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1. 发明申请

US20060183277A1 Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layer 有权
标题翻译：制造具有形成在退火的高k栅介质层上的金属栅电极的半导体器件的方法
公开(公告)号：US20060183277A1
公开(公告)日：2006-08-17
申请号：US10742678
申请日：2003-12-19
申请人： Justin Brask , Mark Doczy , Jack Kavalieros , Uday Shah , Matthew Metz , Chris Barns , Suman Datta , Christopher Thomas , Robert Chau
发明人： Justin Brask , Mark Doczy , Jack Kavalieros , Uday Shah , Matthew Metz , Chris Barns , Suman Datta , Christopher Thomas , Robert Chau
IPC分类号： H01L21/8234 , H01L21/31
CPC分类号： H01L21/823857 , H01L21/28079 , H01L21/31691 , H01L21/823842 , H01L29/495 , H01L29/51 , H01L29/66545
摘要： A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, and forming a sacrificial layer on the high-k gate dielectric layer. After etching the sacrificial layer, first and second spacers are formed on opposite sides of the sacrificial layer. After removing the sacrificial layer to generate a trench that is positioned between the first and second spacers, a metal layer is formed on the high-k gate dielectric layer.
摘要翻译：描述制造半导体器件的方法。该方法包括在衬底上形成高k栅极电介质层，并在高k栅极电介质层上形成牺牲层。在蚀刻牺牲层之后，在牺牲层的相对侧上形成第一和第二间隔物。在去除牺牲层以产生位于第一和第二间隔物之间的沟槽之后，在高k栅介质层上形成金属层。

2. 发明申请

US20050148136A1 CMOS DEVICE WITH METAL AND SILICIDE GATE ELECTRODES AND A METHOD FOR MAKING IT 有权
标题翻译：具有金属和硅化物电极的CMOS器件及其制造方法
公开(公告)号：US20050148136A1
公开(公告)日：2005-07-07
申请号：US10748559
申请日：2003-12-29
申请人： Justin Brask , Mark Doczy , Jack Kavalieros , Matthew Metz , Chris Barns , Uday Shah , Suman Datta , Christopher Thomas , Robert Chau
发明人： Justin Brask , Mark Doczy , Jack Kavalieros , Matthew Metz , Chris Barns , Uday Shah , Suman Datta , Christopher Thomas , Robert Chau
IPC分类号： H01L21/8238 , H01L23/48
CPC分类号： H01L21/28097 , H01L21/823835 , H01L21/823842 , H01L27/1203 , H01L29/4975 , H01L29/66545 , Y10S438/926
摘要： A semiconductor device and a method for forming it are described. The semiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate.
摘要翻译：对半导体装置及其形成方法进行说明。半导体器件包括形成在衬底的第一部分上的金属NMOS栅电极和形成在衬底的第二部分上的硅化物PMOS栅电极。

3. 发明申请

US20060045968A1 Atomic layer deposition of high quality high-k transition metal and rare earth oxides 审中-公开
标题翻译：原子层沉积的高品质高k过渡金属和稀土氧化物
公开(公告)号：US20060045968A1
公开(公告)日：2006-03-02
申请号：US10925573
申请日：2004-08-25
申请人： Matthew Metz , Mark Brazier , Timothy Glassman , Christopher Thomas , Lawrence Foley , Christopher Parker , Ying Zhou , Markus Kuhn , Suman Datta , Jack Kavalieros , Mark Doczy , Justin Brask , Robert Chau
发明人： Matthew Metz , Mark Brazier , Timothy Glassman , Christopher Thomas , Lawrence Foley , Christopher Parker , Ying Zhou , Markus Kuhn , Suman Datta , Jack Kavalieros , Mark Doczy , Justin Brask , Robert Chau
IPC分类号： C23C16/00
CPC分类号： C23C16/45527
摘要： Increasing the number of successive pulses of oxidant before applying pulses of metal precursor may improve the quality of the resulting metal or rare earth oxide films. These metal or rare earth oxide films may be utilized for high dielectric constant gate dielectrics. In addition, pulsing the oxidant during the pre-stabilization period may be advantageous. Also, using more pulses of oxidant than the pulses of precursor may reduce chlorine concentration in the resulting films.
摘要翻译：在施加金属前体的脉冲之前增加氧化剂的连续脉冲数可以提高所得金属或稀土氧化物膜的质量。这些金属或稀土氧化物膜可用于高介电常数栅极电介质。此外，在预稳定化期间脉冲氧化剂可能是有利的。此外，使用比前体脉冲更多的氧化剂脉冲可以降低所得膜中的氯浓度。

