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1. 发明申请

US20050121697A1 Storage device 有权
标题翻译：储存设备
公开(公告)号：US20050121697A1
公开(公告)日：2005-06-09
申请号：US10999050
申请日：2004-11-29
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
IPC分类号： G11C16/04 , G11C13/02 , H01L27/10 , H01L31/109 , H01L45/00
CPC分类号： G11C13/0011 , G11C13/0009 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/72 , G11C2213/79 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/144 , H01L45/146
摘要： A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first and the second electrodes. Furthermore, an oxidation-reduction active material changeable into an electrode reaction inhibition layer by applying voltages to the first and the second electrodes is contained in a region that is covered by an electric field, the electric field being generated when the voltage is applied, and the electrode reaction inhibition layer is either formed along an interface region between the second electrode and the inter-electrode material layer, or changes an area thereof, or disappears depending on an application condition of the voltage to the first and the second.
摘要翻译：存储装置包括第一电极，面对第一电极的第二电极，设置在第一电极和第二电极之间的电极间材料层，以及向第一和第二电极施加预定电压的电压施加单元。此外，通过向第一和第二电极施加电压而可变化为电极反应抑制层的氧化还原活性物质被包含在被电场覆盖的区域中，电场在施加电压时产生，并且电极反应抑制层沿着第二电极和电极间材料层之间的界面区域形成，或者改变其面积，或者根据第一和第二电压的施加条件而消失。

2. 发明授权

US09564583B2 Memory device comprising a non-phase-changing amorphous chalcogenide memory layer and a metal chalcogenide ion-source layer 有权
标题翻译：存储器件包括非相变非晶态硫族化物存储层和金属硫族化物离子源层
公开(公告)号：US09564583B2
公开(公告)日：2017-02-07
申请号：US10514009
申请日：2004-03-18
申请人： Katsuhisa Aratani , Akira Kouchiyama , Minoru Ishida
发明人： Katsuhisa Aratani , Akira Kouchiyama , Minoru Ishida
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory element includes an amorphous thin-film that is between a first electrode and a second electrode in which at least one of the first electrode and the second electrode contains Ag or Cu. The amorphous thin film is a non-phase changing, amorphous material. A storage device includes a plurality of memory elements. Each memory element includes a wiring connected to a side of the first electrode and a wiring connected to a side of the second electrode.
摘要翻译：存储元件包括在第一电极和第二电极之间的非晶薄膜，其中第一电极和第二电极中的至少一个包含Ag或Cu。无定形薄膜是非相变非晶材料。存储装置包括多个存储元件。每个存储元件包括连接到第一电极侧的布线和连接到第二电极侧的布线。

3. 发明授权

US07425724B2 Memory device and method of production and method of use of same and semiconductor device and method of production of same 有权
标题翻译：存储器件及其制造方法及其使用方法及半导体器件及其制造方法
公开(公告)号：US07425724B2
公开(公告)日：2008-09-16
申请号：US11256920
申请日：2005-10-24
申请人： Katsuhisa Aratani , Minoru Ishida , Akira Kouchiyama
发明人： Katsuhisa Aratani , Minoru Ishida , Akira Kouchiyama
IPC分类号： H01L27/108
CPC分类号： H01L27/105 , H01L27/24 , H01L2924/0002 , Y10S257/906 , H01L2924/00
摘要： A memory device able to be produced without requiring high precision alignment, a method of production of the same, and a method of use of a memory device produced in this way, wherein a peripheral circuit portion (first semiconductor portion) formed by a first minimum processing dimension is formed on a substrate, a memory portion (second semiconductor portion) formed by a second minimum processing dimension smaller than the first minimum processing dimension is stacked above it, and the memory portion (second semiconductor portion) is stacked with respect to the peripheral circuit portion (first semiconductor portion) with an alignment precision rougher than the second minimum processing dimension or wherein memory cells configured by 2-terminal devices are formed in regions where word lines and bit lines intersect in the memory portion, and contact portions connecting the word lines and bit lines and the peripheral circuit portions are arranged in at least two columns in directions in which the word lines and the bit lines extend.
摘要翻译：一种能够在不需要高精度对准的情况下制造的存储器件，其制造方法以及以这种方式制造的存储器件的使用方法，其中，由第一最小值形成的外围电路部分（第一半导体部分）在基板上形成加工尺寸，将由第二最小加工尺寸小的第二最小加工尺寸形成的存储部分（第二半导体部分）堆叠在其上方，并且存储部分（第二半导体部分）相对于具有比第二最小处理尺寸更粗糙的对准精度的外围电路部分（第一半导体部分），或者其中由字线和位线在存储部分相交的区域中形成由2端子器件构成的存储单元，字线和位线以及外围电路部分沿方向布置成至少两列其中字线和位线延伸。

