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1. 发明专利

JP2003100690A HIGH-PRESSURE TREATING DEVICE 审中-公开
公开(公告)号：JP2003100690A
公开(公告)日：2003-04-04
申请号：JP2001291176
申请日：2001-09-25
申请人： DAINIPPON SCREEN MFG , KOBE STEEL LTD
发明人： MURAOKA YUSUKE , KITAKADO RYUJI , SAITO KIMITSUGU , MIZOBATA IKUO , OSHIBA HISANORI , SAKASHITA YOSHIHIKO , WATANABE KATSUMITSU , YAMAGATA MASAHIRO
IPC分类号： B08B3/02 , B05C11/10 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a high-pressure treating device that performs appropriate treatment by accelerating the dissolution of an auxiliary agent in an SCF and removing auxiliary mist generated when the auxiliary agent is mixed in the SCF. SOLUTION: This high-pressure treating device is provided with an SCF supply section 1, auxiliary agent mixing section 2, auxiliary agent supply section 3, mist separator 4, mist detector 5, and SCF chamber 6. An auxiliary agent supply pipe 8 and an auxiliary agent return pipe 10 are respectively provided with valves 9 and 11. The auxiliary agent mixing section 2 created a two- component SCF from the SCF supplied from the SCF supply section 1 and the auxiliary agent supplied from the auxiliary agent supply section 3, and the mist separator 4 catches the auxiliary agent mist from the two-component SCF and supplies the SCF to the mist detector 5. The detector 5 detects the auxiliary agent mist of the two-component SCF and sends the SCF to the SCF chamber 6 while outputting its detected results to a control section 7.

2. 发明专利

JP2003031533A High-pressure processing apparatus 有权
标题翻译：高压加工设备
公开(公告)号：JP2003031533A
公开(公告)日：2003-01-31
申请号：JP2002113040
申请日：2002-04-16
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： YAMAGATA MASAHIRO , OSHIBA HISANORI , SAKASHITA YOSHIHIKO , INOUE YOICHI , MURAOKA YUSUKE , SAITO KIMITSUGU , MIZOBATA IKUO , KITAKADO RYUJI
IPC分类号： B08B3/04 , B08B3/08 , C23G3/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a compact high-pressure processing apparatus, where one portion can be installed in a clean room, and high-pressure processing can be conducted stably.
SOLUTION: A high-pressure processing apparatus for bringing an object to be treated, into contact with high-pressure fluid and chemical liquid other than the high-pressure fluid under pressurization, and removing an unwanted substances on the body to be treated has a plurality of high-pressure processing chambers 30 and 31, a common high-pressure fluid supply means 1 for supplying the high-pressure fluid to each high-pressure processing chamber, common chemical liquid supply means 2A and 2B for supplying chemical liquid to each high- pressure processing chamber, and a separation means 4 for separating a gas constituent from the mixture of the high-pressure fluid being discharged form the high-pressure processing chamber, after the cleaning processing of the body to be treated and the chemical liquid.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供一个紧凑的高压处理装置，其中一个部分可以安装在洁净室中，并且可以稳定地进行高压处理。解决方案：一种高压处理装置，用于使待处理对象与加压流体以外的高压流体和除了高压流体之外的化学液体接触，并且除去待处理的物体上的不需要的物质具有多个的高压处理室30,31的高压流体供给单元1，向每个高压处理室供给高压流体的通常的高压流体供给单元1，以及分离装置4，用于在被处理体和化学液体的清洁处理之后，从高压处理室排出的高压流体的混合物中分离气体成分。

