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    • 1. 发明申请
    • METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES
    • 用于提供处理工具可纠正的方法和系统
    • WO2012015967A3
    • 2012-05-24
    • PCT/US2011045603
    • 2011-07-27
    • KLA TENCOR CORPCOHEN GUYKLEIN DANAIZIKSON PAVEL
    • COHEN GUYKLEIN DANAIZIKSON PAVEL
    • H01L21/02H01L21/027H01L21/66
    • G05B19/41875G05B2219/32182Y02P90/22
    • The present invention may include performing a first measurement process on a wafer of a lot of wafers, wherein the first measurement process includes measuring one or more characteristics of a plurality of targets distributed across one or more fields of the wafer, determining a set of process tool correctables for a residual larger than a selected threshold level utilizing a loss function, wherein the loss function is configured to fit a model for one or more process tools, as a function of field position, to one or more of the measured characteristics of the plurality of targets, wherein the set of process tool correctables includes one or more parameters of the model that act to minimize the difference between a norm of the residual and the selected threshold, and utilizing the determined process tool correctables to monitor or adjust one or more processes of the process tools.
    • 本发明可以包括在许多晶片的晶片上执行第一测量过程,其中第一测量过程包括测量分布在晶片的一个或多个场上的多个目标的一个或多个特性,确定一组过程 用于利用损失函数对于大于所选阈值水平的残差的工具可校正,其中,所述损失函数被配置为将一个或多个处理工具的模型作为场位置的函数拟合至所述测量特征中的一个或多个测量特征 多个目标,其中所述一组处理工具可校正包括所述模型的一个或多个参数,所述一个或多个参数用于最小化所述残差的标准与所选阈值之间的差异,并且利用所确定的处理工具可校正来监视或调整一个或多个 流程工具的流程。
    • 2. 发明申请
    • METHOD AND SYSTEM FOR PROVIDING TOOL INDUCED SHIFT USING A SUB-SAMPLING SCHEME
    • 使用子采样方案提供工具感应移位的方法和系统
    • WO2012044702A2
    • 2012-04-05
    • PCT/US2011053743
    • 2011-09-28
    • KLA TENCOR CORPIZIKSON PAVELCOHEN GUY
    • IZIKSON PAVELCOHEN GUY
    • H01L21/66
    • G03F7/70616
    • The present invention may include measuring tool induced shift (TIS) on at least one wafer of a lot of wafers via an omniscient sampling process, randomly generating a plurality of sub-sampling schemes, each of the set of randomly generated sub-sampling schemes having the same number of sampled fields, measuring TIS at each location of each of the randomly generated sub-sampling schemes, approximating a set of TIS values for each of the randomly generated sub-sampling schemes utilizing the TIS measurements from each of the randomly generated sub-sampling schemes, wherein each set of TIS values for each of the randomly generated sub-sampling schemes is calculated utilizing an interpolation process configured to approximate a TIS value for each location not included in a randomly generated sub-sampling scheme, and determining a selected sub-sampling scheme by comparing each of the calculated sets of TIS values to the measured TIS of the omniscient sampling process.
    • 本发明可以包括通过无所不在的采样过程在许多晶片的至少一个晶片上测量工具诱发偏移(TIS),随机产生多个子采样方案,所述随机生成的子采样方案中的每一个具有 相同数量的采样场,测量每个随机生成的子采样方案的每个位置处的TIS,利用来自随机生成的子单元中的每一个的TIS测量来近似每个随机生成的子采样方案的一组TIS值 采样方案,其中使用内插过程来计算随机生成的子采样方案中的每一个的每组TIS值,所述内插处理被配置为对未包括在随机生成的子采样方案中的每个位置近似TIS值,并且确定所选择的 通过将每个计算出的TIS值集合与全向采样过程的测量TIS进行比较,进行子采样方案。
    • 4. 发明申请
    • MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS
    • 多层叠加计量目标和综合覆盖度量度测量系统
    • WO2012018673A3
    • 2012-05-18
    • PCT/US2011045778
    • 2011-07-28
    • KLA TENCOR CORPKANDEL DANIELLEVINSKI VLADIMIRCOHEN GUY
    • KANDEL DANIELLEVINSKI VLADIMIRCOHEN GUY
    • H01L21/027
    • G03F7/70633G03F7/70683
    • A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.
