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1. 发明专利

JPH01253120A MANUFACTURE OF TRANSPARENT CONDUCTING FILM AND PELLET FOR MANUFACTURING TRANSPARENT CONDUCTING FILM 失效
公开(公告)号：JPH01253120A
公开(公告)日：1989-10-09
申请号：JP8061988
申请日：1988-04-01
申请人： KAWASAKI STEEL CO
发明人： TSUGAI NORIJI , TAKAGI NOBORU
IPC分类号： H01L21/203 , C23C14/08 , H01B5/14 , H01B13/00 , H01L31/04
摘要： PURPOSE:To manufacture a good transparent conducting film by melting and evaporating a lump-shaped evaporation source material added with the specific wt.% of at least one kind of Fe, Ni, Cu to an evaporation source material mainly made of SnO2 and containing the preset wt.% of Sb in a vacuum container to form the film on a substrate. CONSTITUTION:A mixture added with 0.001-0.5wt.% of at least one kind of Fe, Mi, Cu to an evaporation source material mainly made of SnO2 and containing 1-15wt.% of Sb is put in a stainless container and pressurized. The pellet of the mixture is taken out from the container, it is put in the crucible of an electron beam evaporating device, the bell jar of the evaporating device is exhausted, then O2 with the preset pressure is put in the bell jar. An electron beam is radiated to the mixture pellet, a film with the preset thickness is deposited on a glass substrate. A hydro-amorphous Si film is formed by the plasma CVD method on the glass substrate deposited with this transparent conducting film, and a laminated plate further deposited with Al is manufactured.

2. 发明专利

JPH01158780A LAMINATED PHOTOELECTRIC CONVERTER 失效
公开(公告)号：JPH01158780A
公开(公告)日：1989-06-21
申请号：JP31710487
申请日：1987-12-15
申请人： KAWASAKI STEEL CO
发明人： TAKAGI NOBORU , TSUGAI NORIJI , TAKAHASHI MAKOTO , ISHIHARA KANJI
IPC分类号： H01L31/0248 , H01L31/08
摘要： PURPOSE:To improve dielectric strength between electrodes and obtain the higher degree of freedom of the wiring between cells by a method wherein the respective electrodes are extended to different parts of the same main surface of a substrate and isolated from each other by insulating films. CONSTITUTION:A metal layer 2 is formed on a substrate 1 as a lower electrode. A (CdTe)p-n junction cell is formed on the metal layer 2 as a lower element cell 5. Then the upper circumferential part and side surface of the cell 5, and the adjacent parts of the substrate 1 are covered with a insulating film 6. Then a transparent conductive film(TCO film) is formed on the cell 5 as an intermediate electrode 7 so as to be extended toward one side of the cell 5 and to the insulating film 6 on the substrate 1. Then an (a-Si)p-i-n junction cell is formed as an upper element cell 11 on the TCO film just above the ell 5. Then the upper circumferential part and side surface of the cell 11 opposite to the side surface of the cell 5 to which the electrode 7 is extended and the adjacent part on the substrate 1 are covered with an insulating film 12. Then a TCO film is formed on the cell 11 as an upper electrode 13 so as to be extended to the film 12 on the substrate 1. With this constitution, the electrodes 2, 7 and 13 are isolated from each other by the insulating film 6 and 12.

3. 发明专利

JPH06196414A GAS SUPPLYING DEVICE FOR VAPOR GROWTH 失效
公开(公告)号：JPH06196414A
公开(公告)日：1994-07-15
申请号：JP34621792
申请日：1992-12-25
申请人： KAWASAKI STEEL CO
发明人： TAKAGI NOBORU , KONDO HIDEKAZU
IPC分类号： C30B25/14 , H01L21/205 , H01L21/31
摘要： PURPOSE:To vaporize and transport a liquid raw material, such as a high- viscosity organic metal, stably and efficiently without using a complicated device in a vapor growth method. CONSTITUTION:A gas introducing tube 3 is provided in the center of a hermetic container 1 having a cylindrical internal surface and a gas discharge port 6 in the lower end of the tube 3 is made to position over 1mm from the inner bottom of the container 1. A perforated member 7 is provided at a position over 1cm from the upper part of the port 6. The size of holes in the member 7 is formed in a size of 0.1 to 2.0mm so as to prevent a liquid raw material from being dripped downwards by the surface tension.

