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1. 发明授权

US06602433B1 Gas delivery system 有权
标题翻译：气体输送系统
公开(公告)号：US06602433B1
公开(公告)日：2003-08-05
申请号：US09674658
申请日：2000-12-18
申请人： Jyoti Kiron Bhardwaj , Nicholas Shepherd , Leslie Michael Lea
发明人： Jyoti Kiron Bhardwaj , Nicholas Shepherd , Leslie Michael Lea
IPC分类号： B44C122
CPC分类号： C07C17/00 , B01J7/00 , B01J12/00 , B01J12/002 , B01J12/007 , B01J19/088 , B01J19/24 , B01J19/2445 , B01J19/245 , B01J2219/00038 , B01J2219/0004 , B01J2219/00058 , B01J2219/00162 , B01J2219/0807 , B01J2219/0809 , B01J2219/0841 , B01J2219/0869 , B01J2219/0871 , B01J2219/0883 , B01J2219/0894 , C01B7/24 , G01P15/0802 , G01P15/125 , H01L21/30604 , H01L21/3065 , H01L21/30655 , H01L21/3081
摘要： A substrate is treated by supplying an etchant and/or deposition gas into a chamber in which the substrate is situated. In order to avoid the problems associated with transportation of toxic gases, the gases required for such processes are delivered directly from a gas generation and delivery system positioned locally to the chamber.
摘要翻译：通过将蚀刻剂和/或沉积气体供应到其中所述基板所在的室中来处理基板。为了避免与有毒气体的运输相关的问题，这些过程所需的气体直接从定位于腔室的气体发生和输送系统输送。

2. 发明授权

US06534922B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US06534922B2
公开(公告)日：2003-03-18
申请号：US09884460
申请日：2001-06-20
申请人： Jyoti Kiron Bhardwaj , Leslie Michael Lea
发明人： Jyoti Kiron Bhardwaj , Leslie Michael Lea
IPC分类号： C23F102
CPC分类号： H01J37/321 , H05H1/46
摘要： A plasma processing apparatus includes a processing chamber having a working volume. A single Radio-Frequency (RF) plasma generating antenna is positioned outside the working volume for inducing an electric field in the working volume. A dielectric trough extends into a wall of the chamber. The antenna is non-planar and transfers power through at least one wall and the base of the trough.
摘要翻译：等离子体处理装置包括具有工作容积的处理室。单个射频（RF）等离子体产生天线位于工作体积的外部，用于在工作体积中引起电场。电介质槽延伸到腔室的壁中。天线是非平面的，并且通过至少一个壁和槽的底部传递电力。

3. 发明授权

US07491649B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07491649B2
公开(公告)日：2009-02-17
申请号：US11080964
申请日：2005-03-16
申请人： Jyoti Kiron Bhardwaj , Leslie Michael Lea
发明人： Jyoti Kiron Bhardwaj , Leslie Michael Lea
IPC分类号： H01L21/302
CPC分类号： H01J37/32623 , H01J37/3266 , H01J2237/3348 , H01L21/30655
摘要： A plasma processing apparatus includes a chamber having a support for a substrate, and at least one gas inlet into the chamber. The apparatus is configured to alternately introduce an etch gas and a deposition gas into the chamber through the at least on gas inlet, and to strike a plasma into the etch gas and the deposition gas alternately introduced into the chamber. The apparatus is further equipped with an attenuation device for reducing and/or homogenizing the ion flux from the plasma substantially without affecting the neutral radical number density.
摘要翻译：等离子体处理装置包括具有用于基板的支撑件的腔室和进入腔室的至少一个气体入口。该装置被配置为通过至少一个气体入口交替地将蚀刻气体和沉积气体引入室中，并且将等离子体撞击到交替地引入室中的蚀刻气体和沉积气体中。该装置还配备有用于在不影响中性自由基数密度的情况下将来自等离子体的离子通量减少和/或均化的衰减装置。

4. 发明授权

US06602384B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US06602384B2
公开(公告)日：2003-08-05
申请号：US09895169
申请日：2001-07-02
申请人： Jyoti Kiron Bhardwaj , Leslie Michael Lea
发明人： Jyoti Kiron Bhardwaj , Leslie Michael Lea
IPC分类号： H05H100
CPC分类号： H01J37/321 , H01J37/32935 , H01J37/3299
摘要： A workpiece support includes a support body having a surface for supporting a workpiece thereon, and at least one Langmuir probe embedded within the support body. The Langmuir probe is covered by a layer of semiconductor or insulator. The workpiece support further includes a mechanism for intermittently feeding RF power to Langmuir probe, and for measuring a discharge of a capacitor in series with the Langmuir probe while the RF power is not supplied to the Langmuir probe.
摘要翻译：工件支撑件包括具有用于在其上支撑工件的表面的支撑体和嵌入在支撑体内的至少一个朗缪尔探针。朗缪尔探针被半导体或绝缘体层覆盖。工件支架还包括用于间歇地向Langmuir探头馈送RF功率的机构，以及用于测量与Langmuir探针串联的电容器的放电，同时RF功率未提供给Langmuir探头。

