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1. 发明申请

WO2012173999A2 WAFER LEVEL SPECTROMETER 审中-公开
公开(公告)号：WO2012173999A2
公开(公告)日：2012-12-20
申请号：PCT/US2012/042065
申请日：2012-06-12
申请人： KLA-TENCOR CORPORATION , JENSEN, Earl , SUN, Mei , O'BRIEN, Kevin
发明人： JENSEN, Earl , SUN, Mei , O'BRIEN, Kevin
IPC分类号： G01J3/02
CPC分类号： G01J3/0259 , G01J1/58 , G01J3/0205 , G01J3/021 , G01J3/0256 , G01J3/0262 , G01J3/36 , G01J2003/1213
摘要： A sensor apparatus for measuring characteristics of optical radiation has a substrate and a low profile spectrally selective detection system located within the substrate at one or more spatially separated locations. The spectrally selective detection system includes a generally laminar array of wavelength selectors optically coupled to a corresponding array of optical detectors. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：用于测量光辐射特性的传感器装置具有位于一个或多个空间分离位置的衬底内的衬底和低剖面光谱选择性检测系统。光谱选择性检测系统包括光学耦合到相应阵列的光学检测器的波长选择器的大体层流阵列。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

2. 发明申请

WO2011090850A3 PROCESS CONDITION SENSING DEVICE FOR PLASMA CHAMBER 审中-公开
公开(公告)号：WO2011090850A3
公开(公告)日：2011-07-28
申请号：PCT/US2011/020872
申请日：2011-01-11
申请人： KLA-TENCOR CORPORATION , JENSEN, Earl , SUN, Mei
发明人： JENSEN, Earl , SUN, Mei
IPC分类号： H05H1/46 , G01N27/60 , H01L21/205
摘要： A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

3. 发明申请

WO2012106147A2 PROCESS CONDITION MEASURING DEVICE (PCMD) AND METHOD FOR MEASURING PROCESS CONDITIONS IN A WORKPI ECE PROCESSING TOOL CONFIGURED TO PROCESS PRODUCTION WORKPIECES 审中-公开
标题翻译：工艺条件测量设备（PCMD）以及用于测量配置成处理生产工件的工作设备工艺工具中的工艺条件的方法
公开(公告)号：WO2012106147A2
公开(公告)日：2012-08-09
申请号：PCT/US2012/022352
申请日：2012-01-24
申请人： KLA-TENCOR CORPORATION , SUN, Mei , QULI, Farhat , JENSEN, Earl , ARLEO, Paul , VISHAL, Vaibhaw
发明人： SUN, Mei , QULI, Farhat , JENSEN, Earl , ARLEO, Paul , VISHAL, Vaibhaw
IPC分类号： H01L21/02 , G01K7/16
CPC分类号： G01K17/00 , H01L21/67248
摘要： A process condition measuring device (PCMD) may include first and second substrate components. One or more temperature sensors are embedded within each substrate component. The first and second substrate components are sandwiched together such that each temperature sensor in the second substrate component is aligned in tandem with a corresponding temperature sensor located in the first substrate component. Alternatively first and second temperature sensors may be positioned in parallel in the same substrate. Temperature differences may be measured between pairs of corresponding temperature sensors when the PCMD is subjected to process conditions in a workpiece processing tool. Process conditions in the tool may be calculated from the temperature differences.
摘要翻译：工艺条件测量装置（PCMD）可以包括第一和第二基底部件。一个或多个温度传感器嵌入每个基板组件内。第一和第二衬底组件被夹在一起，使得第二衬底组件中的每个温度传感器与位于第一衬底组件中的相应温度传感器串联排列。或者，第一和第二温度传感器可以平行地放置在相同的衬底中。当PCMD受到工件加工工具中的工艺条件时，可以在成对的相应温度传感器之间测量温度差异。工具中的工艺条件可以通过温差来计算。

