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1. 发明授权

US07005372B2 Deposition of tungsten nitride 有权
标题翻译：沉积氮化钨
公开(公告)号：US07005372B2
公开(公告)日：2006-02-28
申请号：US10690492
申请日：2003-10-20
申请人： Karl B. Levy , Junghwan Sung , Kaihan A. Ashtiani , James A. Fair , Joshua Collins , Juwen Gao
发明人： Karl B. Levy , Junghwan Sung , Kaihan A. Ashtiani , James A. Fair , Joshua Collins , Juwen Gao
IPC分类号： H01L21/4763
CPC分类号： C23C16/4554 , C23C16/0272 , C23C16/34 , C23C16/45531 , C23C16/45534 , H01L21/28562 , H01L21/76843
摘要： Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.
摘要翻译：描述了用于沉积氮化钨层的方法。该方法使用精心控制的沉积技术如脉冲成核层（PNL）形成氮化钨层。最初，在衬底表面上形成钨层。然后将钨层暴露于氮化剂以形成氮化钨层。形成相对较厚层的方法涉及与还原剂钨前体和氮化剂接触的重复循环。在一些情况下，该循环还可以包括与诸如膦或胂的掺杂剂前体接触。

2. 发明授权

US07691749B2 Deposition of tungsten nitride 有权
标题翻译：沉积氮化钨
公开(公告)号：US07691749B2
公开(公告)日：2010-04-06
申请号：US11305368
申请日：2005-12-16
申请人： Karl B. Levy , Junghwan Sung , Kaihan A. Ashtiani , James A. Fair , Joshua Collins , Juwen Gao
发明人： Karl B. Levy , Junghwan Sung , Kaihan A. Ashtiani , James A. Fair , Joshua Collins , Juwen Gao
IPC分类号： H01L21/44
CPC分类号： C23C16/4554 , C23C16/0272 , C23C16/34 , C23C16/45531 , C23C16/45534 , H01L21/28562 , H01L21/76843
摘要： Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.
摘要翻译：描述了用于沉积氮化钨层的方法。该方法使用精心控制的沉积技术如脉冲成核层（PNL）形成氮化钨层。最初，在衬底表面上形成钨层。然后将钨层暴露于氮化剂以形成氮化钨层。形成相对较厚层的方法涉及与还原剂钨前体和氮化剂接触的重复循环。在一些情况下，该循环还可以包括与诸如膦或胂的掺杂剂前体接触。

3. 发明授权

US07262125B2 Method of forming low-resistivity tungsten interconnects 有权
标题翻译：形成低电阻钨互连的方法
公开(公告)号：US07262125B2
公开(公告)日：2007-08-28
申请号：US10815560
申请日：2004-03-31
申请人： Panya Wongsenakhum , Aaron R. Fellis , Kaihan A. Ashtiani , Karl B. Levy , Juwen Gao , Joshua Collins , Junghwan Sung , Lana Hiului Chan
发明人： Panya Wongsenakhum , Aaron R. Fellis , Kaihan A. Ashtiani , Karl B. Levy , Juwen Gao , Joshua Collins , Junghwan Sung , Lana Hiului Chan
IPC分类号： H01L21/4763
CPC分类号： C23C16/45523 , C23C16/0281 , C23C16/08 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.
摘要翻译：提供了在基板上制备低电阻率钨膜的方法和装置。方法包括使用脉冲成核层（PNL）技术在衬底上形成钨成核层并在其上沉积体钨层。用于形成钨成核层的方法包括使用含硼物质，含钨前体和任选的硅烷。所描述的方法对于需要薄的低电阻率薄膜（例如互连应用）的应用特别有用。

4. 发明授权

US07141494B2 Method for reducing tungsten film roughness and improving step coverage 有权
标题翻译：降低钨膜粗糙度和提高台阶覆盖率的方法
公开(公告)号：US07141494B2
公开(公告)日：2006-11-28
申请号：US10649351
申请日：2003-08-26
申请人： Sang-Hyeob Lee , Karl B. Levy , Aaron R. Fellis , Panya Wongsenakhum , Juwen Gao , Joshua Collins , Kaihan A. Ashtiani , Junghwan Sung , Lana Hiului Chan
发明人： Sang-Hyeob Lee , Karl B. Levy , Aaron R. Fellis , Panya Wongsenakhum , Juwen Gao , Joshua Collins , Kaihan A. Ashtiani , Junghwan Sung , Lana Hiului Chan
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28562 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877 , Y10S438/902
摘要： A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
摘要翻译：通过交替地向该表面提供还原气体和含钨气体，在半导体衬底的表面上形成钨成核膜。该方法的每个循环提供了一个或多个钨膜的单层。该膜是保形的，并且具有改进的台阶覆盖率，即使是高纵横比接触孔。

