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1. 发明专利

SG11201703585RA ANALYZING AND UTILIZING LANDSCAPES 未知
公开(公告)号：SG11201703585RA
公开(公告)日：2017-06-29
申请号：SG11201703585R
申请日：2015-11-24
申请人： KLA TENCOR CORP
发明人： MARCIANO TAL , BRINGOLTZ BARAK , GUREVICH EVGENI , ADAM IDO , LINDENFELD ZA'EV , ZHAO ZENG , FELER YOEL , KANDEL DANIEL , CARMEL NADAV , MANASSEN AMNON , AMIR NURIEL , KAMINSKY ODED , YAZIV TAL , ZAHARAN OFER , COOPER MOSHE , SULIMARSKI ROEE , LEVIANT TOM , SELLA NOGA , EFRATY BORIS , SALTOUN LILACH , HANDELMAN AMIR , ASHWAL ELTSAFON , BACHAR OHAD
IPC分类号： H01L21/66
摘要： Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.

2. 发明专利

SG2014008841A OVERLAY TARGETS WITH ORTHOGONAL UNDERLAYER DUMMYFILL 未知
公开(公告)号：SG2014008841A
公开(公告)日：2015-01-29
申请号：SG2014008841
申请日：2013-05-21
申请人： KLA TENCOR CORP
发明人： AMIR NURIEL , COHEN GUY , LEVINSKI VLADIMIR , ADEL MICHAEL
IPC分类号： H01L21/027 , G03F1/42
摘要： The disclosure is directed to designing and using an overlay target with orthogonal underlayer dummyfill. According to various embodiments, an overlay target may include one or more segmented overlay pattern elements forming at least one overlay target structure. The overlay target may further include one or more inactive pattern elements forming at least one dummyfill target structure. Each of the one or more inactive pattern elements may include dummyfill segmented along an axis orthogonal to a segmentation axis of at least one proximately disposed overlay pattern element. In some embodiments, each of the target structures or layers may be formed from a separate process layer successively disposed upon a substrate, such as a silicon wafer. In some embodiments, the overlay and dummyfill target structures may be twofold or fourfold rotationally symmetric to allow for certain manufacturing or metrology advantages.

3. 发明专利

SG10201804964TA TARGET AND PROCESS SENSITIVITY ANALYSIS TO REQUIREMENTS 未知
公开(公告)号：SG10201804964TA
公开(公告)日：2018-07-30
申请号：SG10201804964T
申请日：2014-12-10
申请人： KLA TENCOR CORP
发明人： ADEL MICHAEL E , AMIR NURIEL , GHINOVKER MARK , SHUSTERMAN TAL , GREADY DAVID , BORODYANSKY SERGEY
摘要： PROCESS PARAMETERS 110-, \ INPUT MODULE CURRENT LAYER (SIMULATION OR DATA) PREVIOUS LAYER {SIMULATION OR DATA) WAFER PRODUCER 49 - \"\" OR TARGET DESIGNER 94- 1 TARGET PARAMETERS 96-. P ETROLOGY CONDITIDNS 4 h\"NRESHOLD 132 ,>c •1 2 92 P I40, TARGET OPI1MIZATION MODULE ORMAICF MORN i -129 7 123-- UROLOGY METMCS MODULE P 124-z- METROLOGY NEIRCS PROCESS ERIC'S 13°- \ SENSITNITY ANALYSIS MODULE 11 \ 20 \ - tRAW DATA METROLOGY SIMUALTION 78. \"\ t COARSE TARGET FILTDRING ure 1 TARGET AND PROCESS SENSITIVITY ANALYSIS TO REQUIREMENTS . Systems and method are provided for analyzing target, process and metrology configuration sensitivities to a wide range of parameters, according to external requirements or inner development and verification neals. Systems comprise the follow- ing elements. An input module is arranged to receive parameters relating to targets, target metrology conditions and production pro- cesses, to generate target data. A metrology simulation unit is arranged to simulate metrology measurements of targets from the tar- get data and to generate multiple metrics that quantify the simulated target measurements. A sensitivity analysis module is arranged to derive functional dependencies of the metrics on the parameters and to define required uncertainties of the parameters with respect to the derived functional dependencies. Finally, a target optimization module is arranged to rank targets and target metrology condi- tions with respect to the simulated target measurements. 90, 25

4. 发明专利

SG11201708135YA FEED FORWARD OF METROLOGY DATA IN A METROLOGY SYSTEM 未知
公开(公告)号：SG11201708135YA
公开(公告)日：2017-11-29
申请号：SG11201708135Y
申请日：2016-04-05
申请人： KLA TENCOR CORP
发明人： LEVY ADY , KANDEL DANIEL , ADEL MICHAEL E , POSLAVSKY LEONID , ROBINSON JOHN , MARCIANO TAL , BRINGOLTZ BARAK , GRUNZWEIG TZAHI , KLEIN DANA , ITZKOVICH TAL , CARMEL NADAV , AMIR NURIEL , RAMANATHAN VIDYA , CAMP JANAY , WAGNER MARK
IPC分类号： H01L21/66 , G01N21/95
摘要： A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.

5. 发明公开

EP3126893A4 FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY 审中-实审
标题翻译： FOKUSMESSUNGEN MIT SCATTEROMETRIE
公开(公告)号：EP3126893A4
公开(公告)日：2017-10-04
申请号：EP15774184
申请日：2015-03-30
申请人： KLA-TENCOR CORP
发明人： EL KODADI MOHAMMED , AMIR NURIEL , VOLKOVICH ROIE , LEVINSKI VLADIMIR , FELER YOEL , KANDEL DANIEL , GUTMAN NADAV , PANDEV STILIAN , SANKO DZMITRY
IPC分类号： G02B15/14 , G01N21/47 , G03F7/20 , G06F17/50 , H04N7/18
CPC分类号： G06F17/5081 , G01N21/4785 , G03F7/70641 , G03F7/70683 , G06F17/5072
摘要： Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.
摘要翻译：提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元素的周期性结构。元件沿着垂直于第一方向的第二方向以第二节距周期性地定向，并且在第二方向上通过具有第二节距的交替的聚焦敏感和聚焦不敏感的图案来表征。在产生的目标中，第一间距可以是大约设备间距，并且第二间距可以大几倍。可以产生第一焦点不敏感图案以产生第一临界尺寸，并且可以产生第二焦点敏感图案以产生仅当满足特定焦点要求时可以等于第一临界尺寸的第二临界尺寸，或基于沿着垂直方向的较长节距提供零级散射测量以及第一衍射级。

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