3. 发明专利

JP2003051475A Processing method and processing facilities for wafer or the like 有权
标题翻译：处理方法和处理方法等等
公开(公告)号：JP2003051475A
公开(公告)日：2003-02-21
申请号：JP2001239084
申请日：2001-08-07
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： INOUE YOICHI , ISHII TAKAHIKO , WATANABE KATSUMITSU , SAKASHITA YOSHIHIKO , MIZOBATA IKUO , MIYAKE TAKASHI , KITAKADO RYUJI , MURAOKA YUSUKE , SAITO KIMITSUGU , IWATA TOMOMI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a processing system of wafers or the like, that has high versatility, stable and high productivity, and satisfying economic demands in a process, from wet treatment to supercritical drying when producing semiconductor wafers, liquid crystal substrates, or the like.
SOLUTION: The facilities comprises at least one wet treatment apparatus 1, that accommodates wafers or the like at the inside and carries out wet treatment, such as development, film formation, etching, and cleaning, at least one supercritical dryer 2 that accommodates wafers and the like, on the inside and carries out supercritical drying, and a conveyance apparatus 3 that conveys wafers and the like between the wet treatment apparatus 1 and supercritical dryer 2, while the surface is in a wet state. The supercritical dryer 2 has a mechanism for rotating the wafers and the like in the inside.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种具有高通用性，稳定性和高生产率的晶片等的处理系统，并且在制造半导体晶片时，从湿处理到超临界干燥，液晶基板或类似。解决方案：设备包括至少一个湿处理设备1，其在内部容纳晶片等，并进行湿处理，例如显影，成膜，蚀刻和清洁，至少一个容纳晶片的超临界干燥器2和并且执行超临界干燥，以及在表面处于湿润状态时在湿处理设备1和超临界干燥器2之间传送晶片等的输送设备3。超临界干燥机2具有使内部的晶片等旋转的机构。

4. 发明专利

JP2004288681A Device and method for high-pressure treatment 有权
公开(公告)号：JP2004288681A
公开(公告)日：2004-10-14
申请号：JP2003075556
申请日：2003-03-19
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： MURAOKA YUSUKE , IWATA TOMOMI , SAITO KIMITSUGU , YAMAGATA MASAHIRO , OSHIBA HISANORI , SARUMARU SHIYOUGO
IPC分类号： G03F7/42 , B08B3/08 , B08B7/00 , H01L21/027 , H01L21/304
CPC分类号： B08B7/0021
摘要： PROBLEM TO BE SOLVED: To provide a device and a method for high-pressure treatment by which prescribed surface treatment is performed on an object to be treated by bringing a treating fluid prepared by mixing all or part of a plurality of chemicals with a high-pressure fluid into contact with the surface of the object and, in addition, the constitution of the device can be simplified and the cost can be reduced.
SOLUTION: A mixing valve 42 is made to communicate with a tank 51D exclusively used for storing a compatible agent D through an inlet valve 43 and, at the same time, with tanks 51A-51C exclusively used for respectively storing auxiliaries A-C through three injection valves. A compounded chemical is prepared by selectively injecting part of the four kinds of chemicals into the mixing valve 42 by controlling the opening and closing of the inlet valve 43 and injection valves and mixing the injected chemicals with each other. Then the treatment fluid is prepared by force-feeding the compounded chemical to an SCF through a high-pressure pump 45 and mixing the chemical. Consequently, the cost of the device can be reduced by suppressing the number of components used in the high-pressure section of the device. In addition, the pipeline system used for force-feeding the chemical is simplified.
COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2002353185A HIGH-PRESSURE PROCESSOR 失效
公开(公告)号：JP2002353185A
公开(公告)日：2002-12-06
申请号：JP2001160930
申请日：2001-05-29
申请人： DAINIPPON SCREEN MFG , KOBE STEEL LTD
发明人： MIZOBATA IKUO , MURAOKA YUSUKE , SAITO KIMITSUGU , KITAKADO RYUJI , INOUE YOICHI , OSHIBA HISANORI , SAKASHITA YOSHIHIKO , YAMAGATA MASAHIRO
IPC分类号： G01N21/27 , B08B3/08 , C11D7/04 , C11D17/08 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a high-pressure processor stabilizing substrate processing by recognizing the liquid chemical density in high-pressure processing fluid in circulation processing, accurately recognizing the time of the completion of the substrate processing and optimally controlling the liquid chemical density. SOLUTION: A density controller 12 controls valve opening and closing and makes an auxiliary agent supplied to a mixer 10, so as to turn density in supercritical carbon dioxide to a prescribed value. The mixer 10 mixes the agent and the supercritical carbon dioxide and sends out the supercritical carbon dioxide, in which the agent is mixed for prescribed density through a density detector 11 to a substrate washing tank 5. When substrate cleaning, for which the supercritical carbon dioxide mixed with the agent is circulated is performed, the density detector 11 detects the agent density in the supercritical carbon dioxide and the density controller 12 controls the valve opening and closing, so as to keep the agent density at the prescribed value at all times according to the detected density. In the case that the detected agent density is stabilized, the density controller 12 determines the substrate-cleaning completion and stops the supply of the agent.

