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1. 发明公开

EP0325659A4 COMPLEX COMPOUNDS FOR FORMING THIN FILM OF OXIDE SUPERCONDUCTOR AND PROCESS FOR FORMING THIN FILM OF OXIDE SUPERCONDUCTOR. 失效
标题翻译：配位化合物从超导氧化物用于薄膜分析超导氧化物的形成薄膜的形成和方法。
公开(公告)号：EP0325659A4
公开(公告)日：1989-09-19
申请号：EP88905417
申请日：1988-06-15
申请人： KAWASAKI STEEL CO
发明人： TAKAHASHI MAKOTO , UMINO HIROSHI
IPC分类号： C01G1/00 , C01B13/32 , C01G3/00 , C01G5/00 , C01G53/00 , C04B41/87 , C07C49/92 , C23C16/18 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/48 , C30B29/22 , H01B12/00 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24
CPC分类号： H01L39/126 , C23C16/408 , H01L39/2441 , Y10S505/734

2. 发明专利

DE3880816T2 未知
公开(公告)号：DE3880816T2
公开(公告)日：1993-08-12
申请号：DE3880816
申请日：1988-06-15
申请人： KAWASAKI STEEL CO
发明人： TAKAHASHI MAKOTO , UMINO HIROSHI
IPC分类号： C01G1/00 , C01B13/32 , C01G3/00 , C01G5/00 , C01G53/00 , C04B41/87 , C07C49/92 , C23C16/18 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/48 , C30B29/22 , H01B12/00 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24
摘要： Complex cpds. comprise an organic cpd. (1) having a structure which acts as a ligand and an alkaline earth metal (2). In the organic cpd. (1) three or six protons are substd. by halogen atoms (3). (1) is specified to be an acetylacetone. The alkaline earth metal (2) is specified to be Ba or Sr. The halogen atom (3) is specified to be F or Cl. The process for forming a thin film of an oxide superconductor comprises (i) mixing together the gas of the complex cpds., a gas of an organometallic cpd. of a transition metal and/or its halide, (ii) adding oxygen to establish a predetermined oxygen partial pressure in the mixt., (iii) thermally decomposing this mixt. so as to deposit a film on a base. The transition metal is specified to be at least one of Cu, Ni and Ag. During thermal decompsn. the activation energy of the reaction is supplied by heating the base or irradiating it with light.

3. 发明专利

DE3880816D1 未知
公开(公告)号：DE3880816D1
公开(公告)日：1993-06-09
申请号：DE3880816
申请日：1988-06-15
申请人： KAWASAKI STEEL CO
发明人： TAKAHASHI MAKOTO , UMINO HIROSHI
IPC分类号： C01G1/00 , C01B13/32 , C01G3/00 , C01G5/00 , C01G53/00 , C04B41/87 , C07C49/92 , C23C16/18 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/48 , C30B29/22 , H01B12/00 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24
摘要： Complex cpds. comprise an organic cpd. (1) having a structure which acts as a ligand and an alkaline earth metal (2). In the organic cpd. (1) three or six protons are substd. by halogen atoms (3). (1) is specified to be an acetylacetone. The alkaline earth metal (2) is specified to be Ba or Sr. The halogen atom (3) is specified to be F or Cl. The process for forming a thin film of an oxide superconductor comprises (i) mixing together the gas of the complex cpds., a gas of an organometallic cpd. of a transition metal and/or its halide, (ii) adding oxygen to establish a predetermined oxygen partial pressure in the mixt., (iii) thermally decomposing this mixt. so as to deposit a film on a base. The transition metal is specified to be at least one of Cu, Ni and Ag. During thermal decompsn. the activation energy of the reaction is supplied by heating the base or irradiating it with light.

4. 发明专利

JPH04193940A METHOD FOR COLOR-COATING METAL MATERIAL 失效
公开(公告)号：JPH04193940A
公开(公告)日：1992-07-14
申请号：JP32269590
申请日：1990-11-28
申请人： KAWASAKI STEEL CO
发明人： TAKAHASHI MAKOTO , ISHIHARA KANJI , TOTSUKA NOBUO , KATO KIYONORI
IPC分类号： C23C18/12 , C23C8/02 , C23C8/16
摘要： PURPOSE:To execute color coating with a simple method by executing heat treatment in H2 atmosphere after applying a solution of oxygen incorporating Ti organic compound on a metallic material surface. CONSTITUTION:The solution dissolving the oxygen incorporated Ti organic compound, is applied on the surface of a metallic material. Thereafter, the heat treatment is executed to this metallic material in the H2 atmosphere. Then, TiOX (O

