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1. 发明申请

WO2012096855A2 METHODS AND SYSTEMS OF OBJECT BASED METROLOGY FOR ADVANCED WAFER SURFACE NANOTOPOGRAPHY 审中-公开
标题翻译：基于目标的方法和系统用于高级波形表面纳米尺度的方法和系统
公开(公告)号：WO2012096855A2
公开(公告)日：2012-07-19
申请号：PCT/US2012/020573
申请日：2012-01-08
申请人： KLA-TENCOR CORPORATION , CHEN, Haiguang , SINHA, Jaydeep, K. , KAMENSKY, Sergey
发明人： CHEN, Haiguang , SINHA, Jaydeep, K. , KAMENSKY, Sergey
IPC分类号： H01L21/66 , H01L21/00
CPC分类号： H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a system and method for enhanced and expanded localized geometry characterization. Objects of interest are classified according to user-defined parameters, and this enables enhanced contrast and more accurate feature detection, as well as more accurately defined feature object regions.
摘要翻译：本文公开了用于增强和扩展的局部几何表征的系统和方法。感兴趣的对象根据用户定义的参数分类，这使得能够增强对比度和更精确的特征检测以及更准确地定义的特征对象区域。

2. 发明申请

WO2011109545A2 SYSTEMS AND METHODS FOR WAFER EDGE FEATURE DETECTION AND QUANTIFICATION 审中-公开
标题翻译：用于波形边缘特征检测和量化的系统和方法
公开(公告)号：WO2011109545A2
公开(公告)日：2011-09-09
申请号：PCT/US2011/026900
申请日：2011-03-02
申请人： KLA-TENCOR CORPORATION , CHEN, Haiguang , SINHA, Jaydeep K.
发明人： CHEN, Haiguang , SINHA, Jaydeep K.
CPC分类号： G01B11/24 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a method to enhance detection and quantification of features in the wafer edge/wafer roll off regions. Modifications and improvements have been made to earlier methods which enable improved accuracy and increased scope of feature detection.
摘要翻译：本文公开了一种用于增强晶片边缘/晶片滚降区域中的特征的检测和量化的方法。已经对先前的方法进行了改进和改进，这些方法能够提高精度并增加特征检测的范围。

3. 发明申请

WO2012094421A2 METHODS AND SYSTEMS FOR IMPROVED LOCALIZED FEATURE QUANTIFICATION IN SURFACE METROLOGY TOOLS 审中-公开
标题翻译：用于改进表面计量工具中的本地化特征量化的方法和系统
公开(公告)号：WO2012094421A2
公开(公告)日：2012-07-12
申请号：PCT/US2012/020225
申请日：2012-01-04
申请人： KLA-TENCOR CORPORATION , CHEN, Haiguang , SINHA, Jaydeep , TANG, Shuohong , HAGER, John , ZENG, Andrew , KAMENSKY, Sergey
发明人： CHEN, Haiguang , SINHA, Jaydeep , TANG, Shuohong , HAGER, John , ZENG, Andrew , KAMENSKY, Sergey
IPC分类号： H01L21/66
CPC分类号： G06T5/002 , G06T5/20 , G06T7/0004 , G06T2207/30148
摘要： A method for enabling more accurate measurements of localized features on wafers is disclosed. The method includes: a) performing high order surface fitting to more effectively remove the low frequency shape components and also to reduce possible signal attenuations commonly observed from filtering; b) constructing and applying a proper two dimensional LFM window to the residual image from the surface fitting processing stage to effectively reduce the residual artifacts at the region boundaries; c) calculating the metrics of the region using the artifact-reduced image to obtain more accurate and reliable measurements; and d) using site-based metrics obtained from front and back surface data to quantify the features of interest. A method for filtering data from measurements of localized features on wafers is disclosed. This method includes an algorithm designed to adjust the filtering behavior according to the statistics of extreme data samples. A method for utilizing the 2D window and the data filtering to yield a more robust and more accurate Localized Feature quantification methodology is disclosed.
摘要翻译：公开了一种能够更精确地测量晶片上局部特征的方法。该方法包括：a）执行高阶表面拟合以更有效地去除低频形状分量，并且还可以减少通常从滤波观察到的可能的信号衰减; b）从表面拟合处理阶段构造和应用适当的二维LFM窗口到残余图像，以有效地减少区域边界处的残余伪像; c）使用伪影图像计算该区域的度量以获得更准确和可靠的测量; 以及d）使用从前面和背面数据获得的基于站点的度量来量化感兴趣的特征。公开了一种用于从晶片上的局部特征的测量中滤出数据的方法。该方法包括根据极端数据样本统计来调整过滤行为的算法。公开了一种利用2D窗口和数据过滤产生更强大和更准确的局部特征量化方法的方法。

