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1. 发明申请

US20170170387A1 MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
公开(公告)号：US20170170387A1
公开(公告)日：2017-06-15
申请号：US15339064
申请日：2016-10-31
申请人： KI WOONG KIM , JUHYUN KIM , YONG SUNG PARK , SECHUNG OH , JOONMYOUNG LEE , WOO CHANG LIM
发明人： KI WOONG KIM , JUHYUN KIM , YONG SUNG PARK , SECHUNG OH , JOONMYOUNG LEE , WOO CHANG LIM
IPC分类号： H01L43/02 , G11C11/16 , H01L43/12 , H01L27/22 , H01L43/08 , H01L43/10
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1655 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic memory device and a method of fabricating the same are provided. The method includes forming a first magnetic layer on a substrate, forming a tunnel barrier layer on the first magnetic layer, and forming a second magnetic layer on the tunnel barrier layer. The forming of the tunnel barrier layer includes forming a first metal oxide layer on the first magnetic layer, forming a first metal layer on the first metal oxide layer, forming a second metal oxide layer on the first metal layer, and performing a first thermal treatment process to oxidize at least a portion of the first metal layer.

2. 发明申请

US20150035095A1 MAGNETIC MEMORY DEVICES HAVING A PERPENDICULAR MAGNETIC TUNNEL JUNCTION 有权
标题翻译：磁性记忆装置具有一个贯穿磁性的隧道结
公开(公告)号：US20150035095A1
公开(公告)日：2015-02-05
申请号：US14264049
申请日：2014-04-28
申请人： WOOJIN KIM , KI WOONG KIM , WOO CHANG LIM
发明人： WOOJIN KIM , KI WOONG KIM , WOO CHANG LIM
IPC分类号： H01L43/02
CPC分类号： H01L27/222 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3286 , H01L27/224 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer. The first free layer may be provided between the second free layer and the tunnel barrier. A thickness of the first free layer may be greater than a first maximum anisotropy thickness, being the thickness at which the first free layer has maximum perpendicular anisotropy. A thickness of the second free layer may be smaller than a second maximum anisotropy thickness, being the thickness at which the second free layer has maximum perpendicular anisotropy. A magnetic tunnel junction having two free layers with different thicknesses can enable a magnetic memory device that has increased MR ratio and reduced switching current.
摘要翻译：磁存储器件可以包括通过隧道势垒彼此分离的自由磁结构和参考磁性结构。自由磁结构可以包括交换耦合层，以及通过交换耦合层彼此分离的第一和第二自由层。第一自由层可以设置在第二自由层和隧道势垒之间。第一自由层的厚度可以大于第一最大各向异性厚度，即第一自由层具有最大垂直各向异性的厚度。第二自由层的厚度可以小于第二最大各向异性厚度，即第二自由层具有最大垂直各向异性的厚度。具有两个具有不同厚度的自由层的磁性隧道结可实现具有增加的MR比和降低的开关电流的磁存储器件。

3. 发明申请

US20140339504A1 MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US20140339504A1
公开(公告)日：2014-11-20
申请号：US14264017
申请日：2014-04-28
申请人： KYOUNGSUN KIM , WOOJIN KIM , WOO CHANG LIM
发明人： KYOUNGSUN KIM , WOOJIN KIM , WOO CHANG LIM
IPC分类号： H01L43/12 , H01L43/02
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： A magnetic memory device and method of manufacturing the same are provided. The magnetic memory device can include a first vertical magnetic pattern on a substrate, a second vertical magnetic pattern on the first vertical magnetic pattern, and a tunnel barrier pattern disposed between the first vertical magnetic pattern and the second vertical magnetic pattern. The first vertical magnetic pattern can include a first pattern on the substrate, a second pattern on the first pattern, and an exchange coupling pattern between the first pattern and the second pattern. The first pattern can comprise an amorphous magnetic substance and a component comprising at least one of platinum, palladium, and nickel.
摘要翻译：提供一种磁存储器件及其制造方法。磁存储器件可以包括衬底上的第一垂直磁图案，第一垂直磁图案上的第二垂直磁图案，以及设置在第一垂直磁图案和第二垂直磁图案之间的隧道势垒图案。第一垂直磁图案可以包括基板上的第一图案，第一图案上的第二图案，以及第一图案和第二图案之间的交换耦合图案。第一图案可以包括非晶磁性物质和包含铂，钯和镍中的至少一种的成分。

4. 发明申请

US20140061828A1 MAGNETIC MEMORY DEVICES 有权
标题翻译：磁记忆装置
公开(公告)号：US20140061828A1
公开(公告)日：2014-03-06
申请号：US13967340
申请日：2013-08-14
申请人： WOO CHANG LIM , SANGYONG KIM , Whankyun KIM , SANG HWAN PARK , JEONGHEON PARK
发明人： WOO CHANG LIM , SANGYONG KIM , Whankyun KIM , SANG HWAN PARK , JEONGHEON PARK
IPC分类号： H01L43/08
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659
摘要： A magnetic memory device according to embodiments includes a first reference magnetic layer on a substrate, a second reference magnetic layer on the first reference magnetic layer, a free layer between the first reference magnetic layer and the second reference magnetic layer, a first tunnel barrier layer between the first reference magnetic layer and the free layer, and a second tunnel barrier layer between the second reference magnetic layer and the free layer. The first reference magnetic, second reference magnetic and free layers each have a magnetization direction substantially perpendicular to a top surface of the substrate. A resistance-area product (RA) value of the first tunnel barrier layer is greater than that of the second tunnel barrier layer.
摘要翻译：根据实施例的磁存储器件包括衬底上的第一参考磁性层，第一参考磁性层上的第二参考磁性层，第一参考磁性层和第二参考磁性层之间的自由层，第一隧道势垒层在第一参考磁性层和自由层之间，以及在第二参考磁性层和自由层之间的第二隧道势垒层。第一参考磁性，第二参考磁性和自由层各自具有基本上垂直于衬底顶表面的磁化方向。第一隧道势垒层的电阻面积乘积（RA）值大于第二隧道势垒层的电阻面积积（RA）值。

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