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1. 发明授权

US5775889A Heat treatment process for preventing slips in semiconductor wafers 失效
标题翻译：用于防止半导体晶片中的滑移的热处理工艺
公开(公告)号：US5775889A
公开(公告)日：1998-07-07
申请号：US549163
申请日：1995-10-27
申请人： Junichi Kobayashi , Eiichiro Takanabe , Harunori Ushikawa , Tomohisa Shimazu
发明人： Junichi Kobayashi , Eiichiro Takanabe , Harunori Ushikawa , Tomohisa Shimazu
IPC分类号： C23C16/46 , C30B31/12 , C30B31/14 , F27B9/12
CPC分类号： C30B31/14 , C23C16/46 , C30B31/12
摘要： A heat treatment apparatus comprising a reaction vessel located in a vertical furnace, and a ladder boat for mounting a plurality of semiconductor wafers one above another in parallel with each other. A vertical mounting pitch of mounting the wafers on the ladder boat is set at, e.g., 40 mm. When a treatment temperature is 1000.degree. C., intra-surface temperature differences of the wafers, objects to be treated, can be suppressed to 10.degree. C. at the time of passing 900.degree. C. even when 600.degree. C. is raised to 100.degree. C. at a 100.degree. C./min rate, whereby no slip occurs in large-diameter semiconductor wafers of an above 250 mm diameter even with high temperature increases at high rates in heat treatments, as of oxidation, diffusion, etc.
摘要翻译：一种热处理设备，包括位于立式炉中的反应容器和用于彼此平行地安装多个半导体晶片的梯形舟。将晶片安装在梯形船上的垂直安装间距设定为例如40mm。当处理温度为1000℃时，即使在600℃升高至900℃时，晶片的待处理对象的表面内温度差可以在通过900℃时被抑制到10℃ 以100℃/ min的速率在100℃下，即使在氧化，扩散等的热处理中以高速率高温升高，也不会在直径250mm以上的大直径半导体晶片中发生滑移。

2. 发明授权

US5688116A Heat treatment process 失效
标题翻译：热处理工艺
公开(公告)号：US5688116A
公开(公告)日：1997-11-18
申请号：US441048
申请日：1995-05-15
申请人： Junichi Kobayashi , Eiichiro Takanabe
发明人： Junichi Kobayashi , Eiichiro Takanabe
IPC分类号： H01L21/22 , C23C16/46 , C30B31/12 , C30B31/14 , F27B5/18 , H01L21/316 , H01L21/324 , F27D13/00
CPC分类号： C23C16/46 , C30B31/12 , C30B31/14 , F27B5/18
摘要： A number of semiconductor wafers are held in a ladder boat at, e.g., a 3/16 inch arrangement pitch of wafers W, and the ladder boat is loaded into a vertical heat treatment furnace. Then an interior of the heat treatment furnace is heated up to 900.degree. C. at a high temperature raising rate of, e.g., 30.degree. C./minute. Subsequently the interior is heated in steps at low temperature raising rates, e.g., at below 14.degree. C./minute up to a temperature region of, e.g., 980.degree. C. and at below 5.degree. C./minute up to a heating temperature of 1100.degree. C. These temperature raising rates are determined, based on results given by observation of presence and absence of slips in the wafers W heat-treated in various temperature raising patterns for different wafer arrangement pitches, so that the wafers can be heat-treated effectively without occurrence of slips. Widening said arrangement pitch to 3/8 inches allows higher temperature raising rates to be set.
摘要翻译：许多半导体晶片被保持在例如晶圆W的+ E，fra 3/16 + EE英寸排列间距的梯子船中，梯形船装载到立式热处理炉中。然后将热处理炉的内部以例如30℃/分钟的高温升高速度加热至900℃。随后，内部以低温升高速率逐步加热，例如低于14℃/分钟，直到例如980℃和低于5℃/分钟的温度区域直到加热温度基于通过观察不同晶片排列间距的各种升温模式对经过热处理的晶片W中存在和不存在滑移所给出的结果，确定这些升温速率，从而可以将晶片加热，有效地处理而不发生滑移。扩大布置间距至+ E，fra 3/8 + EE英寸允许设置更高的升温速率。

