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    • 1. 发明申请
    • MASK ASSIGNMENT FOR MULTIPLE PATTERNING LITHOGRAPHY
    • 多功能拼图的掩蔽分配
    • US20130061185A1
    • 2013-03-07
    • US13223706
    • 2011-09-01
    • Rani S. Abou GhaidaKanak B. AgarwalLars W. LiebmannSani R. Nassif
    • Rani S. Abou GhaidaKanak B. AgarwalLars W. LiebmannSani R. Nassif
    • G06F17/50
    • G03F1/70G03F7/70466G03F7/70475
    • A mechanism is provided for mask assignment for triple patterning lithography. The mechanism identifies tip-to-tip (TT), tip-to-side (TS), and side-to-side (SS) conflicting parts by design rule dependent projection. The mechanism finds stitch location for TT, TS, and SS conflicts separately. The mechanism colors TT, TS, and SS conflicting parts with mask0/mask1, mask0/mask2, mask1/mask2 coloring cycle with each type colored separately. The mechanism uses existing infrastructure of two-way coloring. As a first objective, the mechanism attempts to minimize conflicts. As a second objective, the mechanism attempts to minimize the number of stitches by assigning the two sides of stitches to the same mask. Once coloring of all conflicting parts is done, the mechanism colors non-conflicting parts to maximize minimum overlap of exposures and to use both colors if two sides are different colors and one color if both sides are the same color.
    • 提供了用于三重图案化光刻的掩模分配的机构。 该机制通过设计规则相关的投影来识别尖端到尖端(TT),尖端到侧面(TS)以及侧向(SS)冲突部分。 该机制分别查找TT,TS和SS冲突的针脚位置。 机制颜色TT,TS和SS冲突部分与mask0 / mask1,mask0 / mask2,mask1 / mask2着色循环,每种类型分别着色。 该机制使用现有的双向着色基础设施。 作为第一个目标,该机制试图尽量减少冲突。 作为第二个目的,该机构通过将针脚的两侧分配到相同的面罩来尝试最小化线迹数。 一旦完成所有冲突部分的着色,该机制将颜色非冲突部分,以最大化曝光的最小重叠,并且如果双面是不同的颜色,则使用两种颜色,如果两面是相同颜色,则使用一种颜色。
    • 2. 发明授权
    • Split-layer design for double patterning lithography
    • 双层图案平版印刷的分层设计
    • US08347240B2
    • 2013-01-01
    • US12915923
    • 2010-10-29
    • Kanak B. AgarwalLars W. LiebmannSani R. Nassif
    • Kanak B. AgarwalLars W. LiebmannSani R. Nassif
    • G06F17/50G06F19/00G03F1/00G21K5/00
    • G03F1/70H01L27/0207
    • A mechanism is provided for converting a set of single-layer design rules into a set of split-layer design rules for double patterning lithography (DPL). The set of single-layer design rules and minimum lithographic resolution pitch constraints for single exposure are identified. The set of single-layer design rules comprise a first plurality of minimum distances that are required by a set of first shapes in a single-layer design. Each of the first plurality of minimum distances in the set of single-layer design rules are modified with regard to the minimum lithographic resolution pitch constraints for single exposure, thereby forming the set of split-layer design rules. The set of split-layer design rules comprise a second plurality of minimum distances that are required by a set of second shapes and a set of third shapes in a split-layer design. The set of split-layer design rules are then coded into a design rule checker.
    • 提供了一种用于将一组单层设计规则转换为用于双重图案化光刻(DPL)的一组分裂层设计规则的机制。 确定了一套单层设计规则和单次曝光的最小光刻分辨率间距约束。 单层设计规则的集合包括单层设计中的一组第一形状所需的第一多个最小距离。 关于单次曝光的最小光刻分辨率间距约束修改单层设计规则集合中的第一多个最小距离中的每一个,从而形成分裂层设计规则集合。 分裂层设计规则的集合包括一组第二形状所需的第二多个最小距离和分裂层设计中的一组第三形状。 然后将该组分裂设计规则编码为设计规则检查器。
    • 3. 发明授权
    • Mask assignment for multiple patterning lithography
    • 多重图案平版印刷的掩模分配
    • US08434033B2
    • 2013-04-30
    • US13223706
    • 2011-09-01
    • Rani S. Abou GhaidaKanak B. AgarwalLars W. LiebmannSani R. Nassif
    • Rani S. Abou GhaidaKanak B. AgarwalLars W. LiebmannSani R. Nassif
    • G06F17/50
    • G03F1/70G03F7/70466G03F7/70475
    • A mechanism is provided for mask assignment for triple patterning lithography. The mechanism identifies tip-to-tip (TT), tip-to-side (TS), and side-to-side (SS) conflicting parts by design rule dependent projection. The mechanism finds stitch location for TT, TS, and SS conflicts separately. The mechanism colors TT, TS, and SS conflicting parts with mask0/mask1, mask0/mask2, mask1/mask2 coloring cycle with each type colored separately. The mechanism uses existing infrastructure of two-way coloring. As a first objective, the mechanism attempts to minimize conflicts. As a second objective, the mechanism attempts to minimize the number of stitches by assigning the two sides of stitches to the same mask. Once coloring of all conflicting parts is done, the mechanism colors non-conflicting parts to maximize minimum overlap of exposures and to use both colors if two sides are different colors and one color if both sides are the same color.
