专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110147819A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110147819A1
公开(公告)日：2011-06-23
申请号：US13034698
申请日：2011-02-24
申请人： KAZUYOSHI SHIBA , YASUSHI OKA
发明人： KAZUYOSHI SHIBA , YASUSHI OKA
IPC分类号： H01L29/788
CPC分类号： H01L27/11558 , G11C16/0441 , H01L27/0207 , H01L27/0629 , H01L27/105 , H01L27/11519 , H01L27/11521 , H01L27/11526
摘要： p-type wells are provided within an n-type embedded well of a semiconductor substrate lying in an area for forming a flash memory, in a state of being isolated from one another. A capacitance section, a data write/erase charge injection/discharge section and a data read MIS•FET are disposed in each of the p-type wells. The capacitance section is disposed between the data write/erase charge injection/discharge section and the data read MIS•FET. In the data write/erase charge injection/discharge section, writing and erasing of data by an FN tunnel current at a channel entire surface are performed.
摘要翻译： p型阱设置在位于形成闪存的区域中的半导体衬底的n型嵌入阱中，处于彼此隔离的状态。电容部分，数据写入/擦除电荷注入/放电部分和数据读取MIS·FET被设置在每个p型阱中。电容部分设置在数据写入/擦除电荷注入/放电部分和数据读取MIS•FET之间。在数据写入/擦除电荷注入/放电部分中，执行通道整个表面处的FN隧道电流的数据写入和擦除。

2. 发明申请

US20100219458A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100219458A1
公开(公告)日：2010-09-02
申请号：US12771673
申请日：2010-04-30
申请人： KAZUYOSHI SHIBA , Hideyuki Yashima
发明人： KAZUYOSHI SHIBA , Hideyuki Yashima
IPC分类号： H01L27/105 , H01L29/788
CPC分类号： H01L27/11546 , H01L27/105 , H01L27/11526 , H01L29/66825 , H01L29/7833 , H01L29/7883
摘要： The data retention characteristics of a nonvolatile memory circuit are improved. In a memory cell array on a main surface of a semiconductor substrate, a floating gate electrode for accumulating charges for information is arranged. The floating gate electrode is covered with a cap insulating film and a pattern of an insulating film 4a formed thereon. Further, over the entire main surface of the semiconductor substrate, an insulating film 2a is deposited so that it covers the pattern of the insulating film 4a and a gate electrode. The insulating film 2a is formed by a silicon nitride film formed by the plasma CVD method. The insulating film 4a is formed by a silicon nitride film formed by the low-pressure CVD method. By the provision of such an insulating film 4a, it is possible to suppress or prevent water or hydrogen ions from diffusing to the floating gate electrode, and therefore, the data retention characteristics of a flash memory can be improved.
摘要翻译：提高了非易失性存储器电路的数据保持特性。在半导体衬底的主表面上的存储单元阵列中，布置用于累积信息电荷的浮栅电极。浮栅电极覆盖有帽绝缘膜和形成在其上的绝缘膜4a的图案。此外，在半导体基板的整个主表面上沉积绝缘膜2a，以覆盖绝缘膜4a和栅电极的图案。绝缘膜2a由通过等离子体CVD法形成的氮化硅膜形成。绝缘膜4a由通过低压CVD法形成的氮化硅膜形成。通过设置这样的绝缘膜4a，可以抑制或防止水或氢离子扩散到浮栅电极，因此可以提高闪存的数据保持特性。

3. 发明申请

US20110272757A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110272757A1
公开(公告)日：2011-11-10
申请号：US13186466
申请日：2011-07-19
申请人： KAZUYOSHI SHIBA
发明人： KAZUYOSHI SHIBA
IPC分类号： H01L29/792
CPC分类号： H01L27/11573 , H01L27/11568 , H01L29/40117 , H01L29/4234
摘要： To improve characteristics of a semiconductor device having a nonvolatile memory.There is provided a semiconductor device having a nonvolatile memory cell that performs memory operations by transferring a charge to/from a charge storage film, wherein the nonvolatile memory cell includes a p well formed in a principal plane of a silicon substrate, and a memory gate electrode formed over the principal plane across the charge storage film, and wherein a memory channel region located beneath the charge storage film of the principal plane of the silicon substrate contains fluorine.
摘要翻译：为了改善具有非易失性存储器的半导体器件的特性。提供了一种具有非易失性存储单元的半导体器件，其通过向电荷存储膜转移电荷而进行存储操作，其中非易失性存储单元包括在硅衬底的主平面上形成的非易失性存储单元，以及存储栅电极形成在电荷储存膜上的主平面上，并且其中位于硅衬底的主平面的电荷存储膜下方的存储通道区域含有氟。

4. 发明申请

US20090093096A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090093096A1
公开(公告)日：2009-04-09
申请号：US12330637
申请日：2008-12-09
申请人： KAZUYOSHI SHIBA
发明人： KAZUYOSHI SHIBA
IPC分类号： H01L21/8239 , H01L21/28 , H01L21/02 , H01L21/336
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/3185 , H01L27/0629 , H01L27/105 , H01L27/1052 , H01L27/115 , H01L27/11526 , H01L27/11546 , H01L29/665 , H01L29/7833
摘要： To provide a nonvolatile memory having an excellent data holding property and a technique for manufacturing the memory, a polycrystalline silicon film 7 and an insulating film 8 are sequentially stacked on a gate insulating film 6, then the polycrystalline silicon film 7 and the insulating film 8 are patterned to form gate electrodes 7A, 7B, and then sidewall spacers 12 including a silicon oxide film are formed on sidewalls of the gate electrodes 7A, 7B. After that, a silicon nitride film 19 is deposited on a substrate 1 by a plasma enhanced CVD process so that the gate electrodes 7A, 7B are not directly contacted to the silicon nitride film 19.
摘要翻译：为了提供具有优异的数据保持特性的非易失性存储器和用于制造存储器的技术，多晶硅膜7和绝缘膜8依次层叠在栅绝缘膜6上，然后将多晶硅膜7和绝缘膜8 被图案化以形成栅电极7A，7B，然后在栅电极7A，7B的侧壁上形成包括氧化硅膜的侧壁间隔物12。之后，通过等离子体增强CVD工艺将氮化硅膜19沉积在衬底1上，使得栅电极7A，7B不直接接触氮化硅膜19。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式