4. 发明申请

WO2009155502A3 COMPUTER-IMPLEMENTED METHODS, COMPUTER-READABLE MEDIA, AND SYSTEMS FOR DETERMINING ONE OR MORE CHARACTERISTICS OF A WAFER 审中-公开
公开(公告)号：WO2009155502A3
公开(公告)日：2009-12-23
申请号：PCT/US2009/047932
申请日：2009-06-19
申请人： KLA-TENCOR CORPORATION , CHEN, Haiguang , KAVALDJIEV, Daniel , VINTRO, Louis , KREN, George
发明人： CHEN, Haiguang , KAVALDJIEV, Daniel , VINTRO, Louis , KREN, George
IPC分类号： H01L21/66 , G06F19/00
摘要： Computer-implemented methods, computer-readable media, and systems for determining one or more characteristics of a wafer are provided.

5. 发明申请

WO2017019338A1 HYBRID PHASE UNWRAPPING SYSTEMS AND METHODS FOR PATTERNED WAFER MEASUREMENT 审中-公开
标题翻译：混合相位不平移系统和图形波形测量方法
公开(公告)号：WO2017019338A1
公开(公告)日：2017-02-02
申请号：PCT/US2016/042592
申请日：2016-07-15
申请人： KLA-TENCOR CORPORATION
发明人： CHEN, Haiguang , SINHA, Jaydeep K.
IPC分类号： G03F1/00 , G03F1/44
CPC分类号： G01N21/9501 , G01B11/06 , G01B11/2441 , G01N21/8851 , G01N2201/06113 , G01N2201/12 , G06T7/0004 , G06T2207/10056 , G06T2207/30148
摘要： Systems and methods for unwrapping phase signals obtained from interferometry measurements of patterned wafer surfaces are disclosed. A phase unwrapping method in accordance with the present disclosure may calculate a front surface phase map and a back surface phase map of a wafer, subtract the back surface phase map from the front surface phase map to obtain a phase difference map, unwrap the phase difference map to obtain a wafer thickness variation map, unwrap the back surface phase map to obtain a back surface map representing the back surface of the wafer; and add the wafer thickness variation map to the back surface phase map to calculate a front surface map representing the front surface of the wafer.
摘要翻译：公开了用于展开由图案化晶片表面的干涉测量获得的相位信号的系统和方法。根据本公开的相位展开方法可以计算晶片的前表面相位图和背面相位图，从前表面相位图中减去背面相位图以获得相位差图，展开相位差映射以获得晶片厚度变化图，展开背面相位图以获得表示晶片背面的背面图; 并将晶片厚度变化图添加到背面相位图以计算表示晶片前表面的前表面图。

