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    • 2. 发明申请
    • SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20100219458A1
    • 2010-09-02
    • US12771673
    • 2010-04-30
    • KAZUYOSHI SHIBAHideyuki Yashima
    • KAZUYOSHI SHIBAHideyuki Yashima
    • H01L27/105H01L29/788
    • H01L27/11546H01L27/105H01L27/11526H01L29/66825H01L29/7833H01L29/7883
    • The data retention characteristics of a nonvolatile memory circuit are improved. In a memory cell array on a main surface of a semiconductor substrate, a floating gate electrode for accumulating charges for information is arranged. The floating gate electrode is covered with a cap insulating film and a pattern of an insulating film 4a formed thereon. Further, over the entire main surface of the semiconductor substrate, an insulating film 2a is deposited so that it covers the pattern of the insulating film 4a and a gate electrode. The insulating film 2a is formed by a silicon nitride film formed by the plasma CVD method. The insulating film 4a is formed by a silicon nitride film formed by the low-pressure CVD method. By the provision of such an insulating film 4a, it is possible to suppress or prevent water or hydrogen ions from diffusing to the floating gate electrode, and therefore, the data retention characteristics of a flash memory can be improved.
    • 提高了非易失性存储器电路的数据保持特性。 在半导体衬底的主表面上的存储单元阵列中,布置用于累积信息电荷的浮栅电极。 浮栅电极覆盖有帽绝缘膜和形成在其上的绝缘膜4a的图案。 此外,在半导体基板的整个主表面上沉积绝缘膜2a,以覆盖绝缘膜4a和栅电极的图案。 绝缘膜2a由通过等离子体CVD法形成的氮化硅膜形成。 绝缘膜4a由通过低压CVD法形成的氮化硅膜形成。 通过设置这样的绝缘膜4a,可以抑制或防止水或氢离子扩散到浮栅电极,因此可以提高闪存的数据保持特性。