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1. 发明授权

US5775889A Heat treatment process for preventing slips in semiconductor wafers 失效
标题翻译：用于防止半导体晶片中的滑移的热处理工艺
公开(公告)号：US5775889A
公开(公告)日：1998-07-07
申请号：US549163
申请日：1995-10-27
申请人： Junichi Kobayashi , Eiichiro Takanabe , Harunori Ushikawa , Tomohisa Shimazu
发明人： Junichi Kobayashi , Eiichiro Takanabe , Harunori Ushikawa , Tomohisa Shimazu
IPC分类号： C23C16/46 , C30B31/12 , C30B31/14 , F27B9/12
CPC分类号： C30B31/14 , C23C16/46 , C30B31/12
摘要： A heat treatment apparatus comprising a reaction vessel located in a vertical furnace, and a ladder boat for mounting a plurality of semiconductor wafers one above another in parallel with each other. A vertical mounting pitch of mounting the wafers on the ladder boat is set at, e.g., 40 mm. When a treatment temperature is 1000.degree. C., intra-surface temperature differences of the wafers, objects to be treated, can be suppressed to 10.degree. C. at the time of passing 900.degree. C. even when 600.degree. C. is raised to 100.degree. C. at a 100.degree. C./min rate, whereby no slip occurs in large-diameter semiconductor wafers of an above 250 mm diameter even with high temperature increases at high rates in heat treatments, as of oxidation, diffusion, etc.
摘要翻译：一种热处理设备，包括位于立式炉中的反应容器和用于彼此平行地安装多个半导体晶片的梯形舟。将晶片安装在梯形船上的垂直安装间距设定为例如40mm。当处理温度为1000℃时，即使在600℃升高至900℃时，晶片的待处理对象的表面内温度差可以在通过900℃时被抑制到10℃ 以100℃/ min的速率在100℃下，即使在氧化，扩散等的热处理中以高速率高温升高，也不会在直径250mm以上的大直径半导体晶片中发生滑移。

2. 外观设计

USD411176S Wafer boat for use in a semiconductor wafer heat processing apparatus 失效
公开(公告)号：USD411176S
公开(公告)日：1999-06-22
申请号：US83421
申请日：1998-02-05
申请人： Tomohisa Shimazu
设计人： Tomohisa Shimazu

3. 发明授权

US07479619B2 Thermal processing unit 有权
标题翻译：热处理单元
公开(公告)号：US07479619B2
公开(公告)日：2009-01-20
申请号：US11487434
申请日：2006-07-17
申请人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
发明人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
IPC分类号： F27B5/14 , F27D11/00
CPC分类号： H01L21/67109 , H01L21/67098
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 设置在所述加热炉体的内壁上的加热单元; 由包含在加热炉体内的单个管构成的反应容器; 形成在反应容器的上部的气体排出管连接部; 以及设置在气体排出管连接部周围的第一温度控制单元。

