专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH09186208A METHOD OF SORTING DEFECT OF SEMICONDUCTOR WAFER AND APPARATUS THEREFOR 失效
公开(公告)号：JPH09186208A
公开(公告)日：1997-07-15
申请号：JP26186996
申请日：1996-10-02
申请人： KOBE STEEL LTD , TEXAS INSTRUMENTS JAPAN , K T I SEMICONDUCTOR KK
发明人： MORIMOTO TSUTOMU , SUMINOE SHINGO , GOTO YUICHIRO , TAKAHASHI EIJI , KANBE AKIFUMI , OKAMOTO HIROSHI
IPC分类号： G01B11/30 , G01N21/88 , G01N21/93 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus which enable high-level sorting of defects of semiconductor wafers. SOLUTION: In an apparatus A, luminance or the like of a wiring portion or a non-wiring portion in a defective region in an image of a wafer 1 inputted by an image intake section 2 is extracted by an image processing section 3, and the type of the defect is discriminated by a computer 4 on the basis of the luminance or the like, so that the result of discrimination is outputted by an output unit 5. Thus, not only defect shape decision as in conventional examples but also more advanced defect sort may be carried out, such as, specifying the process in which the defect is generated.

2. 发明专利

JPH09191037A REMAINING DAMAGE MEASURING METHOD OF WAFER EDGE PART AND ITS APPARATUS 失效
公开(公告)号：JPH09191037A
公开(公告)日：1997-07-22
申请号：JP27555696
申请日：1996-09-26
申请人： SHINETSU HANDOTAI KK , KOBE STEEL LTD
发明人： MASUMURA HISASHI , KUDO HIDEO , SUMINOE SHINGO , TSUNAKI HIDETOSHI , HIRAO YUJI , MORIOKA AKITAKA
IPC分类号： G01N29/00 , G01N21/00 , G01N21/88 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To effectively use a non-contact and non-destructive optoacoustic measuring method of high accuracy, and measure remaining damages on a wafer edge part with high efficiency, by irradiating a laser beam pumping part with probe light for measurement, and measuring thermal response due to pumping light, by a laser interference method. SOLUTION: An edge part 31 of a semiconductor wafer is divided into 3 part positions, i.e., an upper slant surface, a lower slant surface and a circular arc end portion. To the respective surfaces, a laser beam pumping part 13 is irradiated with probe light 10 for measurement. Thermal response to an exciting light 22 is measured by a laser interference method. Crystal damages are estimated by the above optoacuostic measuring method. For example, an He-Ne laser light is used as the probe light, and divided into 2 frequency lights different in frequency by an acoustooptic modulator 11. With one of the lights, the laser light pumping part 13 is irradiated by a semitransparent mirror 12, and a reflected light beam 20 is obtained. A reference mirror 14 is irradiated with the other light, and a reflected light beam 21 is obtained. From the reflected beam lights 20 and 21, an interference signal 23 is obtained by a photoelectric transducer 15.

3. 发明专利

JPH08335618A METHOD AND APPARATUS FOR MEASURING LIFETIME OF CARRIERS IN SEMICONDUCTOR SAMPLE 失效
公开(公告)号：JPH08335618A
公开(公告)日：1996-12-17
申请号：JP13903695
申请日：1995-06-06
申请人： KOBE STEEL LTD , JIENESHISU TECHNOL KK
发明人： YOSHIDA NAOYUKI , TAKAMATSU HIROYUKI , SUMINOE SHINGO , KAWADA YUTAKA , HASHIZUME HIDEHISA , OSHIMA FUTOSHI , HIRAO YUJI
IPC分类号： G01N21/88 , G01N21/00 , G01N21/956 , G01R31/265 , G01R31/28 , H01L21/66
摘要： PURPOSE: To measure the lifetime of carriers in semiconductor sample, without giving the influence of the surface recombination on the measurement. CONSTITUTION: The surface of a semiconductor sample is previously passivated, using a soln. contg. an electrolyte (S1), an exciting light is irradiated on the passivated structure of the sample with irradiating of a microwave thereon (S2, S3), the transmitted light or reflected light from the sample is detected (S4), and the lifetime of carriers induced in the sample is machined on the basis of the variation of the transmitted or reflected wave of the microwave (S5) while a stationary bias light having specified light intensity, separated from the exciting light, is irradiated on the surface of the sample (S3') whereby the lifetime of the carriers in the sample can be machined at high accuracy.

