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1. 发明申请

WO2020027784A1 REDUCING DEVICE OVERLAY ERRORS 审中-公开
公开(公告)号：WO2020027784A1
公开(公告)日：2020-02-06
申请号：PCT/US2018/044453
申请日：2018-07-30
申请人： KLA-TENCOR CORPORATION
发明人： YERUSHALMI, Liran , VOLKOVICH, Roie
IPC分类号： H01L21/66
摘要： Process control methods, metrology targets and production systems are provided for reducing or eliminating process overlay errors. Metrology targets have pair(s) of periodic structures with different segmentations, e.g., no segmentation in one periodic structure and device-like segmentation in the other periodic structure of the pair. Process control methods derive metrology measurements from the periodic structures at the previous layer directly following the production thereof, and prior to production of the periodic structures at the current layer, and use the derived measurements to adjust lithography stage(s) that is part of production of the current layer. Production system integrate lithography tool(s) and metrology tool(s) into a production feedback loop that enables layer-by-layer process adjustments.

2. 发明申请

WO2017053150A1 METHOD AND SYSTEM FOR PROCESS CONTROL WITH FLEXIBLE SAMPLING 审中-公开
标题翻译：用灵活采样方法控制的方法和系统
公开(公告)号：WO2017053150A1
公开(公告)日：2017-03-30
申请号：PCT/US2016/051743
申请日：2016-09-14
申请人： KLA-TENCOR CORPORATION
发明人： DEMIRER, Onur , VOLKOVICH, Roie , PIERSON, William , WAGNER, Mark , KLEIN, Dana
IPC分类号： H01L21/66 , H01L21/027
CPC分类号： G03F7/70616 , H01L22/12 , H01L22/20
摘要： The generation of flexible sparse metrology sample plans includes receiving a full set of metrology signals from one or more wafers from a metrology tool, determining a set of wafer properties based on the full set of metrology signals and calculating a wafer property metric associated with the set of wafer properties, calculating one or more independent characterization metrics based on the full set of metrology signals, and generating a flexible sparse sample plan based on the set of wafer properties, the wafer property metric, and the one or more independent characterization metrics. The one or more independent characterization metrics of the one or more properties calculated with metrology signals from the flexible sparse sampling plan is within a selected threshold from one or more independent characterization metrics of the one or more properties calculated with the full set of metrology signals.
摘要翻译：柔性稀疏测量样本计划的生成包括从计量工具接收来自一个或多个晶片的全套测量信号，基于全套度量信号确定一组晶片特性，并计算与该组相关联的晶片特性度量的晶片属性，基于整套测量信号计算一个或多个独立表征度量，以及基于所述晶片属性集合，所述晶片属性度量以及所述一个或多个独立表征度量来生成柔性稀疏样本计划。使用来自灵活稀疏采样计划的度量信号计算出的一个或多个属性的一个或多个独立特性度量值在由所述整套度量信号计算的一个或多个属性的一个或多个独立特性度量值的选定阈值内。

3. 发明申请

WO2015153497A1 FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY 审中-公开
标题翻译：使用散射测量方法的重点测量
公开(公告)号：WO2015153497A1
公开(公告)日：2015-10-08
申请号：PCT/US2015/023405
申请日：2015-03-30
申请人： KLA-TENCOR CORPORATION
发明人： EL KODADI, Mohammed , AMIR, Nuriel , VOLKOVICH, Roie , LEVINSKI, Vladimir , FELER, Yoel , KANDEL, Daniel , GUTMAN, Nadav , PANDEV, Stilian , SANKO, Dzmitry
IPC分类号： G02B15/14 , H04N7/18
CPC分类号： G06F17/5081 , G01N21/4785 , G03F7/70641 , G03F7/70683 , G06F17/5072
摘要： Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.
摘要翻译：提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元件的周期性结构。这些元件沿着与第一方向垂直的第二方向具有第二间距周期性，并且通过具有第二间距的交替的，聚焦敏感的和不对焦的图案在第二方向上表征。在所产生的目标中，第一节距可以是关于装置间距，而第二节距可以是数倍。可以产生第一个不对焦模式以产生第一临界尺寸，并且可以产生第二焦点敏感图案以产生仅当满足指定的焦点要求时可以等于第一临界尺寸的第二临界尺寸，或者基于沿着垂直方向的较长的间距来提供零和第一衍射级的散射测量。

