会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • CERIA ABRASIVE FOR CMP
    • CERIA研磨CMP
    • WO2004101702A9
    • 2005-12-15
    • PCT/KR2004001139
    • 2004-05-14
    • K C TECH CO LTDUNIV SOGANG IND UNIV COOP FOUNPAIK UN-GYUPARK JAE-GUNKIM SANG-KYUNKATOH TAKEOPARK YONG-KOOK
    • PAIK UN-GYUPARK JAE-GUNKIM SANG-KYUNKATOH TAKEOPARK YONG-KOOK
    • C09G1/02C09K3/14H01L21/3105
    • C09G1/02C09K3/1463H01L21/31053
    • The present invention relates to a CMP abrasive comprising a ceria slurry and a chemical additive having two or more functional groups by mixing and synthesizing a polymeric molecule and a monomer . Also, the present invention relates to a method for a manufacturing CMP abrasive by providing a ceria slurry, manufacturing a chemical additive having two or more functional groups by mixing and synthesizing of the polymeric moleculeand the monomer in a reactor, and mixing said slurry and said chemical additive. Therefore, when the abrasive according to the present invention is used as an STI CMP abrasive, it is possible to apply the abrasive to the patterning process required in the very large scale integration semiconductor process. Furthermore, the CMP abrasive of the present invention has a superior removal rate, superior polishing selectivity, superior within wafer non-uniformity (WIWNU), and minimized occurrence of micro scratches.
    • 本发明涉及通过混合和合成聚合物分子和单体,其包含二氧化铈浆料和具有两个或更多个官能团的化学添加剂的CMP磨料。 另外,本发明涉及通过提供二氧化铈浆料制造CMP研磨剂的方法,通过在反应器中混合和合成聚合物分子和单体制备具有两个或多个官能团的化学添加剂,并将所述浆料和所述 化学添加剂。 因此,当将根据本发明的研磨剂用作STI CMP研磨剂时,可以将磨料施加到非常大规模的集成半导体工艺中所需的图案化工艺。 此外,本发明的CMP磨料具有优异的去除速度,优异的抛光选择性,在晶片不均匀性(WIWNU)内优异,并且最小化微小划痕的发生。