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1. 发明授权

US08005346B2 Recording medium having data structure for managing reproduction of data recorded thereon and recording and reproducing methods and apparatuses 有权
标题翻译：具有用于管理记录在其上的数据的再现的数据结构的记录介质以及记录和再现方法和装置
公开(公告)号：US08005346B2
公开(公告)日：2011-08-23
申请号：US10716629
申请日：2003-11-20
申请人： Kang Soo Seo , Chang Bum Kim , Tae Ho Kim , Byung Jin Kim , Soung Hyun Um
发明人： Kang Soo Seo , Chang Bum Kim , Tae Ho Kim , Byung Jin Kim , Soung Hyun Um
IPC分类号： H04N5/84 , H04N5/89 , H04N5/92 , H04N5/80
CPC分类号： H04N9/8205 , G11B27/034 , G11B27/10 , G11B27/105 , G11B27/329 , G11B2020/1288 , G11B2220/20 , G11B2220/213 , G11B2220/216 , G11B2220/2541 , H04N5/85 , H04N9/8042 , H04N9/8047
摘要： The recording medium includes a data structure having at least first and second clip stream files and a playlist. The first clip stream file includes video data representing at least one still image, and the second clip stream file includes at least audio data. The playlist includes at least one playitem and at least one sub-playitem. The playitem indicates at least a portion of the first clip stream file to reproduce, and the sub-playitem indicates at least a portion of the second clip stream file to reproduce.
摘要翻译：记录介质包括具有至少第一和第二剪辑流文件和播放列表的数据结构。第一剪辑流文件包括表示至少一个静止图像的视频数据，并且第二剪辑流文件至少包括音频数据。播放列表包括至少一个播放项目和至少一个子播放项目。播放项指示要再现的第一剪辑流文件的至少一部分，并且子播放项指示要再现的第二剪辑流文件的至少一部分。

2. 发明授权

US07639921B2 Recording medium having data structure for managing reproduction of still images recorded thereon and recording and reproducing methods and apparatuses 有权
标题翻译：具有用于管理记录在其上的静止图像的再现的数据结构的记录介质以及记录和再现方法和装置
公开(公告)号：US07639921B2
公开(公告)日：2009-12-29
申请号：US10716611
申请日：2003-11-20
申请人： Kang Soo Seo , Chang Bum Kim , Tae Ho Kim , Byung Jin Kim , Soung Hyun Um
发明人： Kang Soo Seo , Chang Bum Kim , Tae Ho Kim , Byung Jin Kim , Soung Hyun Um
IPC分类号： G11B27/00
CPC分类号： H04N9/8205 , G11B27/034 , G11B27/10 , G11B27/105 , G11B27/329 , G11B2020/1288 , G11B2220/20 , G11B2220/213 , G11B2220/216 , G11B2220/2541 , H04N5/85 , H04N9/8042 , H04N9/8047
摘要： The recording medium includes a data structure having a clip stream file and a clip information file associated with the clip stream file. The clip stream file includes at least video data for a still image, and the clip information file including at least an entry point map. The entry point map includes an entry point, and the entry point provides at least an address of the still image.
摘要翻译：记录介质包括具有剪辑流文件和与剪辑流文件相关联的剪辑信息文件的数据结构。剪辑流文件至少包括用于静止图像的视频数据，并且剪辑信息文件至少包括入口点映射。入口点图包括入口点，入口点至少提供静止图像的地址。

3. 发明授权

US08831406B2 Recording medium having data structure for managing reproduction of at least video data recorded thereon and recording and reproducing methods and apparatuses 有权
标题翻译：至少具有记录在其上的视频数据的再现的数据结构的记录介质以及记录和再现方法和装置
公开(公告)号：US08831406B2
公开(公告)日：2014-09-09
申请号：US10715511
申请日：2003-11-19
申请人： Kang Soo Seo , Eun Sil Hyun , Jea Yong Yoo , Sung Wan Park , Byung Jin Kim , Soung Hyun Um , Chang Bum Kim
发明人： Kang Soo Seo , Eun Sil Hyun , Jea Yong Yoo , Sung Wan Park , Byung Jin Kim , Soung Hyun Um , Chang Bum Kim
IPC分类号： H04N9/80 , H04N5/84 , H04N5/89 , G11B27/30 , G11B27/34 , H04N9/804 , H04N21/432 , G11B27/10 , G11B27/32 , H04N21/482 , G11B27/034 , H04N5/85 , H04N9/82 , H04N9/806
CPC分类号： H04N21/4325 , G11B27/034 , G11B27/105 , G11B27/3027 , G11B27/329 , G11B27/34 , G11B2220/20 , G11B2220/213 , G11B2220/216 , G11B2220/2541 , G11B2220/2562 , H04N5/85 , H04N9/8042 , H04N9/8063 , H04N9/8205 , H04N9/8227 , H04N21/4825
摘要： The recording medium has a data structure for managing reproduction of data recorded on the recording medium. A navigation area stores at least one navigation file, and the navigation file includes at least one navigation command group. At least one navigation command group includes at least one navigation command for managing reproduction of at least video data recorded on the recording medium.
摘要翻译：记录介质具有用于管理记录在记录介质上的数据的再现的数据结构。导航区存储至少一个导航文件，导航文件包括至少一个导航指令组。至少一个导航指令组包括至少一个用于管理至少记录在记录介质上的视频数据的再现的导航命令。

