专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO03003375A3 APPARATUS AND METHODS FOR MONITORING SELF-ALIGNED CONTACT ARRAYS 审中-公开
标题翻译：用于监测自对准接触阵列的装置和方法
公开(公告)号：WO03003375A3
公开(公告)日：2003-08-21
申请号：PCT/US0220205
申请日：2002-06-25
申请人： KLA TENCOR CORP
发明人： WEINER KURT H , NUNAN PETER D , TANDON SANJAY
IPC分类号： G01R31/28 , G01R31/307 , H01L21/66
CPC分类号： G01R31/2831 , G01R31/307
摘要： Disclosed are methods and apparatus for detecting defects in a partially fabricated semiconductor device with self-aligned contacts. The self-aligned contacts are formed from a first layer with a plurality of contact portions (404), a second layer with a plurality of conductive lines (402) that are each aligned proximate to an associated underlying contact portion (404), and a third insulating layer (406) formed over the conductive lines (402) and their proximate underlying contact portions (404). The third insulating layer (406) has a plurality of vias formed therein that are each formed alongside a one of the conductive lines (402) and over its proximate underlying contact portion (404). A charged particle beam is scanned over a portion of the vias to form a voltage contrast image of each via. When a minority of the vias in the image have a significantly different brightness level than a majority of the vias, it is then determined that the minority of vias have defects.
摘要翻译：公开了用于检测具有自对准触点的部分制造的半导体器件中的缺陷的方法和装置。自对准触点由具有多个接触部分（404）的第一层形成，具有多个导线（402）的第二层，每个导电线路邻近相关联的下面的接触部分（404）对准，并且第三绝缘层（406）形成在导电线（402）及其邻近的下面的接触部分（404）之上。第三绝缘层（406）具有形成在其中的多个通孔，每个通孔沿着导电线（402）中的一条并在其邻近的下面的接触部分（404）上形成。在通孔的一部分上扫描带电粒子束以形成每个通孔的电压对比图像。当图像中的少数通孔具有与大多数通孔相比明显不同的亮度时，则确定少数通孔具有缺陷。

IPRDB

热门服务

关于我们

友情链接

联系方式