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1. 发明申请

WO2012106147A3 PROCESS CONDITION MEASURING DEVICE (PCMD) AND METHOD FOR MEASURING PROCESS CONDITIONS IN A WORKPI ECE PROCESSING TOOL CONFIGURED TO PROCESS PRODUCTION WORKPIECES 审中-公开
标题翻译：工艺条件测量装置（PCMD）和用于测量工艺过程条件的方法用于处理生产工作的工程师ECE加工工具
公开(公告)号：WO2012106147A3
公开(公告)日：2012-11-08
申请号：PCT/US2012022352
申请日：2012-01-24
申请人： KLA TENCOR CORP , SUN MEI , QULI FARHAT , JENSEN EARL , ARLEO PAUL , VISHAL VAIBHAW
发明人： SUN MEI , QULI FARHAT , JENSEN EARL , ARLEO PAUL , VISHAL VAIBHAW
IPC分类号： H01L21/02 , G01K7/16
CPC分类号： G01K17/00 , H01L21/67248
摘要： A process condition measuring device (PCMD) may include first and second substrate components. One or more temperature sensors are embedded within each substrate component. The first and second substrate components are sandwiched together such that each temperature sensor in the second substrate component is aligned in tandem with a corresponding temperature sensor located in the first substrate component. Alternatively first and second temperature sensors may be positioned in parallel in the same substrate. Temperature differences may be measured between pairs of corresponding temperature sensors when the PCMD is subjected to process conditions in a workpiece processing tool. Process conditions in the tool may be calculated from the temperature differences.
摘要翻译：工艺条件测量装置（PCMD）可以包括第一和第二衬底部件。一个或多个温度传感器嵌入每个基板部件内。将第一和第二基板部件夹在一起，使得第二基板部件中的每个温度传感器与位于第一基板部件中的对应的温度传感器串联对准。或者，第一和第二温度传感器可以在同一衬底中平行定位。当PCMD在工件处理工具中经受工艺条件时，可以在成对的相应温度传感器之间测量温差。工具中的工艺条件可以根据温差计算。

2. 发明申请

WO2012173999A3 WAFER LEVEL SPECTROMETER 审中-公开
公开(公告)号：WO2012173999A3
公开(公告)日：2013-07-04
申请号：PCT/US2012042065
申请日：2012-06-12
申请人： KLA TENCOR CORP , JENSEN EARL , SUN MEI , O'BRIEN KEVIN
发明人： JENSEN EARL , SUN MEI , O'BRIEN KEVIN
IPC分类号： G01J3/02
CPC分类号： G01J3/0259 , G01J1/58 , G01J3/0205 , G01J3/021 , G01J3/0256 , G01J3/0262 , G01J3/36 , G01J2003/1213
摘要： A sensor apparatus for measuring characteristics of optical radiation has a substrate and a low profile spectrally selective detection system located within the substrate at one or more spatially separated locations. The spectrally selective detection system includes a generally laminar array of wavelength selectors optically coupled to a corresponding array of optical detectors. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：用于测量光辐射特性的传感器装置具有位于一个或多个空间分离位置的衬底内的衬底和低剖面光谱选择性检测系统。光谱选择性检测系统包括光学耦合到相应阵列的光学检测器的波长选择器的大体层流阵列。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

3. 发明申请

WO2011090850A2 PROCESS CONDITION SENSING DEVICE FOR PLASMA CHAMBER 审中-公开
标题翻译：用于等离子体室的过程状态感测装置
公开(公告)号：WO2011090850A2
公开(公告)日：2011-07-28
申请号：PCT/US2011020872
申请日：2011-01-11
申请人： KLA TENCOR CORP , JENSEN EARL , SUN MEI
发明人： JENSEN EARL , SUN MEI
IPC分类号： H05H1/46 , G01N27/60 , H01L21/205
CPC分类号： H01J37/32954 , G01R19/0061 , H01J37/32 , H01J37/32917 , H01J37/32935 , H01L21/67069 , H01L21/67253 , H01L22/34
摘要： A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).
摘要翻译：用于测量用于处理工件的等离子体室中的等离子体工艺参数的感测装置可以包括具有嵌入在衬底中的一个或多个传感器的衬底。基板可以具有由在等离子体室中等离子体处理的与工件基本相同的材料制成的表面。每个传感器可以包括由与基底表面基本相同的材料制成的收集器部分。集电器部分包括与衬底的表面平齐的表面。传感器电子器件嵌入基板并耦合到收集器部分。当衬底表面暴露于等离子体时，可以用传感器测量由等离子体产生的一个或多个信号。

