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1. 发明申请

WO2019173171A1 METROLOGY AND CONTROL OF OVERLAY AND EDGE PLACEMENT ERRORS 审中-公开
公开(公告)号：WO2019173171A1
公开(公告)日：2019-09-12
申请号：PCT/US2019/020471
申请日：2019-03-04
申请人： KLA-TENCOR CORPORATION
发明人： SHCHEGROV, Andrei V. , LASKE, Frank , GUTMAN, Nadav
IPC分类号： G03F7/20
摘要： An overlay metrology system may include a controller to generate optical tool error adjustments for a hybrid overlay target including optically-resolvable features and device-scale features by measuring a difference between an optical overlay measurement based on the optically-resolvable features and a device-scale overlay measurement based on the device-scale features, generate target-to-device adjustments for the hybrid overlay target based on positions of features within the device area, determine device-relevant overlay measurements for one or more locations in the device area based on at least one of the optical overlay measurement, the optical tool error adjustments, or the target-to-device adjustments, and provide overlay correctables for the device area to a lithography tool to modify exposure conditions for at least one subsequent exposure based on the device-relevant overlay measurements.

2. 发明申请

WO2015175425A1 APPARATUS, TECHNIQUES, AND TARGET DESIGNS FOR MEASURING SEMICONDUCTOR PARAMETERS 审中-公开
标题翻译：用于测量半导体参数的设备，技术和目标设计
公开(公告)号：WO2015175425A1
公开(公告)日：2015-11-19
申请号：PCT/US2015/030192
申请日：2015-05-11
申请人： KLA-TENCOR CORPORATION
发明人： SAPIENS, Noam , SHCHEGROV, Andrei V. , PANDEV, Stilian
IPC分类号： H01L21/66
CPC分类号： G01N21/93 , G01B2210/56 , G01N21/4788 , G01N21/9501 , G01N21/95607 , G01N2201/06113 , G01N2201/062 , G01N2201/10 , G01N2201/1296
摘要： In one embodiment, apparatus and methods for determining a parameter of a target are disclosed. A target having an imaging structure and a scatterometry structure is provided. An image of the imaging structure is obtained with an imaging channel of a metrology tool. A scatterometry signal is also obtained from the scatterometry structure with a scatterometry channel of the metrology tool. At least one parameter, such as overlay error, of the target is determined based on both the image and the scatterometry signal.
摘要翻译：在一个实施例中，公开了用于确定目标的参数的装置和方法。提供具有成像结构和散射测量结构的目标。使用计量工具的成像通道获得成像结构的图像。散射测量信号也通过散度仪结构与计量工具的散射测量通道获得。基于图像和散射测量信号确定目标的至少一个参数，例如重叠误差。

3. 发明申请

WO2015027088A1 MULTI-MODEL METROLOGY 审中-公开
标题翻译：多模式计量学
公开(公告)号：WO2015027088A1
公开(公告)日：2015-02-26
申请号：PCT/US2014/052142
申请日：2014-08-21
申请人： KLA-TENCOR CORPORATION
发明人： KIM, In-Kyo , LI, Xin , POSLAVSKY, Leonid , LEE, Lie-Quan Rich , CAO, Meng , YOO, Sungchul , PARK, Sangbong , SHCHEGROV, Andrei V.
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , G03F7/70616 , G03F7/70625 , G06F17/5068 , H01L21/67288 , H01L22/12
摘要： Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.
摘要翻译：公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。产生具有浮动和固定关键参数和对应的模拟光谱的变化组合的多个模型。生成每个模型以基于从这样的未知结构收集的光谱来确定未知结构的一个或多个关键参数。基于包括多个关键参数和相应的已知光谱中的每一个的多个已知值的参考数据，确定哪一个模型与每个关键参数最佳相关。对于使用计量工具从未知结构获得的光谱，选择不同的模型并且用于基于确定哪一个模型与每个关键参数最相关的来确定未知结构的关键参数的不同的参数参考数据。

4. 发明公开

EP3709341A1 MEASUREMENT OF MULTIPLE PATTERNING PARAMETERS 审中-实审
公开(公告)号：EP3709341A1
公开(公告)日：2020-09-16
申请号：EP20171643.8
申请日：2014-12-23
申请人： Kla-Tencor Corporation
发明人： SHCHEGROV, Andrei V. , KRISHNAN, Shankar , PTERLINZ, Kevin , DZIURA, Thaddeus Gerard , SAPIEN, Noam , PANDEV, Stilian Ivanov
IPC分类号： H01L21/66
摘要： Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.