4. 发明专利

JPH0854234A THREE-DIMENSIONAL COORDINATE POSITION MEASURING METHOD 失效
公开(公告)号：JPH0854234A
公开(公告)日：1996-02-27
申请号：JP19040094
申请日：1994-08-12
申请人： KOBE STEEL LTD , SHINKO PLANT KENSETSU KK
发明人： YAMAGUCHI AKASHI , YAMAZAKI SATOSHI , SUMINOE SHINGO , YOSHIDA TAIZO
IPC分类号： G01C15/00 , G01B11/00 , G01C3/06
摘要： PURPOSE:To obtain a three-dimensional coordinate position measuring method in which the error due to thermal deformation caused by variation of the atmospheirc temperature or vibration at the time of movement can be corrected at the spot immediately before taking a measurement and the three-dimensional coordinate position can be measured conveniently. CONSTITUTION:Light is projected to first, second and third targets 21, 22 and 23 for which the true value of distance from a reference axis 20 connecting the centers of rotation 4a, 7a of first and second mirrors are known and the light projection angles and the image pickup angles are measured. Error amounts are then operated, respectively, based on the measurements and the coordinate position of a spot image on an object is corrected using the error amounts. This constitution realizes a highly accurate measurement.

5. 发明专利

JPH06201620A METHOD AND APPARATUS FOR EVALUATING THERMOPHYSICAL PROPERTIES OF SAMPLE 失效
公开(公告)号：JPH06201620A
公开(公告)日：1994-07-22
申请号：JP155993
申请日：1993-01-08
申请人： KOBE STEEL LTD
发明人： SUMINOE SHINGO , TAKAMATSU HIROYUKI , MORIMOTO TSUTOMU
IPC分类号： G01N21/00 , G01N25/16
摘要： PURPOSE:To measure the ture thermal expansion amount of a sample by obtaining the refractive index, the temperature gradient of the index and the thermal diffusion length of gas corresponding to the pressure of gas in contact with the sample, and correcting the thermal expansion amount of the samle based on the values. CONSTITUTION:The pressure of the air in a chamber 6 in contact with a sample such as of silicon 8 is measured by a pressure gauge 10, and the refractive index, the temperature gradient of the index and the thermal diffusion length of the air corresponding to the pressure are obtained. The increasing rate Ra of the phase change when the sample 8 in the air is measured can be obtained by using these values. The rate Ra is equal to the increasing rate of the apparent thermal expansion amount. The surface of the sample 8 is irradiated with the exciting light from a pump laser 1 to generate a thermal expansion vibration. It is measured by a laser interferometer 5 using a probe laser 4 thereby to obtain the thermal expansion amount of the sample 8. It is corrected by the rate Ra thereby to obtain the true thermal expansion amount of the sample 8. These series of calculations are executed by a processing program in a personal computer 13.

6. 发明专利

JPH04168309A FORM MEASURING APPARATUS BY OPTICAL CUTTING METHOD 失效
公开(公告)号：JPH04168309A
公开(公告)日：1992-06-16
申请号：JP29696690
申请日：1990-10-31
申请人： KOBE STEEL LTD
发明人： JIN YASUHARU , NISHIMOTO YOSHIRO , SUMINOE SHINGO , GOTO YUICHIRO
IPC分类号： G01B11/24
摘要： PURPOSE:To secure a required measuring resolution and to obtain an image of a light cutting line magnified in the lateral or longitudinal direction of the viewfield of a camera by using a lens device which forms an image with unequal magnifications in the lateral and longitudinal directions and the projecting side of a curved face of which is directed to an object to be measured. CONSTITUTION:A lens device 5 forms an image with unequal magnifications between the longitudinal and lateral directions. In a frame body of the device 5 detachable to a camera lens 2a, there are fitted sequentially from a lens 2, a group of lenses 5a at the side of the camera lens and a group of lenses 5b at the side of an object to be measured. The principal planes of the two groups of lenses is spaced a distance (d). The group 5a is constituted of a cylindrical double-face convex lens, while the group 5b is comprised of two cylindrical plano-concave lenses. The surface of the same distance from the front and rear surfaces of the cylindrical plano-concave lens is a curved face. The projecting side of the curved face of each plano-concave lens is directed to an object A to be measured while the lens is held in the posture assuming the lens effect in the lateral direction of the viewfield of the camera 2. Accordingly, the required measuring resolution is secured in the longitudinal direction of the viewfield of the camera, and an image of an optical cutting line all over the measuring area can be obtained.

7. 发明专利

JPH04167989A TWO BEAM LASER WELDING METHOD 失效
公开(公告)号：JPH04167989A
公开(公告)日：1992-06-16
申请号：JP29674790
申请日：1990-10-31
申请人： KOBE STEEL LTD
发明人： SUMINOE SHINGO , SAKAI YOSHIYA , YOSHINO FUMITO , SHIMIZU HIROYUKI
IPC分类号： B23K26/064 , B23K26/067 , B23K26/21
摘要： PURPOSE:To obtain the prescribed irradiating width in preheating treatment, after-heat treatment or main welding and to execute good welding at high velocity by using optical system intentionally developing astigmatism and positioning the first focal line or the second focal line to welding part or heat treatment part for a material to be welded. CONSTITUTION:The optical system intentionally developing astigmatism is used, and by positioning the first focal line F1 or the second focal line F2 to the welding part or the heat treatment part for the material to be welded, the welding is executed. In the first focal line or the second focal line in the optical system developing the astigmatism, slender focal line is generally developed. On these focal lines, as the irradiating beam source is varied in proportion to liner of length (irradiating width) to the longitudinal direction, while securing the necessary irradiating intensity, the irradiating width can be optionally adopted to wide. In accordance with the irradiating width in each focal line, the first focal line or the second focal line can be used to the preheating treatment, after-heat treatment or the main welding. By this method, the good welding is executed at high velocity without beeing influenced by winding deform, diameter, etc., of the wire.