    • 公开了一种用于基于成像的计量学的多层覆盖目标。 覆盖目标包括包括三个或更多个目标结构的多个目标结构,每个目标结构包括一组两个或多个模式元素,其中目标结构被配置为在目标结构对准时共享公共对称中心,每个目标结构 目标结构相对于公共对称中心不变为N度旋转,其中N等于或大于180度,其中两个或更多个图案元素中的每一个具有单独的对称中心,其中两个或更多个图案 每个目标结构的元素对于单个对称中心的M度旋转是不变的,其中M等于或大于180度。
    • 5. 发明公开
    • 다층 오버레이 계측 타겟 및 상보적 오버레이 계측 측정 시스템
    • 多层覆盖计量目标和免费覆盖计量测量系统
    • KR20180026582A
    • 2018-03-12
    • KR20187006323
    • 2011-07-28
    • KLA TENCOR CORP
    • KANDEL DANIELLEVINSKI VLADIMIRCOHEN GUY
    • H01L21/027G03F7/20
    • G03F7/70633G03F7/70683
    • 촬상기반계측에서사용하기위한다층오버레이타겟이개시된다. 오버레이타겟은 3개이상의타겟구조물을포함한복수의타겟구조물을포함하고, 각타겟구조물은 2개이상의패턴요소들의집합을포함하며, 타겟구조물은타겟구조물의정렬시에공통대칭중심을공유하도록구성되고, 각타겟구조물은공통대칭중심에대한 N도(N도는 180도이상임) 회전에대하여불변체이며, 2개이상의패턴요소는각각개별적인대칭중심을갖고, 각타겟구조물의 2개이상의패턴요소들은각각개별적인대칭중심에대한 M도(M도는 180도이상임) 회전에대하여불변체이다.
    • 公开了用于基于成像的度量衡中的多层覆盖目标。 覆盖目标包括多个包括三个或更多个目标结构的目标结构,每个目标结构包括一组两个或更多个模式元素,其中目标结构被配置为在目标结构对齐时共享对称的共同中心,每个 目标结构围绕所述公共对称中心不变为N度旋转,其中N等于或大于180度,其中所述两个或更多个图案元件中的每一个具有单独的对称中心,其中所述两个或更多个图案中的每一个 每个目标结构的元素对于围绕单个对称中心的M度旋转是不变的,其中M等于或大于180度。
    • 8. 发明公开
    • MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS
    • MEHRSCHICHTIGESÜBERLAPPUNGSMETROLOGIE-ZIEL UND ENTSPRECHENDEÜBERLAPPUNGSMETROLOGIE-MESSSYSTEME
    • EP2601675A4
    • 2017-08-23
    • EP11815104
    • 2011-07-28
    • KLA-TENCOR CORP
    • KANDEL DANIELLEVINSKI VLADIMIRCOHEN GUY
    • H01L21/027
    • G03F7/70633G03F7/70683
    • A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.
    • 公开了用于基于成像的度量衡中的多层覆盖目标。 覆盖目标包括多个包括三个或更多个目标结构的目标结构,每个目标结构包括一组两个或更多个模式元素,其中目标结构被配置为在目标结构对齐时共享对称的共同中心,每个 目标结构围绕所述公共对称中心不变为N度旋转,其中N等于或大于180度,其中所述两个或更多个图案元件中的每一个具有单独的对称中心,其中所述两个或更多个图案中的每一个 每个目标结构的元素对于围绕单个对称中心的M度旋转是不变的,其中M等于或大于180度。