5. 发明授权

US06259209B1 Plasma processing apparatus with coils in dielectric windows 失效
标题翻译：在电介质窗口中具有线圈的等离子体处理装置
公开(公告)号：US06259209B1
公开(公告)日：2001-07-10
申请号：US08938995
申请日：1997-09-26
申请人： Jyoti Kiron Bhardwaj , Leslie Michael Lea
发明人： Jyoti Kiron Bhardwaj , Leslie Michael Lea
IPC分类号： H01J724
CPC分类号： H01J37/321 , H05H1/46
摘要： A wafer processing chamber 11 includes a wafer support 12, a dielectyric window 13 and coaxial coils 15 and 16 located outside the dielectric window 13 for inducing a plasma within the chamber. A variety of coil/dielectric windows are described together with protocols for their control.
摘要翻译：晶片处理室11包括晶片支撑件12，介电窗13和位于电介质窗13外部的同轴线圈15和16，用于在室内诱导等离子体。描述各种线圈/电介质窗口以及用于其控制的协议。

6. 发明授权

US06187685B1 Method and apparatus for etching a substrate 有权
标题翻译：蚀刻基板的方法和装置
公开(公告)号：US06187685B1
公开(公告)日：2001-02-13
申请号：US09245861
申请日：1999-02-08
申请人： Janet Hopkins , Ian Ronald Johnston , Jyoti Kiron Bhardwaj , Huma Ashraf , Alan Michael Hynes , Leslie Michael Lea
发明人： Janet Hopkins , Ian Ronald Johnston , Jyoti Kiron Bhardwaj , Huma Ashraf , Alan Michael Hynes , Leslie Michael Lea
IPC分类号： H01L2100
CPC分类号： H01L21/30655 , H01L21/32137
摘要： There is disclosed a method and apparatus for etching a substrate. The method comprises the steps of etching a substrate or alternately etching and depositing a passivation layer. A bias frequency, which may be pulsed, may be applied to the substrate and may be at or below the ion plasma frequency.
摘要翻译：公开了一种蚀刻基板的方法和装置。该方法包括蚀刻衬底或交替地蚀刻和沉积钝化层的步骤。可以将脉冲的偏置频率施加到衬底上，并且可以处于或低于离子等离子体频率。

7. 发明授权

US07306745B1 Method and apparatus for stabilizing a plasma 有权
标题翻译：用于稳定等离子体的方法和装置
公开(公告)号：US07306745B1
公开(公告)日：2007-12-11
申请号：US09674925
申请日：2000-04-12
申请人： Jyoti Kiron Bhardwaj , Leslie Michael Lea , Edward Guibarra
发明人： Jyoti Kiron Bhardwaj , Leslie Michael Lea , Edward Guibarra
IPC分类号： B44C1/22
CPC分类号： H01J37/32935 , H01J37/321 , H01L21/30655
摘要： A workpiece is processed in a chamber by striking a plasma in the chamber, treating the workpiece by cyclically adjusting the processing parameters between at least a first step having a first set of processing parameters and a second step having a second set of process parameters, wherein the plasma is stabilized during the transition between the first and second steps. These steps may comprise cyclic etch and deposition steps. One possibility for stabilizing the plasma is by matching the impedance of the plasma to the impedance of the power supply which provides energy to the plasma, by means of a matching unit which can be controlled in a variety of ways depending upon the step type or time during the step. Another possibility is to prevent or reduce substantially variation in the pressure in the chamber between the first and second steps.
摘要翻译：通过在腔室中击打等离子体来在腔室中处理工件，通过在具有第一组处理参数的至少第一步骤和具有第二组工艺参数的第二步骤之间循环调整处理参数来处理工件，其中等离子体在第一和第二步骤之间的转变期间是稳定的。这些步骤可以包括循环蚀刻和沉积步骤。稳定等离子体的一种可能性是通过匹配单元来匹配等离子体的阻抗与向等离子体提供能量的电源的阻抗，该匹配单元可以根据步骤类型或时间以多种方式进行控制在步骤另一种可能性是防止或减少第一和第二步骤之间腔室中的压力的显着变化。