6. 发明专利

JP2002336675A APPARATUS AND METHOD FOR TREATING UNDER HIGH PRESSURE 失效
公开(公告)号：JP2002336675A
公开(公告)日：2002-11-26
申请号：JP2001148194
申请日：2001-05-17
申请人： DAINIPPON SCREEN MFG , KOBE STEEL LTD
发明人： MIZOBATA IKUO , MURAOKA YUSUKE , SAITO KIMITSUGU , KITAKADO RYUJI , INOUE YOICHI , SAKASHITA YOSHIHIKO , WATANABE KATSUMITSU , YAMAGATA MASAHIRO
IPC分类号： G02F1/13 , B01J3/00 , B01J3/02 , B08B5/00 , B08B7/00 , G02F1/1333 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for treating a substrate under high pressure, in which the substrate can be treated by using a pure processing fluid so that the atmospheric component intruded into a treating tank when the substrate is placed is not made to flow in a fluid producing/recovering system. SOLUTION: Valves V1, V2, V3, V4 and V6 are closed and only a valve V5 is opened when the door of a substrate cleaning tank 5 is opened for placing the substrate so that gaseous carbon dioxide is supplied to the tank 5 and the tank 5 is purged for preventing the atmospheric component from intruding into the tank 5. Next, the door of the tank 5 is closed and the valve V6 is opened at the same time to form a venting line of the tank 5 so that the gas existing in the tank 5 and its surrounding pipes is pushed out to the atmosphere by the supplied gaseous carbon dioxide and the tank 5 is purged so that the atmospheric component to intrude into the tank 5 and its surrounding pipes by some rare accident does not stay behind. Then, the substrate is cleaned by using supercritical carbon dioxide.

7. 发明专利

JP2002334860A HIGH-PRESSURE TREATING APPARATUS 失效
公开(公告)号：JP2002334860A
公开(公告)日：2002-11-22
申请号：JP2001136512
申请日：2001-05-07
申请人： DAINIPPON SCREEN MFG , KOBE STEEL LTD
发明人： MIZOBATA IKUO , MURAOKA YUSUKE , SAITO KIMITSUGU , KITAKADO RYUJI , INOUE YOICHI , OSHIBA HISANORI , WATANABE KATSUMITSU , YAMAGATA MASAHIRO
IPC分类号： G02F1/13 , B08B3/08 , G02F1/1333 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a high pressure treating apparatus, capable of effectively improving the treating performance and shortening the treating time, by carrying out substrate treatment using a treating fluid in a low-pressure state, in addition to substrate treatment using the treating fluid in a high-pressure state. SOLUTION: After valves V1, V3 are opened and a valve V2 is closed, substrate cleaning by supercritical carbon dioxide in a high-pressure state is carried out in a substrate-cleaning tank 5. After the substrate cleaning by the supercritical carbon dioxide is carried out for a predetermined interval, the valves V1, V3 are closed and the valve V2 is opened. As a result, supercritical carbon dioxide in the high pressure state in the substrate cleaning tank 5 flows into a buffer tank 6, and the pressure in the tank 5 is lowered inaccording to the capacity of the tank 6. Thus, in the substrate-cleaning tank 5, substrate- cleaning is conducted by the expanded supercritical carbon dioxide in low- pressure state. This supercritical carbon dioxide in the low-pressure state is sent out to a decompressor 7, after being pressurized to a predetermined pressure by a compressor 9.

8. 发明专利

JP2002324774A METHOD AND APPARATUS FOR HIGH-PRESSURE PROCESSING 失效
公开(公告)号：JP2002324774A
公开(公告)日：2002-11-08
申请号：JP2001128275
申请日：2001-04-25
申请人： KOBE STEEL LTD , DAINIPPON SCREEN MFG
发明人： SAKASHITA YOSHIHIKO , WATANABE KATSUMITSU , OSHIBA HISANORI , YAMAGATA MASAHIRO , MURAOKA YUSUKE , SAITO KIMITSUGU , MIZOBATA IKUO , KITAKADO RYUJI
IPC分类号： B08B5/02 , F26B21/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a processing method and a processor which eliminate the need for a seal member that becomes a source of dust and also eliminates the need to install a rotary driving source such as a motor for rotating a body to be processed, such as a semiconductor substrate in the processing chamber of a pressure container when the body to be processed is processed in the processing chamber by using high-pressure liquid. SOLUTION: In the processing chamber 2 of the processing container 1, the body 5 to be processed is floated by liquid and also rotated on the container axis by the liquid.

