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1. 发明公开

EP0353054A3 Quantum well structure and semiconductor device using the same 失效
标题翻译：量子阱结构和半导体器件使用它
公开(公告)号：EP0353054A3
公开(公告)日：1991-03-13
申请号：EP89307615.8
申请日：1989-07-27
申请人： KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA
发明人： Akiba, Shigeyuki , Usami, Masashi , Matsushima, Yuichi , Sakai, Kazuo , Utaka, Katsuyuki
IPC分类号： H01L33/00 , H01S3/19
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01L33/26
摘要： A quantum well structure comprising a quantum well layer (3,9) of thickness substantially equal to the de Broglie wavelength of electrons and carrier confinement layers (2,4) of an energy gap greater than that of the quantum well layer. A second material (9) of a lattice constant different from that of a first material (3) primarily for the quantum well layer, is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer. A semiconductor device employing such a quantum well structure is so constructed as to utilize its physical phenomenon which is caused by the energy levels in the forbidden band. This allows for ease of fabrication of an intermediate infrared or blue light emitting device.

2. 发明公开

EP0353054A2 Quantum well structure and semiconductor device using the same 失效
标题翻译： Potentialtopfstruktur und Halbleiteranordnung。
公开(公告)号：EP0353054A2
公开(公告)日：1990-01-31
申请号：EP89307615.8
申请日：1989-07-27
申请人： KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA
发明人： Akiba, Shigeyuki , Usami, Masashi , Matsushima, Yuichi , Sakai, Kazuo , Utaka, Katsuyuki
IPC分类号： H01L33/00 , H01S3/19
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01L33/26
摘要： A quantum well structure comprising a quantum well layer (3,9) of thickness substantially equal to the de Broglie wavelength of electrons and carrier confinement layers (2,4) of an energy gap greater than that of the quantum well layer. A second material (9) of a lattice constant different from that of a first material (3) primarily for the quantum well layer, is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer. A semiconductor device employing such a quantum well structure is so constructed as to utilize its physical phenomenon which is caused by the energy levels in the forbidden band. This allows for ease of fabrication of an intermediate infrared or blue light emitting device.
摘要翻译：一种量子阱结构，包括厚度基本上等于电子的德布罗意波长的量子阱层（3,9）和能量间隙大于量子阱层的能隙的载流子限制层（2,4）。与量子阱层主要用于第一材料（3）的晶格常数不同的第二材料（9）设置在量子阱层中，以在第一材料的晶格周期内提供相移从而在量子阱层的禁带中形成能级。使用这种量子阱结构的半导体器件被构造成利用其由禁带中的能级引起的物理现象。这允许容易地制造中间红外或蓝色发光器件。

3. 发明公开

EP0314490A3 Semiconductor laser 失效
标题翻译：半导体激光
公开(公告)号：EP0314490A3
公开(公告)日：1989-07-26
申请号：EP88310145.3
申请日：1988-10-28
申请人： KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA
发明人： Utaka, Katsuyuki , Sakai, Kazuo , Matsushima, Yuichi
IPC分类号： H01S3/06 , H01S3/085 , H01S3/103
CPC分类号： H01S5/06258 , H01S5/06255 , H01S5/10 , H01S5/1025 , H01S5/1039 , H01S5/12 , H01S5/125 , H01S5/14
摘要： A variable wavelength semiconductor laser in which light emitting regions (B₁,B₂), waveguide regions (C₁,C₂) and an active filter region (A₁) including a diffraction grating (5) equipped with a filter function are integrated on a single substrate, whereby only one resonance wavelength is selected to ensure a stable laser operation at a single wavelength of a small oscillation line-width. Further, both light emitting (B₁,B₂) and waveguide regions (C₁,C₂) are disposed on both sides of the active filter region (A₁) substantially symmetrically with respect thereto, thereby allowing ease in adjusting the refractive indices of the respective regions.
摘要翻译：一种可变波长半导体激光器，其中发光区域（B 1，B 2），波导区域（C 1，C 2）和包括具有滤光功能的衍射光栅（5）的有源滤光区域（A 1）被集成在单个衬底上，由此仅选择一个谐振波长以确保在小的振荡线宽的单个波长处的稳定的激光器操作。此外，发光（B 1，B 2）和波导区域（C 1，C 2）都设置在有源滤波器区域（A 1）的相对于其基本对称的两侧，从而易于调节各区域的折射率。