6. 发明申请

WO2015066232A1 PROCESS-INDUCED DISTORTION PREDICTION AND FEEDFORWARD AND FEEDBACK CORRECTION OF OVERLAY ERRORS 审中-公开
标题翻译：过程诱导失败预测和反馈纠正和反馈纠正重叠错误
公开(公告)号：WO2015066232A1
公开(公告)日：2015-05-07
申请号：PCT/US2014/062992
申请日：2014-10-29
申请人： KLA-TENCOR CORPORATION
发明人： VUKKADALA, Pradeep , CHEN, Haiguang , SINHA, Jaydeep , VEERARAGHAVAN, Sathish
IPC分类号： H01L21/66
CPC分类号： G01N19/08 , C23C14/54 , G01L1/00 , G01L5/0047 , G03F7/705 , G03F7/70633 , G03F7/70783 , H01L22/12 , H01L22/20
摘要： Systems and methods for prediction and measurement of overlay errors are disclosed. Process-induced overlay errors may be predicted or measured utilizing film force based computational mechanics models. More specifically, information with respect to the distribution of film force is provided to a finite element (FE) model to provide more accurate point-by-point predictions in cases where complex stress patterns are present. Enhanced prediction and measurement of wafer geometry induced overlay errors are also disclosed.
摘要翻译：公开了用于预测和测量重叠误差的系统和方法。可以使用基于薄膜力的计算力学模型来预测或测量过程引起的重叠误差。更具体地，关于膜力的分布的信息被提供给有限元（FE）模型，以在存在复应力模式的情况下提供更准确的逐点预测。还公开了晶片几何感应重叠误差的增强预测和测量。

7. 发明申请

WO2003003422A2 IN-SITU END POINT DETECTION FOR SEMICONDUCTOR WAFER POLISHING 审中-公开
标题翻译：用于半导体波形抛光的现场端点检测
公开(公告)号：WO2003003422A2
公开(公告)日：2003-01-09
申请号：PCT/US2002/020765
申请日：2002-06-27
申请人： KLA-TENCOR CORPORATION
发明人： CHEN, Haiguang , LEE, Shing
IPC分类号： H01L21/00
CPC分类号： B24B37/013 , B24B49/12
摘要： The present invention relates to in-situ techniques for determining process end points in semiconductor wafer polishing processes. Generally, the technique involves utilizing a scanning inspection machine having multiple pair of lasers and sensors located at different angles for detecting signals caused to emanate from an inspected specimen. The detection techniques determine the end points by differentiating between various material properties within a wafer. An accompanying algorithm is used to obtain an end point detection curve that represents a composite representation of the signals obtained from each of the detectors of the inspection machine. This end point detection curve is then used to determine the process end point. Note that computation of the algorithm is performed during the polishing process so that the process end point can be determined without interruptions that diminish process throughputs.
摘要翻译：本发明涉及用于确定半导体晶片抛光工艺中的工艺终点的现场技术。通常，该技术涉及利用具有多对激光器和位于不同角度的传感器的扫描检查机，以检测从检查样品发出的信号。检测技术通过区分晶片内的各种材料特性来确定端点。使用伴随的算法来获得终点检测曲线（608），其表示从检查机的每个检测器获得的信号的复合表示。然后，该终点检测曲线（608）用于确定过程终点（614）。注意，在抛光过程期间执行算法（610,612）的计算，使得可以确定处理结束点而不会导致处理吞吐量减少的中断。