4. 发明授权

US06031205A Thermal treatment apparatus with thermal protection members intercepting thermal radiation at or above a predetermined angle 失效
标题翻译：具有热保护构件的热处理装置拦截或高于预定角度的热辐射
公开(公告)号：US06031205A
公开(公告)日：2000-02-29
申请号：US913240
申请日：1997-09-10
申请人： Tomohisa Shimazu
发明人： Tomohisa Shimazu
IPC分类号： H01L21/22 , C30B31/12 , H01L21/00 , H01L21/205 , H01L21/324
CPC分类号： H01L21/67115 , C30B31/12 , H01L21/67109
摘要： In a thermal treatment apparatus that accommodates substrates to be processed (W) in multiple stages within a reaction tube (4) and subjects them to a thermal treatment, thermal protection members (19) are provided around the peripheries of the substrates (W) to be processed to intercept thermal radiation that is incident on the peripheral edge portions thereof at a predetermined angle of incidence or greater. The peripheral edge portions of substrates (W) to be processed are generally more readily affected by thermal radiation as the angle of incidence of thermal radiation thereon increases, but, since thermal radiation from the heater at a predetermined angle of incidence (.theta.) or greater is intercepted by the thus disposed thermal protection members (19), the effects on thermal radiation on the peripheral edge portions of the substrates (W) to be processed are controlled. As a result, the temperature difference within the surface between the central portion and peripheral edge portion of each substrate to be processed (W) can be sufficiently reduced, not only under normal pressure within the reaction tube (4) but also under reduced pressures, and thus the temperature can be raised or lowered rapidly, enabling an increase in throughput.
摘要翻译： PCT No.PCT / JP96 / 00503 Sec。 371日期：1997年9月10日 102（e）1997年9月10日PCT 1996年3月1日PCT公布。公开号WO96 / 28843 日期1996年9月19日在热处理设备中，在反应管（4）内容纳多个阶段的待处理基板（W）并对其进行热处理，热保护构件（19）围绕要处理的衬底（W）以以预定的入射角或更大的角度拦截入射在其周缘部分上的热辐射。待加工的基板（W）的外围边缘部分通常更容易受热辐射的影响，因为其上的热辐射入射角增加，但是由于来自加热器的预定入射角（θ）或更大的热辐射被这样设置的热保护构件（19）截取，对待处理的基板（W）的周缘部分的热辐射的影响被控制。结果，不仅在反应管（4）内的正常压力下，而且在减压下，可以充分降低待处理基板（W）的中心部分和周缘部分之间的表面内的温度差，因此可以快速升高或降低温度，从而能够提高生产量。

5. 外观设计

USD404371S Wafer boat for use in a semiconductor wafer heat processing apparatus 失效
公开(公告)号：USD404371S
公开(公告)日：1999-01-19
申请号：US83425
申请日：1998-02-05
申请人： Tomohisa Shimazu
设计人： Tomohisa Shimazu

6. 发明授权

US5709543A Vertical heat treatment apparatus 失效
标题翻译：立式热处理设备
公开(公告)号：US5709543A
公开(公告)日：1998-01-20
申请号：US706530
申请日：1996-09-04
申请人： Tomohisa Shimazu
发明人： Tomohisa Shimazu
IPC分类号： H01L21/22 , C23C16/458 , C30B25/08 , C30B25/10 , C30B25/12 , C30B31/10 , C30B31/12 , C30B31/14 , H01L21/00 , H01L21/205 , H01L21/31 , H01L21/324 , F27D3/12
CPC分类号： H01L21/67098 , C23C16/4583 , C30B25/08 , C30B25/10 , C30B25/12 , C30B31/10 , C30B31/12 , C30B31/14
摘要： The vertical heat treatment apparatus according to the present invention in which a substrate holder holding a plurality of substrates-to-be-processed at a vertical interval is mounted on the top of a cap for opening and closing the bottom opening (furnace throat) of a vertical heat treatment furnace through a heat insulation structure for a heat treatment in the uniform heat region in the furnace, the heat insulation structure comprising support rods for supporting the substrate holder, and a plurality of thin heat insulation plates having insertion holes in which the support rods are loosely inserted in, and supported by the support rods, separated from each other by spacers at a prescribed interval in the direction of height of the support rods, whereby the heat insulation structure can have a simple structure and have decreased heat capacities, and throughput can be improved.
摘要翻译：根据本发明的垂直热处理装置，其中将保持多个待垂直间隔的基板的基板保持器安装在用于打开和关闭底部开口（炉喉）的盖的顶部一个垂直热处理炉，通过隔热结构在炉内均匀加热区域进行热处理，该隔热结构包括用于支撑衬底保持架的支撑杆，以及多个具有插入孔的薄隔热板，支撑杆松散地插入并由支撑杆支撑，在支撑杆的高度方向上以规定的间隔彼此隔开，由此隔热结构可以具有简单的结构并且具有降低的热容量，并且可以提高吞吐量。

