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1. 发明专利

JPH10144778A ELECTROSTATIC CHUCK 失效
公开(公告)号：JPH10144778A
公开(公告)日：1998-05-29
申请号：JP30218496
申请日：1996-11-13
申请人： KOBE STEEL LTD , SHINKO KOBELCO TOOL KK , APPLIED MATERIALS JAPAN
发明人： SUGIYAMA NARIMASA , NOZAWA TOSHIHISA , IKEDA TSUGUMOTO , HISAMOTO ATSUSHI , ONISHI TAKASHI , KANAMARU MORIYOSHI , KUMAGAI HIROMI , ARAI IZUMI
IPC分类号： B23Q3/15 , H01L21/68 , H01L21/683 , H02N13/00
摘要： PROBLEM TO BE SOLVED: To provide an electrostatic chuck which is stable in attraction and causes no damage to adhesive agent used for bonding a dielectric plate and a board together. SOLUTION: A disc-like dielectric plate 1 of insulating ceramics and a disc- like board 2 are jointed together, and an electrode 3 is formed between the dielectric plate 1 and the disc-like board 2 to form an electrostatic chuck, wherein one or more bent parts are provided to a joint boundary between the dielectric plate 1 and the board 2 at the peripheral part of the electrostatic chuck and a joint boundary between the opening edge of a gas inlet through-hole 7 provided to the dielectric plate 1 and the board 2, and the open ends S of the joint boundaries are so constituted as to get away from the suction surface 1a of the dielectric plate 1. By this setup, adhesive agent can be protected against damage, and the electrostatic chuck of this constitution is enhanced enough in attraction to a semiconductor wafer 6.

2. 发明专利

JPH11246263A PRODUCTION OF ALUMINA CERAMICS EXCELLENT IN PLASMA RESISTANCE 失效
公开(公告)号：JPH11246263A
公开(公告)日：1999-09-14
申请号：JP5497698
申请日：1998-03-06
申请人： KOBE STEEL LTD , SHINKO KOBELCO TOOL KK
发明人： KANAMARU MORIYOSHI , HISAMOTO ATSUSHI , NAGAHAMA MUTSUHISA , SUGIYAMA NARIMASA
IPC分类号： C04B35/10
摘要： PROBLEM TO BE SOLVED: To produce alumina ceramics exhibiting superior plasma resistance in a process for producing a semiconductor, a liq. crystal display or the like by a general sintering method without adopting a special method such as a single crystal pulling method. SOLUTION: When alumina powder is compacted and sintered to produce alumina ceramics, sintering is carried out in a nitrogen-contg. inert atmosphere. The partial pressure of nitrogen in the inert atmosphere is desirably >=0.5 atm and the sintering temp. is preferably 1,400-1,900 deg.C.

3. 发明专利

JPH10261697A ELECTROSTATIC CHUCK 失效
公开(公告)号：JPH10261697A
公开(公告)日：1998-09-29
申请号：JP6630997
申请日：1997-03-19
申请人： KOBE STEEL LTD , SHINKO KOBELCO TOOL KK
发明人： IKEDA TSUGUMOTO , KANAMARU MORIYOSHI , HISAMOTO ATSUSHI , SUGIYAMA NARIMASA
IPC分类号： B23Q3/15 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To obtain an electrostatic chuck which is operable even in a high temperature region in which a stabilized attraction force can be ensured without possibility of heavy metal contamination by employing one side of a planar sintered ceramic as an adsorbing face and forming an insulation layer on the other side thereof by spraying an insulating material through an electrode. SOLUTION: Upper face side of a ceramic plate 5 serves as an adsorbing face 7, while an electrode 2 is provided on an opposite side and covered with an insulation layer 8 formed by spraying a material. The electrode 2 is provided with a part 3 for supplying power externally and a matter to be attracted, i.e., a semiconductor wafer 6, can be attracted onto the adsorbing face 7. In order to decrease the distance between the adsorbing face 7 and the electrode 2 while sustaining fluctuation, the ceramic plate 5 is machined to have a specified thickness and one side thereof is employed as an attraction face. Furthermore, after an electrode 2 is formed, it is covered with an insulating layer 8 formed by spraying.