9. 发明专利

JP2005033135A Cleaning device for microstructure 审中-公开
标题翻译：用于微结构的清洁装置
公开(公告)号：JP2005033135A
公开(公告)日：2005-02-03
申请号：JP2003273587
申请日：2003-07-11
申请人： Dainippon Screen Mfg Co Ltd , Kobe Steel Ltd , 大日本スクリーン製造株式会社 , 株式会社神戸製鋼所
发明人： YAMAGATA MASAHIRO , INOUE YOICHI , OSHIBA HISANORI , MURAOKA YUSUKE , IWATA TOMOMI , SAITO KIMITSUGU
IPC分类号： B08B3/08 , B08B7/00 , H01L21/00 , H01L21/027 , H01L21/304
CPC分类号： H01L21/67051 , B08B7/0021
摘要： PROBLEM TO BE SOLVED: To provide a cleaning device for a microstructure whereby a contamination caused by a toxic substance leaking from the cleaning device can be minimized and a human body is hardly affected in the cleaning device for removing an unwanted substance adhering to the microstructure by fluidizing, under high pressure, a cleaning agent composition essentially containing carbon dioxide and a cleaning component and bringing the composition into contact with the microstructure.
SOLUTION: The cleaning device removes an unwanted substance adhering to the microstructure by fluidizing, under high pressure, the cleaning agent composition essentially containing carbon dioxide and the cleaning component and bringing the composition into contact with the microstructure. In a cleaning process performed by the cleaning device, the toxic substance is present anywhere on the cleaning device. Of the cleaning device, a part where the toxic substance is likely to leak is housed in an enclosed structure comprising a first evacuating means.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于微结构的清洁装置，由此能够使从清洁装置泄漏的有毒物质引起的污染最小化，并且在清洁装置中几乎不影响人体，以除去附着于通过在高压下流化基本上含有二氧化碳和清洁组分并使组合物与微结构接触的清洁剂组合物的微结构。解决方案：清洁装置通过在高压下流化基本上包含二氧化碳和清洁组分并使组合物与微结构接触的清洁剂组合物来除去附着在微结构上的不需要的物质。在由清洁装置执行的清洁过程中，有毒物质存在于清洁装置上的任何地方。在清洁装置中，有毒物质可能泄漏的部分容纳在包括第一排气装置的封闭结构中。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2003092326A SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：JP2003092326A
公开(公告)日：2003-03-28
申请号：JP2001282266
申请日：2001-09-17
申请人： DAINIPPON SCREEN MFG , KOBE STEEL LTD
发明人： MURAOKA YUSUKE , KITAKADO RYUJI , SAITO KIMITSUGU , MIZOBATA IKUO , OSHIBA HISANORI , SAKASHITA YOSHIHIKO , WATANABE KATSUMITSU , YAMAGATA MASAHIRO
IPC分类号： G02F1/13 , G02F1/1333 , H01L21/304 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus reduced in space, in which a carrying time is shortened between wet processing and SCF (Super Critical Fluid) processing. SOLUTION: In a cleaning/drying processing section 7, a wafer W is carried by ascending movement of an elevator 30. A wet processing chamber 10 is provided with a chamber 11, a movable cover 12, a motor section 13, a wafer holding section 14, a teflon bellows 15 and cover 16. An SCF processing chamber 20 is provided with a chamber 21, a cover lock 22 and an O-ring 23. First, prescribed wet processing is applied to the wafer W in the chamber 10. After completion of the wet processing, the cover 12 is jointed to the chamber 21 through the O-ring 23 by ascending movement of the elevator 30, and the cover 12 stops at an SCF processing position. Then, prescribed SCF processing is applied to the wafer W in the chamber 20.

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