4. 发明授权

US09508322B2 Text box resizing 有权
标题翻译：文本框调整大小
公开(公告)号：US09508322B2
公开(公告)日：2016-11-29
申请号：US12790673
申请日：2010-05-28
申请人： Christopher Thomas
发明人： Christopher Thomas
IPC分类号： G09G5/00 , G09G5/26 , G06F3/0488 , G09G5/08
CPC分类号： G09G5/26 , G06F3/0488 , G09G5/08 , G09G2340/045 , G09G2340/145
摘要： A system, method, and computer readable medium are disclosed for re-sizing input fields and text of a user interface displayed within a touch-sensitive screen. The user interface comprises an initial view with at least one input field. The user interface is provided for display on the screen. A touch interaction is detected on the screen, and it is determined whether the interaction is within a predefined area of an input field. Responsive to determining that the interaction is within the predefined area, a magnified view of the input field is generated. The magnified view increases the proportion of the screen filled by the input field and text relative to the initial view. The magnified view is then presented for display on the screen.
摘要翻译：公开了一种系统，方法和计算机可读介质，用于重新调整在触敏屏幕内显示的用户界面的输入字段和文本。用户界面包括具有至少一个输入字段的初始视图。提供用户界面以在屏幕上显示。在屏幕上检测到触摸交互，并且确定交互是否在输入字段的预定义区域内。响应于确定交互在预定区域内，生成输入字段的放大视图。放大视图增加了输入字段和文本相对于初始视图填充的屏幕的比例。然后放大的视图显示在屏幕上。

5. 发明授权

US08855679B2 Method and system for populating location-based information 有权
标题翻译：用于填充基于位置的信息的方法和系统
公开(公告)号：US08855679B2
公开(公告)日：2014-10-07
申请号：US13013851
申请日：2011-01-26
申请人： Vimal Nair , Sudhakar Aramalla , Agnes Tang , Roongko Doong , Justin Basanese , Oluwatosin Aduroja , Dang Le , Christopher Thomas , Kit Prud'homme , Manish Patel , Manshan Wong
发明人： Vimal Nair , Sudhakar Aramalla , Agnes Tang , Roongko Doong , Justin Basanese , Oluwatosin Aduroja , Dang Le , Christopher Thomas , Kit Prud'homme , Manish Patel , Manshan Wong
IPC分类号： H04W24/00 , H04W4/04
CPC分类号： H04W4/043
摘要： Embodiments of the present invention disclose a method and system for populating location-based information on a portable electronic device. According to one embodiment, a request to create a memory record on the portable electronic device is received from a user. Based on the geographic location of the portable electronic device, relevant location information associated with a plurality of reference fields of the memory record are determined and displayed on the portable electronic device.
摘要翻译：本发明的实施例公开了一种用于在便携式电子设备上填充基于位置的信息的方法和系统。根据一个实施例，从用户接收到在便携式电子设备上创建存储器记录的请求。基于便携式电子设备的地理位置，确定与存储器记录的多个参考场相关联的相关位置信息并将其显示在便携式电子设备上。