4. 发明专利

JPH10279349A ALUMINA CERAMIC EXCELLENT IN PLASMA RESISTANCE 失效
公开(公告)号：JPH10279349A
公开(公告)日：1998-10-20
申请号：JP2348998
申请日：1998-02-04
申请人： KOBE STEEL LTD , SHINKO KOBELCO TOOL KK
发明人： KANAMARU MORIYOSHI , NAGAHAMA MUTSUHISA , HISAMOTO ATSUSHI , NOZAWA TOSHIHISA , SUGIYAMA NARIMASA
IPC分类号： C04B35/10 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To produce an alumina ceramic having an excellent plasma resistance in the production process of a semiconductor, a liq. crystal display, etc., by adopting general sintering method without adopting a special method such as single crystal pulling up method. SOLUTION: This alumina ceramics contains aluminum in a boundary layer containing a silica glass. The alumina ceramic is obtained by sintering an alumina ceramic material containing the silica glass in the boundary layer in nitrogen. In such a case, the aluminum and the nitrogen are incorporated in the boundary layer. Also an average grain size of the alumina crystal is kept to

5. 发明专利

JPH0995767A COATING FILM EXCELLENT IN CORROSION RESISTANCES TO HALOGEN GAS AND HALOGEN PLASMA, AND LAMINATED STRUCTURE FORMED WITH THE COATING FILM 失效
公开(公告)号：JPH0995767A
公开(公告)日：1997-04-08
申请号：JP25658495
申请日：1995-10-03
申请人： KOBE STEEL LTD , SHINKO KOBELCO TOOL KK
发明人： HISAMOTO ATSUSHI , IKEDA TSUGUMOTO , ONISHI TAKASHI , YAMAMOTO MASATAKE , ITAYAMA KATSUHIRO
IPC分类号： C23C14/08 , C23C14/35 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To produce a coating film capable of showing excellent corrosion resistances to halogen gases and halogen plasma at all times and to produce a laminated structure. SOLUTION: This is an Al oxide thin film formable on the face to be the inside of a chamber of a window material made of transparent ceramics such as molten quartz glass or on the other various substrates. It is the one showing denseness in such a manner that the content of Ar contained as impurities is regulated to 0.001 to 5atm% or that the number of the parts recognized as ruggedness appeared on the surface by phosphoric acid series etching is regulated to >=100 pieces on the average in the field of 30×50μm (SEM: 2,000 times). Moreover, for showing the above characteristics, preferably the Al oxide is substantially composed of amorphous one.

6. 发明专利

JPH0995766A COATING FILM EXCELLENT IN CORROSION RESISTANCES TO HALOGEN GAS AND HALOGEN PLASMA, AND LAMINATED STRUCTURE FORMED WITH THE COATING FILM 失效
公开(公告)号：JPH0995766A
公开(公告)日：1997-04-08
申请号：JP25658395
申请日：1995-10-03
申请人： KOBE STEEL LTD , SHINKO KOBELCO TOOL KK
发明人： IKEDA TSUGUMOTO , HISAMOTO ATSUSHI , ONISHI TAKASHI , YAMAMOTO MASATAKE , ITAYAMA KATSUHIRO
IPC分类号： C23C14/08 , C23C14/35 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a coating film constitution showing excellent corrosion resistance by specifying the half-width in X-ray diffraction of a thin film layer. SOLUTION: For stably and effectively showing corrosion resistances to halogen gases and halogen plasma, as for the film quality of an Al oxide thin film, it is needed that the peak less than 5 in the half-width in X-ray diffraction is not shown, namely, it is substantially composed of amorphous one. The thickness of the coating film is preferably regulated to 0.1 to 20μm. The coating film is formed on a substrate by a sputtering method. The laminated structure is produced by forming the coating film on the substrate. Thus, the objective coating film constitution showing excellent corrosion resistances to halogen gases and halogen plasma and the objective laminated structure formed with the above film can be provided.

7. 发明专利

JPH0995765A COATING FILM EXCELLENT IN CORROSION RESISTANCES TO HALOGEN GAS AND HALOGEN PLASMA, AND LAMINATED STRUCTURE FORMED WITH THE COATING FILM 失效
公开(公告)号：JPH0995765A
公开(公告)日：1997-04-08
申请号：JP25658295
申请日：1995-10-03
申请人： KOBE STEEL LTD , SHINKO KOBELCO TOOL KK
发明人： IKEDA TSUGUMOTO , HISAMOTO ATSUSHI , ONISHI TAKASHI , YAMAMOTO MASATAKE , ITAYAMA KATSUHIRO
IPC分类号： C23C14/08 , C23C14/35 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a coating film constitution which exhibits excellent corrosion resistance to plasma by specifying the atomic ratio of O/Al and specifying the half-width in X-ray diffraction. SOLUTION: This coating film is composed of the oxide of Al. The atm. ratio of O/Al of the thin film layer is >=1.3 to

