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1. 发明申请

WO2012106147A3 PROCESS CONDITION MEASURING DEVICE (PCMD) AND METHOD FOR MEASURING PROCESS CONDITIONS IN A WORKPI ECE PROCESSING TOOL CONFIGURED TO PROCESS PRODUCTION WORKPIECES 审中-公开
标题翻译：工艺条件测量装置（PCMD）和用于测量工艺过程条件的方法用于处理生产工作的工程师ECE加工工具
公开(公告)号：WO2012106147A3
公开(公告)日：2012-11-08
申请号：PCT/US2012022352
申请日：2012-01-24
申请人： KLA TENCOR CORP , SUN MEI , QULI FARHAT , JENSEN EARL , ARLEO PAUL , VISHAL VAIBHAW
发明人： SUN MEI , QULI FARHAT , JENSEN EARL , ARLEO PAUL , VISHAL VAIBHAW
IPC分类号： H01L21/02 , G01K7/16
CPC分类号： G01K17/00 , H01L21/67248
摘要： A process condition measuring device (PCMD) may include first and second substrate components. One or more temperature sensors are embedded within each substrate component. The first and second substrate components are sandwiched together such that each temperature sensor in the second substrate component is aligned in tandem with a corresponding temperature sensor located in the first substrate component. Alternatively first and second temperature sensors may be positioned in parallel in the same substrate. Temperature differences may be measured between pairs of corresponding temperature sensors when the PCMD is subjected to process conditions in a workpiece processing tool. Process conditions in the tool may be calculated from the temperature differences.
摘要翻译：工艺条件测量装置（PCMD）可以包括第一和第二衬底部件。一个或多个温度传感器嵌入每个基板部件内。将第一和第二基板部件夹在一起，使得第二基板部件中的每个温度传感器与位于第一基板部件中的对应的温度传感器串联对准。或者，第一和第二温度传感器可以在同一衬底中平行定位。当PCMD在工件处理工具中经受工艺条件时，可以在成对的相应温度传感器之间测量温差。工具中的工艺条件可以根据温差计算。

2. 发明申请

WO2012047428A3 ETCH-RESISTANT COATING ON SENSOR WAFERS FOR IN-SITU MEASUREMENT 审中-公开
标题翻译：用于现场测量的传感器波纹耐蚀涂层
公开(公告)号：WO2012047428A3
公开(公告)日：2012-07-19
申请号：PCT/US2011050272
申请日：2011-09-01
申请人： KLA TENCOR CORP , NGUYEN ANDREW , QULI FARHAT , SUN MEI , VENKATESAN VASUDEV
发明人： NGUYEN ANDREW , QULI FARHAT , SUN MEI , VENKATESAN VASUDEV
IPC分类号： H01L21/66
CPC分类号： H01L21/67253 , G01J5/045 , H01J37/32935 , H01L23/28
摘要： A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or substrate. The coating is configured to resist etch processes that etch the cover and/or substrate for a longer period than standard thin film materials of the same or greater thickness than the protective coating.
摘要翻译：传感器晶片可以被配置用于在蚀刻过程期间进行参数的原位测量。传感器晶片可以包括基板，盖，以及定位在基板和盖之间的一个或多个部件。在覆盖物和/或基底的一个或多个表面上形成耐蚀刻涂层。该涂层被配置为抵抗蚀刻工艺，该蚀刻工艺比保护涂层具有相同或更大厚度的标准薄膜材料更长的时间刻蚀覆盖物和/或基材。

3. 发明专利

DE112011103266T5 Ätzresistente Beschichtung auf Sensor-Wafern für in situ-Messungen 未知
公开(公告)号：DE112011103266T5
公开(公告)日：2013-10-10
申请号：DE112011103266
申请日：2011-09-01
申请人： KLA TENCOR CORP
发明人： QULI FARHAT , VENKATESAN VASUDEV , SUN MEI , NGUYEN ANDREW
IPC分类号： H01L21/66
摘要： Ein Sensor-Wafer kann zu in situ-Messungen von Parametern während eines Ätzprozesses konfiguriert werden. Der Sensor-Wafer kann ein Substrat, eine Abdeckung und eine oder mehrere zwischen dem Substrat und der Abdeckung angeordnete Komponenten umfassen. Eine ätzresistente Beschichtung wird auf einer oder mehreren Oberflächen der Abdeckung und/oder des Substrats ausgebildet. Die Beschichtung ist so ausgestaltet, dass sie Ätzprozessen, die die Abdeckung und/oder das Substrat ätzen, für einen längeren Zeitraum als Standard-Dünnfilm-Materialien gleicher oder größerer Dicke widersteht.