4. 发明申请

WO2011038036A3 NON-CONTACT INTERFACE SYSTEM 审中-公开
标题翻译：非接触式接口系统
公开(公告)号：WO2011038036A3
公开(公告)日：2011-06-30
申请号：PCT/US2010049877
申请日：2010-09-22
申请人： KLA TENCOR CORP , JENSEN EARL , MASON ARON
发明人： JENSEN EARL , MASON ARON
IPC分类号： H01L21/66
CPC分类号： H01L21/67253 , H02J5/005 , H02J7/025 , H02J50/10 , H04B5/0043
摘要： An interface system for a sensor wafer may comprise a sensor wafer having a substrate. One or more sensors may be mounted to the substrate. An electronics module may be mounted to the substrate and coupled to the one or more sensors. An energy storage device may be mounted to the substrate and coupled to the electronics module. A secondary coil may be attached to a surface of the sensor wafer, and coupled to the electronics module of the sensor wafer, having a diameter of at least 50 millimeters. A primary coil may be attached to a front opening universal pod (FOUP). The primary coil, may situated and oriented in the FOUP such that the primary coil is concentric with the secondary coil and at least 8, but less than 12 millimeters from the sensor wafer when the sensor wafer is stored in a slot in the FOUP.
摘要翻译：用于传感器晶片的界面系统可以包括具有基底的传感器晶片。可以将一个或多个传感器安装到基底。电子模块可以安装到基板并且耦合到一个或多个传感器。能量存储装置可以安装到基板并且耦合到电子模块。次级线圈可以附接到传感器晶片的表面，并且耦合到传感器晶片的电子模块，其直径至少为50毫米。初级线圈可以附接到前开口通用荚（FOUP）。初级线圈可以定位并定向在FOUP中，使得当传感器晶片存储在FOUP中的槽中时，初级线圈与次级线圈同心并且距离传感器晶片至少8个但小于12mm。

5. 发明专利

JP2011151399A Integrated process condition sensing wafer and data analysis system 有权
标题翻译：综合过程感知波形和数据分析系统
公开(公告)号：JP2011151399A
公开(公告)日：2011-08-04
申请号：JP2011024346
申请日：2011-02-07
申请人： Kla-Tencor Corp , ケーエルエー−テンカーコーポレイション
发明人： RENKEN WAYNE G , JENSEN EARL , GORDON ROY
IPC分类号： H01L21/02 , H01L21/00 , H01L21/677
CPC分类号： H01L21/67253 , H01L2224/48091 , H01L2924/01087 , H01L2924/10253 , H01L2924/12041 , H01L2924/15153 , H01L2924/15157 , H01L2924/15165 , H01L2924/16152 , H01L2924/16153 , H01L2924/16195 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To highly integrate a process condition measuring device and a handling system with a production environment.
SOLUTION: In integration, the dimensions of the process condition measuring device are set close to those of a production substrate, and the handling system 880 is made similar to a substrate carrier used for the production substrate. Process conditions are measured with little disturbance to the production environment. Data are transferred from the process condition measuring device to a user without accompanying human interventions.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：将生产环境的过程状态测量装置和处理系统高度整合。解决方案：在整合中，将工艺状态测量装置的尺寸设置为接近制造基板的尺寸，并且处理系统880被制成与用于生产基板的基板载体相似。测量过程条件对生产环境的干扰很小。数据从过程状态测量装置转移到用户，而不需要人为干预。版权所有（C）2011，JPO＆INPIT

6. 发明专利

SG11201807420YA ENCAPSULATED INSTRUMENTED SUBSTRATE APPARATUS FOR ACQUIRING MEASUREMENT PARAMETERS IN HIGH TEMPERATURE PROCESS APPLICATIONS 未知
公开(公告)号：SG11201807420YA
公开(公告)日：2018-12-28
申请号：SG11201807420Y
申请日：2017-06-14
申请人： KLA TENCOR CORP
发明人： SUN MEI , JENSEN EARL , ZHOU JING , LIU RAN
IPC分类号： H01L21/66 , H01L21/67
摘要： An apparatus includes an instrumented substrate apparatus, a substrate assembly including a bottom and top substrate mechanically coupled, an electronic assembly, a nested enclosure assembly including an outer and inner enclosure wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses the electronic assembly. An insulating medium between the inner and outer enclosure and a sensor assembly communicatively coupled to the electronic assembly including one or more sensors disposed at one or more locations within the substrate assembly wherein the electronic assembly is configured to receive one or more measurement parameters from the one or more sensors.