5. 发明申请

WO2015172027A1 SIGNAL RESPONSE METROLOGY FOR SCATTEROMETRY BASED OVERLAY MEASUREMENTS 审中-公开
标题翻译：基于散射测量的信号响应方程式的覆盖测量
公开(公告)号：WO2015172027A1
公开(公告)日：2015-11-12
申请号：PCT/US2015/029896
申请日：2015-05-08
申请人： KLA-TENCOR CORPORATION
发明人： SHCHEGROV, Andrei V. , PANDEV, Stilian Ivanov , MADSEN, Jonathan M. , KUZNETSOV, Alexander , MIEHER, Walter Dean
IPC分类号： H01L21/66
CPC分类号： G01N21/9501 , G01B11/27 , G06N99/005
摘要： Methods and systems for creating a measurement model based only on measured training data are presented. The trained measurement model is then used to calculate overlay values directly from measured scatterometry data. The measurement models receive scatterometry signals directly as input and provide overlay values as output. In some embodiments, overlay error is determined from measurements of design rule structures. In some other embodiments, overlay error is determined from measurements of specialized target structures. In a further aspect, the measurement model is trained and employed to measure additional parameters of interest, in addition to overlay, based on the same or different metrology targets. In some embodiments, measurement data from multiple targets, measurement data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the measurement model building and training process.
摘要翻译：提出了仅基于测量训练数据创建测量模型的方法和系统。然后使用经过训练的测量模型直接从测量的散射测量数据计算覆盖值。测量模型直接接收散射信号作为输入，并提供重叠值作为输出。在一些实施例中，根据设计规则结构的测量确定覆盖误差。在一些其它实施例中，通过专门的目标结构的测量来确定覆盖误差。在另一方面，测量模型被训练并用于基于相同或不同的度量目标来测量除叠加之外的附加参数。在一些实施例中，来自多个目标的测量数据，由多个计量学收集的测量数据或两者都用于建模，训练和测量。在一些实施例中，优化算法使测量模型构建和训练过程自动化。

6. 发明申请

WO2016115385A1 MEASUREMENT SYSTEM OPTIMIZATION FOR X-RAY BASED METROLOGY 审中-公开
标题翻译：基于X射线的量测系统的测量系统优化
公开(公告)号：WO2016115385A1
公开(公告)日：2016-07-21
申请号：PCT/US2016/013467
申请日：2016-01-14
申请人： KLA-TENCOR CORPORATION
发明人： HENCH, John J. , SHCHEGROV, Andrei V. , BAKEMAN, Michael S.
IPC分类号： H01L21/66
CPC分类号： G01N23/20008
摘要： Methods and systems for optimizing measurement system parameter settings of an x-ray based metrology system are presented. X-ray based metrology systems employing an optimized set of measurement system parameters are used to measure structural, material, and process characteristics associated with different semiconductor fabrication processes with greater precision and accuracy. In one aspect, a set of values of one or more machine parameters that specify a measurement scenario is refined based at least in part on a sensitivity of measurement data to a previous set of values of the one or more machine parameters. The refinement of the values of the machine parameters is performed to maximize precision, maximize accuracy, minimize correlation between parameters of interest, or any combination thereof. Refinement of the machine parameter values that specify a measurement scenario can be used to optimize the measurement recipe to reduce measurement time and increase measurement precision and accuracy.
摘要翻译：介绍了基于x射线的测量系统优化测量系统参数设置的方法和系统。使用采用优化的测量系统参数集的基于X射线的测量系统以更高的精度和精度测量与不同半导体制造工艺相关联的结构，材料和工艺特性。在一个方面，至少部分地基于测量数据对一个或多个机器参数的先前的一组值的灵敏度来改进指定测量场景的一个或多个机器参数的一组值。执行机器参数的值的精细化以最大化精度，最大化精度，最小化关注参数之间的相关性或其任何组合。可以使用指定测量场景的机器参数值的优化来优化测量配方，以减少测量时间，并提高测量精度和精度。