7. 发明申请

US20050028738A1 Thermal treating apparatus 有权
标题翻译：热处理设备
公开(公告)号：US20050028738A1
公开(公告)日：2005-02-10
申请号：US10494970
申请日：2002-09-27
申请人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
发明人： Takanori Saito , Toshiyuki Makiya , Hisaei Osanai , Tsuyoshi Takizawa , Tomohisa Shimazu , Kazuhide Hasebe , Hiroyuki Yamamoto , Yukimasa Saito , Kenichi Yamaga
IPC分类号： C23C16/44 , C23C16/455 , H01L21/00 , H01L21/205 , H01L21/22 , C23C16/00
CPC分类号： H01L21/67109 , H01L21/67098
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 设置在所述加热炉体的内壁上的加热单元; 由包含在加热炉体内的单个管构成的反应容器; 形成在反应容器的上部的气体排出管连接部; 以及设置在气体排出管连接部周围的第一温度控制单元。

8. 外观设计

USD423026S Quartz cover 失效
公开(公告)号：USD423026S
公开(公告)日：2000-04-18
申请号：US83714
申请日：1998-02-12
申请人： Tomohisa Shimazu
设计人： Tomohisa Shimazu

9. 发明授权

US06030457A Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US06030457A
公开(公告)日：2000-02-29
申请号：US78481
申请日：1998-05-14
申请人： Tomohisa Shimazu , Kenji Honma , Makoto Nakamura
发明人： Tomohisa Shimazu , Kenji Honma , Makoto Nakamura
IPC分类号： H01L21/22 , C23C16/44 , H01L21/205 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C23C16/4412
摘要： In a vertical substrate processing apparatus including a vertical reaction vessel having an open lower end, a lid closing the open lower end of the reaction vessel, a rotation shaft extending through the lid to rotate a wafer boat in the reaction vessel, a bore formed in a casing disposed below the lid to receive the rotation shaft is sealed hermetically by a magnetic sealing unit, the leakage of a gas emanated from magnetic fluid of the magnetic sealing unit into the reaction vessel is suppressed during a LPCVD process and, if the vertical processing apparatus is used for both a LPCVD process and an oxidation process, the corrosion of the components of a rotating mechanism by HCl gas is prevented. To achieve such functions, the bore is evacuated through an exhaust passage opening in to the bore at a position on the side of the reaction vessel with respect to the magnetic sealing unit. The deposition of reaction byproducts on rotating members can be prevented by supplying an inert gas, such as N.sub.2 gas, through a gas supply passage when the bore is evacuated. When carrying out an oxidation process, a purging gas is supplied through the gas supply passage into the bore to prevent leakage of HCl gas into the bore.
摘要翻译：在包括具有开口下端的垂直反应容器的垂直基板处理装置中，关闭反应容器的开口下端的盖子，延伸穿过盖子的旋转轴，以使晶片舟皿在反应容器中旋转，设置在盖的下方以容纳旋转轴的壳体由磁性密封单元密封，在LPCVD工艺期间抑制从磁性密封单元的磁性流体发出的气体的泄漏，并且如果垂直处理装置用于LPCVD工艺和氧化工艺，防止了通过HCl气体腐蚀旋转机构的部件。为了实现这种功能，通过相对于磁性密封单元在反应容器一侧的位置处的孔中的排气通道将孔排出。当孔被抽真空时，可以通过供应惰性气体例如N 2气体来通过气体供应通道来防止反应副产物在旋转构件上的沉积。当进行氧化处理时，将净化气体通过气体供给通道供给到孔中，以防止HCl气体泄漏到孔中。

10. 外观设计

USD409158S Wafer boat for use in a semiconductor wafer heat processing apparatus 失效
公开(公告)号：USD409158S
公开(公告)日：1999-05-04
申请号：US83420
申请日：1998-02-05
申请人： Tomohisa Shimazu
设计人： Tomohisa Shimazu

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