4. 发明申请

WO2011038036A2 NON-CONTACT INTERFACE SYSTEM 审中-公开
标题翻译：非接触界面系统
公开(公告)号：WO2011038036A2
公开(公告)日：2011-03-31
申请号：PCT/US2010/049877
申请日：2010-09-22
申请人： KLA-TENCOR CORPORATION , JENSEN, Earl , MASON, Aron
发明人： JENSEN, Earl , MASON, Aron
IPC分类号： H01L21/66
CPC分类号： H01L21/67253 , H02J5/005 , H02J7/025 , H02J50/10 , H04B5/0043
摘要： An interface system for a sensor wafer may comprise a sensor wafer having a substrate. One or more sensors may be mounted to the substrate. An electronics module may be mounted to the substrate and coupled to the one or more sensors. An energy storage device may be mounted to the substrate and coupled to the electronics module. A secondary coil may be attached to a surface of the sensor wafer, and coupled to the electronics module of the sensor wafer, having a diameter of at least 50 millimeters. A primary coil may be attached to a front opening universal pod (FOUP). The primary coil, may situated and oriented in the FOUP such that the primary coil is concentric with the secondary coil and at least 8, but less than 12 millimeters from the sensor wafer when the sensor wafer is stored in a slot in the FOUP.
摘要翻译：用于传感器晶片的接口系统可以包括具有衬底的传感器晶片。一个或多个传感器可以安装到基板上。电子模块可以安装到基板并且耦合到一个或多个传感器。能量存储装置可以被安装到基板并且被耦合到电子模块。次级线圈可以附接到传感器晶片的表面并且耦合到传感器晶片的电子模块，其具有至少50毫米的直径。初级线圈可以连接到前开口通用吊舱（FOUP）。初级线圈可以位于并定向在FOUP中，使得初级线圈与次级线圈同心，并且当传感器晶片存储在FOUP中的槽中时距传感器晶片至少8毫米但小于12毫米。 / p>

5. 发明申请

WO2014107665A1 HIGH TEMPERATURE SENSOR WAFER FOR IN-SITU MEASUREMENTS IN ACTIVE PLASMA 审中-公开
标题翻译：高温传感器用于现场等离子体测量
公开(公告)号：WO2014107665A1
公开(公告)日：2014-07-10
申请号：PCT/US2014/010349
申请日：2014-01-06
申请人： KLA-TENCOR CORPORATION
发明人： SUN, Mei , JENSEN, Earl , QULI, Farhat , SHARRATT, Stephen
IPC分类号： H01L21/02
CPC分类号： G01K1/14 , G01K1/12 , G01K2215/00
摘要： Aspects of the present disclosure disclose a component module in a process condition measuring device comprises a support for supporting a component, one or more legs configured to suspend the support in a spaced-apart relationship with respect to a substrate. An electrically conductive or low-resistivity semiconductor enclosure is configured to enclose the component, the support and the legs between the substrate and the enclosure. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：本公开的方面公开了一种处理状态测量装置中的部件模块，包括用于支撑部件的支撑件，一个或多个腿部，其被配置为以相对于基板间隔开的关系悬挂支撑件。导电或低电阻率半导体外壳被配置为将部件，支撑件和支脚封闭在基板和外壳之间。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

6. 发明申请

WO2015095228A1 POSITION SENSITIVE SUBSTRATE DEVICE 审中-公开
标题翻译：位置敏感基板设备
公开(公告)号：WO2015095228A1
公开(公告)日：2015-06-25
申请号：PCT/US2014/070662
申请日：2014-12-16
申请人： KLA-TENCOR CORPORATION
发明人： JENSEN, Earl , O'BRIEN, Kevin
IPC分类号： H01L21/66 , H01L21/68
CPC分类号： H01L21/68 , H01L21/681
摘要： Some aspects of the present disclosure relate to a system having a substrate device, a substrate support surface, and a substrate handler that positions the substrate device on the substrate support surface. The substrate device and the substrate support surface may have counterpart coarse position units and fine position units. The system may measure coarse positional offsets between the first and second coarse position units, re-position the substrate device on the substrate support surface based on the coarse positional offsets, and subsequently measure fine positional offsets between the first and second fine position units. In some implementations, the substrate device is integrally coupled to the substrate handler via a wireless communication link in order to communicate position information as feedback for further placement.
摘要翻译：本公开的一些方面涉及具有衬底装置，衬底支撑表面和将衬底装置定位在衬底支撑表面上的衬底处理器的系统。衬底装置和衬底支撑表面可以具有对应的粗略位置单元和精细位置单元。该系统可以测量第一和第二粗略位置单元之间的粗略的位置偏移，基于粗略的位置偏移将衬底装置重新定位在衬底支撑表面上，并随后测量第一和第二精细位置单元之间的精细位置偏移。在一些实施方案中，衬底装置经由无线通信链路整体耦合到衬底处理器，以便将位置信息作为反馈传达以进一步放置。

7. 发明申请

WO2014138427A1 THICKNESS CHANGE MONITOR WAFER FOR IN SITU FILM THICKNESS MONITORING 审中-公开
标题翻译：厚度变化监测器用于薄膜厚度监测
公开(公告)号：WO2014138427A1
公开(公告)日：2014-09-12
申请号：PCT/US2014/021289
申请日：2014-03-06
申请人： KLA-TENCOR CORPORATION
发明人： JENSEN, Earl , O'BRIEN, Kevin
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01J37/32935 , G01B11/0625 , G01B11/0675 , G01B11/0683 , H01J37/32972
摘要： An etch rate monitor apparatus has a substrate, an optical element and one or more optical detectors mounted to a common substrate with the one or more detectors sandwiched between the substrate and optical element to detect changes in optical interference signal resulting from changes in optical thickness of the optical element. The optical element is made of a material that allows transmission of light of a wavelength of interest. A reference waveform and data waveform can be collected with the apparatus and cross-correlated to determine a thickness change. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：蚀刻速率监测装置具有衬底，光学元件和安装到公共衬底的一个或多个光学检测器，其中一个或多个检测器夹在衬底和光学元件之间，以检测由光学厚度的变化引起的光学干涉信号的变化光学元件。光学元件由允许感兴趣的波长的光的透射的材料制成。可以使用设备收集参考波形和数据波形，并进行交叉相关，以确定厚度变化。提供该摘要以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

