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1. 发明授权

US4310641A Heat resistant photoresist composition and process for preparing the same 失效
标题翻译：耐热光致抗蚀剂组合物及其制备方法
公开(公告)号：US4310641A
公开(公告)日：1982-01-12
申请号：US062800
申请日：1979-08-01
申请人： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura , Muneaki Kimura
发明人： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura , Muneaki Kimura
IPC分类号： C08G73/14 , G03F7/037 , G03F7/038 , C08F283/04 , C08G63/76
CPC分类号： C08G73/14 , G03F7/037 , G03F7/0387
摘要： An organic polar solvent-soluble aromatic polyamide-imide having therein aromatic nuclei linked at their respective 1 - and 3 -positions and having therein amide linkages and terminal groups partially substituted with cinnamate groups is found to impart excellent heat resistance and insulating property to a photoresist composition produced therefrom.
摘要翻译：其中具有其各自的1位和3位上具有酰胺键和部分被肉桂酸酯基取代的末端基团的芳族核的有机极性溶剂可溶性芳族聚酰胺 - 酰亚胺被发现赋予光致抗蚀剂优异的耐热性和绝缘性由其制备的组合物。

2. 发明授权

US4180404A Heat resistant photoresist composition and process for preparing the same 失效
标题翻译：耐热光致抗蚀剂组合物及其制备方法
公开(公告)号：US4180404A
公开(公告)日：1979-12-25
申请号：US961534
申请日：1978-11-16
申请人： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura , Muneaki Kimura
发明人： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura , Muneaki Kimura
IPC分类号： C08G73/14 , G03F7/037 , G03F7/038 , G03C1/72 , C08G18/00
CPC分类号： C08G73/14 , G03F7/037 , G03F7/0387
摘要： An organic polar solvent-soluble aromatic polyamide-imide having therein aromatic nuclei linked at their respective 1- and 3- positions and having therein amide linkages and terminal groups partially substituted with cinnamate groups is found to impart excellent heat resistance and insulating property to a photoresist composition produced therefrom.
摘要翻译：其中具有其各自的1-和3-位上具有酰胺键和部分被肉桂酸酯基取代的末端基团的芳族核的有机极性溶剂可溶性芳族聚酰胺 - 酰亚胺被发现赋予光致抗蚀剂优异的耐热性和绝缘性由其制备的组合物。

3. 发明授权

US4377652A Polyamide-imide compositions and articles for electrical use prepared therefrom 失效
标题翻译：聚酰胺 - 酰亚胺组合物和由其制备的电用制品
公开(公告)号：US4377652A
公开(公告)日：1983-03-22
申请号：US10290
申请日：1979-02-08
申请人： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura
发明人： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura
IPC分类号： C08K5/54 , C08L79/08 , H01B3/30 , H05K1/03 , C08G73/14
CPC分类号： H01B3/306 , C08K3/08 , C08K3/10 , C08K5/54 , H01B3/305 , H05K1/0346
摘要： An article for electrical use such as insulative substrates, electrical circuit borads and electrical elements, wholly or partly consisting out of an aromatic polyamide-imide having a reduced viscosity of from about 0.3 to 1.5, which polyamide-imide may contain a granular material dispersed therein, and a composition comprising 100 parts by weight of said polyamide-imide and additional about 100 to 4,000 parts by weight of a granular material and optionally about 10 to 10,000 parts by weight of a polar organic solvent.
摘要翻译：一种用于电气用途的物品，例如绝缘基材，电路桥接器和电气元件，其全部或部分由具有约0.3至1.5的比浓粘度的芳族聚酰胺 - 酰亚胺组成，该聚酰胺 - 酰亚胺可以含有分散在其中的颗粒状物质，以及包含100重量份所述聚酰胺 - 酰亚胺和另外约100至4,000重量份颗粒材料和任选地约10至10,000重量份极性有机溶剂的组合物。

4. 发明授权

US4316974A Polymers for use in heat resistant photoresist composition and process for preparing the same 失效
标题翻译：用于耐热光致抗蚀剂组合物的聚合物及其制备方法
公开(公告)号：US4316974A
公开(公告)日：1982-02-23
申请号：US104050
申请日：1979-12-17
申请人： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura
发明人： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura
IPC分类号： C08G73/14 , G03F7/037 , G03F7/038 , C08G73/10 , C08F8/00
CPC分类号： C08G73/14 , G03F7/037 , G03F7/0387
摘要： An organic polar solvent-soluble aromatic polyamide-imide having therein aromatic nuclei linked at their respective 1 - and 3 - positions and having therein amide linkages and terminal groups unsubstituted or partially substituted with acrylate or methacrylate groups is found to impart excellent heat resistance and insulating property to a photoresist composition produced therefrom.
摘要翻译：其中具有芳香族核的有机极性溶剂可溶性芳族聚酰胺 - 酰亚胺在其相应的1和3位上连接并且具有未取代或部分被丙烯酸酯或甲基丙烯酸酯基团取代的酰胺键和端基的化合物被发现赋予优异的耐热性和绝缘性性质由其制备的光致抗蚀剂组合物。