4. 发明公开

EP3948937A1 METHOD FOR MEASURING AND CORRECTING MISREGISTRATION BETWEEN LAYERS IN A SEMICONDUCTOR DEVICE, AND MISREGISTRATION TARGETS USEFUL THEREIN 审中-实审
公开(公告)号：EP3948937A1
公开(公告)日：2022-02-09
申请号：EP19921663.1
申请日：2019-05-06
申请人： Kla-Tencor Corporation
发明人： VOLKOVICH, Roie , MILO, Renan , YERUSHALMI, Liran , ZABERCHIK, Moran , FELER, Yoel , IZRAELI, David
IPC分类号： H01L21/66 , H01L21/67

5. 发明公开

EP3942600A1 METHOD OF MEASURING MISREGISTRATION OF SEMICONDUCTOR DEVICES 审中-实审
公开(公告)号：EP3942600A1
公开(公告)日：2022-01-26
申请号：EP19917366.7
申请日：2019-04-12
申请人： Kla-Tencor Corporation
发明人： VOLKOVICH, Roie , DOLEV, Ido
IPC分类号： H01L21/66

6. 发明申请

WO2018089076A1 LITHOGRAPHY SYSTEMS WITH INTEGRATED METROLOGY TOOLS HAVING ENHANCED FUNCTIONALITIES 审中-公开
标题翻译：具有增强功能的集成度量工具的光刻系统
公开(公告)号：WO2018089076A1
公开(公告)日：2018-05-17
申请号：PCT/US2017/047742
申请日：2017-08-21
申请人： KLA-TENCOR CORPORATION
发明人： AMIT, Eran , VOLKOVICH, Roie , YERUSHALMI, Liran
IPC分类号： G03F7/20 , G03F7/00 , H01L21/027
摘要： Lithography systems and methods are provided with enhanced performance based on broader utilization of the integrated metrology tool in the printing tool to handle the metrology measurements in the system in a more sophisticated and optimized way. Additional operation channels are disclosed, enabling the integrated metrology tool to monitor and/or allocate metrology measurements thereby and by a standalone metrology tool with respect to specified temporal limitations of the printing tool; to adjust and optimize the metrology measurement recipes; to provide better process control to optimize process parameters of the printing tool; as well as to group process parameters of the printing tool according to a metrology measurements landscape.
摘要翻译：基于更广泛地利用印刷工具中的集成度量工具来以更复杂和优化的方式处理系统中的计量测量，提供具有增强性能的光刻系统和方法。公开了额外的操作通道，使得集成度量工具能够由此以及通过独立度量工具相对于打印工具的指定时间限制来监视和/或分配度量衡量; 调整和优化计量测量配方; 提供更好的过程控制以优化印刷工具的过程参数; 以及根据计量测量领域对印刷工具的工艺参数进行分类。

7. 发明申请

WO2015006604A1 IDENTIFYING REGISTRATION ERRORS OF DSA LINES 审中-公开
标题翻译：识别DSA线的注册错误
公开(公告)号：WO2015006604A1
公开(公告)日：2015-01-15
申请号：PCT/US2014/046220
申请日：2014-07-10
申请人： KLA-TENCOR CORPORATION
发明人： VOLKOVICH, Roie , AMIT, Eran , YOHANAN, Raviv
IPC分类号： H01L21/66
CPC分类号： G05B19/41875 , G03F7/0002 , G03F7/70625 , G05B2219/32368 , G05B2219/37224
摘要： Methods and respective modules are provided, configured to identify registration errors of DSA lines with respect to guiding lines in a produced structure, by comparing a measured signature of the structure with simulated signatures corresponding to simulated structures having varying simulated characteristics, and characterizing the produced structure according to the comparison. The characterization may be carried out using electromagnetic characterization of a geometric model or in a model-free manner by analyzing model-based results. Thus, for the first time, positioning and dimensional errors of DSA lines may be measured.
摘要翻译：提供方法和各个模块，其被配置为通过将结构的测量签名与对应于具有变化的模拟特征的模拟结构的模拟签名进行比较来识别DSA线相对于所产生的结构中的引导线的登记误差，以及表征所产生的结构根据比较。可以使用几何模型的电磁表征或者通过分析基于模型的结果以无模型的方式来进行表征。因此，可以首次测量DSA线的定位和尺寸误差。

