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    • 10. 发明授权
    • Self-repairing built-in self test for linked list memories
    • 自我修复内置自检用于链表记忆
    • US06781898B2
    • 2004-08-24
    • US10283134
    • 2002-10-30
    • Hyung Won KimChuen-Shen Shung
    • Hyung Won KimChuen-Shen Shung
    • G11C700
    • G11C29/76
    • One of a linked list memories is selected as a defect marking memory and faults in rows of the defect marking memory are detected. Row addresses having at least one fault in defect address registers are stored. Faults in rows of other linked list memories are detected, where the other linked list memories are the linked list memories other than the defect marking memory and a marking code is stored for each row address of the other linked list memories in the defect marking memory, where a particular marking code indicates whether a particular row address has at least one fault. The defect address registers and the defect marking memory are searched when addresses of the linked list memories are linked and row addresses indicated as having at least one fault are skipped in the linking process.
    • 选择链表列表存储器中的一个作为缺陷标记存储器,并且检测缺陷标记存储器的行中的故障。 存储在缺陷地址寄存器中具有至少一个故障的行地址。 检测其他链表的存储器的行中的错误,其中链表列表存储器是除了缺陷标记存储器之外的链表列表存储器,并且存储缺陷标记存储器中其他链表的存储器的每个行地址的标记代码, 其中特定标记代码指示特定行地址是否具有至少一个故障。 当链接列表存储器的地址被链接并且在链接过程中跳过指示为具有至少一个故障的行地址时,搜索缺陷地址寄存器和缺陷标记存储器。