4. 发明专利

JPH023992A MANUFACTURE OF SOLAR CELL 失效
公开(公告)号：JPH023992A
公开(公告)日：1990-01-09
申请号：JP15237188
申请日：1988-06-22
申请人： KAWASAKI STEEL CO
发明人： TAKAHASHI MAKOTO , TAKAGI NOBORU , TSUGAI NORIJI , ISHIHARA KANJI
IPC分类号： H01L31/04
摘要： PURPOSE:To improve characteristics such as photovoltaic power, by providing a non-doped layer between N- and P-layers for inhibiting diffusion of a dopant to the N-layer during formation of the P-layer and for controlling position of the P-N junction and distribution of carriers in the direction of depth. CONSTITUTION:An N-type CdTe thin film doped with a donor dopant of a group III element such as In or the like is deposited at a substrate temperature of 400-600 deg.C. Then, a 100-500Angstrom thick undoped CdTe layer is deposited at a substrate temperature of 300-380 deg.C that is lower than said substrate temperature. Thereafter, a P-type CdTe thin film doped with an acceptor dopant of a group V element such as As or the like is deposited also at a substrate temperature of 300-380 deg.C. By interposing the non-doped CdTe layer between the N- and P-layers in the formation of the P-N junction in this manner, possible deviation between the designed and actual positions of the P-N junction and deviation between the designed and actual distributions of the dopant in the direction of depth in the P- and N-layers are limited to the thickness of the non-doped CdTe layer formed between the N- and P-layers.

5. 发明专利

JPH06196415A METHOD AND DEVICE FOR SUPPLYING GAS FOR VAPOR GROWTH 失效
公开(公告)号：JPH06196415A
公开(公告)日：1994-07-15
申请号：JP34621892
申请日：1992-12-25
申请人： KAWASAKI STEEL CO
发明人： TAKAGI NOBORU
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205
摘要： PURPOSE:To supply stably the saturated vapor of a liquid raw material, which is high in visocsity and is low in vapor pressure. CONSTITUTION:An introducing tube 2 for a liquid raw material is coupled with the entrance of the upper part of a conduit 1 formed by winding a glass tube into a helical form, DMAH is continuously introduced in the conduit 1 and hydrogen gas is introduced from a carrier gas introducing tube 3 to the conduit 1. The length of the conduit 1 is decided on the basis of the diffusion rate of the vapor of the DMAH in the carrier gas and the maximum flow velocity of the carrier gas so that the carrier gas and the DMAH come into contact to each other for a sufficient time to saturate the carrier gas with the vapor of the DMAH.

6. 发明专利

JPH04318940A MANUFACTURE OF SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPH04318940A
公开(公告)日：1992-11-10
申请号：JP8503191
申请日：1991-04-17
申请人： KAWASAKI STEEL CO
发明人： ISHIHARA KANJI , TAKAHASHI MAKOTO , TAKAGI NOBORU , UNNO HIROSHI , KATO KIYONORI
IPC分类号： H01L21/36 , H01L21/365 , H01L21/86
摘要： PURPOSE:To reduce the generation of through-defects in a film by interrupting the supply of at least one component in the formed film components of a semiconductor crystal film once or more and keeping a substrate temperature during interruption at a temperature higher than the substrate temperature during film formation. CONSTITUTION:A substrate: a sapphire (1111) face, a aw material gas: dimethyl cadmium, diethyl tellurium, a carrier gas: hydrogen are included as the conditions of film formation. A substrate temperature: 370-400 deg.C, a raw-material gas flow rate: dimethyl cadium, 40cc/min, diethyl tellurium, 110cc/min, a carrier- gas flow rate: 5-10l/min are included as the conditions of film formation beofre interruption. The substrate temperature: 450-600 deg.C, the raw-material gas flow rate: dimethyl cadmium, 0-40cc/min, the carrier-gas flow rate: 1-5l/min, a time: 10-30min are contained on interruption. The substrate temperature: 370-400 deg.C, the raw-material gas flow rate: dimethyl cadmium, 40cc/min, diethyl tellurium, 110cc/min, the carrier-gas flow rate: 5-10l/min and film thickness: 1mum are comprised as the conditions of film formation after interruption.

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