4. 发明授权

US07609943B2 Method and apparatus of recording graphic data on a recording medium 失效
标题翻译：在记录介质上记录图形数据的方法和装置
公开(公告)号：US07609943B2
公开(公告)日：2009-10-27
申请号：US10759269
申请日：2004-01-20
申请人： Kang Soo Seo , Byung Jin Kim , Chang Bum Kim
发明人： Kang Soo Seo , Byung Jin Kim , Chang Bum Kim
IPC分类号： H04N5/91
CPC分类号： H04N9/8042 , G11B27/034 , G11B27/105 , G11B27/329 , G11B2020/1288 , G11B2220/20 , G11B2220/2541 , H04N5/85 , H04N9/8205 , H04N9/8227
摘要： The present invention relates to method and apparatus of recording graphic data constituting sub-pictures in a main video on a high-density recording medium such as a Blu-ray Disk ROM (BD-ROM) disk. In the present invention, when a plurality of graphic objects, namely, images are received, the plurality of graphic objects and their color control information are organized into a PES (Packetized Elementary Stream) packet and then recorded on a recording medium, wherein the color control information is used in common for screen display by the plurality of graphic objects.
摘要翻译：本发明涉及在诸如蓝光盘ROM（BD-ROM）盘等高密度记录媒体的主视频中记录构成子画面的图形数据的方法和装置。在本发明中，当接收多个图形对象即图像时，将多个图形对象及其颜色控制信息组织成PES（分组化基本流）分组，然后记录在记录介质上，其中颜色控制信息被共同地用于多个图形对象的画面显示。

5. 发明授权

US07217320B2 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults 有权
标题翻译：具有基本上不含氧化诱导的堆垛层错的空位主导的核的低缺陷密度的硅
公开(公告)号：US07217320B2
公开(公告)日：2007-05-15
申请号：US11005987
申请日：2004-12-07
申请人： Chang Bum Kim , Steven L. Kimbel , Jeffrey L. Libbert , Mohsen Banan
发明人： Chang Bum Kim , Steven L. Kimbel , Jeffrey L. Libbert , Mohsen Banan
IPC分类号： C03B15/20
CPC分类号： C30B15/203 , C30B15/20 , C30B15/206 , C30B29/06 , Y10T428/21
摘要： The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, and (iii) a cooling rate of the crystal from solidification to about 750° C., in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterized in that v, G0 and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.
摘要翻译：本发明涉及一种制备单晶硅锭的方法，以及由此产生的锭或晶片。该方法包括控制（i）生长速度v，（ii）平均轴向温度梯度G 0 O 3，和（iii）晶体从凝固到约750℃的冷却速率。，以便形成具有第一轴向对称区域的区段，该第一轴向对称区域从该晶锭的侧表面径向向内延伸，其中硅自间隙是主要的固有点缺陷，以及第二轴向对称区域，其从第一并朝向锭的中心轴线。该方法的特征在于控制v，G 0和冷却速率以防止在第一区域中形成凝聚的固有点缺陷，同时进一步控制冷却速率以限制氧化物的形成在对晶片进行氧化处理（其他适用于形成这样的故障的氧化处理）之后，在来自该段的晶片中引起堆垛层错。