    • 提供了用于三重图案化光刻的掩模分配的机构。 该机制通过设计规则相关的投影来识别尖端到尖端(TT),尖端到侧面(TS)以及侧向(SS)冲突部分。 该机制分别查找TT,TS和SS冲突的针脚位置。 机制颜色TT,TS和SS冲突部分与mask0 / mask1,mask0 / mask2,mask1 / mask2着色循环,每种类型分别着色。 该机制使用现有的双向着色基础设施。 作为第一个目标,该机制试图尽量减少冲突。 作为第二个目的,该机构通过将针脚的两侧分配到相同的面罩来尝试最小化线迹数。 一旦完成所有冲突部分的着色,该机制将颜色非冲突部分,以最大化曝光的最小重叠,并且如果双面是不同的颜色,则使用两种颜色,如果两面是相同颜色,则使用一种颜色。
    • 5. 发明申请
    • Split-Layer Design for Double Patterning Lithography
    • 双图案平版印刷的分层设计
    • US20120110521A1
    • 2012-05-03
    • US12915923
    • 2010-10-29
    • Kanak B. AgarwalLars W. LiebmannSani R. Nassif
    • Kanak B. AgarwalLars W. LiebmannSani R. Nassif
    • G06F17/50
    • G03F1/70H01L27/0207
    • A mechanism is provided for converting a set of single-layer design rules into a set of split-layer design rules for double patterning lithography (DPL). The set of single-layer design rules and minimum lithographic resolution pitch constraints for single exposure are identified. The set of single-layer design rules comprise a first plurality of minimum distances that are required by a set of first shapes in a single-layer design. Each of the first plurality of minimum distances in the set of single-layer design rules are modified with regard to the minimum lithographic resolution pitch constraints for single exposure, thereby forming the set of split-layer design rules. The set of split-layer design rules comprise a second plurality of minimum distances that are required by a set of second shapes and a set of third shapes in a split-layer design. The set of split-layer design rules are then coded into a design rule checker.
    • 提供了一种用于将一组单层设计规则转换为用于双重图案化光刻(DPL)的一组分裂层设计规则的机制。 确定了一套单层设计规则和单次曝光的最小光刻分辨率间距约束。 单层设计规则的集合包括单层设计中的一组第一形状所需的第一多个最小距离。 关于单次曝光的最小光刻分辨率间距约束修改单层设计规则集合中的第一多个最小距离中的每一个,从而形成分裂层设计规则集合。 分裂层设计规则的集合包括一组第二形状所需的第二多个最小距离和分裂层设计中的一组第三形状。 然后将该组分裂设计规则编码为设计规则检查器。
    • 6. 发明授权
    • Multiple patterning layout decomposition for ease of conflict removal
    • 多重图案化布局分解,便于冲突删除
    • US08516403B2
    • 2013-08-20
    • US13223844
    • 2011-09-01
    • Rani S. Abou GhaidaKanak B. AgarwalLars W. LiebmannSani R. Nassif
    • Rani S. Abou GhaidaKanak B. AgarwalLars W. LiebmannSani R. Nassif
    • G06F17/50
    • G06F17/5068
    • A mechanism is provided for multiple patterning lithography with conflict removal aware coloring. The mechanism makes multiple patterning coloring aware of the conflict removal overhead. The coloring solution explicitly considers ease of conflict removal as one of the coloring objectives. The mechanism pre-computes how much shapes can move in each direction. The mechanism generates a conflict graph where nodes represent shapes in the layout and edges represent conflicts between shapes. The mechanism assigns weights to edges based on available spatial slack between conflicting features. The mechanism then uses the weights to guide multiple patterning coloring. The mechanism prioritizes conflicting features with higher weights to be assigned different colors.