4. 发明申请

US20050226062A1 Memory element and storage device using this 有权
标题翻译：使用这个的内存元素和存储设备
公开(公告)号：US20050226062A1
公开(公告)日：2005-10-13
申请号：US10514009
申请日：2004-03-18
申请人： Katsuhisa Aratani , Akira Kouchiyama , Minoru Ishida
发明人： Katsuhisa Aratani , Akira Kouchiyama , Minoru Ishida
IPC分类号： H01L45/00 , G11C11/063
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/1625
摘要： A memory element in which recording and reading-out of information can easily be performed and which can be manufactured easily using a comparatively simple manufacturing method and a storage device using the memory element are provided. A memory element 10 includes an amorphous thin-film 4 that is in between a first electrode 2 and a second electrode 5, in which at least one electrode in the first electrode 2 and the second electrode 5 contains Ag or Cu and the amorphous thin-film 4 is composed of Ge, and at least one element selected from S, Se, Te and Sb. Also a storage device includes the memory element 10, a wiring connected to the side of the first electrode 2 and a wiring connected to the side of the second electrode 5, in which a memory element 10 is arranged in large numbers.
摘要翻译：提供了一种存储元件，其中可以容易地执行信息的记录和读取，并且可以使用相对简单的制造方法和使用存储元件的存储装置容易地制造信息。存储元件10包括在第一电极2和第二电极5之间的非晶薄膜4，其中第一电极2和第二电极5中的至少一个电极包含Ag或Cu，并且非晶薄膜4，膜4由Ge和选自S，Se，Te和Sb中的至少一种元素组成。存储装置还包括存储元件10，连接到第一电极2侧的布线和连接到第二电极5侧的布线，其中存储元件10大量布置。

5. 发明申请

US20050097257A1 Storage device 有权
标题翻译：储存设备
公开(公告)号：US20050097257A1
公开(公告)日：2005-05-05
申请号：US10851897
申请日：2004-05-21
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama
IPC分类号： G11C13/00 , G11C7/00 , G11C11/409 , G11C13/02 , G11C16/02 , H01L27/10 , G06F12/00
CPC分类号： G11C13/0011 , G11C13/0064 , G11C13/0069 , G11C16/3459 , G11C2013/009
摘要： A storage device comprises a memory element and an applying means for applying a voltage to the memory element wherein the memory element changes its characteristic to record thereon information with application of a voltage to the memory element by the applying means, the memory element further changing its characteristic when the same information is recorded on the memory element continuously. The memory element has a recording method which comprises the steps of detecting content of information that has already been recorded on the memory element when the information is recorded, comparing the information that has already been recorded on the memory element with information to be recorded on the memory element, applying a voltage to the memory element to make an ordinary information recording process if the two information are different from each other and disabling the ordinary information recording process when the two information are identical to each other. Thus, the storage device according to the present invention can satisfactorily carry out recording operations even when information is recorded continuously.
摘要翻译：存储装置包括存储元件和用于向存储元件施加电压的施加装置，其中存储元件改变其特性以便通过施加装置向存储元件施加电压来记录信息，存储元件进一步改变其当相同的信息被连续记录在存储元件上时的特性。存储元件具有记录方法，其包括以下步骤：当记录信息时已经记录在存储元件上的信息的内容，将已经记录在存储元件上的信息与要记录在存储元件上的信息进行比较存储元件，如果两个信息彼此不同，则向存储元件施加电压以进行普通信息记录处理，并且当两个信息彼此相同时禁用普通信息记录处理。因此，即使当连续记录信息时，根据本发明的存储装置也能令人满意地执行记录操作。