8. 发明专利

JPH0995764A COATING FILM EXCELLENT IN CORROSION RESISTANCES TO HALOGEN GAS AND HALOGEN PLASMA, AND LAMINATED STRUCTURE FORMED WITH THE COATING FILM 失效
公开(公告)号：JPH0995764A
公开(公告)日：1997-04-08
申请号：JP25658195
申请日：1995-10-03
申请人： KOBE STEEL LTD , SHINKO KOBELCO TOOL KK
发明人： HISAMOTO ATSUSHI , IKEDA TSUGUMOTO , ONISHI TAKASHI , ITAYAMA KATSUHIRO , YAMAMOTO MASATAKE
IPC分类号： C23C14/08 , C23C14/35 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To enable the composition of a coating film showing excellent corrosion resistances to halogen gases and plasma by regulating the content of Si base substance as impurities to specified one or below. SOLUTION: This coating film is composed of an Al oxide thin film. The content of Si base substance contained as impurities in the thin film layer is regulated to

9. 发明专利

JPH09117838A ELECTROSTATIC CHUCK MADE FROM AL2O3 失效
公开(公告)号：JPH09117838A
公开(公告)日：1997-05-06
申请号：JP28093395
申请日：1995-10-27
申请人： SHINKO KOBELCO TOOL KK
发明人： KUDO TAKAHIRO , KANAMARU MORIYOSHI , SUGIYAMA NARIMASA , IKEDA TSUGUMOTO , HISAMOTO ATSUSHI , ONISHI TAKASHI , NOZAWA TOSHIHISA
IPC分类号： B23Q3/15 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a stable attracting force and to prevent the generation of contamination caused by a metallic element even when a remaining attracting force is small and contact is made with a semiconductor wafer by making at least an insulated layer of a highly pure Al2 O3 sintered compact. SOLUTION: A voltage is applied between a substrate 1 and a semiconductor wafer 3 by conducting electricity through an electrode taking-out part 1b to an internal electrode 2 and the semiconductor wafer 3 is attracted to an attracting surface 1a. For the substrate 1, an Al2 O3 sintered compact having purity of 99.9% or higher is used. In order to bury the internal electrode 2, first the Al2 O3 sintered compact is prepared by providing a substrate fist member II molded in a sheet shape as an insulated layer, then the internal electrode 2 is placed and by placing a substrate second member 12 having the electrode taking-out part 1b thereon, these are subjected together to sintering.

10. 发明专利

JP2010209367A Aluminum alloy member having excellent low staining property 有权
标题翻译：具有优异的低污染性能的铝合金构件
公开(公告)号：JP2010209367A
公开(公告)日：2010-09-24
申请号：JP2009053390
申请日：2009-03-06
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： HOSOKAWA MAMORU , TSUBOTA TAKAYUKI , WADA KOJI , HISAMOTO ATSUSHI
IPC分类号： C25D11/04 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide an aluminum alloy member having low staining property and coping with low staining need recently growing regardless of a component composition of the aluminum alloy used for a base material even when an aluminum alloy having special component composition requiring time and labor in the manufacture is not adopted.
SOLUTION: The aluminum alloy member has an anodized film formed on the surface of a base material comprising the aluminum alloy. The anodized film has a porous layer in which barrier thickness between pores is ≤30 nm, in the depth of ≥1 μm from the surface side of the film. The barrier thickness between the pores is >30 nm and the barrier layer thickness is ≥5 μm in the region of the base material side except for the porous layer of the surface side.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使当具有特殊组分组成要求的铝合金，即使是具有特殊组成成分的铝合金，即使是用于基材的铝合金的组分组成，也可以提供一种低染色性的铝合金构件，制造时间和劳动力不被采用。解决方案：铝合金构件具有在包含铝合金的基材的表面上形成的阳极氧化膜。阳极氧化膜具有多孔层，其中孔之间的阻挡层厚度≤30nm，距膜的表面侧的深度≥1μm。除了表面侧的多孔层之外，在基材侧的区域中，孔之间的阻挡层厚度> 30nm，阻挡层厚度≥5μm。版权所有（C）2010，JPO＆INPIT

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