8. 发明授权

US06929784B1 Chlorotrifuorine gas generator system 有权
标题翻译：氯三氟甲烷气体发生器系统
公开(公告)号：US06929784B1
公开(公告)日：2005-08-16
申请号：US09674660
申请日：2000-03-06
申请人： Jyoti Kiron Bhardwaj , Nicholas Shepherd , Leslie Michael Lea , Graham Hodgson
发明人： Jyoti Kiron Bhardwaj , Nicholas Shepherd , Leslie Michael Lea , Graham Hodgson
IPC分类号： B01J7/00 , B01J12/00 , B01J19/08 , B01J19/24 , B81C1/00 , C01B7/24 , C07C17/00 , G01P15/08 , G01P15/125 , H01L21/00 , H01L21/306 , H01L21/3065 , H01L21/308 , H01L21/3213 , B01J8/04 , A61L9/00
CPC分类号： H01L21/67069 , B01J7/00 , B01J12/00 , B01J12/002 , B01J12/007 , B01J19/088 , B01J19/24 , B01J19/2445 , B01J19/245 , B01J2219/00038 , B01J2219/0004 , B01J2219/00058 , B01J2219/00162 , B01J2219/0807 , B01J2219/0809 , B01J2219/0841 , B01J2219/0869 , B01J2219/0871 , B01J2219/0883 , B01J2219/0894 , C01B7/24 , C07C17/00 , G01P15/0802 , G01P15/125 , H01L21/30604 , H01L21/3065 , H01L21/30655 , H01L21/3081 , H01L21/32136 , H01L21/32137 , Y10S422/906
摘要： A ClF3 gas generation system is provided with supply sources of chlorine (3) (for example a cylinder of compressed chlorine) and fluorine (4) (for example a fluorine generator) connected into a gas reaction chamber (2) enabling generation of ClF3 gas. The reaction chamber has a valved outlet (C) for the supply of the ClF3 gas to a process chamber for immediate local use.
摘要翻译：气体发生系统具有氯气供应源（3）（例如压缩氯气瓶）和氟（4）（例如氟发生器），其连接到气体反应室（2）能够产生ClF 3气体。反应室具有用于将ClF 3 N 3气体供应到处理室的阀门出口（C），用于立即局部使用。

9. 发明授权

US06458239B1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US06458239B1
公开(公告)日：2002-10-01
申请号：US09142542
申请日：1998-09-10
申请人： Jyoti Kiron Bhardwaj , Leslie Michael Lea
发明人： Jyoti Kiron Bhardwaj , Leslie Michael Lea
IPC分类号： H05H100
CPC分类号： H01J37/321 , H01J37/32935 , H01J37/3299
摘要： A plurality of antennae generate a plasma in the chamber containing a workpiece, and the relative outputs of the antennae are varied as a detector detects a property or parameter of the resultant plasma or process. The relative outputs of the antennae are controlled in accordance with the property or parameter detected. The detector, which detects the property or parameter at or near the workpiece location, is a Langmuir probe which is shielded from the plasma by a semiconductor or insulating layer and is driven.
摘要翻译：多个天线在包含工件的腔室中产生等离子体，并且随着检测器检测所得到的等离子体或过程的性质或参数，天线的相对输出变化。天线的相对输出根据检测到的属性或参数进行控制。在工件位置或其附近检测性能或参数的检测器是Langmuir探头，其通过半导体或绝缘层与等离子体屏蔽并被驱动。

10. 发明授权

US07141504B1 Method and apparatus for anisotropic etching 有权
标题翻译：各向异性蚀刻的方法和装置
公开(公告)号：US07141504B1
公开(公告)日：2006-11-28
申请号：US09744212
申请日：1999-07-23
申请人： Jyoti Kiron Bhardwaj
发明人： Jyoti Kiron Bhardwaj
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： B81C1/00619 , B01J12/007 , B01J19/2445 , B01J2219/00038 , B01J2219/0004 , B01J2219/00058 , B01J2219/00162 , B01J2219/0809 , B01J2219/0841 , B01J2219/0869 , B01J2219/0871 , B01J2219/0894 , B81C2201/0112 , C01B7/24 , C07C17/00 , H01L21/30621 , H01L21/30655 , H01L21/31116 , H01L21/31138 , H01L21/32135 , H01L21/32136
摘要： There is disclosed a method of treating a substrate material or a film present on the material surface comprising cyclically performing the following steps: (a) etching the material or film; (b) depositing or forming a passivation layer on the surfaces of an etched feature; and (c) selectively removing the passivation layer from the etched feature in order that the etching proceeds in a direction substantially perpendicular to the material or film surface. At least one of the steps (a) or (b) is performed in the absence of a plasma. Also disclosed is an apparatus for performing the method.
摘要翻译：公开了一种处理材料表面上存在的基材或膜的方法，包括循环地执行以下步骤：（a）蚀刻该材料或膜; （b）在蚀刻特征的表面上沉积或形成钝化层; 和（c）从蚀刻的特征中选择性地去除钝化层，以便蚀刻沿基本垂直于材料或膜表面的方向进行。在不存在等离子体的情况下执行步骤（a）或（b）中的至少一个。还公开了一种用于执行该方法的装置。

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