4. 发明公开

EP0300790A2 Semiconductor laser 失效
标题翻译：半导体激光
公开(公告)号：EP0300790A2
公开(公告)日：1989-01-25
申请号：EP88306703.5
申请日：1988-07-21
申请人： KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA
发明人： Utaka, Katsuyuki , Sakai, Kazuo , Matsushima, Yuichi
IPC分类号： H01S3/06 , H01S3/103
CPC分类号： H01S5/06258 , H01S5/10 , H01S5/1025 , H01S5/12 , H01S5/14 , Y10S372/704
摘要： A semiconductor laser in which a light emitting region (A) having a light emitting layer (3,4) and a waveguide region (B,C) having a waveguide layer (6,7) which is coupled to at least one side of the light emitting layer with a high efficiency, are integrated on the same substrate. The light emitting region includes an active filter section (A₂) having a diffraction grating (5) equipped with a band-pass filter function. The light emitting region and the waveguide region are electrically isolated (14,15,16) and are each provided with an electrode (10,11,12,13). The oscillation wavelength of the semiconductor laser is changed by changing the refractive indices of at least the waveguide region and the active filter section through voltage application or current injection to the electrodes, thereby producing a narrow-linewidth, single-wavelength, oscillation output light of a wavelength which corresponds to the transmission wavelength of the active filter section determined by the preset refractive indices of the waveguide region and the active filter section.
摘要翻译：一种半导体激光器，其中具有发光层（3,4）的发光区（A）和具有波导层（6,7）的波导区（B，C），该波导层耦合到高效率的发光层集成在同一衬底上。发光区域包括具有配备有带通滤波器功能的衍射光栅（5）的有源滤波器部分（A 2）。发光区域和波导区域电隔离（14,15,16）并且每个都设置有电极（10,11,12,13）。通过施加电压或向电极注入电流，通过至少改变波导区域和有源滤波器部分的折射率来改变半导体激光器的振荡波长，由此产生窄线宽，单波长的振荡输出光该波长对应于由波导区域和有源滤波器部分的预设折射率确定的有源滤波器部分的透射波长。

5. 发明授权

EP0353054B1 Quantum well structure and semiconductor device using the same 失效
标题翻译：量子阱结构和半导体器件
公开(公告)号：EP0353054B1
公开(公告)日：1997-01-02
申请号：EP89307615.8
申请日：1989-07-27
申请人： KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA
发明人： Akiba, Shigeyuki , Usami, Masashi , Matsushima, Yuichi , Sakai, Kazuo , Utaka, Katsuyuki
IPC分类号： H01L33/00 , H01S3/19
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01L33/26

6. 发明公开

EP0342953A2 Semiconductor optical amplifying element 失效
标题翻译： OptischerHalbleiterverstärker。
公开(公告)号：EP0342953A2
公开(公告)日：1989-11-23
申请号：EP89304979.1
申请日：1989-05-17
申请人： KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA
发明人： Utaka, Katsuyuki , Matsushima, Yuichi , Sakai, Kazuo , Akiba, Shigeyuki
IPC分类号： H01S3/00 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2027 , H01S5/2203 , H01S5/34306 , H01S5/34313 , H01S5/50
摘要： A semiconductor optical amplifying element which has a semiconductor multilayer structure including at least a first semiconductor layer (4) for providing an optical gain in response to the injection of carriers thereinto, and a p-side electrode (7) and an n-side electrode (8) for the carrier injection. A first and a second reflecting surface (7,9) are disposed thickwisely of the semiconductor multilayer structure and opposite to each other thereacross. The element is designed so that light incident thereon from the thickwise direction of the semiconductor multilayer structure is amplified by propagating through the element perpendicularly to the thickwise direction of the semiconductor multilayer structure while being multiple-reflected between the first and the second reflecting surfaces (7, 9)
摘要翻译：一种半导体光放大元件，其具有半导体多层结构，至少包括用于响应于载流子注入而提供光增益的第一半导体层（4），以及p侧电极（7）和n侧电极（8）用于载体注入。第一和第二反射表面（7,9）均布置在半导体多层结构的厚度上并且相互相对。元件被设计成使得从半导体多层结构的厚度方向入射到其上的光通过垂直于半导体多层结构的厚度方向传播通过元件而被放大，同时在第一和第二反射表面（7）之间被多重反射，9）

