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1. 发明申请

WO2012109441A3 WIDE PROCESS RANGE LIBRARY FOR METROLOGY 审中-公开
公开(公告)号：WO2012109441A3
公开(公告)日：2012-08-16
申请号：PCT/US2012/024477
申请日：2012-02-09
申请人： TOKYO ELECTRON LIMITED , KLA-TENCOR CORPORATION , HENCH, John J. , JIN, Wen , BAO, Junwei
发明人： HENCH, John J. , JIN, Wen , BAO, Junwei
IPC分类号： H01L21/00
摘要： Methods of generating wide process range libraries for metrology are described. For example, a method includes generating a first library having a first process range for a first parameter. A second library is generated having a second process range for the first parameter. The second process range is overlapping with the first process range. The second library is stitched to the first library to generate a third library having a third process range for the first parameter. The third process range is wider than each of the first and second process ranges.

2. 发明申请

WO2016115385A1 MEASUREMENT SYSTEM OPTIMIZATION FOR X-RAY BASED METROLOGY 审中-公开
标题翻译：基于X射线的量测系统的测量系统优化
公开(公告)号：WO2016115385A1
公开(公告)日：2016-07-21
申请号：PCT/US2016/013467
申请日：2016-01-14
申请人： KLA-TENCOR CORPORATION
发明人： HENCH, John J. , SHCHEGROV, Andrei V. , BAKEMAN, Michael S.
IPC分类号： H01L21/66
CPC分类号： G01N23/20008
摘要： Methods and systems for optimizing measurement system parameter settings of an x-ray based metrology system are presented. X-ray based metrology systems employing an optimized set of measurement system parameters are used to measure structural, material, and process characteristics associated with different semiconductor fabrication processes with greater precision and accuracy. In one aspect, a set of values of one or more machine parameters that specify a measurement scenario is refined based at least in part on a sensitivity of measurement data to a previous set of values of the one or more machine parameters. The refinement of the values of the machine parameters is performed to maximize precision, maximize accuracy, minimize correlation between parameters of interest, or any combination thereof. Refinement of the machine parameter values that specify a measurement scenario can be used to optimize the measurement recipe to reduce measurement time and increase measurement precision and accuracy.
摘要翻译：介绍了基于x射线的测量系统优化测量系统参数设置的方法和系统。使用采用优化的测量系统参数集的基于X射线的测量系统以更高的精度和精度测量与不同半导体制造工艺相关联的结构，材料和工艺特性。在一个方面，至少部分地基于测量数据对一个或多个机器参数的先前的一组值的灵敏度来改进指定测量场景的一个或多个机器参数的一组值。执行机器参数的值的精细化以最大化精度，最大化精度，最小化关注参数之间的相关性或其任何组合。可以使用指定测量场景的机器参数值的优化来优化测量配方，以减少测量时间，并提高测量精度和精度。

3. 发明申请

WO2015061312A1 SMALL-ANGLE SCATTERING X-RAY METROLOGY SYSTEMS AND METHODS 审中-公开
标题翻译：小角度散射X射线量子系统和方法
公开(公告)号：WO2015061312A1
公开(公告)日：2015-04-30
申请号：PCT/US2014/061573
申请日：2014-10-21
申请人： KLA-TENCOR CORPORATION
发明人： BAKEMAN, Michael , SHCHEGROV, Andrei , LEVY, Ady , ZHUANG, Guorong Vera , HENCH, John J.
IPC分类号： H01L21/66 , H01L21/268
CPC分类号： G01N23/201 , G01N2033/0095
摘要： Disclosed are apparatus and methods for performing small angle x-ray scattering metrology. This system includes an x-ray source for generating x-rays and illumination optics for collecting and reflecting or refracting a portion of the generated x-rays towards a particular focus point on a semiconductor sample in the form of a plurality of incident beams at a plurality of different angles of incidence (AOIs). The system further includes a sensor for collecting output x-ray beams that are scattered from the sample in response to the incident beams on the sample at the different AOIs and a controller configured for controlling operation of the x-ray source and illumination optics and receiving the output x-rays beams and generating an image from such output x-rays.
摘要翻译：公开了用于执行小角度X射线散射测量的装置和方法。该系统包括用于产生X射线的X射线源和照明光学器件，用于收集并折射所产生的X射线的一部分朝着半导体样本上的特定聚焦点以多个入射光束的形式反射或折射多个不同的入射角（AOI）。该系统还包括传感器，用于响应于在不同AOI处的样品上的入射光束而从样品收集输出的X射线束，以及控制器，被配置为控制X射线源和照明光学器件的接收和接收输出x射线束并从这样的输出x射线产生图像。

4. 发明公开

EP2673797A2 WIDE PROCESS RANGE LIBRARY FOR METROLOGY 审中-公开
标题翻译：库具有宽范围的加工测量
公开(公告)号：EP2673797A2
公开(公告)日：2013-12-18
申请号：EP12744611.0
申请日：2012-02-09
申请人： Tokyo Electron Limited , KLA-Tencor Corporation
发明人： HENCH, John J. , JIN, Wen , BAO, Junwei
IPC分类号： H01L21/00
CPC分类号： G03F7/70491 , G03F7/70625 , H01L22/12
摘要： Methods of generating wide process range libraries for metrology are described. For example, a method includes generating a first library having a first process range for a first parameter. A second library is generated having a second process range for the first parameter. The second process range is overlapping with the first process range. The second library is stitched to the first library to generate a third library having a third process range for the first parameter. The third process range is wider than each of the first and second process ranges.

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