6. 发明授权

US08240331B2 Negative pressure relief valve assembly 有权
标题翻译：负压溢流阀总成
公开(公告)号：US08240331B2
公开(公告)日：2012-08-14
申请号：US12253080
申请日：2008-10-16
申请人： Andrew Appleby , Jennifer Reich , Christopher Thomas , Dave Tornquist
发明人： Andrew Appleby , Jennifer Reich , Christopher Thomas , Dave Tornquist
IPC分类号： F16K15/03
CPC分类号： B64D13/00 , F16K15/033 , F16K17/0413 , F16K17/042 , F16K24/06 , Y10T137/6906 , Y10T137/7738 , Y10T137/7897 , Y10T137/7898
摘要： A negative pressure valve assembly is provided. The valve assembly comprises a valve port assembly comprising a port and a flange substantially surrounding the port, a valve comprising a plate adapted to substantially cover the port, the plate comprising a minor edge, a major edge having a major edge length, and a plate biasing assembly stop located at a first position along the major edge, the first position more than 50% of the major edge length as measured from the minor edge. The valve assembly further comprises a hinge coupled to the plate, the hinge adapted to couple the plate to the flange, and first plate biasing assembly adapted to couple to the valve port assembly and to bias the plate towards the valve port assembly, the first plate biasing assembly comprising a resilient member adapted to contact the stop plate.
摘要翻译：提供负压阀组件。阀组件包括阀口组件，该阀口组件包括端口和基本上围绕端口的凸缘，阀包括适于基本上覆盖端口的板，该板包括小边缘，具有主边缘长度的主边缘和板位于沿着主边缘的第一位置的偏置组件止动件，第一位置大于从较小边缘测量的主边缘长度的50％。阀组件还包括联接到板的铰链，铰链适于将板耦合到凸缘，以及第一板偏压组件，其适于联接到阀口组件并将板偏压到阀口组件，第一板偏置组件包括适于接触止动板的弹性构件。

7. 发明授权

US08000763B2 Integrated devices having extruded electrode structures and methods of using same 有权
标题翻译：具有挤出电极结构的集成器件及其使用方法
公开(公告)号：US08000763B2
公开(公告)日：2011-08-16
申请号：US12495696
申请日：2009-06-30
申请人： John C. Mazza , Songbiao Zhang , Udo Hoss , Christopher Thomas
发明人： John C. Mazza , Songbiao Zhang , Udo Hoss , Christopher Thomas
IPC分类号： A61B5/05
CPC分类号： A61B5/4839 , A61B5/14532 , A61B5/1486 , A61B5/14865 , A61B5/150022 , A61B5/150358 , A61B5/150435 , A61B5/150442 , A61B5/150503 , A61B5/150633 , A61B5/15087 , A61B5/151 , A61B5/157 , A61B5/6848 , A61B2562/0295 , A61B2562/125 , G01N27/3272
摘要： The present disclosure provides electrode structures and integrated electrode structures having one or more conductive materials coextruded with one or more dielectric materials. The disclosed electrode structures can be configured for use as analyte sensors. Also provided, are methods of making and using the electrode structures and integrated electrode structures described herein.
摘要翻译：本公开提供具有一个或多个与一种或多种介电材料共挤出的导电材料的电极结构和集成电极结构。公开的电极结构可被配置为用作分析物传感器。还提供了制造和使用本文所述的电极结构和集成电极结构的方法。

8. 发明申请

US20070080605A1 Betavoltaic cell 有权
标题翻译： Betavoltaic细胞
公开(公告)号：US20070080605A1
公开(公告)日：2007-04-12
申请号：US11509323
申请日：2006-08-24
申请人： MVS Chandrashekhar , Christopher Thomas , Michael Spencer
发明人： MVS Chandrashekhar , Christopher Thomas , Michael Spencer
IPC分类号： G21H1/00
CPC分类号： G21H1/02
摘要： High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.
摘要翻译：半导体中的高纵横比微加工结构用于通过在小体积中提供大的表面积来改善Betavoltaic细胞中的功率密度。放射性β发射材料可以放置在结构之间的间隙内以为电池提供燃料。支柱可以由SiC形成。在一个实施例中，SiC柱由n型SiC形成。通过对形成在SiC上的硼硅酸盐玻璃硼源进行退火，得到硼等P型掺杂剂。然后取出玻璃。在另外的实施方案中，掺杂剂可以被注入，用玻璃涂覆，然后退火。掺杂导致SiC中的浅平面结。