7. 发明申请

WO2014194077A3 METHOD AND SYSTEM FOR MEASURING HEAT FLUX 审中-公开
标题翻译：测量热通量的方法和系统
公开(公告)号：WO2014194077A3
公开(公告)日：2015-03-26
申请号：PCT/US2014040002
申请日：2014-05-29
申请人： KLA TENCOR CORP
发明人： SHARRATT STEPHEN , QULI FARHAT , JENSEN EARL , SUN MEI
IPC分类号： G01K17/00
CPC分类号： G01K19/00 , G01K17/00
摘要： A heat flux sensor equipped measurement wafer includes a substrate, a cover thermally coupled to a portion of the substrate, a sensor cavity formed between the substrate and the cover, a thermal barrier disposed within at least a portion of the sensor cavity, a bottom temperature sensor thermally coupled to the substrate and insulated from the cover by a portion of the thermal barrier and a top temperature sensor thermally coupled to the cover and insulated from the substrate by an additional portion of the thermal barrier, wherein a temperature difference between the bottom temperature sensor and the top temperature sensor is related to a heat flux passing through the substrate and cover proximate to the sensor cavity.
摘要翻译：配备有热量传感器的测量晶片包括基板，热耦合到基板的一部分的盖，形成在基板和盖之间的传感器腔，设置在传感器腔的至少一部分内的热障，底部温度传感器热耦合到衬底并且由热屏障的一部分与盖隔离，并且顶部温度传感器热耦合到盖并通过热障的另外部分与衬底绝缘，其中底部温度传感器和顶部温度传感器与通过基板和靠近传感器腔的盖子的热通量有关。

8. 发明申请

WO2013090631A3 FILM THICKNESS MONITOR 审中-公开
标题翻译：电影厚度监视器
公开(公告)号：WO2013090631A3
公开(公告)日：2015-06-04
申请号：PCT/US2012069582
申请日：2012-12-13
申请人： KLA TENCOR CORP
发明人： JENSEN EARL , O'BRIEN KEVIN , QULI FARHAT , SUN MEI
IPC分类号： G01B11/06
CPC分类号： G01B11/06 , G01B9/02051 , G01B11/0625 , G01B11/0641 , G01B11/0675 , G01B11/0683
摘要： Aspects of the present disclosure include methods and apparatuses for measuring the rate of change of the thickness of a material layer in situ. A measurement unit comprising a light source and a photodetector may be formed in a cavity in a substrate. The light source produces light that impinges a material layer and is reflected back to the photodetector. Through methods such as interferometry and ellipsometry, the thickness of the material layer may be calculated from the light intensity data measured by the photodetector. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：本公开的方面包括用于原位测量材料层的厚度变化率的方法和装置。包括光源和光电检测器的测量单元可以形成在基板中的空腔中。光源产生照射材料层并被反射回光电检测器的光。通过诸如干涉测量和椭偏仪的方法，材料层的厚度可以由光电检测器测量的光强度数据计算。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

9. 发明公开

EP2721381A4 WAFER LEVEL SPECTROMETER 审中-公开
标题翻译：光谱仪在晶片级
公开(公告)号：EP2721381A4
公开(公告)日：2015-04-22
申请号：EP12800456
申请日：2012-06-12
申请人： KLA TENCOR CORP
发明人： JENSEN EARL , SUN MEI , O'BRIEN KEVIN
IPC分类号： G01J3/02 , G02B6/122
CPC分类号： G01J3/0259 , G01J1/58 , G01J3/0205 , G01J3/021 , G01J3/0256 , G01J3/0262 , G01J3/36 , G01J2003/1213
摘要： A sensor apparatus for measuring characteristics of optical radiation has a substrate and a low profile spectrally selective detection system located within the substrate at one or more spatially separated locations. The spectrally selective detection system includes a generally laminar array of wavelength selectors optically coupled to a corresponding array of optical detectors. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

10. 发明公开

EP2671246A4 PROCESS CONDITION MEASURING DEVICE (PCMD) AND METHOD FOR MEASURING PROCESS CONDITIONS IN A WORKPI ECE PROCESSING TOOL CONFIGURED TO PROCESS PRODUCTION WORKPIECES 有权
标题翻译：用于测量过程的条件和程序测量工艺条件生产加工之WORKPIECES CONFIGURED工具
公开(公告)号：EP2671246A4
公开(公告)日：2014-11-19
申请号：EP12742613
申请日：2012-01-24
申请人： KLA TENCOR CORP
发明人： SUN MEI , QULI FARHAT , JENSEN EARL , ARLEO PAUL , VISHAL VAIBHAW
IPC分类号： H01L21/67 , G01K17/00
CPC分类号： G01K17/00 , H01L21/67248
摘要： A process condition measuring device (PCMD) may include first and second substrate components. One or more temperature sensors are embedded within each substrate component. The first and second substrate components are sandwiched together such that each temperature sensor in the second substrate component is aligned in tandem with a corresponding temperature sensor located in the first substrate component. Alternatively first and second temperature sensors may be positioned in parallel in the same substrate. Temperature differences may be measured between pairs of corresponding temperature sensors when the PCMD is subjected to process conditions in a workpiece processing tool. Process conditions in the tool may be calculated from the temperature differences.

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