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1. 发明专利

JP2014175495A Light source for semiconductor lithography 审中-公开
标题翻译：用于半导体光刻的光源
公开(公告)号：JP2014175495A
公开(公告)日：2014-09-22
申请号：JP2013047227
申请日：2013-03-08
申请人： Kansai Univ , 学校法人関西大学
发明人： ONISHI MASAMI , WAHEED HUGHGLASS
IPC分类号： H01L21/027 , H05G2/00 , H05H1/08
摘要： PROBLEM TO BE SOLVED: To provide a light source for lithography which allows for generation of high temperature, high density plasma, while recovering debris occurring with development of plasma effectively.SOLUTION: A light source for semiconductor lithography generating light of short wavelength for patterning a circuit on a semiconductor wafer includes a light source body having an outer peripheral wall defining an internal space filled with stannane gas under a state of negative pressure, reverse magnetic field configuration generation means for generating a reverse magnetic field configuration in the internal space, in order to generate plasma via stannane gas in the internal space of the light source body, and debris recovery means for recovering debris occurring by generation of plasma in the internal space of the light source body.
摘要翻译：要解决的问题：提供一种用于光刻的光源，其允许产生高温，高密度等离子体，同时有效地回收随着等离子体的发展而发生的碎片。解决方案：用于半导体光刻的光源，其产生短波长的光，用于图案化半导体晶片上的电路包括在负压状态下具有限定填充有锡烷气体的内部空间的外周壁的光源体，按顺序在内部空间中产生反向磁场结构的反向磁场结构生成装置以通过光源体的内部空间中的锡烷气体产生等离子体，以及碎片回收装置，用于回收通过在光源体的内部空间中产生等离子体而产生的碎片。

2. 发明专利

JP2012079857A Light source device for semiconductor lithography 有权
标题翻译：用于半导体光刻的光源器件
公开(公告)号：JP2012079857A
公开(公告)日：2012-04-19
申请号：JP2010222493
申请日：2010-09-30
申请人： Kansai Univ , 学校法人関西大学
发明人： ONISHI MASAMI , WAHEED HUGHGLASS
IPC分类号： H01L21/027 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide a light source device for semiconductor lithography capable of generating short-wavelength light optimum for forming a highly integrated circuit on a semiconductor wafer, without generating debris that inhibits the transfer of circuit patterns onto the semiconductor wafer.SOLUTION: A light source device for semiconductor lithography comprises: a cavity resonator provided with an internal space; a hollow body which is made of a non-magnetic material having an electric insulation property, and which is filled with noble gas or mixed gas containing the noble gas; and electromagnetic wave supply means for supplying electromagnetic waves to the internal space of the cavity resonator. The hollow body is configured such that a short-wavelength light component or light containing the light component can be emitted from at least part of it. Further, the hollow body is positioned in such a manner that at least part of it is located in the internal space of the cavity resonator. The cavity resonator is provided with a light emission part which is capable of emitting the short-wavelength light component or the light containing the light component emitted from the hollow body to the outside.
摘要翻译：要解决的问题：提供一种用于半导体光刻的光源装置，其能够产生最佳的短波长光，以在半导体晶片上形成高度集成的电路，而不产生抑制电路图案转移到半导体晶片上的碎片。解决方案：一种用于半导体光刻的光源装置，包括：具有内部空间的空腔谐振器; 由具有电绝缘性的非磁性材料制成的中空体，填充有惰性气体或含有该惰性气体的混合气体; 以及用于向空腔谐振器的内部空间提供电磁波的电磁波提供装置。中空体构成为能够从其至少一部分发射短波长的光分量或含有光分量的光。此外，中空体的定位方式使得其至少一部分位于空腔谐振器的内部空间中。空腔谐振器设置有能够将短波长光分量或包含从中空体发射的光分量的光发射到外部的发光部。版权所有（C）2012，JPO＆INPIT

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