    • 提供了一种用于具有冲突消除意识着色的多重图案化光刻的机构。 该机制使得多个图案化着色意识到冲突移除开销。 着色解决方案明确地将冲突移除的容易性作为着色目标之一。 该机制预先计算出每个方向上可以移动多少形状。 该机制生成一个冲突图,其中节点表示布局中的形状,边缘表示形状之间的冲突。 该机制基于冲突特征之间的可用空间松弛来为边缘分配权重。 该机构然后使用重量来引导多个图案化着色。 该机制优先处理具有较高权重的冲突特征,以分配不同的颜色。
    • 8. 发明申请
    • SCANNABLE VIRTUAL RAIL RING OSCILLATOR CIRCUIT AND SYSTEM FOR MEASURING VARIATIONS IN DEVICE CHARACTERISTICS
    • 扫描虚拟铁轨振荡器电路和用于测量设备特性变化的系统
    • US20090125258A1
    • 2009-05-14
    • US12356145
    • 2009-01-20
    • Kanak B. AgarwalSani R. Nassif
    • Kanak B. AgarwalSani R. Nassif
    • G01R31/28G01R23/02
    • G01R31/2884G01R31/318577H03K3/0315H03K2005/00058H03K2005/00234
    • A scannable virtual rail ring oscillator circuit and system for measuring variations in device characteristics provides the ability to study random device characteristic variation as well as systematic differences between N-channel and P-channel devices using a ring oscillator frequency measurement. The ring oscillator is operated from at least one virtual power supply rail that is connected to the actual power supply rail by a plurality of transistors controlled by a programmable source. The transistors are physically distributed along the physical distribution of the ring oscillator elements and each can be enabled in turn and the variation in ring oscillator frequency measured. The ring oscillator frequency measurements yield information about the variation between the transistors and N-channel vs. P-channel variation can be studied by employing positive and negative virtual power supply rails with corresponding P-channel and N-channel control transistors.
    • 用于测量器件特性变化的可扫描虚拟轨道环形振荡器电路和系统提供了使用环形振荡器频率测量来研究随机器件特性变化以及N沟道和P沟道器件之间的系统差异的能力。 环形振荡器通过由可编程源控制的多个晶体管连接到实际电源轨的至少一个虚拟电源轨来操作。 晶体管沿着环形振荡器元件的物理分布物理分布,并且可以依次启用晶体管,并测量环形振荡器频率的变化。 可以通过使用具有相应P沟道和N沟道控制晶体管的正和负虚拟电源轨来研究环形振荡器频率测量产生关于晶体管与N沟道与P沟道变化之间变化的信息。
    • 9. 发明申请
    • Method of separating the process variation in threshold voltage and effective channel length by electrical measurements
    • 通过电气测量分离阈值电压和有效通道长度的工艺变化的方法
    • US20080097715A1
    • 2008-04-24
    • US11551814
    • 2006-10-23
    • Kanak B. AgarwalSani R. Nassif
    • Kanak B. AgarwalSani R. Nassif
    • G06F19/00G06F17/18
    • H01L22/14H01L29/78
    • A IC wafer is fabricated using a process of interest to have a plurality of FET devices with different channel lengths (Leff) form a plurality of channel length groups. The threshold voltage (VT) is measured of a statistical sample of the FET devices in each channel length group at two different drain-to-source voltage (VDS). The mean of VT is calculated for each channel length and each VDS. A slope coefficient λ relating VT to Leff is calculated at each VDS. The total variance of VT is calculated at each VDS. Two equations at each VDS, each relating the total variance of VT to the variance of VT with respect to dopant levels and the square of the slope coefficient λ times the variance of Leff, are solved simultaneously to obtain the variance of VT with respect to dopant levels and the variance of Leff.
    • 使用感兴趣的工艺制造IC晶片,以具有形成多个沟道长度组的具有不同沟道长度(Leff)的多个FET器件。 在两个不同的漏极 - 源极电压(VDS)下,测量每个沟道长度组中的FET器件的统计采样的阈值电压(VT)。 对每个通道长度和每个VDS计算VT的平均值。 在每个VDS处计算出与Leff相关的VT的斜率系数λ。 在每个VDS处计算VT的总方差。 每个VDS上的两个方程,每个VDS相关于VT的总方差相对于掺杂剂水平的方差和斜率系数λ乘以Leff方差的平方式被同时求解以获得相对于掺杂剂的VT的方差 水平和Leff的差异。
    • 10. 发明申请
    • Characterization Array and Method for Determining Threshold Voltage Variation
    • 用于确定阈值电压变化的表征阵列和方法
    • US20080030220A1
    • 2008-02-07
    • US11462186
    • 2006-08-03
    • Kanak B. AgarwalSani R. Nassif
    • Kanak B. AgarwalSani R. Nassif
    • G01R31/36
    • G01R31/2884G01R31/2621G01R31/275
    • A characterization array and method for determining threshold voltage variation rapidly provides accurate threshold voltage distribution values for process verification and improvement. The characterization array includes a circuit for imposing a fixed drain-source voltage and a constant channel current at individual devices within the array. A circuit for sensing the source voltage of the individual device is also included within the array. The statistical distribution of the threshold voltage is determined directly from the source voltage distribution by offsetting each source voltage by a value determined by completely characterizing one or more devices within the array. The resulting methodology avoids the necessity of otherwise characterizing each device within the array, thus reducing measurement time dramatically.
    • 用于确定阈值电压变化的表征阵列和方法快速提供准确的阈值电压分布值用于过程验证和改进。 表征阵列包括用于在阵列内的各个器件处施加固定的漏源电压和恒定沟道电流的电路。 用于感测单个器件的源极电压的电路也包括在阵列内。 阈值电压的统计分布直接由源电压分布确定,通过将每个源极电压抵消通过完全表征阵列内的一个或多个器件而确定的值。 所得到的方法避免了对阵列内的每个器件进行表征的必要性,从而显着地减少了测量时间。