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1. 发明申请

US20090126903A1 HEAT TRANSFER MEMBER, CONVEX STRUCTURAL MEMBER, ELECTRONIC APPARATUS, AND ELECTRIC PRODUCT 审中-公开
标题翻译：热转印构件，导电结构构件，电子设备和电气产品
公开(公告)号：US20090126903A1
公开(公告)日：2009-05-21
申请号：US11996580
申请日：2007-04-18
申请人： Akira Kuibira , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata
发明人： Akira Kuibira , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata
IPC分类号： F28F9/00
CPC分类号： H05K7/20963 , F28F3/048 , F28F13/18 , F28F19/02 , H01L23/3677 , H01L23/3735 , H01L23/433 , H01L2924/0002 , H01L2924/00
摘要： A heat transfer member (20) has a support (1), and columnar bodies (2) all or some of which are disposed so as to be inclined at an angle with respect to the support (1). The columnar bodies (2) are in contact with a contacted body (21), and the columnar bodies (2) elastically deform and/or plastically deform along the shape of the contact surface with the contacted body (21) to thereby make direct contact along the wavy and rough irregularities of the contacted body (21), and to cause heat to move through the columnar bodies (2).
摘要翻译：传热构件（20）具有支撑件（1），并且柱状体（2）全部或部分设置成相对于支撑件（1）倾斜一定角度。柱状体（2）与接触体（21）接触，并且柱状体（2）沿着与接触体（21）的接触表面的形状弹性变形和/或塑性变形，从而直接接触沿着接触体（21）的波浪和粗糙的不规则，并且使热量移动通过柱状体（2）。

2. 发明授权

US07361230B2 Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US07361230B2
公开(公告)日：2008-04-22
申请号：US10119955
申请日：2002-04-09
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01L21/68714 , Y10T279/23
摘要： In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrate is in contact with a chamber, it is supported by the chamber. Thus, a substrate processing apparatus can be provided which improves thermal uniformity, reduces cost, is suitable for size reduction of the apparatus and which can ease restrictions in mounting a power supply conductive member or the like.
摘要翻译：在基板处理装置中，用于安装基板的陶瓷模块具有具有电路和陶瓷基体的平板部分，并且作为安装基板的表面以外的平板部分的至少一部分表面，与腔室接触，它由腔室支撑。因此，可以提供提高热均匀性，降低成本的衬底处理装置，适合于装置的尺寸减小，并且可以减轻安装电源导电构件等的限制。

3. 发明授权

US07268321B2 Wafer holder and semiconductor manufacturing apparatus 有权
标题翻译：晶圆支架和半导体制造装置
公开(公告)号：US07268321B2
公开(公告)日：2007-09-11
申请号：US10498460
申请日：2003-03-19
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Manabu Hashikura
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Manabu Hashikura
IPC分类号： H05B3/68 , C23C16/00
CPC分类号： H01L21/68757 , H01L21/67103 , H01L21/67248
摘要： A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing larger-diameter wafers is made available. In a wafer holder (1) including within a ceramic substrate (2) a resistive heating element (3) or the like and being furnished with a lead (4) penetrating a reaction chamber (6), the lead (4) is housed in a tubular guide member (5), and an interval between the guide member (5) and the reaction chamber (6) as well as the interior of the guide member (5) are hermetically sealed. The guide member (5) and the ceramic substrate (2) are not joined together, and in the interior of the guide member (5) in which the inside is hermetically sealed, the atmosphere toward the ceramic substrate (2) is preferably substantially the same as the atmosphere in the reaction chamber (6).
摘要翻译：提供了一种晶片保持器，其中支撑和加热晶片中的局部热辐射保持在控制之下，并且晶片保持表面的温度均匀性得到增强，并且通过利用晶片保持器，适于处理较大直径晶片的半导体制造装置为提供。在陶瓷基板（2）内具有电阻加热元件（3）等并配有穿过反应室（6）的引线（4）的晶片保持器（1）中，引线（4）容纳在管状引导构件（5）以及引导构件（5）和反应室（6）之间的间隔以及引导构件（5）的内部被气密地密封。引导构件（5）和陶瓷基板（2）不接合在一起，并且在内部被密封的引导构件（5）的内部，朝向陶瓷基板（2）的气氛优选为与反应室（6）中的气氛相同。