6. 发明授权

US08736169B2 Electron beam generating apparatus 有权
标题翻译：电子束发生装置
公开(公告)号：US08736169B2
公开(公告)日：2014-05-27
申请号：US13122109
申请日：2010-08-10
申请人： Yong Woon Park , Sung Ju Park , In Soo Ko , Chang Bum Kim , Ju Ho Hong , Sung Ik Moon
发明人： Yong Woon Park , Sung Ju Park , In Soo Ko , Chang Bum Kim , Ju Ho Hong , Sung Ik Moon
IPC分类号： H01J29/80
CPC分类号： H01J3/02
摘要： An apparatus for generating an electron beam is disclosed to reduce emittance of an electron beam. The apparatus includes: a housing including a rear portion where an electron beam is generated, a front portion having an electron beam discharge hole for discharging the electron beam to the exterior, and a side portion connecting the rear portion and the front portion, the side portion having a first hole and an opposite side portion, facing the first hole, having a second hole in order to reduce asymmetry of an electric field caused by the first hole; and a waveguide installed on the side portion to supply an electromagnetic wave to the interior of the housing through the first hole, wherein the electron beam is generated by laser incident to the interior of the housing and accelerated by the electromagnetic wave supplied to the interior of the housing.
摘要翻译：公开了一种用于产生电子束的装置，以减少电子束的发射。该装置包括：壳体，其包括产生电子束的后部，具有用于将电子束排出到外部的电子束排出孔的前部和连接后部和前部的侧部，具有第一孔和与第一孔相对的相对侧部的部分具有第二孔，以减少由第一孔引起的电场的不对称性; 以及安装在所述侧部上的波导，以通过所述第一孔向所述壳体的内部提供电磁波，其中所述电子束通过入射到所述壳体的内部的激光产生并且被提供给所述壳体内部的电磁波加速住房。

7. 发明授权

US06846539B2 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults 有权
标题翻译：具有基本上不含氧化诱导的堆垛层错的空位主导的核的低缺陷密度的硅
公开(公告)号：US06846539B2
公开(公告)日：2005-01-25
申请号：US10054629
申请日：2002-01-22
申请人： Chang Bum Kim , Steven L. Kimbel , Jeffrey L. Libbert , Mohsen Banan
发明人： Chang Bum Kim , Steven L. Kimbel , Jeffrey L. Libbert , Mohsen Banan
IPC分类号： C30B29/06 , C30B15/00 , C30B15/20 , C30B33/02 , H01L29/06
CPC分类号： C30B15/203 , C30B15/20 , C30B15/206 , C30B29/06 , Y10T428/21
摘要： The present invention relates to a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom. The process comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, and (iii) a cooling rate of the crystal from solidification to about 750° C., in order to cause the formation of a segment having a first axially symmetric region extending radially inward from the lateral surface of the ingot wherein silicon self-interstitials are the predominant intrinsic point defect, and a second axially symmetric region extending radially inward from the first and toward the central axis of the ingot. The process is characterized in that v, G0 and the cooling rate are controlled to prevent the formation of agglomerated intrinsic point defects in the first region, while the cooling rate is further controlled to limit the formation of oxidation induced stacking faults in a wafer derived from this segment, upon subjecting the wafer to an oxidation treatment otherwise suitable for the formation of such faults.
摘要翻译：本发明涉及一种制备单晶硅锭的方法，以及由此产生的锭或晶片。该方法包括控制（i）生长速度v，（ii）平均轴向温度梯度G0和（iii）晶体从凝固到约750℃的冷却速率，以便形成具有从铸锭的侧表面径向向内延伸的第一轴向对称区域的区段，其中硅自填隙是主要的固有点缺陷，以及从铸锭的第一和朝向中心轴线径向向内延伸的第二轴向对称区域。该方法的特征在于，控制v，G0和冷却速率以防止在第一区域中形成凝聚的本征点缺陷，同时进一步控制冷却速率以限制衍生自晶片的晶片中氧化诱导的堆垛层错的形成该片段在使晶片进行其他适于形成这种故障的氧化处理时。

8. 发明授权

US08278813B2 Apparatus and method for generating femtosecond electron beam 有权
标题翻译：用于产生飞秒电子束的装置和方法
公开(公告)号：US08278813B2
公开(公告)日：2012-10-02
申请号：US12481995
申请日：2009-06-10
申请人： Yong Woon Park , Hyotcherl Ihee , Chang Bum Kim , In Soo Ko
发明人： Yong Woon Park , Hyotcherl Ihee , Chang Bum Kim , In Soo Ko
IPC分类号： H01J29/46
CPC分类号： H01J37/045 , H01J3/18 , H01J37/063 , H01J37/073 , H01J37/295 , H01J2237/0432 , H01J2237/06333
摘要： An apparatus and method for generating femtosecond electron beam are disclosed. The apparatus for generating electron beam by discharging an electron generated via a cathode to an anode includes a transmission window provided at one side of the cathode to allow incident laser to pass therethrough, a pinhole formed on the anode such that the pinhole corresponds to the position of the electron generated from the transmission window, and a focusing unit provided at one side of the cathode and generating an electric field to accelerate and at the same time concentrate the electron to the pinhole. Electrons are simultaneously concentrated and accelerated to the pinhole by an electric field generated by the focusing unit positioned at the cathode to generate femtosecond electron beam.
摘要翻译：公开了一种用于产生飞秒电子束的装置和方法。通过将通过阴极发射的电子放电到阳极来产生电子束的装置包括设置在阴极的一侧以允许入射激光通过的透射窗口，形成在阳极上的针孔，使得针孔对应于位置的发射窗产生的电子，以及设置在阴极一侧的聚焦单元，产生电场以加速并同时将电子集中到针孔。通过由位于阴极处的聚焦单元产生的电场，电子同时集中并加速到针孔，以产生飞秒电子束。