4. 发明申请

WO2013090631A3 FILM THICKNESS MONITOR 审中-公开
标题翻译：电影厚度监视器
公开(公告)号：WO2013090631A3
公开(公告)日：2015-06-04
申请号：PCT/US2012069582
申请日：2012-12-13
申请人： KLA TENCOR CORP
发明人： JENSEN EARL , O'BRIEN KEVIN , QULI FARHAT , SUN MEI
IPC分类号： G01B11/06
CPC分类号： G01B11/06 , G01B9/02051 , G01B11/0625 , G01B11/0641 , G01B11/0675 , G01B11/0683
摘要： Aspects of the present disclosure include methods and apparatuses for measuring the rate of change of the thickness of a material layer in situ. A measurement unit comprising a light source and a photodetector may be formed in a cavity in a substrate. The light source produces light that impinges a material layer and is reflected back to the photodetector. Through methods such as interferometry and ellipsometry, the thickness of the material layer may be calculated from the light intensity data measured by the photodetector. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：本公开的方面包括用于原位测量材料层的厚度变化率的方法和装置。包括光源和光电检测器的测量单元可以形成在基板中的空腔中。光源产生照射材料层并被反射回光电检测器的光。通过诸如干涉测量和椭偏仪的方法，材料层的厚度可以由光电检测器测量的光强度数据计算。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

5. 发明申请

WO2014194077A3 METHOD AND SYSTEM FOR MEASURING HEAT FLUX 审中-公开
标题翻译：测量热通量的方法和系统
公开(公告)号：WO2014194077A3
公开(公告)日：2015-03-26
申请号：PCT/US2014040002
申请日：2014-05-29
申请人： KLA TENCOR CORP
发明人： SHARRATT STEPHEN , QULI FARHAT , JENSEN EARL , SUN MEI
IPC分类号： G01K17/00
CPC分类号： G01K19/00 , G01K17/00
摘要： A heat flux sensor equipped measurement wafer includes a substrate, a cover thermally coupled to a portion of the substrate, a sensor cavity formed between the substrate and the cover, a thermal barrier disposed within at least a portion of the sensor cavity, a bottom temperature sensor thermally coupled to the substrate and insulated from the cover by a portion of the thermal barrier and a top temperature sensor thermally coupled to the cover and insulated from the substrate by an additional portion of the thermal barrier, wherein a temperature difference between the bottom temperature sensor and the top temperature sensor is related to a heat flux passing through the substrate and cover proximate to the sensor cavity.
摘要翻译：配备有热量传感器的测量晶片包括基板，热耦合到基板的一部分的盖，形成在基板和盖之间的传感器腔，设置在传感器腔的至少一部分内的热障，底部温度传感器热耦合到衬底并且由热屏障的一部分与盖隔离，并且顶部温度传感器热耦合到盖并通过热障的另外部分与衬底绝缘，其中底部温度传感器和顶部温度传感器与通过基板和靠近传感器腔的盖子的热通量有关。

6. 发明公开

EP2671246A4 PROCESS CONDITION MEASURING DEVICE (PCMD) AND METHOD FOR MEASURING PROCESS CONDITIONS IN A WORKPI ECE PROCESSING TOOL CONFIGURED TO PROCESS PRODUCTION WORKPIECES 有权
标题翻译：用于测量过程的条件和程序测量工艺条件生产加工之WORKPIECES CONFIGURED工具
公开(公告)号：EP2671246A4
公开(公告)日：2014-11-19
申请号：EP12742613
申请日：2012-01-24
申请人： KLA TENCOR CORP
发明人： SUN MEI , QULI FARHAT , JENSEN EARL , ARLEO PAUL , VISHAL VAIBHAW
IPC分类号： H01L21/67 , G01K17/00
CPC分类号： G01K17/00 , H01L21/67248
摘要： A process condition measuring device (PCMD) may include first and second substrate components. One or more temperature sensors are embedded within each substrate component. The first and second substrate components are sandwiched together such that each temperature sensor in the second substrate component is aligned in tandem with a corresponding temperature sensor located in the first substrate component. Alternatively first and second temperature sensors may be positioned in parallel in the same substrate. Temperature differences may be measured between pairs of corresponding temperature sensors when the PCMD is subjected to process conditions in a workpiece processing tool. Process conditions in the tool may be calculated from the temperature differences.

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