4. 发明授权

US07211153B2 Ceramic joined body, substrate holding structure and substrate processing apparatus 有权
标题翻译：陶瓷接合体，基板保持结构和基板处理装置
公开(公告)号：US07211153B2
公开(公告)日：2007-05-01
申请号：US10276394
申请日：2002-04-11
申请人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/6833 , B32B18/00 , B32B2309/022 , B32B2315/02 , C04B35/44 , C04B35/581 , C04B37/005 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3865 , C04B2235/96 , C04B2237/064 , C04B2237/08 , Y10T279/23
摘要： A substrate holding structure having excellent corrosion resistance and airtightness, excellent dimensional accuracy and sufficient durability when mechanical or thermal stress is applied thereto is obtained. A holder (1) serving as the substrate holding structure includes a ceramic base (2) for holding a substrate, a protective cylinder (7) joined to the ceramic base (2) and a joining layer (8) positioned therebetween for joining the ceramic base (2) and the protective cylinder (7) to each other. The joining layer (8) contains at least 2 mass % and not more than 70 mass % of a rare earth oxide, at least 10 mass % and not more than 78 mass % of aluminum oxide, and at least 2 mass % and not more than 50 mass % of aluminum nitride. The rare earth oxide or the aluminum oxide has the largest proportional content among the aforementioned three types of components in the joining layer (8).
摘要翻译：获得具有优异的耐腐蚀性和气密性的基板保持结构，在施加机械或热应力时具有优异的尺寸精度和足够的耐久性。用作基板保持结构的保持器（1）包括用于保持基板的陶瓷基体（2），与陶瓷基体（2）接合的保护筒（7）和位于其间的接合层（8），用于将陶瓷基座（2）和保护筒（7）彼此连接。接合层（8）含有2质量％以上且70质量％以下的稀土类氧化物，至少10质量％以上且78质量％以下的氧化铝，至少2质量％以上超过50质量％的氮化铝。在接合层（8）中，上述三种成分中的稀土氧化物或氧化铝的比例含量最大。

5. 发明申请

US20050263516A1 Heating device 审中-公开
标题翻译：加热装置
公开(公告)号：US20050263516A1
公开(公告)日：2005-12-01
申请号：US11140668
申请日：2005-05-27
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
IPC分类号： H05B3/20 , F27B17/00 , F27D11/00 , F27D99/00 , H01L21/00 , H01L21/02 , H01L21/66 , H01L21/68 , H01L21/683 , H05B3/06 , H05B3/10 , H05B3/74
CPC分类号： F27D99/0006 , F27B17/0025 , F27D2099/0008 , H01L21/67103
摘要： The present invention provides a heating device which is rigid with little likelihood of warping. The workpiece mounting surface has a high thermal conductivity, and there is improved heat uniformity, and rapid cooling is possible. The heating device of the present invention comprises: a mounting part for mounting the workpiece; a heating part which has a resistance heating element and which heats the mounting part; and a support part which supports the mounting part and heating part. The Young's modulus for each of the mounting part and support part is 100 GPa or greater. By having a Young's modulus of 100 GPa or greater, even if the mounting part is thin, there is little deformation when pressed by a probe card.
摘要翻译：本发明提供一种加热装置，该加热装置具有几乎不变形的刚性。工件安装面具有高导热性，并且具有改善的热均匀性，并且可以进行快速冷却。本发明的加热装置包括：用于安装工件的安装部件; 加热部，其具有电阻加热元件，并加热所述安装部; 以及支撑安装部和加热部的支撑部。每个安装部分和支撑部分的杨氏模量为100GPa或更大。通过具有100GPa以上的杨氏模量，即使安装部分较薄，当由探针卡按压时几乎没有变形。