9. 发明申请

US20120133281A1 ELECTRON BEAM GENERATING APPARATUS 有权
标题翻译：电子束发生装置
公开(公告)号：US20120133281A1
公开(公告)日：2012-05-31
申请号：US13122109
申请日：2010-08-10
申请人： Yong Woon Park , Sung Ju Park , In Soo Ko , Chang Bum Kim , Ju Ho Hong , Sung Ik Moon
发明人： Yong Woon Park , Sung Ju Park , In Soo Ko , Chang Bum Kim , Ju Ho Hong , Sung Ik Moon
IPC分类号： H01J29/80
CPC分类号： H01J3/02
摘要： An apparatus for generating an electron beam is disclosed to reduce emittance of an electron beam. The apparatus includes: a housing including a rear portion where an electron beam is generated, a front portion having an electron beam discharge hole for discharging the electron beam to the exterior, and a side portion connecting the rear portion and the front portion, the side portion having a first hole and an opposite side portion, facing the first hole, having a second hole in order to reduce asymmetry of an electric field caused by the first hole; and a waveguide installed on the side portion to supply an electromagnetic wave to the interior of the housing through the first hole, wherein the electron beam is generated by laser incident to the interior of the housing and accelerated by the electromagnetic wave supplied to the interior of the housing.
摘要翻译：公开了一种用于产生电子束的装置，以减少电子束的发射。该装置包括：壳体，其包括产生电子束的后部，具有用于将电子束排出到外部的电子束排出孔的前部和连接后部和前部的侧部，具有第一孔和与第一孔相对的相对侧部的部分具有第二孔，以减少由第一孔引起的电场的不对称性; 以及安装在所述侧部上的波导，以通过所述第一孔向所述壳体的内部提供电磁波，其中所述电子束通过入射到所述壳体的内部的激光产生并且被提供给所述壳体内部的电磁波加速住房。

10. 发明申请

US20100117510A1 APPARATUS AND METHOD FOR GENERATING FEMTOSECOND ELECTRON BEAM 有权
标题翻译：用于生成FEMTOSECOND电子束的装置和方法
公开(公告)号：US20100117510A1
公开(公告)日：2010-05-13
申请号：US12481995
申请日：2009-06-10
申请人： Yong Woon PARK , Hyotcherl Ihee , Chang Bum Kim , In Soo Ko
发明人： Yong Woon PARK , Hyotcherl Ihee , Chang Bum Kim , In Soo Ko
IPC分类号： H01J29/46
CPC分类号： H01J37/045 , H01J3/18 , H01J37/063 , H01J37/073 , H01J37/295 , H01J2237/0432 , H01J2237/06333
摘要： An apparatus and method for generating femtosecond electron beam are disclosed. The apparatus for generating electron beam by discharging an electron generated via a cathode to an anode includes a transmission window provided at one side of the cathode to allow incident laser to pass therethrough, a pinhole formed on the anode such that the pinhole corresponds to the position of the electron generated from the transmission window, and a focusing unit provided at one side of the cathode and generating an electric field to accelerate and at the same time concentrate the electron to the pinhole. Electrons are simultaneously concentrated and accelerated to the pinhole by an electric field generated by the focusing unit positioned at the cathode to generate femtosecond electron beam.
摘要翻译：公开了一种用于产生飞秒电子束的装置和方法。通过将通过阴极发射的电子放电到阳极来产生电子束的装置包括设置在阴极的一侧以允许入射激光通过的透射窗口，形成在阳极上的针孔，使得针孔对应于位置的发射窗产生的电子，以及设置在阴极一侧的聚焦单元，产生电场以加速并同时将电子集中到针孔。通过由位于阴极处的聚焦单元产生的电场，电子同时集中并加速到针孔，以产生飞秒电子束。

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