5. 发明申请

US20060094238A1 Deposition of tungsten nitride 有权
公开(公告)号：US20060094238A1
公开(公告)日：2006-05-04
申请号：US11305368
申请日：2005-12-16
申请人： Karl Levy , Junghwan Sung , Kaihan Ashtiani , James Fair , Joshua Collins , Juwen Gao
发明人： Karl Levy , Junghwan Sung , Kaihan Ashtiani , James Fair , Joshua Collins , Juwen Gao
IPC分类号： H01L21/44
CPC分类号： C23C16/4554 , C23C16/0272 , C23C16/34 , C23C16/45531 , C23C16/45534 , H01L21/28562 , H01L21/76843
摘要： Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.

6. 发明申请

US20050031786A1 Method for reducing tungsten film roughness and improving step coverage 有权
标题翻译：降低钨膜粗糙度和提高台阶覆盖率的方法
公开(公告)号：US20050031786A1
公开(公告)日：2005-02-10
申请号：US10649351
申请日：2003-08-26
申请人： Sang-Hyeob Lee , Karl Levy , Aaron Fellis , Panya Wongsenakhum , Juwen Gao , Joshua Collins , Kaihan Ashtiani , Junghwan Sung , Lana Chan
发明人： Sang-Hyeob Lee , Karl Levy , Aaron Fellis , Panya Wongsenakhum , Juwen Gao , Joshua Collins , Kaihan Ashtiani , Junghwan Sung , Lana Chan
IPC分类号： H01L21/283 , H01L21/285 , H01L21/768 , C23C16/00
CPC分类号： H01L21/28562 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877 , Y10S438/902
摘要： A tungsten nucleation film is formed on a surface of a semiconductor substrate by alternatively providing to that surface, reducing gases and tungsten-containing gases. Each cycle of the method provides for one or more monolayers of the tungsten film. The film is conformal and has improved step coverage, even for a high aspect ratio contact hole.
摘要翻译：通过交替地向该表面提供还原气体和含钨气体，在半导体衬底的表面上形成钨成核膜。该方法的每个循环提供了一个或多个钨膜的单层。该膜是保形的，并且具有改进的台阶覆盖率，即使是高纵横比接触孔。

7. 发明申请

US20080045010A1 Reducing silicon attack and improving resistivity of tungsten nitride film 有权
标题翻译：减少硅侵蚀并提高氮化钨膜的电阻率
公开(公告)号：US20080045010A1
公开(公告)日：2008-02-21
申请号：US11349035
申请日：2006-02-06
申请人： Panya Wongsenakhum , Juwen Gao , Joshua Collins
发明人： Panya Wongsenakhum , Juwen Gao , Joshua Collins
IPC分类号： H01L21/44 , H01L29/40
CPC分类号： H01L21/76846 , H01L21/28556
摘要： The present invention provides improved methods of depositing tungsten-containing films on substrates, particularly on silicon substrates. The methods involve depositing an interfacial or “flash” layer of tungsten on the silicon prior to deposition of tungsten nitride. The tungsten flash layer is typically deposited by a CVD reaction of a tungsten precursor and a reducing agent. According to various embodiments, the tungsten flash layer may be deposited with a high reducing agent to tungsten-precursor ratio and/or at low temperature to reduce attack by the tungsten precursor. In many cases, the substrate is a semiconductor wafer or a partially fabricated semiconductor wafer. Applications include depositing tungsten nitride as (or as part of) a diffusion barrier and/or adhesion layer for tungsten contacts.
摘要翻译：本发明提供了在基底上，特别是在硅衬底上沉积含钨膜的改进方法。所述方法包括在沉积氮化钨之前在硅上沉积界面或“闪光”层的钨。钨闪光层通常通过钨前体和还原剂的CVD反应沉积。根据各种实施例，可以用高还原剂将钨闪光层沉积至钨 - 前体比和/或在低温下以减少钨前体的侵蚀。在许多情况下，衬底是半导体晶片或部分制造的半导体晶片。应用包括将钨氮化物作为钨接触的（或作为）扩散阻挡层和/或粘附层的一部分沉积。

