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1. 发明授权

US07589355B2 Light emitting diode, method of manufacturing light emitting diode, light emitting diode backlight, light emitting diode illuminating device, light emitting diode display, and electronic apparatus 有权
标题翻译：发光二极管，制造发光二极管的方法，发光二极管背光，发光二极管照明装置，发光二极管显示器和电子设备
公开(公告)号：US07589355B2
公开(公告)日：2009-09-15
申请号：US11422492
申请日：2006-06-06
申请人： Katsuhiro Tomoda , Jun Suzuki , Masato Doi , Kensuke Kojima
发明人： Katsuhiro Tomoda , Jun Suzuki , Masato Doi , Kensuke Kojima
IPC分类号： H01L29/267 , H01L29/22
CPC分类号： H01L33/54 , H01L33/20 , H01L33/46
摘要： A light emitting diode is provided. The light emitting diode includes a semiconductor layer that forms a light emitting diode structure and has a major face and an end face inclined at an angle θ1 to the major face, and a reflector that is provided outside the end face with being opposed to the end face, and includes at least a portion inclined at an angle θ2 to the major face, the angle θ2 being smaller than the angle θ1.
摘要翻译：提供发光二极管。发光二极管包括形成发光二极管结构的半导体层，并且具有与主面成角度θ1倾斜的主面和端面，以及设置在端面外侧并与端部相对的反射器并且包括至少一个以与主面成角度θ2倾斜的部分，角度θ2小于角度θ1。

2. 发明申请

US20060278886A1 LIGHT EMITTING DIODE, METHOD OF MANUFACTURING LIGHT EMITTING DIODE, LIGHT EMITTING DIODE BACKLIGHT, LIGHT EMITTING DIODE ILLUMINATING DEVICE, LIGHT EMITTING DIODE DISPLAY, AND ELECTRONIC APPARATUS 有权
标题翻译：发光二极管，制造发光二极管的方法，发光二极管背光灯，发光二极管照明装置，发光二极管显示器和电子装置
公开(公告)号：US20060278886A1
公开(公告)日：2006-12-14
申请号：US11422492
申请日：2006-06-06
申请人： Katsuhiro Tomoda , Jun Suzuki , Masato Doi , Kensuke Kojima
发明人： Katsuhiro Tomoda , Jun Suzuki , Masato Doi , Kensuke Kojima
IPC分类号： H01L33/00
CPC分类号： H01L33/54 , H01L33/20 , H01L33/46
摘要： A light emitting diode is provided. The light emitting diode includes a semiconductor layer that forms a light emitting diode structure and has a major face and an end face inclined at an angle θ1 to the major face, and a reflector that is provided outside the end face with being opposed to the end face, and includes at least a portion inclined at an angle θ2 to the major face, the angle θ2 being smaller than the angle θ1.
摘要翻译：提供发光二极管。发光二极管包括形成发光二极管结构的半导体层，并且具有与主面成角度θ1倾斜的主面和端面，以及设置在主面外侧的反射器端面与端面相对，并且包括至少一个与主面成角度θ2倾斜的部分，角度θ2小于角度 1＆lt; 1＆gt;。

3. 发明申请

US20100289000A1 LIGHT-EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20100289000A1
公开(公告)日：2010-11-18
申请号：US12763364
申请日：2010-04-20
申请人： Kensuke Kojima
发明人： Kensuke Kojima
IPC分类号： H01L33/04 , H01L21/306
CPC分类号： H01L33/20 , H01L33/007 , H01L33/06 , H01L33/18 , H01L33/32
摘要： A manufacturing method of a light-emitting diode, includes the steps of: successively growing a first clad layer, an active layer and a second clad layer on a substrate; and patterning the first clad layer, the active layer and the second clad layer into a specified plane shape, and causing at least a part of an outer peripheral part of the active layer to protrude to an outside from at least one of the first clad layer and the second clad layer.
摘要翻译：一种发光二极管的制造方法，其特征在于，包括：在基板上依次生长第一覆盖层，有源层和第二覆盖层; 以及将所述第一覆盖层，所述有源层和所述第二覆盖层图案化为规定的平面形状，并且使所述有源层的外周部的至少一部分从所述第一覆盖层中的至少一个突出到外部和第二覆层。

