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    • 2. 发明专利
    • MITIGATION OF INACCURACIES RELATED TO GRATING ASYMMETRIES IN SCATTEROMETRY MEASUREMENTS
    • SG11201906424WA
    • 2019-08-27
    • SG11201906424W
    • 2017-12-15
    • KLA TENCOR CORP
    • ADAM IDOLEVINSKI VLADIMIRMANASSEN AMNONLUBASHEVSKY YUVAL
    • H01L21/66G03F7/20
    • COARSEPITCH COARSE PITCH OFFSET+f j.. 4 HEIGHT 80A- \ CELL 1 868 DIFFRACTION COEFFICIENTS r + AND r - 81 80 86A 81 DIFFRACTION COEFFICIENTS r+ AND r' 82 878 87A 82 1-1 cc N 00 O C (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 16 August 2018 (16.08.2018) WIPO I PCT ill mu °million °nolo DID Ho oimIE (10) International Publication Number WO 2018/147938 Al (51) International Patent Classification: GO3F 7/20 (2006.01) H01L 21/66 (2006.01) (21) International Application Number: PCT/US2017/066853 (22) International Filing Date: 15 December 2017 (15.12.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 62/457,787 10 February 2017 (10.02.2017) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Dept., One Technology Drive, Milpitas, CA 95035 (US). (72) Inventors: ADAM, Ido; Nehar Hayarden 21, 55450 Qiriat Ono (IL). LEVINSKI, Vladimir; Hermon 9, 23100 Migdal HaEmek (IL). MANASSEN, Amnon; 10 Golda Meir, 34892 Haifa (IL). LUBASHEVSKY, Yuval; 22 Smolen- skin St., 3436606 Haifa (IL). (74) Agent: MCANDREWS, Kevin et al.; KLA-Tencor Corpo- ration, Legal Dept., One Technology Drive, Milpitas, CA 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, (54) Title: MITIGATION OF INACCURACIES RELATED TO GRATING ASYMMETRIES IN SCATTEROMETRY MEASURE- MENTS Figure 1 (57) : Scatterometry overlay targets as well as target design and measurement methods are provided, which mitigate the effects of grating asymmetries in diffraction based overlay measurements. Targets comprise additional cells with sub-resolved structures replacing resolved coarse pitch gratings and/or comprise alternating sub-resolved structures with coarse pitch periodicity - to isolate and remove inaccuracies that result from grating asymmetries. Measurement methods utilize orthogonally polarized illumination to isolate the grating asymmetry effects in different measurement directions, with respect to the designed target structures. [Continued on next page] WO 2018/147938 Al MIDEDIMOMMIONERIOMMIMMIEDIOMMOVOIMIE UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
    • 7. 发明申请
    • SCATTEROMETRY METROLOGY TARGET DESIGN OPTIMIZATION
    • 计量测量学目标设计优化
    • WO2010080732A3
    • 2010-10-07
    • PCT/US2010020046
    • 2010-01-04
    • KLA TENCOR CORPADEL MICHAEL EMANASSEN AMNONKANDEL DANIEL
    • ADEL MICHAEL EMANASSEN AMNONKANDEL DANIEL
    • H01L21/66
    • G03F7/70683G03F7/705G03F7/70633H01L22/12
    • A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized.
    • 度量目标设计可以使用包括度量衡目标设计信息,衬底信息,过程信息和度量衡系统信息的输入来优化。 采用计量系统采集计量信号可以使用输入来建模以产生计量目标的一个或多个光学特性。 计量算法可以应用于特征以确定由计量系统制造的计量目标的测量的预测精度和精度。 与计量目标设计有关的部分信息可能会被修改,信号建模和计量算法可能会重复,以优化一个或多个测量的准确度和精确度。 计量目标设计可以在精确度和精度得到优化之后显示或存储。