8. 发明授权

US07754604B2 Reducing silicon attack and improving resistivity of tungsten nitride film 有权
标题翻译：减少硅侵蚀并提高氮化钨膜的电阻率
公开(公告)号：US07754604B2
公开(公告)日：2010-07-13
申请号：US11349035
申请日：2006-02-06
申请人： Panya Wongsenakhum , Juwen Gao , Joshua Collins
发明人： Panya Wongsenakhum , Juwen Gao , Joshua Collins
IPC分类号： H01L21/443
CPC分类号： H01L21/76846 , H01L21/28556
摘要： The present invention provides improved methods of depositing tungsten-containing films on substrates, particularly on silicon substrates. The methods involve depositing an interfacial or “flash” layer of tungsten on the silicon prior to deposition of tungsten nitride. The tungsten flash layer is typically deposited by a CVD reaction of a tungsten precursor and a reducing agent. According to various embodiments, the tungsten flash layer may be deposited with a high reducing agent to tungsten-precursor ratio and/or at low temperature to reduce attack by the tungsten precursor. In many cases, the substrate is a semiconductor wafer or a partially fabricated semiconductor wafer. Applications include depositing tungsten nitride as (or as part of) a diffusion barrier and/or adhesion layer for tungsten contacts.
摘要翻译：本发明提供了在基底上，特别是在硅衬底上沉积含钨膜的改进方法。所述方法包括在沉积氮化钨之前在硅上沉积界面或“闪光”层的钨。钨闪光层通常通过钨前体和还原剂的CVD反应沉积。根据各种实施例，可以用高还原剂将钨闪光层沉积至钨 - 前体比和/或在低温下以减少钨前体的侵蚀。在许多情况下，衬底是半导体晶片或部分制造的半导体晶片。应用包括将钨氮化物作为钨接触的（或作为）扩散阻挡层和/或粘附层的一部分沉积。

9. 发明申请

US20120080793A1 SUBTRACTIVE PATTERNING TO DEFINE CIRCUIT COMPONENTS 有权
标题翻译：定义电路组件的描述性方案
公开(公告)号：US20120080793A1
公开(公告)日：2012-04-05
申请号：US13251446
申请日：2011-10-03
申请人： Michal Danek , Juwen Gao , Ronald A. Powell , Aaron R. Fellis
发明人： Michal Danek , Juwen Gao , Ronald A. Powell , Aaron R. Fellis
IPC分类号： H01L23/48 , H01L21/28 , H01L21/768
CPC分类号： H01L21/76876 , H01L21/28562 , H01L21/76885 , H01L21/76895 , H01L23/53261 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Certain embodiments pertain to local interconnects formed by subtractive patterning of blanket layer of tungsten or other conductive material. The grain sizes of tungsten or other deposited metal can be grown to relatively large dimensions, which results in increased electrical conductivity due to, e.g., reduced electron scattering at grain boundaries as electrons travel from one grain to the next during conduction.
摘要翻译：某些实施例涉及由钨或其它导电材料的覆盖层的消减图案形成的局部互连。钨或其他沉积金属的晶粒尺寸可以生长到相对较大的尺寸，这导致增加的导电性，这是由于例如当电子在传导期间从一个晶粒移动到下一个晶粒时在晶界处的电子散射减小。

10. 发明授权

US07655567B1 Methods for improving uniformity and resistivity of thin tungsten films 有权
标题翻译：改善薄钨膜的均匀性和电阻率的方法
公开(公告)号：US07655567B1
公开(公告)日：2010-02-02
申请号：US11782570
申请日：2007-07-24
申请人： Juwen Gao , Lana Hiului Chan , Panya Wongsenakhum
发明人： Juwen Gao , Lana Hiului Chan , Panya Wongsenakhum
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/76876 , C23C16/0281 , C23C16/08 , H01L21/28556 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： The methods described herein relate to deposition of low resistivity, highly conformal tungsten nucleation layers. These layers serve as a seed layers for the deposition of a tungsten bulk layer. The methods are particularly useful for tungsten plug fill in which tungsten is deposited in high aspect ratio features. The methods involve depositing a nucleation layer by a combined PNL and CVD process. The substrate is first exposed to one or more cycles of sequential pulses of a reducing agent and a tungsten precursor in a PNL process. The nucleation layer is then completed by simultaneous exposure of the substrate to a reducing agent and tungsten precursor in a chemical vapor deposition process. In certain embodiments, the process is performed without the use of a borane as a reducing agent.
摘要翻译：本文所述的方法涉及沉积低电阻率，高保形钨成核层。这些层用作沉积钨体层的种子层。该方法对于钨插头填充特别有用，其中以高纵横比特征沉积钨。所述方法包括通过组合的PNL和CVD工艺沉积成核层。首先在PNL工艺中将衬底暴露于还原剂和钨前体的一个或多个循环的顺序脉冲。然后通过在化学气相沉积工艺中同时将衬底暴露于还原剂和钨前体来完成成核层。在某些实施方案中，该方法在不使用硼烷作为还原剂的情况下进行。

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