4. 发明申请

US20120064420A1 POWER GENERATION SYSTEM 审中-公开
标题翻译：发电系统
公开(公告)号：US20120064420A1
公开(公告)日：2012-03-15
申请号：US13224537
申请日：2011-09-02
申请人： Akio Machida , Kensuke Kojima , Yuichi Ishida
发明人： Akio Machida , Kensuke Kojima , Yuichi Ishida
IPC分类号： H01M8/06 , F28D15/00 , B01D53/22 , F28F7/00
CPC分类号： B01D53/22 , B01D2256/12 , B01D2256/16 , H01M8/0656 , H01M14/005 , H01M2250/405 , Y02B90/16 , Y02E10/52 , Y02E60/364 , Y02E60/366
摘要： There is provided a power generation system capable of obtaining both of electrical energy and heat energy by utilizing light energy. The power generation system includes a gas generation section including one or more containers and producing gas by absorbing light energy, each of the containers enclosing an electrolytic solution and a plurality of semiconductor elements having photoelectric conversion function, a power generation section generating electrical energy by utilizing gas generated in the gas generation section; and a heat exchanger absorbing heat energy from the inside of the container.
摘要翻译：提供了能够通过利用光能来获得电能和热能两者的发电系统。发电系统包括气体发生部分，其包括一个或多个容器并通过吸收光能产生气体，每个容器包围电解液和具有光电转换功能的多个半导体元件，通过利用产生电能的发电部分在气体发生部产生的气体; 以及从容器的内部吸收热能的热交换器。

5. 发明申请

US20110175860A1 LIGHT-EMITTING DEVICE AND DISPLAY 有权
标题翻译：发光装置和显示器
公开(公告)号：US20110175860A1
公开(公告)日：2011-07-21
申请号：US12985079
申请日：2011-01-05
申请人： Kensuke Kojima
发明人： Kensuke Kojima
IPC分类号： G09G5/00 , H01L33/36
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/54
摘要： A light-emitting device includes: a semiconductor layer including a first conductive contact layer, a first conductive cladding layer, an active layer, a second conductive cladding layer, a second conductive contact layer and a resin block layer in this order; a first electrode in contact with the first conductive contact layer; and a second electrode in contact with the second conductive contact layer. The second conductive contact layer includes a first opening at least in a region facing the first electrode. Moreover, the resin block layer includes a plurality of second openings communicated with the first opening, and the first opening has an air gap.
摘要翻译：发光装置包括：依次包括第一导电接触层，第一导电覆层，有源层，第二导电覆层，第二导电接触层和树脂阻挡层的半导体层; 与所述第一导电接触层接触的第一电极; 以及与第二导电接触层接触的第二电极。第二导电接触层至少在面向第一电极的区域中包括第一开口。此外，树脂阻挡层包括与第一开口连通的多个第二开口，第一开口具有气隙。

6. 发明申请

US20100301380A1 LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：发光二极管及其制造方法
公开(公告)号：US20100301380A1
公开(公告)日：2010-12-02
申请号：US12775674
申请日：2010-05-07
申请人： Kensuke Kojima
发明人： Kensuke Kojima
IPC分类号： H01L33/30 , H01L21/20 , H01L33/28
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/16
摘要： A method for manufacturing a light-emitting diode includes the steps of: growing a light-emitting diode structure-forming semiconductor layer of a compound semiconductor having a zincblende crystal structure on a first substrate formed of a compound semiconductor having a zincblende crystal structure and that has a principal surface tilted in a [110] direction with respect to a (001) plane; bonding the first substrate to a second substrate on the side of the semiconductor layer; removing the first substrate so as to expose the semiconductor layer; forming an etching mask on the exposed surface of the semiconductor layer in a rectangular planar shape so that a longer side extends in a [110] or [−1-10] direction, and that a shorter side extends in a [−110] or [1-10] direction; and patterning the semiconductor layer by wet etching using the etching mask.
摘要翻译：一种制造发光二极管的方法包括以下步骤：在由具有锌辉石晶体结构的化合物半导体形成的第一衬底上生长具有锌辉晶体结构的化合物半导体的发光二极管结构形成半导体层，并且具有相对于（001）面在[110]方向上倾斜的主表面; 将所述第一衬底接合到所述半导体层侧的第二衬底; 去除所述第一衬底以暴露所述半导体层; 在半导体层的暴露表面上形成矩形平面形状的蚀刻掩模，使得较长边在[110]或[ - 10]方向上延伸，并且较短边在[-110]或方向; 并通过使用蚀刻掩模的湿蚀刻图案化半导体层。