9. 发明申请

US20060006071A1 Method for improving electroplating in sub-0.1um interconnects by adjusting immersion conditions 审中-公开
标题翻译：通过调整浸入条件来改善0.1μm以下互连电镀的方法
公开(公告)号：US20060006071A1
公开(公告)日：2006-01-12
申请号：US11225493
申请日：2005-09-12
申请人： Guangli Che , Vinay Chikarmane , Christopher Thomas , Robert Wu , Daniel Zierath
发明人： Guangli Che , Vinay Chikarmane , Christopher Thomas , Robert Wu , Daniel Zierath
IPC分类号： C25D21/12 , B23H3/02
CPC分类号： C25D7/123 , C25D5/18 , C25D17/001
摘要： Embodiments of the invention provide methods of reducing electroplating defects by adjusting immersion conditions. For one embodiment, the immersion conditions are adjusted based upon characteristics of the substrate, including feature size. Additionally or alternatively, the immersion conditions may be adjusted based upon aspects of the electroplating process, including motion of the substrate upon immersion. Immersion conditions that may be adjusted in accordance with various embodiments of the invention include entry bias voltage/current, vertical immersion speed, and angle of immersion.
摘要翻译：本发明的实施例提供了通过调节浸渍条件来减少电镀缺陷的方法。对于一个实施例，基于衬底的特性（包括特征尺寸）来调整浸渍条件。另外或替代地，浸渍条件可以基于电镀工艺的方面来进行调整，包括浸渍时基片的运动。根据本发明的各种实施例可以调节的浸渍条件包括入口偏置电压/电流，垂直浸入速度和浸入角度。

10. 发明申请

US20050044184A1 Network based KVM switching system 有权
标题翻译：基于网络的KVM切换系统
公开(公告)号：US20050044184A1
公开(公告)日：2005-02-24
申请号：US10640257
申请日：2003-08-14
申请人： Christopher Thomas , Robin Anderson , Robert Gilgen , Mark DesMarais , William Pinkston , Jamie Collins , Stephan Schultz
发明人： Christopher Thomas , Robin Anderson , Robert Gilgen , Mark DesMarais , William Pinkston , Jamie Collins , Stephan Schultz
IPC分类号： G06F13/00 , G06F3/023 , G06F3/038 , H04L12/46 , H04L29/06 , G06F15/16
CPC分类号： G06F3/038 , G06F3/023
摘要： A keyboard/video/mouse (KVM) switching protocol is disclosed in which KVM information is applied to a network of workstations. At least one data converter communicates on the workstation network and retrieves KVM information from the workstation network that is addressed to a server assigned to the converter. The converter places the KVM information in a format suitable to the assigned server and applies the converted KVM information to the appropriate standard device ports of the server. The system provides motherboard access to the servers that is characteristics of KVM switches but provides essentially unlimited scalability not known in traditional KVM switches.
摘要翻译：公开了一种键盘/视频/鼠标（KVM）切换协议，其中将KVM信息应用于工作站网络。至少一个数据转换器在工作站网络上进行通信，并且从工作站网络检索寻址到分配给转换器的服务器的KVM信息。转换器将KVM信息以适合于分配的服务器的格式放置，并将转换的KVM信息应用于服务器的相应标准设备端口。该系统提供对作为KVM交换机特性的服务器的主板访问，但是在传统的KVM交换机中提供基本上无限的可扩展性。

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