3. 发明授权

US5277579A Wafers transferring method in vertical type heat treatment apparatus and the vertical type heat treatment apparatus provided with a wafers transferring system 失效
标题翻译：立式热处理装置中的晶片转印方法和设置有晶片转印系统的立式热处理装置
公开(公告)号：US5277579A
公开(公告)日：1994-01-11
申请号：US847303
申请日：1992-03-06
申请人： Eiichiro Takanabe
发明人： Eiichiro Takanabe
IPC分类号： C30B35/00 , F27D19/00 , H01L21/00 , H01L21/677 , F27D3/12
CPC分类号： H01L21/67109 , C30B35/005 , F27D19/00 , H01L21/67778 , Y10S414/137 , Y10S414/139 , Y10S414/14
摘要： A wafers transferring method in the heat treatment apparatus of the vertical type comprising providing a boat loading/unloading chamber under a process tube, providing an elevator in the boat loading/unloading chamber, providing a wafer loading/unloading chamber communicated with the boat loading/unloading chamber, providing a robot in the wafer loading/unloading chamber, mounting a boat on the elevator, loading wafers one by one into the boat from the bottom to the top by the robot, while lowering the boat every pitch, heat-processing the wafers in the boat in the process tube, and unloading the wafers one by one from the boat from the top to the bottom by the robot, while lifting the boat every pitch.
摘要翻译：在垂直型热处理设备中的晶片传送方法，包括在处理管下面设置一个船装载/卸载室，在该船装载/卸载室中提供一个电梯，提供一个与该船装载/卸载室连通的晶片装载/卸载室，卸载室，在晶片加载/卸载室中提供机器人，将船安装在电梯上，由机器人从底部到顶部一个一个地将晶片一个一个地装载到船中，同时每个桨距降低船的热处理在处理管中的船上的晶片，并且由机器人从顶部到底部从船从船上逐个卸载晶片，同时每个桨距提升船。

4. 发明授权

US5030056A Substrate transfer device 失效
标题翻译：基板转印装置
公开(公告)号：US5030056A
公开(公告)日：1991-07-09
申请号：US555645
申请日：1990-07-23
申请人： Hirofumi Kitayama , Mitsuo Kato , Eiichiro Takanabe , Masaru Kobayashi
发明人： Hirofumi Kitayama , Mitsuo Kato , Eiichiro Takanabe , Masaru Kobayashi
IPC分类号： H01L21/677 , B65G49/07 , H01L21/687
CPC分类号： H01L21/68707 , Y10S414/135
摘要： A substrate transfer device containing an arm support member for supporting plural substrate support arms at one ends thereof, said arms having substrate housing areas at the other ends thereof, a structure arranged on a base to freely move in the longitudinal direction of the substrate support arms while holding the arm support member, another arm support member for holding a substrate support arm at the other side of the first arm support member, a structure arranged on the base to freely move in the longitudinal direction of the one substrate support arm while holding the arm support member for one substrate, a structure for moving the base up and down, and a structure for moving the base in a direction perpendicular to the substrate support arms on a plane parallel to the plane in which the substrate support arms are included.
摘要翻译：一种基板传送装置，包括用于在其一端处支撑多个基板支撑臂的臂支撑构件，所述臂在其另一端处具有基板容纳区域，布置在基部上以在基板支撑臂的纵向方向上自由移动的结构同时保持臂支撑构件，另一个臂支撑构件用于将基板支撑臂保持在第一臂支撑构件的另一侧，布置在基座上以在保持第一臂支撑构件的一个基板支撑臂的纵向方向上自由移动的结构用于一个基板的支撑构件，用于上下移动基座的结构，以及用于在垂直于基板支撑臂的方向上平行于包括基板支撑臂的平面的平面移动基座的结构。

5. 发明授权

US5016567A Apparatus for treatment using gas 失效
标题翻译：使用气体处理的设备
公开(公告)号：US5016567A
公开(公告)日：1991-05-21
申请号：US394929
申请日：1989-08-17
申请人： Katsuhiko Iwabuchi , Osamu Yokokawa , Eiichiro Takanabe
发明人： Katsuhiko Iwabuchi , Osamu Yokokawa , Eiichiro Takanabe
IPC分类号： C23C16/44
CPC分类号： C23C16/4409 , C23C16/44 , C23C16/4401 , Y10S156/912
摘要： A heat treatment apparatus used in the manufacturing of semiconductor devices and the like, for treating with a reaction gas substrates placed in a reaction tube of the apparatus. A support table is provided within the reaction tube, for supporting substrates during a treatment process, and is rotated during each treatment by a motor, via a shaft penetrating the reaction tube. That portion of the reaction tube which is penetrated by the shaft is provided with a journal bearing and a magnetic fluid seal member. The seal member is surrounded by an enclosing space which substantially separates the seal member from the reaction space within the reaction tube, the enclosing space and the reaction space communicating with each other via a narrow passage. During a heat treatment, a shield gas is supplied into the enclosing space, the pressure within the enclosing space being maintained at a higher level than that within the reaction space. As a result, the reaction gas and a gas produced during heat treatment cannot come into contact with the seal member, and thus cannot adversely affect the seal member.
摘要翻译：一种用于制造半导体器件等的热处理装置，用于处理放置在该装置的反应管中的反应气体基板。在反应管内提供支撑台，用于在处理过程中支撑基板，并且通过电动机通过穿过反应管的轴在每次处理期间旋转支撑台。由轴穿透的反应管的该部分设置有轴颈轴承和磁性流体密封构件。密封构件被包围的空间包围，该封闭空间基本上将密封构件与反应管内的反应空间分离，封闭空间和反应空间经由狭窄的通道相互连通。在热处理期间，将保护气体供应到封闭空间中，封闭空间内的压力保持在比反应空间内的压力高的水平。结果，反应气体和热处理时产生的气体不能与密封构件接触，因此不会对密封构件产生不利影响。