5. 发明专利

JPS63307276A MOCVD DEVICE FOR PREPARING THIN FILM OF HIGH-TEMPERATURE SUPERCONDUCTOR 失效
公开(公告)号：JPS63307276A
公开(公告)日：1988-12-14
申请号：JP13996787
申请日：1987-06-05
申请人： KAWASAKI STEEL CO
发明人： TAKAHASHI MAKOTO
IPC分类号： B01J12/02 , C23C16/40 , C23C16/44 , C23C16/455 , C30B29/22 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To produce a large-area thin film of a superconductor having a uniform film compsn. and film thickness by disposing a gaseous org. metal compd. guiding pipe in the form of a multiple concentrical type around an oxygen-contg. gas guiding pipe and mixing both gases just before a substrate. CONSTITUTION:The oxygen-contg. gas guiding pipe 7 is inserted into the center of a reaction tube 2 and the gaseous org. metal compd. guiding pipe 3 is disposed in the form of the multiple concentrical type. A gas introducing pipe 1 is connected to the gaseous org. metal compd. guiding pipe 3 and the gaseous org. metal compd. [La(C5H5)3, Sr(C5H5)2, Cu(acac)2] is introduced into the reaction tube 2. The reaction tube 2 is heated by a heater 8 to prevent the condensation of the gas to the tube wall. Inert gases are introduced from a gas introducing pipe 4 and the oxygen-contg. gas is discharged in front (about 10-20cm) of the substrate 5 heated by a heater 9 through the guiding pipe 7. The gaseous org. metal compd. and the oxygen-contg. gas are thereby quickly and uniformly mixed and the thin superconductive film having the uniform film compsn. and film thickness is formed on the substrate 5.

6. 发明专利

JPS63307275A MOCVD DEVICE FOR PREPARING THIN FILM OF HIGH-TEMPERATURE SUPERCONDUCTOR 失效
公开(公告)号：JPS63307275A
公开(公告)日：1988-12-14
申请号：JP13996687
申请日：1987-06-05
申请人： KAWASAKI STEEL CO
发明人： TAKAHASHI MAKOTO
IPC分类号： B01J19/12 , C23C16/40 , C23C16/44 , C23C16/455 , C30B29/22 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To produce a thin film of a high-temp. superconductor while preventing explosion and early reaction except on a substrate by subjecting an introducing pipe for a gaseous org. metal compd. and the inside wall of a reaction tube to high-temp. heating and mixing this gas with an oxygen-contg. gas just before the substrate. CONSTITUTION:Plural inert gases (He, Ar, N2, etc.) are introduced through a flow meter 1 into a cylinder 2 for the org. metal compd. and the gaseous org. metal compd. [La(C5H5)3, Ba(OCOCH3)2, Cu(acac)2] is supplied through the introducing pipe 4 into the reaction tube 5. A heater 3 is provided to the cylinder 2 at this time and the introducing pipe 4 and the reaction tube 5 are heated by a heater 8 to prevent the condensation of the gaseous org. metal compd. to the inside wall of the pipe and tube. On the other hand, the oxygen- contg. gas is discharged onto the substrate 7 through a guiding pipe 6 and is mixed with the gaseous org. metal compd. only when said gas arrives just before (about 10-20cm) the heated substrate 7. The thin film of the high-temp. superconductor is thereby formed on the substrate 7 without generating the explosion and the early reaction except on the substrate.

7. 发明专利

JPS6320877A AMORPHOUS SILICON/CDTE PHOTOELECTRIC CONVERSION CELL 失效
公开(公告)号：JPS6320877A
公开(公告)日：1988-01-28
申请号：JP16469786
申请日：1986-07-15
申请人： KAWASAKI STEEL CO
发明人： TSUGAI NORIJI , TAKAHASHI MAKOTO
IPC分类号： H01L31/04
摘要： PURPOSE:To get rid of the deterioration of the efficiency of photoelectric conversion in a long-wave length range, and to enable the high efficiency of photoelectric conversion in a wide wavelength range by forming a CdTe thin-film having p-n junction structure between an electrode and an a-Si:H thin-film layer having p-i-n junction structure. CONSTITUTION:An n-type CdTe layer 2 and a p-type CdTe layer 3 are deposited on a metallic substrate 1 consisting of stainless as an electrode in total thickness of 0.6mum or more, thus shaping a CdTe thin-film layer 8 having p-n junction structure. An n-type a-Si:H layer 4 in thickness of 0.3-0.9mum, an i-type a-Si : H layer 5 and a p-type a-Si:H layer 6 are evaporated onto the CdTe thin-film layer 8, thus forming an s-Si : R thin-film layer 9. A transparent conductive film layer (TCO) 7 is shaped onto the a-Si:H thin-film layer 9, thus constituting a photoelectric conversion cell. Accordingly, a photoelectric conversion cell, the efficiency of photoelectric conversion of which in a long-wave length range is not deteriorated and which has spectral sensitivity characteristics excellently coinciding with the spectral distribution of solar rays in a wide wavelength range, can be acquired.