7. 发明申请

WO2014189853A1 METROLOGY SYSTEM OPTIMIZATION FOR PARAMETER TRACKING 审中-公开
标题翻译：用于参数跟踪的计量系统优化
公开(公告)号：WO2014189853A1
公开(公告)日：2014-11-27
申请号：PCT/US2014/038643
申请日：2014-05-19
申请人： KLA-TENCOR CORPORATION
发明人： VELDMAN, Andrei , SHCHEGROV, Andrei V. , BRADY, Gregory , DZIURA, Thaddeus Gerard , PANDEV, Stilian , KUZNETSOV, Alexander
IPC分类号： H01L21/66
CPC分类号： G01N21/211 , G01B11/0625 , G01B11/0641 , G01B2210/56 , G01N21/9501 , G01N2021/213
摘要： Methods and systems for evaluating the capability of a measurement system to track measurement parameters through a given process window are presented herein. Performance evaluations include random perturbations, systematic perturbations, or both to effectively characterize the impact of model errors, metrology system imperfections, and calibration errors, among others. In some examples, metrology target parameters are pre-determined as part of a Design of Experiments (DOE). Estimated values of the metrology target parameters are compared to the known DOE parameter values to determine the tracking capability of the particular measurement. In some examples, the measurement model is parameterized by principal components to reduce the number of degrees of freedom of the measurement model. In addition, exemplary methods and systems for optimizing the measurement capability of semiconductor metrology systems for metrology applications subject to process variations are presented.
摘要翻译：本文介绍了用于评估测量系统通过给定过程窗口跟踪测量参数的能力的方法和系统。性能评估包括随机扰动，系统扰动或两者，以有效表征模型误差，计量系统缺陷和校准误差等的影响。在一些示例中，度量目标参数作为实验设计（DOE）的一部分被预先确定。将度量目标参数的估计值与已知的DOE参数值进行比较，以确定特定测量的跟踪能力。在一些示例中，测量模型由主要组件参数化，以减少测量模型的自由度。此外，提出了用于优化用于受过程变化的度量应用的半导体测量系统的测量能力的示例性方法和系统。

8. 发明申请

WO2014130829A1 SYSTEMS FOR PROVIDING ILLUMINATION IN OPTICAL METROLOGY 审中-公开
标题翻译：用于在光学计量学中提供照明的系统
公开(公告)号：WO2014130829A1
公开(公告)日：2014-08-28
申请号：PCT/US2014/017723
申请日：2014-02-21
申请人： KLA-TENCOR CORPORATION
发明人： BRADY, Gregory , SHCHEGROV, Andrei V. , ROTTER, Lawrence D. , SHAUGHNESSY, Derrick , SHCEMELININ, Anatoly , BEZEL, Ilya , ARAIN, Muzammil , VASILIEV, Anatoly , ALLEN, James , SHULEPOV, Oleg , HILL, Andrew , BACHAR, Ohad , MARKOWITZ, Moshe , ISH-SHALOM, Yaron , SELA, Ilan , MANASSEN, Amnon , SVIZHER, Alexander , KHOKHLOV, Maxim , ABRAMOV, Avi , TSIBULEVSKY, Oleg , KANDEL, Daniel , GHINOVKER, Mark
IPC分类号： H01L21/66
CPC分类号： G01J3/10 , F21V13/00 , F21V13/08 , F21V13/12 , G01J3/0218 , G01J3/12 , G02B6/29332 , G02B6/29362 , G02B6/29388 , G02B6/29395 , G02B6/3508 , G02B6/353 , H01J65/04
摘要： The disclosure is directed to systems for providing illumination to a measurement head for optical metrology. In some embodiments of the disclosure, illumination beams from a plurality of illumination sources are combined to deliver illumination at one or more selected wavelengths to the measurement head. In some embodiments of the disclosure, intensity and/or spatial coherence of illumination delivered to the measurement head is controlled. In some embodiments of the disclosure, illumination at one or more selected wavelengths is delivered from a broadband illumination source configured for providing illumination at a continuous range of wavelengths.
摘要翻译：本公开涉及用于向用于光学测量的测量头提供照明的系统。在本公开的一些实施例中，来自多个照明源的照明光束被组合以将一个或多个所选波长的照明传送到测量头。在本公开的一些实施例中，控制传送到测量头的照明的强度和/或空间相干性。在本公开的一些实施例中，一个或多个所选波长的照明从配置成在连续波长范围内提供照明的宽带照明源传送。

