transmitting microwave to generate plasma within said discharge chamber; and a matching tube, located between the discharge chamber and the wave guide, the cross-sectional form of which is tapered in the width thereof in the direction of propagation of the microwave.
摘要翻译：离子源包括放电室; 发射微波以在所述放电室内产生等离子体的波导; 以及位于放电室和波导之间的匹配管，其横截面形式沿着其在微波传播方向上的宽度逐渐变细。

6. 发明授权

US5729027A Ion implanter 失效
标题翻译：离子注入机
公开(公告)号：US5729027A
公开(公告)日：1998-03-17
申请号：US454548
申请日：1995-05-30
申请人： Katsumi Tokiguchi , Takayoshi Seki , Tetsunori Kaji
发明人： Katsumi Tokiguchi , Takayoshi Seki , Tetsunori Kaji
IPC分类号： C23C14/48 , H01J37/317 , H01L21/265
CPC分类号： H01J37/317 , H01J2237/04756
摘要： An ion implanter for implementing ion implantation using mass-separated ions using a limited energy of less than 10 keV, locates the decelerator between the ion source and the mass separator, and the beam transport space provided between the ion source and the decelerator is maintained at a higher negative voltage so as to decelerate the ion beam in combination, ensuring a large-current ion beam in excess of 1 mA to be maintained on the surface of a target.
摘要翻译：使用小于10keV的有限能量使用质量分离的离子实现离子注入的离子注入机将离子源和质量分离器之间的减速器定位，并且将设置在离子源和减速器之间的束传送空间保持在更高的负电压以使离子束组合减速，确保在目标表面上保持超过1mA的大电流离子束。

7. 发明授权

US6043499A Charge-up prevention method and ion implanting apparatus 失效
标题翻译：充电预防方法和离子注入装置
公开(公告)号：US6043499A
公开(公告)日：2000-03-28
申请号：US54496
申请日：1998-04-03
申请人： Takayoshi Seki , Katsumi Tokiguchi
发明人： Takayoshi Seki , Katsumi Tokiguchi
IPC分类号： H01J37/317 , H01J37/02 , H01J37/304
CPC分类号： H01J37/026 , H01J2237/0044 , H01J2237/31701
摘要： A charge-up prevention method for use when ion beams are implanted simultaneously with electrons, prevents charge-up on a plurality of objects to be irradiated. A supply quantity of electrons is controlled while directly measuring the potential of the objects that are to be irradiated, and an ion implanting apparatus which irradiates ion beams onto objects which are arranged in a circular shape and moving while rotating, includes an electron source irradiating simultaneously ion beams and electrons for charge prevention, and a controller for controlling a supply quantity of electrons while directly measuring the potential of objects to be irradiated.
摘要翻译：当与电子同时注入离子束时使用的防止充电的方法防止对多个被照射物体的充电。在直接测量被照射物体的电位的同时控制电子的供给量，将离子束照射到圆形状并旋转移动的物体上的离子注入装置包括同时照射的电子源用于防止电荷的离子束和电子，以及用于在直接测量被照射物体的电位的同时控制电子供给量的控制器。

8. 发明授权

US5064520A Method and apparatus for forming a film 失效
标题翻译：用于形成膜的方法和装置
公开(公告)号：US5064520A
公开(公告)日：1991-11-12
申请号：US480131
申请日：1990-02-14
申请人： Kiyoshi Miyake , Yasunori Ohno , Masato Isogai , Yukio Nakagawa , Takayoshi Seki , Koukichi Ouhata , Kenichi Natsui , Terunori Warabisako , Keiji Arimatsu
发明人： Kiyoshi Miyake , Yasunori Ohno , Masato Isogai , Yukio Nakagawa , Takayoshi Seki , Koukichi Ouhata , Kenichi Natsui , Terunori Warabisako , Keiji Arimatsu
IPC分类号： C23C14/12 , C23C14/34
CPC分类号： C23C14/3414 , C23C14/12 , C23C14/3407
摘要： This invention relates to a method and an apparatus for forming a film, which are suitable for forming a film of a semiconductor, dielectric, metal, insulator, or organic substance. In order to form a film of high purity and quality at high speed, a particle beam such as an ion beam, an electron beam, or a plasma is applied to a sputtering target comprising a substance formed by bonding atoms or molecules with either van der Waals forces or hydrogen bonding forces, the particles are sputtered thereby from the target, fly in the space in the vacuum chamber, reach the substrate on which they are deposited to form a desired film. To form an organic film free of pinholes, impurities, or disorder in the molecular composition and arrangement in a large area at high speed, a particle beam of about 10 eV or less is applied to the target comprising an organic compound disposed in a vacuum, the particle beam having a level of energy as high as can break the molecular crystalline bonds and not high enough to break the nonmolecular crystalline bonds, out of the molecular crystalline bonds by van der Waals forces connecting the atoms constituting the organic compound and the nonmolecular crystalline bonds by covalent bonds, for example, other than van der Waals forces, and the sputtered particles from the target are deposited on the substrate facing the target to form a desired film of an organic compound.

9. 发明授权

US06614190B2 Ion implanter 有权
公开(公告)号：US06614190B2
公开(公告)日：2003-09-02
申请号：US09939749
申请日：2001-08-28
申请人： Hiroyuki Tomita , Kazuo Mera , Isao Hashimoto , Yasunori Nakano , Takayoshi Seki
发明人： Hiroyuki Tomita , Kazuo Mera , Isao Hashimoto , Yasunori Nakano , Takayoshi Seki
IPC分类号： H05B3126
CPC分类号： H01J37/3171 , H01J2237/20 , H01L21/68707
摘要： A wafer holder for holding a wafer includes a wafer holder base, a wafer fixing part, holder pins, a bearing, a housing, and a coil spring. The wafer fixing part is fixed to an outer circumference of a wafer holder. The holder pins are arranged to face the wafer fixing part. The holder pin is rotatably supported by the bearing. The holder pins are movably supported along the diameter direction of the wafer holder base by the coil spring. In the process of holding a side of the wafer with the holder pins, when force from the wafer works on the holder pins, the holder pins are rotated with a Z axis as a center, thus reducing frictional force between the holder pin and the wafer. Accordingly, it is possible to prevent particle generation from holding an implanting object.

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