8. 发明专利

JPH10140354A FORMATION OF OXIDE SUPERCONDUCTOR THIN FILM 失效
公开(公告)号：JPH10140354A
公开(公告)日：1998-05-26
申请号：JP31501797
申请日：1997-11-17
申请人： KAWASAKI STEEL CO
发明人： TAKAHASHI MAKOTO , UNNO HIROSHI
IPC分类号： C01G1/00 , C01B13/32 , C01G3/00 , C01G5/00 , C01G53/00 , C04B41/87 , C07C49/92 , C23C16/18 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/48 , C30B29/22 , H01B12/00 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a metallic-oxide superconductor thin film using MOCVD method. SOLUTION: At least one kind of organometallic compd. of alkaline-earth metal consisting of Ba and Sr and/or its gaseous halide, at least one kind of organometallic compd. of group IIIa element and/or its gaseous halide and an organometallic compd. of transition metal contg. at least Cu and or its gaseous halide are mixed along with an inert gas. A gas contg. oxygen is mixed with the gaseous mixture to attain a specified oxygen partial pressure, and the gaseous mixture is decomposed on a substrate to form the thin film of such a multiple oxide as LnBa2 Cu3 O7 and Ln1-x Srx CuO4-y (Ln is group IIIa elements) on the substrate.

9. 发明专利

JPH0578816A PRODUCTION OF HIGH-CONCENTRATION SI-CONTAINING ELECTRIC IRON SHEET 失效
公开(公告)号：JPH0578816A
公开(公告)日：1993-03-30
申请号：JP23973491
申请日：1991-09-19
申请人： KAWASAKI STEEL CO
发明人： TAKAHASHI MAKOTO , ISHIDA MASAYOSHI , NISHIIKE UJIHIRO , UNNO HIROSHI , KATO KIYONORI , KONDO HIDEKAZU
IPC分类号： C23C10/02 , C23C10/28 , C23C16/24
摘要： PURPOSE:To produce the high-concn. Si-contg. electric iron sheet having high characteristics and good surface characteristics at a good yield by heating the electric iron sheet after removal of a surface oxide to a specific temp. and subjecting Si to precipitation and diffusion in a non-oxidative atmosphere contg. SiH4. CONSTITUTION:The surface oxide layers, insulation coatings, etc., of the electric iron sheet, such as low-concn. Sicontg. electric iron sheet or pure iron sheet are previously removed. This electric iron sheet is thereafter charged into a CVD film forming device and is heated to 900 to 1400 deg.C. The Si is precipitated on its surface and is simultaneously diffused and penetrated into the inside in a nonoxidative atmosphere contg. SiH4 or SiH6. The electric iron sheet is subjected further to a uniform diffusion treatment at need. The above-mentioned CVD treatment is preferably executed by setting the temp. T for heating the electric iron sheet at T>=200ogP1=1300 deg.C (P1 is the partial pressure Torr of SH4) or T 200logP2+1230 deg.C (P2 is the partial pressure of Si2H6). The partial pressures P1, P2 of the SiH4 and Si2H6 are preferably set at about 0.05 to 4 Torr and the total pressure in the CVD film forming chamber is set at an ordinary pressure or a reduced pressure of about >=0.1Torr.

10. 发明专利

JPH04318940A MANUFACTURE OF SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPH04318940A
公开(公告)日：1992-11-10
申请号：JP8503191
申请日：1991-04-17
申请人： KAWASAKI STEEL CO
发明人： ISHIHARA KANJI , TAKAHASHI MAKOTO , TAKAGI NOBORU , UNNO HIROSHI , KATO KIYONORI
IPC分类号： H01L21/36 , H01L21/365 , H01L21/86
摘要： PURPOSE:To reduce the generation of through-defects in a film by interrupting the supply of at least one component in the formed film components of a semiconductor crystal film once or more and keeping a substrate temperature during interruption at a temperature higher than the substrate temperature during film formation. CONSTITUTION:A substrate: a sapphire (1111) face, a aw material gas: dimethyl cadmium, diethyl tellurium, a carrier gas: hydrogen are included as the conditions of film formation. A substrate temperature: 370-400 deg.C, a raw-material gas flow rate: dimethyl cadium, 40cc/min, diethyl tellurium, 110cc/min, a carrier- gas flow rate: 5-10l/min are included as the conditions of film formation beofre interruption. The substrate temperature: 450-600 deg.C, the raw-material gas flow rate: dimethyl cadmium, 0-40cc/min, the carrier-gas flow rate: 1-5l/min, a time: 10-30min are contained on interruption. The substrate temperature: 370-400 deg.C, the raw-material gas flow rate: dimethyl cadmium, 40cc/min, diethyl tellurium, 110cc/min, the carrier-gas flow rate: 5-10l/min and film thickness: 1mum are comprised as the conditions of film formation after interruption.

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