6. 发明授权

US06946625B2 Ceramic susceptor 失效
标题翻译：陶瓷感受器
公开(公告)号：US06946625B2
公开(公告)日：2005-09-20
申请号：US10711064
申请日：2004-08-20
申请人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H05B3/20 , C23C16/46 , H01L21/00 , H05B3/14 , H05B3/26 , H05B3/68
CPC分类号： H01L21/67103 , H05B3/143 , H05B3/265
摘要： Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ±0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ±1.0% or less. Preferable is a superior isothermal rating of ±0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ±0.5%.
摘要翻译：其晶片保持面具有优异的等温性能，适用于半导体制造装置和液晶制造装置的陶瓷基座。在板状烧结陶瓷体1中，形成电阻加热元件2。烧结陶瓷体外周边缘1a和电阻加热元件本体外缘边缘2a之间的回拉长度L的波动在±0.8％以内，而晶片保持面的整个表面的等温额定值为±1.0 ％或更少。优选的等温额定值为±0.5％以下，通过使拉回长度L的波动在±0.5％以内可以实现。

7. 发明授权

US06664515B2 Circuit pattern of resistance heating elements and substrate-treating apparatus incorporating the pattern 失效
公开(公告)号：US06664515B2
公开(公告)日：2003-12-16
申请号：US10119778
申请日：2002-04-11
申请人： Masuhiro Natsuhara , Masashi Narita , Hirohiko Nakata , Akira Kuibira
发明人： Masuhiro Natsuhara , Masashi Narita , Hirohiko Nakata , Akira Kuibira
IPC分类号： H05B368
CPC分类号： H01L21/67103 , H05B3/143 , H05B3/283
摘要： A technology that achieves a highly uniform temperature distribution on the surface of large-area semiconductor wafers and substrates for liquid crystals without prior measurement of the resistance-heating-element circuit and subsequent adjustment of the value of resistance. At least one current-receiving point 4 and at least one current-releasing point 5 are provided at the central portion of an insulating substrate 1. One or more resistance-heating-element circuits 2 are embedded in the insulating substrate spirally or pseudospirally from the central portion including the current-receiving point 4 to the peripheral portion of the insulating substrate 1. All the circuits merge with one another at the outermost portion. One or more resistance-heating-element circuits are separated at the outermost portion of the resistance-heating-element circuits and are formed spirally or pseudospirally from the outermost portion to the central portion including the current-releasing point 5.

8. 发明申请

US20070095291A9 Holder for Use in Semiconductor or Liquid-Crystal Manufacturing Device and Semiconductor or Liquid-Crystal Manufacturing Device in Which the Holder Is Installed 有权
标题翻译：用于半导体或液晶制造装置的支架，以及安装支架的半导体或液晶制造装置
公开(公告)号：US20070095291A9
公开(公告)日：2007-05-03
申请号：US10709889
申请日：2004-06-03
申请人： Manabu Hashikura , Hirohiko Nakata , Akira Kuibira , Masuhiro Natsuhara
发明人： Manabu Hashikura , Hirohiko Nakata , Akira Kuibira , Masuhiro Natsuhara
IPC分类号： C23C16/00
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/4586 , H01L21/68785 , H05B3/12 , H05B3/143
摘要： Affords a holder for use in semiconductor or liquid-crystal manufacturing devices—as well as semiconductor or liquid-crystal manufacturing devices in which the holder is installed—in which temperature uniformity in the processed-object retaining face is heightened. Configuring the holder with, furnished atop a ceramic susceptor, a composite of a ceramic and a metal improves the temperature uniformity in the holder's processed-object retaining face and makes for curtailing the generation of particulates and other contaminants. In addition, putting a coating on at least the retaining face improves the durability of the holder. Installing a holder of this sort in a semiconductor manufacturing device or a liquid-crystal manufacturing device contributes to making available semiconductor or liquid-crystal manufacturing devices whose productivity and throughput are excellent.
摘要翻译：提供用于半导体或液晶制造装置的保持器以及其中安装保持器的半导体或液晶制造装置，其中加工对象保持面的温度均匀性提高。配置陶瓷基座上的支架，陶瓷和金属的复合材料，可提高保持器的加工对象保持面的温度均匀性，并减少微粒和其他污染物的产生。另外，至少在保持面上涂上涂层，提高了保持体的耐久性。在半导体制造装置或液晶制造装置中安装这样的支架有助于制造生产率和生产率优异的半导体或液晶制造装置。