7. 发明公开

EP0279520A2 Optical waveguide switch 失效
标题翻译： Optischer Wellenleiterschalter。
公开(公告)号：EP0279520A2
公开(公告)日：1988-08-24
申请号：EP88300488.9
申请日：1988-01-21
申请人： KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA
发明人： Utaka, Katsuyuki , Sakai, Kazuo , Matsushima, Yuichi
IPC分类号： G02B6/12 , G02B26/02 , G02F1/01 , G02F1/19 , G02F1/315
CPC分类号： G02B6/29338 , G02F1/3515
摘要： An optical waveguide switch in which at least two optical waveguides intersect at a predetermined angle to each other to provide, on both sides of the intersecting region, incoming side optical waveguides (1, 2) for receiving incident light and outgoing side optical waveguides (1ʹ, 2ʹ) for outputting guided light and in which the incident light is input into one of the incoming side optical waveguides and is output from a desired one of the outgoing side optical waveguides.
An optically non-linear material (3) whose refractive index undergoes a substantial variation, depending on the intensity of light, is disposed in the intersecting region and a loop (4) is provided in association with at least one of the incoming side optical waveguides (1), for essentially branching the guided light in said outgoing side optical waveguide (1ʹ) for feedback to said at least one incoming side optical waveguide (1).
摘要翻译：一种光波导开关，其中至少两个光波导彼此以预定角度相交，以在交叉区域的两侧提供用于接收入射光和出射侧光波导（1）的入射侧光波导（1,2） '，2'），用于输出引导光，并且其中入射光被输入到入射侧光波导中的一个中，并且从出射侧光波导中期望的一个输出。根据光的强度折射率经历实质变化的光学非线性材料（3）设置在交叉区域中，并且与入射侧光波导中的至少一个相关联地设置环路（4）（1），用于将所述出射侧光波导（1'）中的引导光基本上分支用于反馈到所述至少一个入射侧光波导（1）。

8. 发明公开

EP0314490A2 Semiconductor laser 失效
标题翻译： Halbleiterlaser。
公开(公告)号：EP0314490A2
公开(公告)日：1989-05-03
申请号：EP88310145.3
申请日：1988-10-28
申请人： KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA
发明人： Utaka, Katsuyuki , Sakai, Kazuo , Matsushima, Yuichi
IPC分类号： H01S3/06 , H01S3/085 , H01S3/103
CPC分类号： H01S5/06258 , H01S5/06255 , H01S5/10 , H01S5/1025 , H01S5/1039 , H01S5/12 , H01S5/125 , H01S5/14
摘要： A variable wavelength semiconductor laser in which light emitting regions (B₁,B₂), waveguide regions (C₁,C₂) and an active filter region (A₁) including a diffraction grating (5) equipped with a filter function are integrated on a single substrate, whereby only one resonance wavelength is selected to ensure a stable laser operation at a single wavelength of a small oscillation line-width. Further, both light emitting (B₁,B₂) and waveguide regions (C₁,C₂) are disposed on both sides of the active filter region (A₁) substantially symmetrically with respect thereto, thereby allowing ease in adjusting the refractive indices of the respective regions.
摘要翻译：在单个基板上集成有发光区域（B1，B2），波导区域（C1，C2）和包括具有滤光器功能的衍射光栅（5）的有源滤光器区域（A1））的可变波长半导体激光器，从而仅选择一个共振波长以确保在小的振荡线宽度的单个波长处的稳定的激光操作。此外，发光（B1，B2）和波导区域（C1，C2）两者相对于其大致对称地设置在有源滤波器区域（A1）的两侧，由此容易调节各个区域的折射率。

9. 发明授权

EP0300790B1 Semiconductor laser 失效
公开(公告)号：EP0300790B1
公开(公告)日：1993-09-29
申请号：EP88306703.5
申请日：1988-07-21
申请人： KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA
发明人： Utaka, Katsuyuki , Sakai, Kazuo , Matsushima, Yuichi
IPC分类号： H01S3/06 , H01S3/103
CPC分类号： H01S5/06258 , H01S5/10 , H01S5/1025 , H01S5/12 , H01S5/14 , Y10S372/704

10. 发明授权

EP0276115B1 Optical switch 失效
标题翻译：光开关
公开(公告)号：EP0276115B1
公开(公告)日：1993-03-10
申请号：EP88300384.0
申请日：1988-01-19
申请人： KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA
发明人： Sakai, Kazuo , Matsushima, Yuichi , Utaka, Katsuyuki
IPC分类号： G02F1/015 , G02F1/29
CPC分类号： B82Y20/00 , G02F1/01708 , G02F1/3138 , G02F2001/0152

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