6. 发明授权

US5388944A Vertical heat-treating apparatus and heat-treating process by using the vertical heat-treating apparatus 失效
标题翻译：立式热处理装置及使用立式热处理装置的热处理工序
公开(公告)号：US5388944A
公开(公告)日：1995-02-14
申请号：US13366
申请日：1993-02-04
申请人： Eiichiro Takanabe , Takeo Suzuki , Tadataka Noguchi
发明人： Eiichiro Takanabe , Takeo Suzuki , Tadataka Noguchi
IPC分类号： H01L21/205 , B65G49/07 , C23C16/44 , C23C16/54 , H01L21/00 , H01L21/22 , H01L21/31 , H01L21/324 , H01L21/677
CPC分类号： H01L21/67757 , C23C16/4401 , C23C16/54 , H01L21/67017 , H01L21/67201 , Y10S414/139
摘要： A wafer loading and unloading chamber is provided at the bottom of a reaction tube of a heat treatment section, a robot chamber and cassette chamber are coupled via gate valves to the wafer loading and unloading chamber, the robot chamber comprises a first load lock chamber while the wafer loading and unloading chamber comprises a second load lock chamber. These first and second load lock chambers are mutually connected by a pressure balancing gas conduit via pressure balancing valves. During heat treatment of the target objects, the wafer loading and unloading chamber and robot chamber are first set to inert gas atmospheres, then the pressure balancing gas conduit valves are opened to balance the pressures of the robot and cassette chambers. Gate valves between these chambers are then opened, and the cassette is conveyed via the robot chamber to a wafer boat in the wafer loading and unloading chamber. By this process gas flow between the two chambers when the gate valves are opened is suppressed to allow minimizing the production of particles.
摘要翻译：在热处理部分的反应管的底部提供晶片装载和卸载室，机器人腔室和盒室通过闸阀连接到晶片装载和卸载室，机器人腔室包括第一加载锁定室晶片装卸室包括第二负载锁定室。这些第一和第二负载锁定室通过压力平衡阀通过压力平衡气体导管相互连接。在目标物体的热处理过程中，首先将晶片装卸室和机械手室设置为惰性气体环境，然后打开压力平衡气体管道阀门，以平衡机器人和盒室的压力。然后打开这些室之间的闸阀，并且将盒经由机器人腔室输送到晶片装载和卸载室中的晶片舟皿。通过该处理，当闸阀打开时两个室之间的气体流动被抑制以允许使颗粒的产生最小化。

7. 发明授权

US06402848B1 Single-substrate-treating apparatus for semiconductor processing system 失效
标题翻译：半导体处理系统单基板处理装置
公开(公告)号：US06402848B1
公开(公告)日：2002-06-11
申请号：US09549343
申请日：2000-04-13
申请人： Takahiro Horiguchi , Wataru Okase , Eiichiro Takanabe
发明人： Takahiro Horiguchi , Wataru Okase , Eiichiro Takanabe
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/405 , C23C16/4412 , C23C16/4558 , H01L21/67017
摘要： In an annealing apparatus for processing semiconductor wafers one by one, a hermetic process chamber has a work table having an upper surface on which a wafer is placed. A shower head is disposed to supply a process gas into the process chamber from a position opposing the upper surface of the work table. An exhaust chamber is connected to the bottom portion of the process chamber through an inlet opening below the work table. The inlet opening has a planar contour smaller than that of the work table. The planar contours of the work table and the opening are arranged almost concentrically with each other. An exhaust mechanism is connected to the exhaust chamber, so the process chamber is exhausted through the exhaust chamber.
摘要翻译：在一个处理半导体晶片的退火装置中，密封处理室具有工作台，工作台具有放置晶片的上表面。淋浴头被设置成从与工作台的上表面相对的位置向处理室提供处理气体。排气室通过工作台下方的入口连接到处理室的底部。入口开口具有比工作台小的平面轮廓。工作台和开口的平面轮廓几乎同心地布置。排气机构连接到排气室，因此处理室通过排气室排出。

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