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1. 发明申请

US20050284518A1 Compound solar cell and process for producing the same 审中-公开
标题翻译：复合太阳能电池及其制造方法
公开(公告)号：US20050284518A1
公开(公告)日：2005-12-29
申请号：US11159233
申请日：2005-06-23
申请人： Akimasa Yamada , Hitoshi Tampo , Koji Matsubara , Shigeru Niki , Keiichiro Sakurai , Shogo Ishizuka , Kakuya Iwata
发明人： Akimasa Yamada , Hitoshi Tampo , Koji Matsubara , Shigeru Niki , Keiichiro Sakurai , Shogo Ishizuka , Kakuya Iwata
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/0749 , Y02E10/541
摘要： A solar cell which comprises a back metal electrode and a light-absorbing layer comprising a p-type CIGS semiconductor on a substrate in this order, wherein the solar cell further comprises a p-type or low carrier concentration n-type semiconductor layer comprising ZnO between the light-absorbing layer and the back metal electrode, and a process for producing the solar cell.
摘要翻译：一种太阳能电池，其特征在于，包括背面金属电极和在基板上依次包含p型CIGS半导体的光吸收层，其中所述太阳能电池还包括p型或低载流子浓度的n型半导体层，其包含ZnO 在光吸收层和背面金属电极之间，以及太阳能电池的制造方法。

2. 发明申请

US20100163864A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100163864A1
公开(公告)日：2010-07-01
申请号：US12601248
申请日：2008-05-13
申请人： Hajime Shibata , Hitoshi Tampo , Koji Matsubara , Akimasa Yamada , Keiichiro Sakurai , Shogo Ishizuka , Shigeru Niki
发明人： Hajime Shibata , Hitoshi Tampo , Koji Matsubara , Akimasa Yamada , Keiichiro Sakurai , Shogo Ishizuka , Shigeru Niki
IPC分类号： H01L33/00
CPC分类号： H01L33/28
摘要： An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x
摘要翻译：本发明的目的在于提高ZnO系光半导体装置的发光效率。光学半导体器件B具有包括n型Zn1-zMgzO（势垒层）11 / Zn1-xMgxO（有源层）15 / p型Zn1-yMgyO（势垒层）17的结构，并且从活性物质发射光电极23,21分别形成在阻挡层11,17上。通过在两个电极23,21之间施加电压，从ZnO（有源层）15发射光。这里，存在x

3. 发明授权

US08304804B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08304804B2
公开(公告)日：2012-11-06
申请号：US12601248
申请日：2008-05-13
申请人： Hajime Shibata , Hitoshi Tampo , Koji Matsubara , Akimasa Yamada , Keiichiro Sakurai , Shogo Ishizuka , Shigeru Niki
发明人： Hajime Shibata , Hitoshi Tampo , Koji Matsubara , Akimasa Yamada , Keiichiro Sakurai , Shogo Ishizuka , Shigeru Niki
IPC分类号： H01L33/00
CPC分类号： H01L33/28
摘要： An object of the present invention is to increase the light emission efficiency of a ZnO-based optical semiconductor device. An optical semiconductor device B has a structure which includes n-type Zn1-zMgzO (barrier layer) 11/Zn1-zMgxO (active layer) 15/p-type Zn1-yMgyO (barrier layer) 17, and light is emitted from the active layer 15. Electrodes 23, 21 are respectively formed on barrier layers 11, 17. By applying a voltage between the two electrodes 23, 21, light is emitted from ZnO (active layer) 15. Here, there are a relationship of x
摘要翻译：本发明的目的在于提高ZnO系光半导体装置的发光效率。光学半导体器件B具有包括n型Zn1-zMgzO（势垒层）11 / Zn1-xMgxO（有源层）15 / p型Zn1-yMgyO（势垒层）17的结构，并且从活性物质发射光电极23,21分别形成在阻挡层11,17上。通过在两个电极23,21之间施加电压，从ZnO（有源层）15发射光。这里，存在x

4. 发明授权

US08012546B2 Method and apparatus for producing semiconductor films and related devices 有权
标题翻译：用于制造半导体膜及相关器件的方法和装置
公开(公告)号：US08012546B2
公开(公告)日：2011-09-06
申请号：US11843936
申请日：2007-08-23
申请人： Shogo Ishizuka , Shigeru Niki , Keiichiro Sakurai , Akimasa Yamada , Koji Matsubara
发明人： Shogo Ishizuka , Shigeru Niki , Keiichiro Sakurai , Akimasa Yamada , Koji Matsubara
IPC分类号： H05H1/24
CPC分类号： H01L31/072 , C23C14/0026 , C23C14/0623 , C23C14/243 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method for producing a semiconductor film having a chalcopyrite structure including a Ib group element, a IIIb group element and a VIb group element including selenium, the method including cracking selenium with plasma to generate radical selenium, and using the radical selenium in the process of forming the semiconductor film.
摘要翻译：一种具有包括Ib族元素，IIIb族元素和包含硒的VIb族元素的黄铜矿结构的半导体膜的半导体膜的制造方法，其包括用等离子体裂解硒以产生自由基硒的方法，以及在使用过程中使用自由基硒形成半导体膜。