8. 发明申请

WO2021006890A1 DATA-DRIVEN MISREGISTRATION PARAMETER CONFIGURATION AND MEASUREMENT SYSTEM AND METHOD 审中-公开
公开(公告)号：WO2021006890A1
公开(公告)日：2021-01-14
申请号：PCT/US2019/041095
申请日：2019-07-10
申请人： KLA-TENCOR CORPORATION
发明人： KATZ, Shlomit , VOLKOVICH, Roie , GOLOTSVAN, Anna , YOHANAN, Raviv
IPC分类号： H01L21/66 , H01L21/67
摘要： A data-driven misregistration parameter configuration and measurement system and method including simulating a plurality of measurement simulations of at least one multilayered semiconductor device, selected from a batch of multilayered semiconductor devices intended to be identical, using a plurality of sets of measurement parameter configurations, thereby generating simulation data for the at least one multilayered semiconductor device, identifying at least one set of recommended measurement parameter configurations, which is selected from the plurality of sets of measurement parameter configurations, providing a multilayered semiconductor device selected from the batch of multilayered semiconductor devices, providing the at least one recommended set of measurement parameter configurations to a misregistration metrology tool having multiple possible sets of measurement parameter configurations, measuring at least one multilayered semiconductor device, selected from the batch of multilayered semiconductor devices intended to be identical, using the at least one recommended set of measurement parameter configurations, thereby generating measurement data for the at least one multilayered semiconductor device, thereafter identifying a final recommended set of measurement parameter configurations and measuring misregistration of at least one multilayered semiconductor device, selected from the batch of multilayered semiconductor devices intended to be identical, using the final recommended set of measurement parameter configurations.

9. 发明申请

WO2020185242A1 DYNAMIC AMELIORATION OF MISREGISTRATION MEASUREMENT 审中-公开
公开(公告)号：WO2020185242A1
公开(公告)日：2020-09-17
申请号：PCT/US2019/033019
申请日：2019-05-19
申请人： KLA-TENCOR CORPORATION
发明人： VOLKOVICH, Roie , GOLOTSVAN, Anna , ABEND, Eyal
IPC分类号： H01L21/66 , H01L21/67
摘要： A dynamic misregistration measurement amelioration method including taking at least one misregistration measurement at multiple sites on a first semiconductor device wafer, which is selected from a batch of semiconductor device wafers intended to be identical, analyzing each of the misregistration measurements, using data from the analysis of each of the misregistration measurements to determine ameliorated misregistration measurement parameters at each one of the multiple sites, thereafter ameliorating misregistration metrology tool setup for ameliorated misregistration measurement at the each one of the multiple sites, thereby generating an ameliorated misregistration metrology tool setup and thereafter measuring misregistration at multiple sites on a second semiconductor device wafer, which is selected from the batch of semiconductor device wafers intended to be identical, using the ameliorated misregistration metrology tool setup.

10. 发明申请

WO2020176117A1 METHOD OF MEASURING MISREGISTRATION OF SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：WO2020176117A1
公开(公告)日：2020-09-03
申请号：PCT/US2019/027114
申请日：2019-04-12
申请人： KLA-TENCOR CORPORATION
发明人： VOLKOVICH, Roie , DOLEV, Ido
IPC分类号： H01L21/66
摘要： A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.

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