7. 发明授权

US08344395B2 Light-emitting diode and manufacturing method thereof 失效
标题翻译：发光二极管及其制造方法
公开(公告)号：US08344395B2
公开(公告)日：2013-01-01
申请号：US12775674
申请日：2010-05-07
申请人： Kensuke Kojima
发明人： Kensuke Kojima
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/16
摘要： A method for manufacturing a light-emitting diode includes the steps of: growing a light-emitting diode structure-forming semiconductor layer of a compound semiconductor having a zincblende crystal structure on a first substrate formed of a compound semiconductor having a zincblende crystal structure and that has a principal surface tilted in a [110] direction with respect to a (001) plane; bonding the first substrate to a second substrate on the side of the semiconductor layer; removing the first substrate so as to expose the semiconductor layer; forming an etching mask on the exposed surface of the semiconductor layer in a rectangular planar shape so that a longer side extends in a [110] or [−1-10] direction, and that a shorter side extends in a [−110] or [1-10] direction; and patterning the semiconductor layer by wet etching using the etching mask.
摘要翻译：一种制造发光二极管的方法包括以下步骤：在由具有锌辉石晶体结构的化合物半导体形成的第一衬底上生长具有锌辉晶体结构的化合物半导体的发光二极管结构形成半导体层，并且具有相对于（001）面在[110]方向上倾斜的主表面; 将所述第一衬底接合到所述半导体层侧的第二衬底; 去除所述第一衬底以暴露所述半导体层; 在半导体层的暴露表面上形成矩形平面形状的蚀刻掩模，使得较长边在[110]或[ - 10]方向上延伸，并且较短边在[-110]或方向; 并通过使用蚀刻掩模的湿蚀刻图案化半导体层。

8. 发明授权

US08314488B2 Sample liquid supply container, sample liquid supply container set, and microchip set 有权
标题翻译：样品供液容器，样品液体供应容器组和微芯片组
公开(公告)号：US08314488B2
公开(公告)日：2012-11-20
申请号：US13149147
申请日：2011-05-31
申请人： Kensuke Kojima
发明人： Kensuke Kojima
IPC分类号： H01L23/06
CPC分类号： B01L3/502 , B01L3/502715 , B01L2200/027 , B01L2200/0642 , B01L2200/082 , B01L2200/10 , B01L2300/044 , B01L2300/0816 , B01L2300/0854 , B01L2300/088 , B01L2400/049
摘要： A sample liquid supply container is disclosed. The sample liquid supply container includes a first region which is depressurized therein and is hermetically sealed, a second region which is able to receive a liquid therein, a first penetration portion, in which an interior of the first region is punctured by a hollow needle from outside, and a second penetration portion, in which an interior of the second region is punctured by the hollow needle inserted into the first penetration portion and reaches inside the first region.
摘要翻译：公开了一种样品供液容器。样品液体供应容器包括在其中被减压并被气密密封的第一区域，能够在其中容纳液体的第二区域，第一穿透部分，第一区域的内部被中空针刺穿外部和第二穿透部分，其中第二区域的内部被插入到第一穿透部分中并到达第一区域内部的中空针刺穿。

9. 发明授权

US08294175B2 Light-emitting device and display 有权
标题翻译：发光装置和显示器
公开(公告)号：US08294175B2
公开(公告)日：2012-10-23
申请号：US12985079
申请日：2011-01-05
申请人： Kensuke Kojima
发明人： Kensuke Kojima
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/54
摘要： A light-emitting device includes: a semiconductor layer including a first conductive contact layer, a first conductive cladding layer, an active layer, a second conductive cladding layer, a second conductive contact layer and a resin block layer in this order; a first electrode in contact with the first conductive contact layer; and a second electrode in contact with the second conductive contact layer. The second conductive contact layer includes a first opening at least in a region facing the first electrode. Moreover, the resin block layer includes a plurality of second openings communicated with the first opening, and the first opening has an air gap.
摘要翻译：发光装置包括：依次包括第一导电接触层，第一导电覆层，有源层，第二导电覆层，第二导电接触层和树脂阻挡层的半导体层; 与所述第一导电接触层接触的第一电极; 以及与第二导电接触层接触的第二电极。第二导电接触层至少在面向第一电极的区域中包括第一开口。此外，树脂阻挡层包括与第一开口连通的多个第二开口，第一开口具有气隙。

10. 发明授权

US08222056B2 Manufacturing method of light-emitting diode 有权
标题翻译：发光二极管的制造方法
公开(公告)号：US08222056B2
公开(公告)日：2012-07-17
申请号：US12763364
申请日：2010-04-20
申请人： Kensuke Kojima
发明人： Kensuke Kojima
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/007 , H01L33/06 , H01L33/18 , H01L33/32
摘要： A manufacturing method of a light-emitting diode, includes the steps of: successively growing a first clad layer, an active layer and a second clad layer on a substrate; and patterning the first clad layer, the active layer and the second clad layer into a specified plane shape, and causing at least a part of an outer peripheral part of the active layer to protrude to an outside from at least one of the first clad layer and the second clad layer.
摘要翻译：一种发光二极管的制造方法，其特征在于，包括：在基板上依次生长第一覆盖层，有源层和第二覆盖层; 以及将所述第一覆盖层，所述有源层和所述第二覆盖层图案化为规定的平面形状，并且使所述有源层的外周部的至少一部分从所述第一覆盖层中的至少一个突出到外部和第二覆层。

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