5. 发明授权

US4208477A Heat resistant photoresist composition and process for preparing the same 失效
标题翻译：耐热光致抗蚀剂组合物及其制备方法
公开(公告)号：US4208477A
公开(公告)日：1980-06-17
申请号：US961462
申请日：1978-11-16
申请人： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura
发明人： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura
IPC分类号： C08G73/14 , G03F7/037 , G03F7/038 , G03C1/72
CPC分类号： C08G73/14 , G03F7/037 , G03F7/0387
摘要： An organic polar solvent-soluble aromatic polyamide-imide having therein aromatic nuclei linked at their respective 1- and 3-positions and having therein amide linkages and terminal groups unsubstituted or partially substituted with acrylate or methacrylate groups is found to impart excellent heat resistance and insulating property to a photoresist composition produced therefrom.
摘要翻译：其中具有其各自的1-位和3-位上具有酰胺键和未被取代或部分被丙烯酸酯或甲基丙烯酸酯基团取代的端基的芳族核的有机极性溶剂可溶性芳族聚酰胺 - 酰亚胺被发现赋予优异的耐热性和绝缘性性质由其制备的光致抗蚀剂组合物。

6. 发明授权

US4227039A Thin-film microcircuit board 失效
标题翻译：薄膜微电路板
公开(公告)号：US4227039A
公开(公告)日：1980-10-07
申请号：US953497
申请日：1978-10-23
申请人： Ichiro Shibasaki , Kaoru Ohmura , Takeo Kimura , Hidehiko Kobayashi
发明人： Ichiro Shibasaki , Kaoru Ohmura , Takeo Kimura , Hidehiko Kobayashi
IPC分类号： C23C14/04 , H01L27/01 , H05K3/02
CPC分类号： C23C14/048 , H01L27/016 , H05K3/027 , H05K2201/0112 , H05K2201/0317 , H05K2201/0326 , H05K2203/056 , H05K2203/107 , Y10T428/24851
摘要： Deposited on a glass or ceramic substrate for a thin-film microcircuit board such as a hybrid IC board or a transparent electrode is a thin-film laminate, which comprises a dispersion metal thin-film dispersible and evaporable upon application of an energy above a threshold value and an electrical property-imparting film defining a conductor or a resistor. Then a high intensity of light having an energy sufficient to cause dispersion is applied selectively on the thin-film laminate, thereby removing exposed portions of the thin-film laminate as a result of dispersion and evaporation thereof. Unexposed portions of the thin-film laminate provide a desired pattern. The electrical property-imparting film is a thin-film of noble metal such as gold, silver or platinum or a thin film of transparent electrode material such as SnO.sub.2 or In.sub.2 O.sub.3, which is not easily dispersible upon application of the above energy.
摘要翻译：沉积在诸如混合IC板或透明电极之类的薄膜微电路板的玻璃或陶瓷衬底上的是薄膜层压体，其包括分散金属薄膜，其在施加高于阈值的能量时可分散和蒸发值和限定导体或电阻器的赋予电气特性的膜。然后，选择性地在薄膜层叠体上施加具有足以引起分散的能量的高强度的光，从而除去作为其分散和蒸发的结果的薄膜层叠体的暴露部分。薄膜层叠体的未曝光部分提供所需的图案。电性赋予膜是金，银，铂等贵金属的薄膜，SnO 2，In 2 O 3等透明电极材料的薄膜，在施加上述能量时不容易分散。

7. 发明授权

US4296424A Compound semiconductor device having a semiconductor-converted conductive region 失效
标题翻译：具有半导体转换导电区域的复合半导体器件
公开(公告)号：US4296424A
公开(公告)日：1981-10-20
申请号：US22916
申请日：1979-03-22
申请人： Ichiro Shibasaki , Kaoru Ohmura , Takeo Kimura
发明人： Ichiro Shibasaki , Kaoru Ohmura , Takeo Kimura
IPC分类号： H01L21/268 , H01L21/28 , H01L21/285 , H01L21/322 , H01L21/60 , H01L43/02 , H01L27/24 , H01L23/48 , H01L45/00
CPC分类号： H01L24/83 , H01L21/2686 , H01L21/28 , H01L21/28575 , H01L21/3221 , H01L24/29 , H01L43/02 , H01L2224/29101 , H01L2224/29109 , H01L2224/2919 , H01L2224/29298 , H01L2224/8319 , H01L2224/838 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01054 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/09701 , H01L2924/10329 , H01L2924/12036 , H01L2924/12042 , H01L2924/12043 , H01L2924/1579 , H01L2924/181 , H01L2924/19043
摘要： In a compound semiconductor device such as a magnetoresistance element or Hall element having a compound semiconductor portion such as of InSb and an electrode portion, a portion of the compound semiconductor portion is exposed to energy irradiation to be converted into an alloy state or amorphous state and rendered conductive to form the electrode portion. The portion rendered conductive is contiguous to and in ohmic contact with the unexposed portion of the compound semiconductor and used as a shorting bar electrode or an external lead bonding pad.
摘要翻译：在诸如InSb和电极部分的化合物半导体部分的诸如磁阻元件或霍尔元件的化合物半导体器件中，化合物半导体部分的一部分暴露于能量照射以转变为合金状态或非晶态，导电以形成电极部分。导电的部分与化合物半导体的未曝光部分邻接并与其接触，并用作短路棒电极或外部引线接合焊盘。