5. 发明申请

US20110024859A1 PHOTOELECTRIC CONVERSION DEVICE, FABRICATION METHOD FOR THE SAME, AND SOLID STATE IMAGING DEVICE 失效
标题翻译：光电转换装置，其制造方法和固态成像装置
公开(公告)号：US20110024859A1
公开(公告)日：2011-02-03
申请号：US12937013
申请日：2009-03-30
申请人： Kenichi Miyazaki , Osamu Matsushima , Shigeru Niki , Keiichiro Sakurai , Shogo Ishizuka
发明人： Kenichi Miyazaki , Osamu Matsushima , Shigeru Niki , Keiichiro Sakurai , Shogo Ishizuka
IPC分类号： H01L31/0232 , H01L27/146 , H01L31/18
CPC分类号： H01L27/14645 , H01L31/0322
摘要： A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.
摘要翻译：光电转换装置的S / N比高，即使在低亮度下也能够提高检测效率。光电转换装置通过由黄铜矿型半导体形成的光电转换单元中的冲击电离产生增加的电荷，从而改善暗电流特性。光电转换装置包括：下电极层; 黄铜矿结构的化合物半导体薄膜设置在下电极层上并且在表面上具有高电阻率层; 以及设置在化合物半导体薄膜上的透明电极层，其中下电极层，化合物半导体薄膜和透明电极层依次层叠，并且在透明电极层和透明电极层之间施加反向偏置电压并且在化合物半导体薄膜内产生通过光电转换产生的电荷的冲击电离的乘积。也可以提供这种光电转换装置的制造方法和使用该光电转换装置的固态成像装置。

6. 发明授权

US08299510B2 Solid state imaging device and fabrication method for the same 有权
标题翻译：固态成像装置及其制造方法相同
公开(公告)号：US08299510B2
公开(公告)日：2012-10-30
申请号：US12525357
申请日：2008-02-01
申请人： Osamu Matsushima , Masaki Takaoka , Kenichi Miyazaki , Shogo Ishizuka , Keiichiro Sakurai , Shigeru Niki
发明人： Osamu Matsushima , Masaki Takaoka , Kenichi Miyazaki , Shogo Ishizuka , Keiichiro Sakurai , Shigeru Niki
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L31/18 , H01L27/14632 , H01L27/14665 , H01L27/14687 , H01L31/0322
摘要： A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit formed on a substrate; and a photoelectric conversion unit including a lower electrode layer placed on the circuit unit, a compound semiconductor thin film of chalcopyrite structure which is placed on the lower electrode layer and functions as an optical absorption layer, and an optical transparent electrode layer placed on the compound semiconductor thin film, wherein the lower electrode layer, the compound semiconductor thin film, and the optical transparent electrode layer are laminated one after another on the circuit unit.
摘要翻译：具有容易结构的固态成像装置具有从可见光到近红外光波长区域到达宽波长区域的高灵敏度，并且暗电流降低，并且提供了其制造方法。固态成像装置及其制造方法，所述固态成像装置包括：形成在基板上的电路单元; 以及光电转换单元，其包括设置在电路单元上的下电极层，放置在下电极层上并用作光吸收层的黄铜矿结构的化合物半导体薄膜和放置在化合物上的光透明电极层半导体薄膜，其中下电极层，化合物半导体薄膜和光透明电极层在电路单元上依次层叠。

7. 发明申请

US20090217969A1 Method for Manufacturing Photoelectric Converter and Photoelectric Converter 审中-公开
标题翻译：光电转换器和光电转换器的制造方法
公开(公告)号：US20090217969A1
公开(公告)日：2009-09-03
申请号：US12084281
申请日：2006-10-31
申请人： Osamu Matsushima , Masaki Takaoka , Shogo Ishizuka , Shigeru Niki , Keiichiro Sakurai
发明人： Osamu Matsushima , Masaki Takaoka , Shogo Ishizuka , Shigeru Niki , Keiichiro Sakurai
IPC分类号： H01L31/00 , H01L31/0272
CPC分类号： H01L31/0322 , H01L27/14609 , H01L27/14692 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Disclosed is a method for manufacturing a photoelectric converter wherein a lower electrode layer, a compound semiconductor thin film having a chalcopyrite structure which serves as a light absorptive layer and a light-transmitting electrode layer that are laminated to form layers are each patterned by photolithography, thereby minimizing damages to the crystals of the compound semiconductor thin film.
摘要翻译：公开了一种用于制造光电转换器的方法，其中，通过光刻将每个图案化下层电极层，具有用作光吸收层的黄铜矿结构的化合物半导体薄膜和层叠以形成层的透光电极层，从而最小化对化合物半导体薄膜的晶体的损害。

