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    • 9. 发明授权
    • Method of manufacturing a field effect transistor
    • 制造场效应晶体管的方法
    • US06806153B2
    • 2004-10-19
    • US10462893
    • 2003-06-17
    • Karsten WieczorekManfred HorstmannThomas Feudel
    • Karsten WieczorekManfred HorstmannThomas Feudel
    • H01L21336
    • H01L29/6659H01L21/2022H01L21/26506H01L21/26513
    • The present invention allows the manufacturing of field effect transistors with reduced thermal budget. A first amorphized region and a second amorphized region are formed in a substrate adjacent to the gate electrode by implanting ions of a non-doping element, the presence of which does not significantly alter the conductive properties of the substrate. The formation of the amorphized regions may be performed before or after the formation of a source region, a drain region, an extended source region and an extended drain region. The substrate is annealed to achieve solid phase epitaxial regrowth of the amorphized regions and to activate dopants in the source region, the drain region, the extended source region and the extended drain region.
    • 本发明允许制造具有降低的热预算的场效应晶体管。 第一非晶化区域和第二非晶区域通过注入非掺杂元素的离子形成在与栅电极相邻的衬底中,其不存在不会显着地改变衬底的导电性能。 非晶化区域的形成可以在形成源极区域,漏极区域,扩展源极区域和延伸的漏极区域之前或之后进行。 将衬底退火以实现非晶化​​区域的固相外延再生长并激活源极区域,漏极区域,扩展源极区域和延伸漏极区域中的掺杂剂。