9. 发明申请

US20070044718A1 Wafer Holder and Semiconductor Manufacturing Apparatus 失效
标题翻译：晶圆座和半导体制造设备
公开(公告)号：US20070044718A1
公开(公告)日：2007-03-01
申请号：US11551726
申请日：2006-10-23
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Manabu Hashikura
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Manabu Hashikura
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/68757 , H01L21/67103 , H01L21/67248
摘要： A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing larger-diameter wafers is made available. In a wafer holder (1) including within a ceramic substrate (2) a resistive heating element (3) or the like and being furnished with a lead (4) penetrating a reaction chamber (6), the lead (4) is housed in a tubular guide member (5), and an interval between the guide member (5) and the reaction chamber (6) as well as the interior of the guide member (5) are hermetically sealed. The guide member (5) and the ceramic substrate (2) are not joined together, and in the interior of the guide member (5) in which the inside is hermetically sealed, the atmosphere toward the ceramic substrate (2) is preferably substantially the same as the atmosphere in the reaction chamber (6).
摘要翻译：提供了一种晶片保持器，其中支撑和加热晶片中的局部热辐射保持在控制之下，并且晶片保持表面的温度均匀性得到增强，并且通过利用晶片保持器，适于处理较大直径晶片的半导体制造装置为提供。在陶瓷基板（2）内具有电阻加热元件（3）等并配有穿过反应室（6）的引线（4）的晶片保持器（1）中，引线（4）容纳在管状引导构件（5）以及引导构件（5）和反应室（6）之间的间隔以及引导构件（5）的内部被气密地密封。引导构件（5）和陶瓷基板（2）不接合在一起，并且在内部被密封的引导构件（5）的内部，朝向陶瓷基板（2）的气氛优选为与反应室（6）中的气氛相同。

10. 发明申请

US20060102613A1 Semiconductor fabrication device heater and heating device equipped with the same 审中-公开
标题翻译：半导体制造装置加热器和加热装置配备相同
公开(公告)号：US20060102613A1
公开(公告)日：2006-05-18
申请号：US11256524
申请日：2005-10-20
申请人： Akira Kuibira , Akira Mikumo , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Akira Kuibira , Akira Mikumo , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H05B3/68
CPC分类号： H01L21/67103 , H01L21/67109 , H05B3/12 , H05B3/262
摘要： A heating body and a device equipped with the same provide greater uniformity in temperature distribution between the start of heating and the end of cooling. A semiconductor fabrication device heating body includes a base having a heating surface upon which an object is mounted or positioned at a fixed distance away and is heated, and a resistance heating body. All or part of the base of the heating body has a thermal capacity per unit volume of at least 2.0 J/K·cm3 and a thermal conductivity of at least 50 W/mK.
摘要翻译：加热体和配备有加热体的装置在加热开始和冷却结束之间提供更高的温度分布均匀性。半导体制造装置加热体包括具有加热面的基座，物体被安装或定位在固定距离处并被加热，基座具有电阻加热体。加热体的全部或部分基体的单位体积的热容量至少为2.0J / K.cm 3，热导率为至少50W / m·K。

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