8. 发明授权

US08592933B2 Photoelectric conversion device, fabrication method for the same, and solid state imaging device 失效
标题翻译：光电转换装置及其制造方法以及固态成像装置
公开(公告)号：US08592933B2
公开(公告)日：2013-11-26
申请号：US12937013
申请日：2009-03-30
申请人： Kenichi Miyazaki , Osamu Matsushima , Shigeru Niki , Keiichiro Sakurai , Shogo Ishizuka
发明人： Kenichi Miyazaki , Osamu Matsushima , Shigeru Niki , Keiichiro Sakurai , Shogo Ishizuka
IPC分类号： H01L31/00
CPC分类号： H01L27/14645 , H01L31/0322
摘要： A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film , wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.
摘要翻译：光电转换装置的S / N比高，即使在低亮度下也能够提高检测效率。光电转换装置通过由黄铜矿型半导体形成的光电转换单元中的冲击电离产生增加的电荷，从而改善暗电流特性。光电转换装置包括：下电极层; 黄铜矿结构的化合物半导体薄膜设置在下电极层上并且在表面上具有高电阻率层; 以及设置在化合物半导体薄膜上的透明电极层，其中下电极层，化合物半导体薄膜和透明电极层依次层叠，并且在透明电极层和透明电极层之间施加反向偏置电压并且在化合物半导体薄膜内产生通过光电转换产生的电荷的冲击电离的乘积。也可以提供这种光电转换装置的制造方法和使用该光电转换装置的固态成像装置。

9. 发明申请

US20100102368A1 SOLID STATE IMAGING DEVICE AND FABRICATION METHOD FOR THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20100102368A1
公开(公告)日：2010-04-29
申请号：US12525357
申请日：2008-02-01
申请人： Osamu Matsushima , Masaki Takaoka , Kenichi Miyazaki , Shogo Ishizuka , Keiichiro Sakurai , Shigeru Niki
发明人： Osamu Matsushima , Masaki Takaoka , Kenichi Miyazaki , Shogo Ishizuka , Keiichiro Sakurai , Shigeru Niki
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/18 , H01L27/14632 , H01L27/14665 , H01L27/14687 , H01L31/0322
摘要： A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit (30) formed on a substrate; and a photoelectric conversion unit (28) including a lower electrode layer (25) placed on the circuit unit (30), a compound semiconductor thin film (24) of chalcopyrite structure which is placed on the lower electrode layer (25) and functions as an optical absorption layer, and an optical transparent electrode layer (26) placed on the compound semiconductor thin film (24), wherein the lower electrode layer (25), the compound semiconductor thin film (24), and the optical transparent electrode layer (26) are laminated one after another on the circuit unit (30).
摘要翻译：具有容易结构的固态成像装置具有从可见光到近红外光波长区域到达宽波长区域的高灵敏度，并且暗电流降低，并且提供了其制造方法。一种固态成像装置及其制造方法，所述固态成像装置包括：形成在基板上的电路单元（30）; 以及包括放置在电路单元（30）上的下电极层（25）的光电转换单元（28），放置在下电极层（25）上的黄铜矿结构的化合物半导体薄膜（24）光吸收层和放置在化合物半导体薄膜（24）上的光透明电极层（26），其中下电极层（25），化合物半导体薄膜（24）和光透明电极层 26）在电路单元（30）上依次层叠。

10. 发明申请

US20090301558A1 Photoelectric Converter and Method for Producing the Same 审中-公开
标题翻译：光电转换器及其制作方法
公开(公告)号：US20090301558A1
公开(公告)日：2009-12-10
申请号：US12084294
申请日：2006-10-31
申请人： Masaki Takaoka , Osamu Matsushima , Shogo Ishizuka , Shigeru Niki , Keiichiro Sakurai
发明人： Masaki Takaoka , Osamu Matsushima , Shogo Ishizuka , Shigeru Niki , Keiichiro Sakurai
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/0749 , H01L27/14643 , H01L27/14683 , H01L31/022466 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： A photoelectric converter includes a lower electrode layer, a compound semiconductor thin film of a chalcopyrite structure functioning as a photoabsorption layer and a light transmitting electrode layer that are sequentially laminated on a substrate. An end portion of the of compound semiconductor thin film is positioned outward beyond an end of the light transmitting electrode layer.
摘要翻译：光电转换器包括下电极层，用作光吸收层的黄铜矿结构的化合物半导体薄膜和依次层压在基板上的透光电极层。化合物半导体薄膜的端部位于透光电极层的端部的外侧。

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