6. 发明授权

US07092278B2 Memory device 有权
标题翻译：内存设备
公开(公告)号：US07092278B2
公开(公告)日：2006-08-15
申请号：US11071082
申请日：2005-03-03
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
IPC分类号： G11C11/00 , G11C19/08 , G11C7/02
CPC分类号： G11C13/0011 , G11C11/5614 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/009 , G11C2213/34 , G11C2213/79
摘要： Data reading can be easily and precisely performed by setting specific conditions in writing into a selected memory cell. A memory cell has a structure, in which an interelectrode material layer is sandwiched between a first electrode and a second electrode. Data is stored by a change in a resistance value between the first electrode and the second electrode. The resistance value when a memory element is in a high resistance state is expressed as R_mem_high; the resistance value when the memory element is in a low resistance state is expressed as R_mem_low1; the resistance value of a load circuit is expressed as R_load; the reading voltage is expressed as Vread by setting the voltage of a second power supply line to the reference voltage; and the threshold voltage is expressed as Vth_critical. In writing data into the memory cell, the low resistance state is created so that these parameters satisfy specific relations. The load circuit is formed by an element having the same structure as of the memory element of the memory cell.
摘要翻译：通过将特定条件写入选定的存储单元，可以容易且精确地执行数据读取。存储单元具有其中电极间材料层夹在第一电极和第二电极之间的结构。通过第一电极和第二电极之间的电阻值的变化来存储数据。当存储元件处于高电阻状态时的电阻值表示为R_mem_high; 当存储元件处于低电阻状态时的电阻值表示为R_mem_low1; 负载电路的电阻值表示为R_load; 通过将第二电源线的电压设置为参考电压，将读取电压表示为Vread; 阈值电压表示为Vth_critical。在将数据写入存储单元时，产生低电阻状态，使得这些参数满足特定关系。负载电路由具有与存储单元的存储元件相同结构的元件形成。

7. 发明授权

US07016234B2 Storage device 有权
标题翻译：储存设备
公开(公告)号：US07016234B2
公开(公告)日：2006-03-21
申请号：US10883922
申请日：2004-07-02
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
IPC分类号： G11C7/00
CPC分类号： G11C13/02 , G11C13/0009 , G11C2213/79 , H01L27/101 , H01L27/105 , H01L27/24
摘要： A storage device is provided. The storage device includes a number of storage cells arranged and each having a storage element and an active element including a MOS transistor that controls access to the storage element, and in which applying a voltage to the storage element the resistance value of the storage element changes and information is recorded wherein the resistance value of a storage element after information has been written is prevented from becoming lower than necessary and in which information writing can be easily performed.
摘要翻译：提供存储设备。存储装置包括多个存储单元，每个存储单元具有存储元件和有源元件，该有源元件包括控制对存储元件的访问的MOS晶体管，并且向存储元件施加电压，存储元件的电阻值改变并且记录其中已经写入信息之后的存储元件的电阻值变得低于必要并且可以容易地进行信息写入的信息。

8. 发明申请

US20050035373A1 Storage device 有权
标题翻译：储存设备
公开(公告)号：US20050035373A1
公开(公告)日：2005-02-17
申请号：US10883922
申请日：2004-07-02
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
IPC分类号： G11C13/00 , G11C7/00 , G11C11/00 , G11C16/02 , H01L27/10 , H01L27/105 , H01L27/24 , H01L29/94
CPC分类号： G11C13/02 , G11C13/0009 , G11C2213/79 , H01L27/101 , H01L27/105 , H01L27/24
摘要： A storage device is provided. The storage device includes a number of storage cells arranged and each having a storage element and an active element including a MOS transistor that controls access to the storage element, and in which applying a voltage to the storage element the resistance value of the storage element changes and information is recorded wherein the resistance value of a storage element after information has been written is prevented from becoming lower than necessary and in which information writing can be easily performed.
摘要翻译：提供存储设备。存储装置包括多个存储单元，每个存储单元具有存储元件和有源元件，该有源元件包括控制对存储元件的访问的MOS晶体管，并且向存储元件施加电压，存储元件的电阻值改变并且记录其中已经写入信息之后的存储元件的电阻值变得低于必要并且可以容易地进行信息写入的信息。