8. 发明授权

US4251795A Semiconductor magnetoresistive element having a differential effect 失效
标题翻译：具有差分效应的半导体磁阻元件
公开(公告)号：US4251795A
公开(公告)日：1981-02-17
申请号：US964554
申请日：1978-11-29
申请人： Ichiro Shibasaki , Kaoru Ohmura , Takeo Kimura
发明人： Ichiro Shibasaki , Kaoru Ohmura , Takeo Kimura
IPC分类号： G01R33/09 , H01L43/08
CPC分类号： H01L43/08 , G01R33/09
摘要： A semiconductor magnetoresistive element with at least one intermediate terminal comprises first and second electrodes formed at opposite ends of a magnetosensitive portion of the semiconductor magnetoresistive element, a third electrode interposed between the first and second electrodes, and a plurality of shorting bars disposed, with electrical isolation from each other, on at least one of respective sections of the magnetosensitive portion between the first and third electrodes and between the second and third electrodes, whereby the magnetic sensitivity characteristic of the magnetosensitive section between the first and third electrodes is rendered different from that of the magnetosensitive section between the second and third electrodes.
摘要翻译：具有至少一个中间端子的半导体磁阻元件包括形成在半导体磁阻元件的磁感应部分的相对端部的第一和第二电极，插在第一和第二电极之间的第三电极以及设置有电气的多个短路棒在第一和第三电极之间以及第二和第三电极之间的磁敏部分的至少一个相应部分之间以及在第二和第三电极之间彼此隔离，由此使第一和第三电极之间的磁敏部分的磁敏感特性不同于的第二和第三电极之间的磁敏部分。

9. 发明申请

US20090001351A1 Insb Thin Film Magnetic Sensor and Fabrication Method Thereof 有权
标题翻译： Insb薄膜磁传感器及其制作方法
公开(公告)号：US20090001351A1
公开(公告)日：2009-01-01
申请号：US12087149
申请日：2006-12-27
申请人： Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
发明人： Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
IPC分类号： H01L27/22 , H01L21/20
CPC分类号： G01R33/06 , H01L43/065 , H01L43/08 , H01L43/12 , H01L43/14
摘要： The present invention relates to a thin film lamination to be used in a micro InSb thin film magnetic sensor which can directly detect a magnetic flux density with high sensitivity and has small power consumption and consumption current, and the InSb thin film magnetic sensor. The InSb thin film magnetic sensor uses an InSb thin film as a magnetic sensor section or a magnetic detecting section. The sensor includes an InSb layer that is an InSb thin film formed on a substrate, and an AlxGayIn1-x-ySb mixed crystal layer (0≦x, y≦1) which shows resistance higher than the InSb layer or insulation, or p-type conduction, and has a band gap larger than that of InSb. The mixed crystal layer is provided between the substrate and the InSb layer, and has a content of Al and Ga atoms (x+y) in the range of 5.0 to 17%.
摘要翻译：本发明涉及一种用于微型InSb薄膜磁传感器中的薄膜层压体，其可以高灵敏度地直接检测磁通密度并且具有小的功耗和消耗电流，以及InSb薄膜磁传感器。 InSb薄膜磁传感器使用InSb薄膜作为磁传感器部分或磁检测部分。传感器包括作为形成在基板上的InSb薄膜的InSb层和表现出高于InSb层或绝缘体的电阻的Al x Ga y In 1-x-y Sb混合晶体层（0 <= x，y <= 1），或 p型导电，并且具有比InSb大的带隙。混合晶体层设置在基板和InSb层之间，Al和Ga原子的含量（x + y）在5.0〜17％的范围内。

10. 发明授权

US5453727A Semiconductor sensors and method for fabricating the same 失效
标题翻译：半导体传感器及其制造方法
公开(公告)号：US5453727A
公开(公告)日：1995-09-26
申请号：US988928
申请日：1993-03-15
申请人： Ichiro Shibasaki , Naohiro Kuze , Tatsuro Iwabuchi , Kazuhiro Nagase
发明人： Ichiro Shibasaki , Naohiro Kuze , Tatsuro Iwabuchi , Kazuhiro Nagase
IPC分类号： H01L31/0304 , H01L43/06 , H01L43/00
CPC分类号： H01L31/03046 , H01L43/065 , Y02E10/544
摘要： The present invention is a method of fabrication of a thin film of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0
摘要翻译： PCT No.PCT / JP92 / 00908 Sec。 371日期1993年3月15日 102（e）1993年3月15日PCT提交1992年7月16日PCT公布。出版物WO93 / 02479 日期：1993年2月4日。本发明是制造不具有晶格紊乱的In x Ga 1-x As y Sb 1-y（0

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