8. 发明申请

WO2014059250A1 SYSTEM AND METHOD TO EMULATE FINITE ELEMENT MODEL BASED PREDICTION OF IN-PLANE DISTORTIONS DUE TO SEMICONDUCTOR WAFER CHUCKING 审中-公开
标题翻译：用于模拟基于半导体滤波器的有限元模型的面内失真预测的系统和方法
公开(公告)号：WO2014059250A1
公开(公告)日：2014-04-17
申请号：PCT/US2013/064505
申请日：2013-10-11
申请人： KLA-TENCOR CORPORATION
发明人： VUKKADALA, Pradeep , VEERARAGHAVAN, Sathish , SINHA, Jaydeep K. , CHEN, Haiguang , KIRK, Michael
IPC分类号： G06F19/00 , G06F9/455
CPC分类号： G06F17/5018 , H01L21/67288
摘要： Systems and methods for prediction of in-plane distortions (IPD) due to wafer shape in semiconductor wafer chucking process is disclosed. A process to emulate the non-linear finite element (FE) contact mechanics model based IPD prediction is utilized in accordance with one embodiment of the present disclosure. The emulated FE model based prediction process is substantially more efficient and provides accuracy comparable to the FE model based IPD prediction that utilizes full-scale 3-D wafer and chuck geometry information and requires computation intensive simulations. Furthermore, an enhanced HOS IPD/OPD prediction process based on a series of Zernike basis wafer shape images is also disclosed.
摘要翻译：公开了用于预测半导体晶片夹持工艺中的晶片形状的面内失真（IPD）的系统和方法。根据本公开的一个实施例，利用仿真基于IPD预测的非线性有限元（FE）接触力学模型的过程。基于模拟的基于有限元模型的预测过程基本上更有效，并且提供了与使用全尺寸3-D晶片和卡盘几何信息的基于有限元模型的基于有限元模型的预测相当的精度，并且需要计算密集模拟。此外，还公开了基于一系列Zernike基晶片形状图像的增强型HOS IPD / OPD预测处理。

9. 发明公开

EP2661769A2 METHODS AND SYSTEMS FOR IMPROVED LOCALIZED FEATURE QUANTIFICATION IN SURFACE METROLOGY TOOLS 审中-公开
标题翻译：方法和系统改进的属地化特征量化与表面测量工具
公开(公告)号：EP2661769A2
公开(公告)日：2013-11-13
申请号：EP12732237.8
申请日：2012-01-04
申请人： KLA-Tencor Corporation
发明人： CHEN, Haiguang , SINHA, Jaydeep , TANG, Shuohong , HAGER, John , ZENG, Andrew , KAMENSKY, Sergey
IPC分类号： H01L21/66
CPC分类号： G06T5/002 , G06T5/20 , G06T7/0004 , G06T2207/30148
摘要： A method for enabling more accurate measurements of localized features on wafers is disclosed. The method includes: a) performing high order surface fitting to more effectively remove the low frequency shape components and also to reduce possible signal attenuations commonly observed from filtering; b) constructing and applying a proper two dimensional LFM window to the residual image from the surface fitting processing stage to effectively reduce the residual artifacts at the region boundaries; c) calculating the metrics of the region using the artifact-reduced image to obtain more accurate and reliable measurements; and d) using site-based metrics obtained from front and back surface data to quantify the features of interest. A method for filtering data from measurements of localized features on wafers is disclosed. This method includes an algorithm designed to adjust the filtering behavior according to the statistics of extreme data samples. A method for utilizing the 2D window and the data filtering to yield a more robust and more accurate Localized Feature quantification methodology is disclosed.

10. 发明公开

EP3063785A1 PROCESS-INDUCED DISTORTION PREDICTION AND FEEDFORWARD AND FEEDBACK CORRECTION OF OVERLAY ERRORS 有权
标题翻译：过程引起的失真预测与远期有和覆盖面误差的反馈校正
公开(公告)号：EP3063785A1
公开(公告)日：2016-09-07
申请号：EP14857915.4
申请日：2014-10-29
申请人： Kla-Tencor Corporation
发明人： VUKKADALA, Pradeep , CHEN, Haiguang , SINHA, Jaydeep , VEERARAGHAVAN, Sathish
IPC分类号： H01L21/66
CPC分类号： G01N19/08 , C23C14/54 , G01L1/00 , G01L5/0047 , G03F7/705 , G03F7/70633 , G03F7/70783 , H01L22/12 , H01L22/20
摘要： Systems and methods for prediction and measurement of overlay errors are disclosed. Process-induced overlay errors may be predicted or measured utilizing film force based computational mechanics models. More specifically, information with respect to the distribution of film force is provided to a finite element (FE) model to provide more accurate point-by-point predictions in cases where complex stress patterns are present. Enhanced prediction and measurement of wafer geometry induced overlay errors are also disclosed.

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