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    • 5. 发明申请
    • SPECTRAL IMAGING
    • 光谱成像
    • WO2010119358A2
    • 2010-10-21
    • PCT/IB2010/051101
    • 2010-03-15
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBHBAEUMER, ChristianHERRMANN, ChristophSTEADMAN, RogerRUETTEN, Walter
    • BAEUMER, ChristianHERRMANN, ChristophSTEADMAN, RogerRUETTEN, Walter
    • G01T1/1647G01T1/2985
    • An imaging system includes a scintillator array (202) and a digital photomultiplier array (204). A photon counting channel (212), an integrating channel (210), and a moment generating channel (214) process the output signal of the digital photomultiplier array (204). A reconstructor (122) spectrally resolves the first, the second and the third output signals. In one embodiment, a controller (232) activates the photon counting channel (212) to process the digital signal only if a radiation flux is below a predetermined threshold. An imaging system includes at least one direct conversion layer (302) and at least two scintillator layers (304) and corresponding photosensors (306). A photon counting channel (212) processes an output of the at least one direct conversion layer (302), and an integrating channel (210) and a moment generating channel (214) process respective outputs of the photosensors (306). A reconstructor (122) spectrally resolves the first, the second and the third output signals.
    • 成像系统包括闪烁体阵列(202)和数字光电倍增管阵列(204)。 光子计数通道(212),积分通道(210)和力矩产生通道(214)处理数字光电倍增管阵列(204)的输出信号。 重建器(122)对第一,第二和第三输出信号进行光谱解析。 在一个实施例中,仅当辐射通量低于预定阈值时,控制器(232)激活光子计数通道(212)才能处理数字信号。 成像系统包括至少一个直接转换层(302)和至少两个闪烁体层(304)和对应的光电传感器(306)。 光子计数通道(212)处理至少一个直接转换层(302)的输出,并且积分通道(210)和力矩产生通道(214)处理光电传感器(306)的相应输出。 重建器(122)对第一,第二和第三输出信号进行光谱解析。
    • 7. 发明申请
    • LOW OHMIC THROUGH SUBSTRATE INTERCONNECTION FOR SEMICONDUCTOR CARRIERS
    • 通过半导体载体的基板互连实现低欧姆性
    • WO2007110799A2
    • 2007-10-04
    • PCT/IB2007/050914
    • 2007-03-16
    • PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBHKONINKLIJKE PHILIPS ELECTRONICS N.V.VOGTMEIER, GereonSTEADMAN, RogerDORSCHEID, RalfJONKERS, Jeroen
    • VOGTMEIER, GereonSTEADMAN, RogerDORSCHEID, RalfJONKERS, Jeroen
    • H01L23/48
    • H01L21/76898H01L23/481H01L2224/0401H01L2224/05H01L2224/131H01L2924/014
    • It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection (610) extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon. After forming integrated components (620) on top of the front surface the substrate (600) may be thinned and the non-metallic material may be substituted with the low ohmic material, which is in particular a metallic material.
    • 描述了形成在半导体衬底(600)上的用于电子芯片的低欧姆直通晶片互连(TWI)。 TWI包括在衬底(600)的前表面和后表面之间延伸的第一连接(610)。 第一连接(610)包括填充有比多晶硅电阻率低的低欧姆材料的通孔。 TWI还包括也在前表面和后表面之间延伸的第二连接(615)。 第二连接(615)通过半导体衬底(600)的至少一部分与第一连接(610)在空间上分离。 前表面设置有集成电路布置(620),其中第一连接(610)电耦合到集成电路布置(620)的至少一个节点而不穿透集成电路布置(620)。 在处理TWI期间,通孔可以首先用非金属材料填充,例如, 多晶硅。 在前表面顶部形成集成组件(620)之后,衬底(600)可以变薄,并且非金属材料可以用特别是金属材料的低欧姆材料替代。
    • 9. 发明申请
    • X-RAY DETECTOR
    • X射线探测器
    • WO2004068168A1
    • 2004-08-12
    • PCT/IB2004/050046
    • 2004-01-22
    • PHILIPS INTELLECTUAL PROPERTY & STANDARDS GMBHKONINKLIJKE PHILIPS ELECTRONICS N.V.VOGTMEIER, GereonMORALES SERRANO, FranciscoSTEADMAN, Roger
    • VOGTMEIER, GereonMORALES SERRANO, FranciscoSTEADMAN, Roger
    • G01T1/20
    • G01T1/2018
    • The invention relates to an X-ray detector for detecting X-radiation, as used, in particular, in computer tomographic (CT) systems. The X-ray detector in accordance with the invention is composed of a photo sensor device, which comprises individual detector elements (1), above which scintillator elements (2) are disposed. These convert the incident X-ray light (6) into visible or UV light (7), which is detected by a photodiode (4) located on the detector element (1). In accordance with the invention, a micro-lens (3), which focuses the light (7) departing from the scintillator element (2) onto the photodiode (4), is disposed between the scintillator element (2) and the detector element (1). It is possible, in this manner, to use large areas of the detector element (1) for further electronic components (5) outside the photodiode (4), and, at the same time, to ensure a high DQE (Detection Quantum Efficiency) in that the light (7) departing from the scintillator element (2) is virtually fully exploited. The crosstalk from scatter radiation from adjacent detector elements is effectively prevented simultaneously.
    • 本发明涉及用于检测X射线的X射线检测器,特别是在计算机断层摄影(CT)系统中使用。 根据本发明的X射线检测器由光传感器装置组成,该光传感器装置包括单独的检测器元件(1),其上设置有闪烁体元件(2)。 这些将入射的X射线光(6)转换成由位于检测器元件(1)上的光电二极管(4)检测到的可见光或紫外光(7)。 根据本发明,将从闪烁体元件(2)离开的光(7)聚焦到光电二极管(4)上的微透镜(3)设置在闪烁体元件(2)和检测器元件( 1)。 以这种方式,可以将大面积的检测器元件(1)用于在光电二极管(4)外部的另外的电子部件(5),同时,为了确保高的DQE(检测量子效率) 因为从闪烁体元件(2)出发的光(7)实际上被充分利用。 来自相邻检测器元件的散射辐射的串扰被有效地同时防止。