9. 发明申请

WO2013067229A2 SECONDARY TARGET DESIGN FOR OPTICAL MEASUREMENTS 审中-公开
标题翻译：光学测量的二级目标设计
公开(公告)号：WO2013067229A2
公开(公告)日：2013-05-10
申请号：PCT/US2012/063125
申请日：2012-11-01
申请人： KLA-TENCOR CORPORATION
发明人： YOO, Sungchul , SHCHEGROV, Andrei V. , DZIURA, Thaddeus G. , KIM, InKyo , LEE, SeungHwan , HWANG, ByeongSu , POSLAVSKY, Leonid
CPC分类号： G06F17/50 , G01N21/47 , G01N21/956 , G03F7/70625 , G03F7/70683 , G06F17/10 , G06F17/40 , G06F19/00
摘要： The disclosure is directed to improving optical metrology for a sample with complex structural attributes utilizing custom designed secondary targets. At least one parameter of a secondary target may be controlled to improve sensitivity for a selected parameter of a primary target and/or to reduce correlation of the selected parameter with other parameters of the primary target. Parameters for the primary and secondary target may be collected. The parameters may be incorporated into scatterometry model. Simulations utilizing the scatterometry model may be conducted to determine a level of sensitivity or a level of correlation for the selected parameter of the primary target. The controlled parameter of the secondary target may be modified until a selected level of sensitivity or a selected level of correlation is achieved.
摘要翻译：本公开针对利用定制设计的次要目标来改进具有复杂结构属性的样品的光学计量。可以控制次要目标的至少一个参数以提高主要目标的选定参数的灵敏度和/或减少所选参数与主要目标的其他参数的相关性。主要和次要目标的参数可以被收集。这些参数可以结合到散射测量模型中。可以进行利用散射测量模型的模拟以确定主要目标的所选参数的灵敏度水平或相关水平。次级目标的受控参数可以被修改，直到获得选定的灵敏度级别或选定的关联级别。

10. 发明申请

WO2016183031A1 OPTICAL METROLOGY WITH SMALL ILLUMINATION SPOT SIZE 审中-公开
标题翻译：具有小照明尺寸的光学计量学
公开(公告)号：WO2016183031A1
公开(公告)日：2016-11-17
申请号：PCT/US2016/031526
申请日：2016-05-09
申请人： KLA-TENCOR CORPORATION
发明人： SAPIENS, Noam , PETERLINZ, Kevin A. , BUETTNER, Alexander , PURRUCKER, Kerstin , SHCHEGROV, Andrei V.
IPC分类号： G01N21/956
CPC分类号： G01B11/24 , G01B2210/56 , G01N21/956 , G01N2021/213 , G03F7/70625
摘要： Methods and systems are presented to reduce the illumination spot size projected onto a measurement target and associated spillover onto area surrounding a measurement target. In one aspect, a spatial light modulator (SLM) is located in the illumination path between the illumination light source and the measurement sample. The SLM is configured to modulate amplitude, phase, or both, across the path of the illumination light to reduce wavefront errors. In some embodiments, the desired state of the SLM is based on wavefront measurements performed in an optical path of the metrology system. In another aspect, an illumination aperture having an image plane tilted at an oblique angle with respect to a beam of illumination light is employed to overcome defocusing effects in metrology systems that employ oblique illumination of the measurement sample. In some embodiments, the illumination aperture, objective lens, and specimen are aligned to satisfy the Scheimpflug condition.
摘要翻译：呈现方法和系统以减少投影到测量目标上的照明光点尺寸和相关联的外溢到测量目标周围的区域。在一个方面，空间光调制器（SLM）位于照明光源和测量样本之间的照明路径中。 SLM被配置为在照明光的路径上调制幅度，相位或两者以减少波前误差。在一些实施例中，SLM的期望状态基于在计量系统的光路中执行的波前测量。在另一方面，采用具有相对于照明光束倾斜倾斜角的图像平面的照明孔，以克服采用测量样品的倾斜照明的度量系统中的散焦效应。在一些实施例中，照明孔径，物镜和样本被对准以满足Scheimpflug条件。

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