8. 发明申请

WO2019236507A1 IN-SITU TEMPERATURE SENSING SUBSTRATE, SYSTEM, AND METHOD 审中-公开
公开(公告)号：WO2019236507A1
公开(公告)日：2019-12-12
申请号：PCT/US2019/035273
申请日：2019-06-04
申请人： KLA-TENCOR CORPORATION
发明人： JENSEN, Earl
IPC分类号： H01L21/67 , H01L21/66
摘要： A sensor for detecting a temperature distribution imparted on a substrate in an environment is disclosed. The sensor includes a sensor substrate with one or more temperature sensing elements formed on the sensor substrate. In embodiments, a temperature sensing element includes at least one cavity with a thermally expandable material disposed within the cavity and a channel extending from the cavity with a slug disposed within the channel. In embodiments, the cavity has a fixed volume and is enclosed by a cover layer disposed or formed over the cavity. The thermally expandable material is configured to extend from the cavity into the channel to actuate the slug from a first position within the channel to at least a second position within the channel, where the position of the slug is indicative of a temperature of a respective portion of the sensor substrate.

9. 发明申请

WO2017218701A1 ENCAPSULATED INSTRUMENTED SUBSTRATE APPARATUS FOR ACQUIRING MEASUREMENT PARAMETERS IN HIGH TEMPERATURE PROCESS APPLICATIONS 审中-公开
标题翻译：在高温工艺应用中用于获取测量参数的封装仪器化基底装置
公开(公告)号：WO2017218701A1
公开(公告)日：2017-12-21
申请号：PCT/US2017/037548
申请日：2017-06-14
申请人： KLA-TENCOR CORPORATION
发明人： SUN, Mei , JENSEN, Earl , ZHOU, Jing , LIU, Ran
IPC分类号： H01L21/66 , H01L21/67
摘要： An apparatus includes an instrumented substrate apparatus, a substrate assembly including a bottom and top substrate mechanically coupled, an electronic assembly, a nested enclosure assembly including an outer and inner enclosure wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses the electronic assembly. An insulating medium between the inner and outer enclosure and a sensor assembly communicatively coupled to the electronic assembly including one or more sensors disposed at one or more locations within the substrate assembly wherein the electronic assembly is configured to receive one or more measurement parameters from the one or more sensors.
摘要翻译：装置包括仪器化衬底装置，包括机械耦合的底部和顶部衬底的衬底组件，电子组件，包括外部和内部封装的嵌套封装组件，其中外部封装围绕内部封装内壳包围电子组件。内壳和外壳之间的绝缘介质以及通信地耦合到电子组件的传感器组件，该传感器组件包括设置在基板组件内的一个或多个位置处的一个或多个传感器，其中电子组件被配置为从一个或多个位置接收一个或多个测量参数或更多传感器。

10. 发明申请

WO2016061089A1 METHOD AND SYSTEM FOR MEASURING RADIATION AND TEMPERATURE EXPOSURE OF WAFERS ALONG A FABRICATION PROCESS LINE 审中-公开
标题翻译：用于测量制造工艺线上的辐射和温度暴露的方法和系统
公开(公告)号：WO2016061089A1
公开(公告)日：2016-04-21
申请号：PCT/US2015/055307
申请日：2015-10-13
申请人： KLA-TENCOR CORPORATION
发明人： SUN, Mei , JENSEN, Earl , O'BRIEN, Kevin
IPC分类号： H01L21/66
CPC分类号： G01J1/429 , G01J1/0204 , G01J1/0271 , G01J1/0407 , G01J1/58 , G01J5/04 , G01J5/0818 , G01J5/10 , G01K11/20 , H01L21/67248 , H01L21/67253 , H01L22/10
摘要： A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.
摘要翻译：用于测量辐射强度和温度的测量晶片装置包括包括一个或多个空腔的晶片组件。测量晶片装置还包括检测器组件。检测器组件设置在晶片组件的一个或多个空腔内。检测器组件包括一个或多个光传感器。检测器组件还被配置为对入射在晶片组件的表面上的紫外线的强度进行直接或间接的测量。检测器组件还被配置为基于一个或多个光传感器的一个或多个特性来确定晶片组件的一个或多个部分的温度。

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