8. 发明专利

JP2011082312A Device and method for measuring semiconductor carrier life 有权
标题翻译：用于测量半导体载体寿命的装置和方法
公开(公告)号：JP2011082312A
公开(公告)日：2011-04-21
申请号：JP2009232880
申请日：2009-10-06
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： HAYASHI KAZUYUKI , TAKAMATSU HIROYUKI , FUKUMOTO YOSHITO , SUMINOE SHINGO
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor carrier life measuring device and method allowing measurement in a production line, and allowing more accurate measurement of the carrier life with no need of preliminary pretreatment and assumption of a diffusion coefficient as conventionally performed. SOLUTION: The semiconductor carrier life measuring device A utilizes a microwave photo-conduction attenuating method. When a measured sample X of a semiconductor is in a first surface recombination velocity state, the measured sample X is irradiated with at least two kinds of lights having mutually different wavelengths by a light application section 1 and is irradiated with measuring waves by a measuring wave input/output section 2 to obtain a first difference in a time-based relative change of reflected waves or transmitted waves detected by a detection section 3, a second difference in a second surface recombination velocity state is obtained like the first difference, and the carrier life of the measured sample X is obtained based on the first difference and the second difference. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体载体寿命测量装置和方法，其允许在生产线中进行测量，并且允许更准确地测量载体寿命，而不需要预先预处理和假定如以往进行的扩散系数。解决方案：半导体载体寿命测量装置A利用微波光导衰减方法。当半导体的测量样本X处于第一表面复合速度状态时，通过光施加部分1用至少两种具有相互不同波长的光照射测量样品X，并通过测量波照射测量波输入/输出部分2以获得由检测部分3检测的反射波或透射波的基于时间的相对变化的第一差异，获得与第一差异相似的第二表面复合速度状态的第二差异，并且载体基于第一差异和第二差异获得测量样本X的寿命。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2000183123A METHOD AND DEVICE FOR EVALUATING IRON CONCENTRATION OF SILICON SEMICONDUCTOR 失效
公开(公告)号：JP2000183123A
公开(公告)日：2000-06-30
申请号：JP16393499
申请日：1999-06-10
申请人： KOBE STEEL LTD , GENESIS TECHNOLOGY KK
发明人： TAKAMATSU HIROYUKI , KUSUMI YUKIHIRO , SUMINOE SHINGO , IBA KUNIO , OSHIMA FUTOSHI , HASHIZUME HIDEHISA
IPC分类号： G01N21/63 , G01N21/00 , G01N22/00 , G01N27/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method and device for evaluating an iron concentration of a silicon semiconductor wherein the ion concentration in a semiconductor sample is easily measured at high precision, while preventing introduction of additional contamination into the semiconductor sample. SOLUTION: When a P-type silicon semiconductor sample contaminated with iron is continuously irradiated with light, Fe-B in the sample is gradually dissociated. When an evaluation value DFe=(1/τ1)-(1/τ2) is determined from the recombination life time τ1 of the Fe-B before dissociation and the recombination life time (saturation value) τ2 after dissociation, the DFe is correlated with iron concentration. With a relationship between the evaluation value DFe and iron concentration determined as a calibration curve in advance, the recombination life time τ1 of Fe-B before dissociation under optical irradiation and the combination life time (saturation value) τ2 after dissociation are measured, which are collated to the calibration curve for evaluating the iron concentration.

10. 发明专利

JPH11201905A SURFACE INSPECTING DEVICE 失效
公开(公告)号：JPH11201905A
公开(公告)日：1999-07-30
申请号：JP393498
申请日：1998-01-12
申请人： KOBE STEEL LTD
发明人： MORIMOTO TSUTOMU , SUMINOE SHINGO , WASA YASUHIRO , TAKAOKA KATSUYA , TAKAHASHI EIJI
IPC分类号： G01B11/30 , G01N21/88
摘要： PROBLEM TO BE SOLVED: To provide a surface inspecting device capable of accurately detecting only the projected and recessed state of the surface of an object to be inspected without being affected by a lowly reflective part such as a stain on the surface of the object to be inspected. SOLUTION: A light source 2 is constituted so that the location of the light source 2 can be moved to La and Lb. By this, reflected light only from a different part of a defect part (projected and recessed part) among reflected light from the surface 1 of an object to be inspected is shielded by a pinhole 6, light reception at the CCD camera 8 is blocked, and the part appears as a dark part in each image obtained by a CCD camera 8. In other words, a different part of the same projected and recessed part appears as a dark part in every image. A lowly reflective part on the surface 1 of the object to be inspected appears as a dark part in an image as well at this time, but this commonly appears in every image. An image processing device 11 calculates the differences in the luminance distribution of above-mentioned each image.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式