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    • 3. 发明申请
    • METHODS AND SYSTEMS FOR IMPROVED LOCALIZED FEATURE QUANTIFICATION IN SURFACE METROLOGY TOOLS
    • 用于改进表面计量学工具中局部化特征量化的方法和系统
    • WO2012094421A3
    • 2012-10-26
    • PCT/US2012020225
    • 2012-01-04
    • KLA TENCOR CORPCHEN HAIGUANGSINHA JAYDEEPTANG SHUOHONGHAGER JOHNZENG ANDREWKAMENSKY SERGEY
    • CHEN HAIGUANGSINHA JAYDEEPTANG SHUOHONGHAGER JOHNZENG ANDREWKAMENSKY SERGEY
    • H01L21/66
    • G06T5/002G06T5/20G06T7/0004G06T2207/30148
    • A method for enabling more accurate measurements of localized features on wafers is disclosed. The method includes: a) performing high order surface fitting to more effectively remove the low frequency shape components and also to reduce possible signal attenuations commonly observed from filtering; b) constructing and applying a proper two dimensional LFM window to the residual image from the surface fitting processing stage to effectively reduce the residual artifacts at the region boundaries; c) calculating the metrics of the region using the artifact-reduced image to obtain more accurate and reliable measurements; and d) using site-based metrics obtained from front and back surface data to quantify the features of interest. A method for filtering data from measurements of localized features on wafers is disclosed. This method includes an algorithm designed to adjust the filtering behavior according to the statistics of extreme data samples. A method for utilizing the 2D window and the data filtering to yield a more robust and more accurate Localized Feature quantification methodology is disclosed.
    • 公开了一种用于实现对晶片上的局部化特征的更准确测量的方法。 该方法包括:a)执行高阶表面拟合以更有效地去除低频形状分量并且还减少通常从滤波观察到的可能的信号衰减; b)对来自表面拟合处理阶段的残差图像构建和应用适当的二维LFM窗口,以有效减少区域边界处的残留伪影; c)使用伪像减少的图像计算区域的度量以获得更准确和可靠的测量; 和d)使用从正面和背面数据获得的基于场地的度量来量化感兴趣的特征。 公开了一种用于从晶片上的局部特征的测量中过滤数据的方法。 该方法包括一个算法,设计用于根据极端数据样本的统计数据调整过滤行为。 公开了一种用于利用2D窗口和数据过滤来产生更健壮和更准确的局部特征量化方法的方法。
    • 4. 发明申请
    • IN-SITU END POINT DETECTION FOR SEMICONDUCTOR WAFER POLISHING
    • 用于半导体波形抛光的现场端点检测
    • WO03003422A3
    • 2003-02-27
    • PCT/US0220765
    • 2002-06-27
    • KLA TENCOR CORP
    • CHEN HAIGUANGLEE SHING
    • B24B37/013B24B49/12H01L21/00B24B49/00B24B51/00G01R31/26
    • B24B37/013B24B49/12
    • The present invention relates to in-situ techniques for determining process end points in semiconductor wafer polishing processes. Generally, the technique involves utilizing a scanning inspection machine having multiple pair of lasers and sensors located at different angles for detecting signals caused to emanate from an inspected specimen. The detection techniques determine the end points by differentiating between various material properties within a wafer. An accompanying algorithm is used to obtain an end point detection curve (608) that represents a composite representation of the signals obtained from each of the detectors of the inspection machine. This end point detection curve (608) is then used to determine the process end point (614). Note that computation of the algorithm (610, 612) is performed during the polishing process so that the process end point can be determined without interruptions that diminish process throughputs.
    • 本发明涉及用于确定半导体晶片抛光工艺中的工艺终点的现场技术。 通常,该技术涉及利用具有多对激光器和位于不同角度的传感器的扫描检查机,以检测从检查样品发出的信号。 检测技术通过区分晶片内的各种材料特性来确定端点。 使用伴随的算法来获得终点检测曲线(608),其表示从检查机的每个检测器获得的信号的复合表示。 然后,该终点检测曲线(608)用于确定过程终点(614)。 注意,在抛光过程期间执行算法(610,612)的计算,使得可以确定处理结束点而不会导致处理吞吐量减少的中断。