9. 发明授权

US07167390B2 Storage device with resistive memory cells enduring repetitive data writing 有权
标题翻译：具有电阻式存储单元的存储设备可持续重复数据写入
公开(公告)号：US07167390B2
公开(公告)日：2007-01-23
申请号：US10851897
申请日：2004-05-21
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , G11C13/0064 , G11C13/0069 , G11C16/3459 , G11C2013/009
摘要： A storage device comprises a memory element and an applying unit for applying a voltage to the memory element wherein the memory element changes its characteristic to record thereon information with application of a voltage to the memory element by the applying unit, the memory element further changing its characteristic when the same information is recorded on the memory element continuously. The memory element has a recording method which comprises the steps of detecting content of information that has already been recorded on the memory element when the information is recorded, comparing the information that has already been recorded on the memory element with information to be recorded on the memory element, applying a voltage to the memory element to make an ordinary information recording process if the two information are different from each other and disabling the ordinary information recording process when the two information are identical to each other. Thus, the storage device according to the present invention can satisfactorily carry out recording operations even when information is recorded continuously.
摘要翻译：存储装置包括存储元件和施加单元，用于向存储元件施加电压，其中存储元件改变其特征以便通过施加单元向存储元件施加电压以记录信息，存储元件进一步改变其当相同的信息被连续记录在存储元件上时的特性。存储元件具有记录方法，其包括以下步骤：当记录信息时已经记录在存储元件上的信息的内容，将已经记录在存储元件上的信息与要记录在存储元件上的信息进行比较存储元件，如果两个信息彼此不同，则向存储元件施加电压以进行普通信息记录处理，并且当两个信息彼此相同时禁用普通信息记录处理。因此，即使当连续记录信息时，根据本发明的存储装置也能令人满意地执行记录操作。

10. 发明授权

US07126152B2 Storage device 有权
标题翻译：储存设备
公开(公告)号：US07126152B2
公开(公告)日：2006-10-24
申请号：US10999050
申请日：2004-11-29
申请人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
发明人： Minoru Ishida , Katsuhisa Aratani , Akira Kouchiyama , Tomohito Tsushima
IPC分类号： H01L29/06 , H01L29/08 , H01L39/00
CPC分类号： G11C13/0011 , G11C13/0009 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/72 , G11C2213/79 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/144 , H01L45/146
摘要： A storage device includes a first electrode, a second electrode facing the first electrode, an inter-electrode material layer provided between the first electrode and the second electrode, and a voltage application unit applying a predetermined voltage to the first and the second electrodes. Furthermore, an oxidation-reduction active material changeable into an electrode reaction inhibition layer by applying voltages to the first and the second electrodes is contained in a region that is covered by an electric field, the electric field being generated when the voltage is applied, and the electrode reaction inhibition layer is either formed along an interface region between the second electrode and the inter-electrode material layer, or changes an area thereof, or disappears depending on an application condition of the voltage to the first and the second.
摘要翻译：存储装置包括第一电极，面对第一电极的第二电极，设置在第一电极和第二电极之间的电极间材料层，以及向第一和第二电极施加预定电压的电压施加单元。此外，通过向第一和第二电极施加电压而可变化为电极反应抑制层的氧化还原活性物质被包含在被电场覆盖的区域中，电场在施加电压时产生，并且电极反应抑制层沿着第二电极和电极间材料层之间的界面区域形成，或者改变其面积，或者根据第一和第二电压的施加条件而消失。

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