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1. 发明申请

US20140061828A1 MAGNETIC MEMORY DEVICES 有权
标题翻译：磁记忆装置
公开(公告)号：US20140061828A1
公开(公告)日：2014-03-06
申请号：US13967340
申请日：2013-08-14
申请人： WOO CHANG LIM , SANGYONG KIM , Whankyun KIM , SANG HWAN PARK , JEONGHEON PARK
发明人： WOO CHANG LIM , SANGYONG KIM , Whankyun KIM , SANG HWAN PARK , JEONGHEON PARK
IPC分类号： H01L43/08
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659
摘要： A magnetic memory device according to embodiments includes a first reference magnetic layer on a substrate, a second reference magnetic layer on the first reference magnetic layer, a free layer between the first reference magnetic layer and the second reference magnetic layer, a first tunnel barrier layer between the first reference magnetic layer and the free layer, and a second tunnel barrier layer between the second reference magnetic layer and the free layer. The first reference magnetic, second reference magnetic and free layers each have a magnetization direction substantially perpendicular to a top surface of the substrate. A resistance-area product (RA) value of the first tunnel barrier layer is greater than that of the second tunnel barrier layer.
摘要翻译：根据实施例的磁存储器件包括衬底上的第一参考磁性层，第一参考磁性层上的第二参考磁性层，第一参考磁性层和第二参考磁性层之间的自由层，第一隧道势垒层在第一参考磁性层和自由层之间，以及在第二参考磁性层和自由层之间的第二隧道势垒层。第一参考磁性，第二参考磁性和自由层各自具有基本上垂直于衬底顶表面的磁化方向。第一隧道势垒层的电阻面积乘积（RA）值大于第二隧道势垒层的电阻面积积（RA）值。

2. 发明申请

US20150228321A1 MAGNETIC MEMORY DEVICES 有权
标题翻译：磁记忆装置
公开(公告)号：US20150228321A1
公开(公告)日：2015-08-13
申请号：US14526489
申请日：2014-10-28
申请人： KILHO LEE , SANGYONG KIM , WOOJIN KIM , KyungTae NAM
发明人： KILHO LEE , SANGYONG KIM , WOOJIN KIM , KyungTae NAM
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/221
摘要： A magnetic memory device is provided. The magnetic memory device includes a plurality of variable resistance devices connected to a word line, and a plurality of bit lines, each of which provides an electrical pathway between a corresponding one of the variable resistance devices and a read and write circuit. Each of the variable resistance devices includes a free layer and a pinned layer spaced apart from each other and having a tunnel barrier interposed therebetween, an assistant layer spaced apart from the tunnel barrier and having the free layer interposed therebetween, and an exchange coupling layer arranged between the free layer and the assistant layer. The exchange coupling layer has an electric polarization, which results from its ferroelectric property, and having a direction that can be changed by a voltage applied to the corresponding one of the bit lines.
摘要翻译：提供磁存储器件。磁存储器件包括连接到字线的多个可变电阻器件和多个位线，每个位线提供相应的一个可变电阻器件与读写电路之间的电路径。每个可变电阻装置包括自由层和钉扎层，彼此间隔开并具有插入其间的隧道势垒，辅助层与隧道势垒间隔开并且具有插入其间的自由层，并且布置有交换耦合层在自由层和辅助层之间。交换耦合层具有由其铁电性质产生的电极化，并且具有可以通过施加到相应的一个位线的电压而改变的方向。

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